CN102610634B - 半导体装置和半导体装置的制造方法 - Google Patents
半导体装置和半导体装置的制造方法 Download PDFInfo
- Publication number
- CN102610634B CN102610634B CN201210018534.8A CN201210018534A CN102610634B CN 102610634 B CN102610634 B CN 102610634B CN 201210018534 A CN201210018534 A CN 201210018534A CN 102610634 B CN102610634 B CN 102610634B
- Authority
- CN
- China
- Prior art keywords
- carrier concentration
- collector layer
- semiconductor device
- peak position
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
- H10D12/441—Vertical IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
- H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/60—Impurity distributions or concentrations
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011-012325 | 2011-01-24 | ||
| JP2011012325A JP5621621B2 (ja) | 2011-01-24 | 2011-01-24 | 半導体装置と半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102610634A CN102610634A (zh) | 2012-07-25 |
| CN102610634B true CN102610634B (zh) | 2015-07-15 |
Family
ID=46510899
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210018534.8A Active CN102610634B (zh) | 2011-01-24 | 2012-01-20 | 半导体装置和半导体装置的制造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8614448B2 (enExample) |
| JP (1) | JP5621621B2 (enExample) |
| KR (1) | KR101318219B1 (enExample) |
| CN (1) | CN102610634B (enExample) |
| DE (1) | DE102011088624B4 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9397206B2 (en) * | 2011-11-09 | 2016-07-19 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device and method for manufacturing the same |
| JP6265594B2 (ja) * | 2012-12-21 | 2018-01-24 | ラピスセミコンダクタ株式会社 | 半導体装置の製造方法、及び半導体装置 |
| JP6219044B2 (ja) | 2013-03-22 | 2017-10-25 | 株式会社東芝 | 半導体装置およびその製造方法 |
| JP6844130B2 (ja) * | 2015-08-18 | 2021-03-17 | 富士電機株式会社 | 半導体装置及びその製造方法 |
| JP7119350B2 (ja) * | 2017-11-22 | 2022-08-17 | 富士電機株式会社 | 縦型ＧａＮ系半導体装置の製造方法および縦型ＧａＮ系半導体装置 |
| JP7010184B2 (ja) * | 2018-09-13 | 2022-01-26 | 株式会社デンソー | 半導体装置 |
| JP7249586B2 (ja) * | 2019-03-18 | 2023-03-31 | 国立大学法人東海国立大学機構 | 窒化物半導体装置の製造方法 |
| JP7687514B2 (ja) * | 2022-02-17 | 2025-06-03 | 富士電機株式会社 | 半導体装置およびその製造方法 |
Family Cites Families (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4053924A (en) * | 1975-02-07 | 1977-10-11 | California Linear Circuits, Inc. | Ion-implanted semiconductor abrupt junction |
| US4111720A (en) * | 1977-03-31 | 1978-09-05 | International Business Machines Corporation | Method for forming a non-epitaxial bipolar integrated circuit |
| US4782379A (en) * | 1981-11-23 | 1988-11-01 | General Electric Company | Semiconductor device having rapid removal of majority carriers from an active base region thereof at device turn-off and method of fabricating this device |
| JP2663679B2 (ja) | 1990-04-20 | 1997-10-15 | 富士電機株式会社 | 伝導度変調型ｍｏｓｆｅｔ |
| US5270230A (en) | 1990-04-20 | 1993-12-14 | Fuji Electric Co., Ltd. | Method for making a conductivity modulation MOSFET |
| US5264378A (en) | 1990-04-20 | 1993-11-23 | Fuji Electric Co., Ltd. | Method for making a conductivity modulation MOSFET |
| JPH08288500A (ja) * | 1995-04-20 | 1996-11-01 | Hitachi Ltd | 炭化珪素半導体素子とその製造法及び用途 |
| JP3727827B2 (ja) * | 2000-05-15 | 2005-12-21 | 株式会社東芝 | 半導体装置 |
| JP5025071B2 (ja) | 2001-02-01 | 2012-09-12 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| DE10104776A1 (de) | 2001-02-02 | 2002-08-22 | Infineon Technologies Ag | Bipolartransistor und Verfahren zu dessen Herstellung |
| JP4023773B2 (ja) | 2001-03-30 | 2007-12-19 | 株式会社東芝 | 高耐圧半導体装置 |
| JP5160001B2 (ja) | 2001-04-02 | 2013-03-13 | 富士電機株式会社 | 半導体装置の製造方法 |
| JP4967205B2 (ja) * | 2001-08-09 | 2012-07-04 | 富士電機株式会社 | 半導体装置の製造方法 |
| JP2003249653A (ja) * | 2002-02-26 | 2003-09-05 | Fuji Electric Co Ltd | 半導体装置 |
| JP3960174B2 (ja) * | 2002-09-09 | 2007-08-15 | 富士電機デバイステクノロジー株式会社 | 半導体装置の製造方法 |
| JP2004311481A (ja) | 2003-04-02 | 2004-11-04 | Toshiba Corp | 半導体装置 |
| JP4676708B2 (ja) * | 2004-03-09 | 2011-04-27 | 新電元工業株式会社 | 半導体装置の製造方法 |
| JP2005354031A (ja) * | 2004-05-13 | 2005-12-22 | Mitsubishi Electric Corp | 半導体装置 |
| JP4415767B2 (ja) | 2004-06-14 | 2010-02-17 | サンケン電気株式会社 | 絶縁ゲート型半導体素子、及びその製造方法 |
| JP2006210606A (ja) | 2005-01-27 | 2006-08-10 | Mitsubishi Electric Corp | 半導体装置および半導体装置の製造方法 |
| JP2006332199A (ja) * | 2005-05-24 | 2006-12-07 | Shindengen Electric Mfg Co Ltd | ＳｉＣ半導体装置 |
| JP2007123469A (ja) * | 2005-10-27 | 2007-05-17 | Toyota Central Res & Dev Lab Inc | 半導体装置とその製造方法 |
| JP2007135252A (ja) * | 2005-11-08 | 2007-05-31 | Hitachi Ltd | 電力変換装置 |
| JP4867518B2 (ja) * | 2006-08-03 | 2012-02-01 | 株式会社デンソー | 半導体装置の製造方法 |
| JP4979309B2 (ja) * | 2006-08-29 | 2012-07-18 | 三菱電機株式会社 | 電力用半導体装置 |
| JP5320679B2 (ja) | 2007-02-28 | 2013-10-23 | 富士電機株式会社 | 半導体装置およびその製造方法 |
| JP5693851B2 (ja) | 2008-02-06 | 2015-04-01 | ローム株式会社 | 半導体装置 |
| JP2010056134A (ja) | 2008-08-26 | 2010-03-11 | Mitsubishi Electric Corp | 半導体装置 |
| JP2010206111A (ja) | 2009-03-05 | 2010-09-16 | Toshiba Corp | 半導体装置 |
| JP2011012325A (ja) | 2009-07-05 | 2011-01-20 | Bisansei Denkaisui Kenkyusho:Kk | 電解槽 |
-
2011
- 2011-01-24 JP JP2011012325A patent/JP5621621B2/ja active Active
- 2011-09-20 US US13/237,577 patent/US8614448B2/en active Active
- 2011-12-14 DE DE102011088624.9A patent/DE102011088624B4/de active Active
-
2012
- 2012-01-17 KR KR1020120005054A patent/KR101318219B1/ko active Active
- 2012-01-20 CN CN201210018534.8A patent/CN102610634B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| KR101318219B1 (ko) | 2013-10-15 |
| JP2012156207A (ja) | 2012-08-16 |
| KR20120085663A (ko) | 2012-08-01 |
| DE102011088624A1 (de) | 2012-07-26 |
| CN102610634A (zh) | 2012-07-25 |
| JP5621621B2 (ja) | 2014-11-12 |
| US8614448B2 (en) | 2013-12-24 |
| DE102011088624B4 (de) | 2016-06-02 |
| US20120187416A1 (en) | 2012-07-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102610634B (zh) | 半导体装置和半导体装置的制造方法 | |
| JP3764343B2 (ja) | 半導体装置の製造方法 | |
| US7645659B2 (en) | Power semiconductor device using silicon substrate as field stop layer and method of manufacturing the same | |
| US20160307993A1 (en) | Semiconductor device and method of manufacturing semiconductor device | |
| CN102347355A (zh) | 最小化场阑igbt的缓冲区及发射极电荷差异的方法 | |
| TWI690081B (zh) | 引入外延層場闌區的反向傳導igbt及其製備方法 | |
| WO2010038547A1 (ja) | 炭化珪素半導体装置 | |
| JP2013247248A (ja) | 半導体装置の製造方法 | |
| JP7072513B2 (ja) | ワイドバンドギャップ半導体パワーデバイスのｉｎ－ｓｉｔｕドープ半導体ゲート電極のためのシステムおよび方法 | |
| JP2008227414A (ja) | 半導体装置およびその製造方法 | |
| US9236433B2 (en) | Semiconductor devices in SiC using vias through N-type substrate for backside contact to P-type layer | |
| KR102070959B1 (ko) | 파워 소자 및 그 제조방법 | |
| US7534666B2 (en) | High voltage non punch through IGBT for switch mode power supplies | |
| KR20020053713A (ko) | 반도체장치 | |
| US9048210B2 (en) | Transistors and methods of manufacturing the same | |
| CN101770949B (zh) | 用于制造功率半导体器件的方法 | |
| JP6125568B2 (ja) | 半導体用の最適化層 | |
| JP4372082B2 (ja) | 半導体装置とその製造方法 | |
| JP4676708B2 (ja) | 半導体装置の製造方法 | |
| CN114447097B (zh) | 半导体装置 | |
| JP4349798B2 (ja) | 半導体装置の製造方法 | |
| KR101571704B1 (ko) | 탄화규소 전계효과 트랜지스터의 제조방법 | |
| JP2007123469A (ja) | 半導体装置とその製造方法 | |
| CN108321191A (zh) | 功率半导体器件及其制造方法 | |
| JP2023130240A (ja) | 炭化珪素半導体装置および炭化珪素半導体基板 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |