KR101203220B1 - 신호 전도를 허용하면서 인터커넥트 패드에 대한 구조적서포트를 제공하기 위한 방법 및 장치 - Google Patents

신호 전도를 허용하면서 인터커넥트 패드에 대한 구조적서포트를 제공하기 위한 방법 및 장치 Download PDF

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KR101203220B1
KR101203220B1 KR1020077015769A KR20077015769A KR101203220B1 KR 101203220 B1 KR101203220 B1 KR 101203220B1 KR 1020077015769 A KR1020077015769 A KR 1020077015769A KR 20077015769 A KR20077015769 A KR 20077015769A KR 101203220 B1 KR101203220 B1 KR 101203220B1
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South Korea
Prior art keywords
metal
interconnect
layer
metal layer
interconnect pad
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KR20070099599A (ko
Inventor
케빈 제이. 헤스
수잔 에이치. 다우니
제임스 더블유. 밀러
쳉 초이 용
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프리스케일 세미컨덕터, 인크.
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4405—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4421—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Wire Bonding (AREA)
KR1020077015769A 2005-01-11 2005-11-30 신호 전도를 허용하면서 인터커넥트 패드에 대한 구조적서포트를 제공하기 위한 방법 및 장치 Expired - Lifetime KR101203220B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/033,008 2005-01-11
US11/033,008 US7241636B2 (en) 2005-01-11 2005-01-11 Method and apparatus for providing structural support for interconnect pad while allowing signal conductance
PCT/US2005/043207 WO2006076082A2 (en) 2005-01-11 2005-11-30 Method and apparatus for providing structural support for interconnect pad while allowing signal conductance

Publications (2)

Publication Number Publication Date
KR20070099599A KR20070099599A (ko) 2007-10-09
KR101203220B1 true KR101203220B1 (ko) 2012-11-20

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KR1020077015769A Expired - Lifetime KR101203220B1 (ko) 2005-01-11 2005-11-30 신호 전도를 허용하면서 인터커넥트 패드에 대한 구조적서포트를 제공하기 위한 방법 및 장치

Country Status (6)

Country Link
US (2) US7241636B2 (https=)
JP (1) JP2008527710A (https=)
KR (1) KR101203220B1 (https=)
CN (2) CN101556945B (https=)
TW (1) TWI389226B (https=)
WO (1) WO2006076082A2 (https=)

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US7589945B2 (en) * 2006-08-31 2009-09-15 Freescale Semiconductor, Inc. Distributed electrostatic discharge protection circuit with varying clamp size
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US20090020856A1 (en) * 2007-07-17 2009-01-22 International Business Machines Corporation Semiconductor device structures and methods for shielding a bond pad from electrical noise
US7777998B2 (en) 2007-09-10 2010-08-17 Freescale Semiconductor, Inc. Electrostatic discharge circuit and method therefor
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US7739636B2 (en) * 2007-10-23 2010-06-15 International Business Machines Corporation Design structure incorporating semiconductor device structures that shield a bond pad from electrical noise
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JP5291917B2 (ja) 2007-11-09 2013-09-18 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
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US8258629B2 (en) * 2008-04-02 2012-09-04 Taiwan Semiconductor Manufacturing Company, Ltd. Curing low-k dielectrics for improving mechanical strength
US8274146B2 (en) * 2008-05-30 2012-09-25 Freescale Semiconductor, Inc. High frequency interconnect pad structure
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CN103579192A (zh) * 2012-07-26 2014-02-12 中芯国际集成电路制造(上海)有限公司 一种新型的通孔链测试结构及其测试方法
JP5772926B2 (ja) * 2013-01-07 2015-09-02 株式会社デンソー 半導体装置
US9105485B2 (en) * 2013-03-08 2015-08-11 Taiwan Semiconductor Manufacturing Company, Ltd. Bonding structures and methods of forming the same
US9659882B2 (en) * 2015-01-20 2017-05-23 Sandisk Technologies Llc System, method and apparatus to relieve stresses in a semiconductor die caused by uneven internal metallization layers
US9564404B2 (en) * 2015-01-20 2017-02-07 Sandisk Technologies Llc System, method and apparatus to relieve stresses in a semiconductor wafer caused by uneven internal metallization layers
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US10192832B2 (en) * 2016-08-16 2019-01-29 United Microelectronics Corp. Alignment mark structure with dummy pattern
US9929114B1 (en) 2016-11-02 2018-03-27 Vanguard International Semiconductor Corporation Bonding pad structure having island portions and method for manufacturing the same
JP6836418B2 (ja) * 2017-02-27 2021-03-03 ルネサスエレクトロニクス株式会社 半導体装置
US10910330B2 (en) * 2017-03-13 2021-02-02 Mediatek Inc. Pad structure and integrated circuit die using the same
US10566300B2 (en) * 2018-01-22 2020-02-18 Globalfoundries Inc. Bond pads with surrounding fill lines
CN110544683B (zh) * 2018-05-29 2021-03-19 澜起科技股份有限公司 用于检测金属间介质层缺陷的叠层结构及测试方法
US10861807B2 (en) * 2018-11-21 2020-12-08 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit features with obtuse angles and method forming same
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CN110491849B (zh) * 2019-07-18 2024-11-08 珠海零边界集成电路有限公司 芯片、输入输出结构和垫层
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CN113571479B (zh) * 2021-06-30 2024-08-27 华为数字能源技术有限公司 芯片封装组件的测试方法

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Publication number Publication date
CN100561693C (zh) 2009-11-18
CN101556945A (zh) 2009-10-14
US7241636B2 (en) 2007-07-10
KR20070099599A (ko) 2007-10-09
CN101167170A (zh) 2008-04-23
WO2006076082A2 (en) 2006-07-20
US7626276B2 (en) 2009-12-01
US20060154469A1 (en) 2006-07-13
TWI389226B (zh) 2013-03-11
CN101556945B (zh) 2012-05-23
US20070210442A1 (en) 2007-09-13
JP2008527710A (ja) 2008-07-24
TW200634957A (en) 2006-10-01
WO2006076082A3 (en) 2007-12-21

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