KR101293877B1 - 고주파 전원 장치 - Google Patents

고주파 전원 장치 Download PDF

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Publication number
KR101293877B1
KR101293877B1 KR1020060095688A KR20060095688A KR101293877B1 KR 101293877 B1 KR101293877 B1 KR 101293877B1 KR 1020060095688 A KR1020060095688 A KR 1020060095688A KR 20060095688 A KR20060095688 A KR 20060095688A KR 101293877 B1 KR101293877 B1 KR 101293877B1
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KR
South Korea
Prior art keywords
high frequency
signal
frequency
reflected wave
output
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Expired - Fee Related
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KR1020060095688A
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English (en)
Korean (ko)
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KR20070037394A (ko
Inventor
사토루 하마이시
요시키 후쿠모토
가즈타카 세이
Original Assignee
가부시키가이샤 다이헨
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Control Of Amplification And Gain Control (AREA)
KR1020060095688A 2005-09-30 2006-09-29 고주파 전원 장치 Expired - Fee Related KR101293877B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005289437A JP4879548B2 (ja) 2005-09-30 2005-09-30 高周波電源装置
JPJP-P-2005-00289437 2005-09-30

Publications (2)

Publication Number Publication Date
KR20070037394A KR20070037394A (ko) 2007-04-04
KR101293877B1 true KR101293877B1 (ko) 2013-08-07

Family

ID=37942151

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020060095688A Expired - Fee Related KR101293877B1 (ko) 2005-09-30 2006-09-29 고주파 전원 장치

Country Status (3)

Country Link
US (1) US7615983B2 (enrdf_load_stackoverflow)
JP (1) JP4879548B2 (enrdf_load_stackoverflow)
KR (1) KR101293877B1 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018128235A1 (ko) * 2017-01-04 2018-07-12 주식회사 메디플 플라즈마 생성을 위한 전력 공급 장치

Families Citing this family (23)

* Cited by examiner, † Cited by third party
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US7517437B2 (en) * 2006-03-29 2009-04-14 Applied Materials, Inc. RF powered target for increasing deposition uniformity in sputtering systems
JP5090986B2 (ja) * 2008-03-26 2012-12-05 株式会社ダイヘン 高周波電源装置
JP4932787B2 (ja) * 2008-05-30 2012-05-16 株式会社ダイヘン 高周波電源装置
JP5283475B2 (ja) * 2008-10-21 2013-09-04 Ｓｐｐテクノロジーズ株式会社 プラズマ制御用電源装置
JP5398058B2 (ja) * 2008-10-31 2014-01-29 株式会社ダイヘン 高周波電源装置
JP5595134B2 (ja) * 2010-06-11 2014-09-24 富士フイルム株式会社 ドライエッチング装置及びドライエッチング方法
JP5729693B2 (ja) 2011-03-30 2015-06-03 株式会社ダイヘン 高周波電源装置
JP2013223380A (ja) * 2012-04-18 2013-10-28 Sony Corp 送電装置、非接触電力伝送システムおよび信号生成方法
JP6219057B2 (ja) * 2013-04-02 2017-10-25 株式会社ダイヘン 高周波電源
JP6342235B2 (ja) * 2014-03-19 2018-06-13 株式会社ダイヘン 高周波電源
US9947514B2 (en) 2015-09-01 2018-04-17 Mks Instruments, Inc. Plasma RF bias cancellation system
JP6761173B2 (ja) * 2016-08-15 2020-09-23 富士通株式会社 無線解析装置、無線解析方法、及びプログラム
CN110504149B (zh) * 2018-05-17 2022-04-22 北京北方华创微电子装备有限公司 射频电源的脉冲调制系统及方法
JP6842443B2 (ja) * 2018-06-22 2021-03-17 東京エレクトロン株式会社 プラズマ処理装置及びプラズマを生成する方法
JP7437142B2 (ja) * 2019-11-25 2024-02-22 株式会社ダイヘン 高周波電源システム
CN113394067A (zh) * 2020-03-13 2021-09-14 Asm Ip私人控股有限公司 基板处理设备
JP7383533B2 (ja) 2020-03-16 2023-11-20 株式会社京三製作所 高周波電源装置及びその出力制御方法
JP7544594B2 (ja) * 2020-12-25 2024-09-03 株式会社ダイヘン 高周波電源システム
KR20250036950A (ko) * 2021-01-29 2025-03-14 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 소스 고주파 전력의 소스 주파수를 제어하는 방법
JP2023098299A (ja) * 2021-12-28 2023-07-10 株式会社ダイヘン 高周波電源装置
JP2023098297A (ja) 2021-12-28 2023-07-10 株式会社ダイヘン 高周波電源装置
JP2024095373A (ja) * 2022-12-28 2024-07-10 株式会社ダイヘン 高周波電力供給システム
JP2024094846A (ja) 2022-12-28 2024-07-10 株式会社ダイヘン 高周波電源装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020158622A1 (en) * 1998-08-13 2002-10-31 Rayne Mark W. Error correction in amplifiers
WO2005052533A1 (ja) * 2003-11-27 2005-06-09 Kyocera Corporation 圧力センサ装置
WO2005057993A1 (ja) * 2003-11-27 2005-06-23 Daihen Corporation 高周波電力供給システム

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JPH08236294A (ja) * 1995-02-28 1996-09-13 Jeol Ltd 高周波プラズマ応用装置
JP3220383B2 (ja) * 1996-07-23 2001-10-22 東京エレクトロン株式会社 プラズマ処理装置及びその方法
DE69836917D1 (de) * 1997-09-17 2007-03-08 Tokyo Electron Ltd System und verfahren zur anpassung von elektrischen impedanzen
JP2000144416A (ja) * 1998-11-06 2000-05-26 Sanyo Shinku Kogyo Kk 電力印加装置および電力印加方法
JP2000150478A (ja) * 1998-11-12 2000-05-30 Matsushita Electronics Industry Corp プラズマ発生方法及びプラズマ発生装置
JP2002026137A (ja) * 2000-07-05 2002-01-25 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP2002353809A (ja) * 2001-05-28 2002-12-06 Mitsubishi Electric Corp クロック発生回路
US6489731B1 (en) * 2001-07-27 2002-12-03 Koninklijke Philips Electronics N.V. Power supply and/or ballast system controlled by desired load power spectrum
JP2003143861A (ja) 2001-10-31 2003-05-16 Daihen Corp 高周波電源装置
GB2389252B (en) * 2002-05-31 2006-09-27 Zarlink Semiconductor Ltd A frequency modulation system & method
JP4111845B2 (ja) * 2003-02-28 2008-07-02 三菱電機株式会社 Ｄ級増幅器
WO2004089222A1 (ja) * 2003-04-03 2004-10-21 Matsushita Electric Industrial Co. Ltd. 超音波診断装置および超音波診断装置の制御方法
JP4799947B2 (ja) * 2005-02-25 2011-10-26 株式会社ダイヘン 高周波電源装置および高周波電源の制御方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020158622A1 (en) * 1998-08-13 2002-10-31 Rayne Mark W. Error correction in amplifiers
WO2005052533A1 (ja) * 2003-11-27 2005-06-09 Kyocera Corporation 圧力センサ装置
WO2005057993A1 (ja) * 2003-11-27 2005-06-23 Daihen Corporation 高周波電力供給システム

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018128235A1 (ko) * 2017-01-04 2018-07-12 주식회사 메디플 플라즈마 생성을 위한 전력 공급 장치
KR20180080631A (ko) * 2017-01-04 2018-07-12 주식회사 메디플 플라즈마 생성을 위한 전력 공급 장치
KR101927439B1 (ko) 2017-01-04 2018-12-10 주식회사 메디플 플라즈마 생성을 위한 전력 공급 장치

Also Published As

Publication number Publication date
US20070076344A1 (en) 2007-04-05
KR20070037394A (ko) 2007-04-04
US7615983B2 (en) 2009-11-10
JP2007103102A (ja) 2007-04-19
JP4879548B2 (ja) 2012-02-22

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