KR101240720B1 - 반도체 기억 장치의 제조 방법 - Google Patents

반도체 기억 장치의 제조 방법 Download PDF

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Publication number
KR101240720B1
KR101240720B1 KR1020060026177A KR20060026177A KR101240720B1 KR 101240720 B1 KR101240720 B1 KR 101240720B1 KR 1020060026177 A KR1020060026177 A KR 1020060026177A KR 20060026177 A KR20060026177 A KR 20060026177A KR 101240720 B1 KR101240720 B1 KR 101240720B1
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South Korea
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region
memory cell
conductive film
forming
insulating film
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KR1020060026177A
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English (en)
Korean (ko)
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KR20060103153A (ko
Inventor
모또이 아시다
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르네사스 일렉트로닉스 가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/18—Peripheral circuit regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/694—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs

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  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Thin Film Transistor (AREA)
KR1020060026177A 2005-03-23 2006-03-22 반도체 기억 장치의 제조 방법 Active KR101240720B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2005-00083981 2005-03-23
JP2005083981 2005-03-23
JP2006042255A JP5025140B2 (ja) 2005-03-23 2006-02-20 半導体記憶装置の製造方法
JPJP-P-2006-00042255 2006-02-20

Related Child Applications (1)

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KR1020120090844A Division KR101210198B1 (ko) 2005-03-23 2012-08-20 반도체 기억 장치

Publications (2)

Publication Number Publication Date
KR20060103153A KR20060103153A (ko) 2006-09-28
KR101240720B1 true KR101240720B1 (ko) 2013-03-07

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KR1020060026177A Active KR101240720B1 (ko) 2005-03-23 2006-03-22 반도체 기억 장치의 제조 방법
KR1020120090844A Expired - Fee Related KR101210198B1 (ko) 2005-03-23 2012-08-20 반도체 기억 장치

Family Applications After (1)

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KR1020120090844A Expired - Fee Related KR101210198B1 (ko) 2005-03-23 2012-08-20 반도체 기억 장치

Country Status (4)

Country Link
US (2) US7582550B2 (enExample)
JP (1) JP5025140B2 (enExample)
KR (2) KR101240720B1 (enExample)
TW (1) TWI382528B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5190189B2 (ja) * 2006-08-09 2013-04-24 パナソニック株式会社 半導体装置及びその製造方法
WO2008059768A1 (en) * 2006-11-14 2008-05-22 Nec Corporation Semiconductor device
US8173532B2 (en) 2007-07-30 2012-05-08 International Business Machines Corporation Semiconductor transistors having reduced distances between gate electrode regions
JP2009124106A (ja) * 2007-10-26 2009-06-04 Renesas Technology Corp 半導体装置およびその製造方法
JP2009130136A (ja) * 2007-11-22 2009-06-11 Renesas Technology Corp 不揮発性半導体記憶装置およびその製造方法
JP2010021465A (ja) * 2008-07-14 2010-01-28 Nec Electronics Corp 不揮発性半導体記憶装置
KR100936627B1 (ko) * 2008-12-24 2010-01-13 주식회사 동부하이텍 플래시 메모리 소자 및 이의 제조 방법
KR101510481B1 (ko) * 2008-12-31 2015-04-10 주식회사 동부하이텍 플래시 메모리 소자 및 그 제조 방법
WO2010082328A1 (ja) * 2009-01-15 2010-07-22 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US8692310B2 (en) 2009-02-09 2014-04-08 Spansion Llc Gate fringing effect based channel formation for semiconductor device
US8951864B2 (en) * 2012-02-13 2015-02-10 Taiwan Semiconductor Manufacturing Company, Ltd. Split-gate device and method of fabricating the same
US8822289B2 (en) * 2012-12-14 2014-09-02 Spansion Llc High voltage gate formation
JP5650303B2 (ja) * 2013-10-29 2015-01-07 ルネサスエレクトロニクス株式会社 半導体記憶装置の製造方法
US9437603B2 (en) * 2014-10-10 2016-09-06 Taiwan Semiconductor Manufacturing Co., Ltd. Wing-type projection between neighboring access transistors in memory devices
KR102618492B1 (ko) * 2018-05-18 2023-12-28 삼성전자주식회사 3차원 반도체 소자

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970013338A (ko) * 1995-08-21 1997-03-29 김광호 불휘발성 메모리 장치 및 그 제조 방법
KR20010036727A (ko) * 1999-10-11 2001-05-07 김영환 비휘발성 메모리 소자 및 그의 제조방법
JP2002231829A (ja) * 2001-01-22 2002-08-16 Halo Lsi Design & Device Technol Inc 不揮発性半導体メモリおよびその製造方法
JP2003309193A (ja) * 2002-04-18 2003-10-31 Hitachi Ltd 半導体集積回路装置及び半導体集積回路装置の製造方法
JP2004186452A (ja) * 2002-12-04 2004-07-02 Renesas Technology Corp 不揮発性半導体記憶装置およびその製造方法
JP2004247633A (ja) * 2003-02-17 2004-09-02 Renesas Technology Corp 半導体装置

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US5285093A (en) * 1992-10-05 1994-02-08 Motorola, Inc. Semiconductor memory cell having a trench structure
JP3621303B2 (ja) * 1999-08-30 2005-02-16 Ｎｅｃエレクトロニクス株式会社 半導体装置及びその製造方法
JP3496932B2 (ja) * 2001-01-30 2004-02-16 セイコーエプソン株式会社 不揮発性半導体記憶装置を含む半導体集積回路装置
US7053459B2 (en) * 2001-03-12 2006-05-30 Renesas Technology Corp. Semiconductor integrated circuit device and process for producing the same
JP4191975B2 (ja) * 2001-11-01 2008-12-03 イノテック株式会社 トランジスタとそれを用いた半導体メモリ、およびトランジスタの製造方法
US6894341B2 (en) * 2001-12-25 2005-05-17 Kabushiki Kaisha Toshiba Semiconductor device and manufacturing method
JP2003330388A (ja) * 2002-05-15 2003-11-19 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP4134637B2 (ja) * 2002-08-27 2008-08-20 株式会社日立製作所 半導体装置
KR100521371B1 (ko) 2003-01-22 2005-10-12 삼성전자주식회사 소노스형 비휘발성 메모리 및 그 제조 방법
JP2004241473A (ja) * 2003-02-04 2004-08-26 Renesas Technology Corp 半導体記憶装置
JP2004335057A (ja) * 2003-05-12 2004-11-25 Sharp Corp 誤作動防止装置付き半導体記憶装置とそれを用いた携帯電子機器
US7214585B2 (en) * 2003-05-16 2007-05-08 Promos Technologies Inc. Methods of fabricating integrated circuits with openings that allow electrical contact to conductive features having self-aligned edges
JP2004356562A (ja) 2003-05-30 2004-12-16 Renesas Technology Corp 半導体装置の製造方法および半導体装置
JP2005191489A (ja) * 2003-12-26 2005-07-14 Sharp Corp 半導体記憶装置およびその製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970013338A (ko) * 1995-08-21 1997-03-29 김광호 불휘발성 메모리 장치 및 그 제조 방법
KR20010036727A (ko) * 1999-10-11 2001-05-07 김영환 비휘발성 메모리 소자 및 그의 제조방법
JP2002231829A (ja) * 2001-01-22 2002-08-16 Halo Lsi Design & Device Technol Inc 不揮発性半導体メモリおよびその製造方法
JP2003309193A (ja) * 2002-04-18 2003-10-31 Hitachi Ltd 半導体集積回路装置及び半導体集積回路装置の製造方法
JP2004186452A (ja) * 2002-12-04 2004-07-02 Renesas Technology Corp 不揮発性半導体記憶装置およびその製造方法
JP2004247633A (ja) * 2003-02-17 2004-09-02 Renesas Technology Corp 半導体装置

Also Published As

Publication number Publication date
TWI382528B (zh) 2013-01-11
JP5025140B2 (ja) 2012-09-12
US20070221960A1 (en) 2007-09-27
US20090294827A1 (en) 2009-12-03
KR20120097364A (ko) 2012-09-03
US7582550B2 (en) 2009-09-01
KR101210198B1 (ko) 2012-12-07
US8174062B2 (en) 2012-05-08
TW200717777A (en) 2007-05-01
KR20060103153A (ko) 2006-09-28
JP2006303448A (ja) 2006-11-02

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