KR101197804B1 - 위상 시프트 마스크의 제조방법 - Google Patents

위상 시프트 마스크의 제조방법 Download PDF

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Publication number
KR101197804B1
KR101197804B1 KR1020067001823A KR20067001823A KR101197804B1 KR 101197804 B1 KR101197804 B1 KR 101197804B1 KR 1020067001823 A KR1020067001823 A KR 1020067001823A KR 20067001823 A KR20067001823 A KR 20067001823A KR 101197804 B1 KR101197804 B1 KR 101197804B1
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KR
South Korea
Prior art keywords
etching
film
light
mask layer
phase shift
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KR1020067001823A
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English (en)
Korean (ko)
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KR20060055527A (ko
Inventor
히데키 스다
Original Assignee
호야 가부시키가이샤
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Publication of KR20060055527A publication Critical patent/KR20060055527A/ko
Application granted granted Critical
Publication of KR101197804B1 publication Critical patent/KR101197804B1/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/29—Rim PSM or outrigger PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020067001823A 2003-08-15 2004-08-09 위상 시프트 마스크의 제조방법 KR101197804B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2003-00293835 2003-08-15
JP2003293835A JP4443873B2 (ja) 2003-08-15 2003-08-15 位相シフトマスクの製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020107002664A Division KR101140027B1 (ko) 2003-08-15 2004-08-09 위상 시프트 마스크의 제조방법

Publications (2)

Publication Number Publication Date
KR20060055527A KR20060055527A (ko) 2006-05-23
KR101197804B1 true KR101197804B1 (ko) 2012-12-24

Family

ID=34191010

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020067001823A KR101197804B1 (ko) 2003-08-15 2004-08-09 위상 시프트 마스크의 제조방법
KR1020107002664A KR101140027B1 (ko) 2003-08-15 2004-08-09 위상 시프트 마스크의 제조방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020107002664A KR101140027B1 (ko) 2003-08-15 2004-08-09 위상 시프트 마스크의 제조방법

Country Status (5)

Country Link
US (1) US7678509B2 (zh)
JP (1) JP4443873B2 (zh)
KR (2) KR101197804B1 (zh)
TW (2) TWI397106B (zh)
WO (1) WO2005017621A1 (zh)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4923465B2 (ja) * 2005-07-27 2012-04-25 凸版印刷株式会社 極端紫外線露光用マスクブランク、極端紫外線露光用マスク及びその製造方法並びにパターン転写方法
JP4823711B2 (ja) * 2006-02-16 2011-11-24 Ｈｏｙａ株式会社 パターン形成方法及び位相シフトマスクの製造方法
JP4800065B2 (ja) * 2006-02-16 2011-10-26 Ｈｏｙａ株式会社 位相シフトマスクの製造方法
JP4879603B2 (ja) 2006-02-16 2012-02-22 Ｈｏｙａ株式会社 パターン形成方法及び位相シフトマスクの製造方法
JP4764213B2 (ja) * 2006-03-10 2011-08-31 凸版印刷株式会社 レベンソン型位相シフトマスク及びその製造方法
JP4883278B2 (ja) * 2006-03-10 2012-02-22 信越化学工業株式会社 フォトマスクブランク及びフォトマスクの製造方法
JP4509050B2 (ja) 2006-03-10 2010-07-21 信越化学工業株式会社 フォトマスクブランク及びフォトマスク
JP4764214B2 (ja) * 2006-03-10 2011-08-31 凸版印刷株式会社 ハーフトーン型位相シフトマスク及びその製造方法
EP1857876A1 (en) * 2006-05-15 2007-11-21 Advanced Mask Technology Center GmbH & Co. KG Method of forming a phase shift mask
US7883822B2 (en) * 2007-10-17 2011-02-08 Texas Instruments Incorporated Graded lithographic mask
KR100882730B1 (ko) * 2007-11-06 2009-02-06 주식회사 동부하이텍 마스크 제조 방법
WO2009123172A1 (ja) * 2008-03-31 2009-10-08 Hoya株式会社 フォトマスクブランク、フォトマスクおよびフォトマスクブランクの製造方法
KR101076883B1 (ko) * 2009-03-10 2011-10-25 주식회사 하이닉스반도체 개선된 해상도를 가지는 위상전이마스크 및 제조 방법
JP5606028B2 (ja) * 2009-09-11 2014-10-15 Ｈｏｙａ株式会社 フォトマスクブランクおよびフォトマスクの製造方法
KR101656456B1 (ko) 2009-10-30 2016-09-12 삼성전자주식회사 하프톤형 위상반전 블랭크 포토마스크와 하프톤형 위상반전 포토마스크 및 그의 제조방법
JP5479074B2 (ja) 2009-12-21 2014-04-23 Ｈｏｙａ株式会社 光学素子の製造方法、光学素子
JP4697495B2 (ja) * 2010-05-28 2011-06-08 信越化学工業株式会社 フォトマスクブランク及びフォトマスクの製造方法
JP4922441B2 (ja) * 2010-07-29 2012-04-25 株式会社東芝 磁気記録媒体およびその製造方法
JP5820555B2 (ja) * 2011-03-31 2015-11-24 Hoya株式会社 マスクブランク及び位相シフトマスクの製造方法
JP4930736B2 (ja) * 2011-09-21 2012-05-16 信越化学工業株式会社 フォトマスクの製造方法及びフォトマスク
JP4930737B2 (ja) * 2011-09-21 2012-05-16 信越化学工業株式会社 フォトマスクブランク及びバイナリーマスクの製造方法
CN103890657A (zh) * 2011-10-21 2014-06-25 大日本印刷株式会社 大型相移掩模及大型相移掩模的制造方法
JP5459880B2 (ja) * 2012-07-20 2014-04-02 Ｈｏｙａ株式会社 マスクブランク及び転写用マスクの製造方法
JP6157832B2 (ja) * 2012-10-12 2017-07-05 Hoya株式会社 電子デバイスの製造方法、表示装置の製造方法、フォトマスクの製造方法、及びフォトマスク
CN104903792B (zh) * 2013-01-15 2019-11-01 Hoya株式会社 掩膜板坯料、相移掩膜板及其制造方法
JP6389375B2 (ja) * 2013-05-23 2018-09-12 Hoya株式会社 マスクブランクおよび転写用マスク並びにそれらの製造方法
JP5719948B2 (ja) * 2014-02-12 2015-05-20 Hoya株式会社 光学素子の製造方法
JP6292581B2 (ja) * 2014-03-30 2018-03-14 Hoya株式会社 マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法
JP5907634B2 (ja) * 2015-03-23 2016-04-26 Hoya株式会社 光学素子の製造方法
US9857679B2 (en) 2015-08-21 2018-01-02 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography mask and fabricating the same
KR102205274B1 (ko) * 2015-08-31 2021-01-20 호야 가부시키가이샤 마스크 블랭크, 마스크 블랭크의 제조 방법, 위상 시프트 마스크, 위상 시프트 마스크의 제조 방법, 및 반도체 디바이스의 제조 방법
CN110161799B (zh) * 2018-02-11 2020-08-04 京东方科技集团股份有限公司 一种相移掩模板、阵列基板、其制备方法及显示装置
CN108445707A (zh) * 2018-05-15 2018-08-24 睿力集成电路有限公司 相移掩模板、相移掩模光刻设备以及相移掩模板的制作方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10239827A (ja) 1997-02-28 1998-09-11 Nec Corp フォトマスク
JPH10319569A (ja) 1997-05-19 1998-12-04 Toshiba Corp 露光用マスク

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JP3272790B2 (ja) * 1992-12-03 2002-04-08 ホーヤ株式会社 位相シフトマスクの製造方法及び位相シフトマスクブランク
JPH0720625A (ja) 1993-07-06 1995-01-24 Sony Corp 位相シフトマスクの作製方法
KR100192360B1 (ko) * 1996-08-21 1999-06-15 구본준 위상 반전 마스크 제조방법
KR100322537B1 (ko) * 1999-07-02 2002-03-25 윤종용 블랭크 마스크 및 이를 이용한 위상 반전 마스크 제조방법
TWI259329B (en) * 2003-04-09 2006-08-01 Hoya Corp Method of manufacturing a photomask, and photomask blank
JP4823711B2 (ja) * 2006-02-16 2011-11-24 Ｈｏｙａ株式会社 パターン形成方法及び位相シフトマスクの製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10239827A (ja) 1997-02-28 1998-09-11 Nec Corp フォトマスク
JPH10319569A (ja) 1997-05-19 1998-12-04 Toshiba Corp 露光用マスク

Also Published As

Publication number Publication date
TW201025420A (en) 2010-07-01
JP2005062571A (ja) 2005-03-10
TWI397106B (zh) 2013-05-21
KR20100029270A (ko) 2010-03-16
US7678509B2 (en) 2010-03-16
WO2005017621A1 (ja) 2005-02-24
KR20060055527A (ko) 2006-05-23
US20060292454A1 (en) 2006-12-28
TWI446407B (zh) 2014-07-21
KR101140027B1 (ko) 2012-07-20
TW200507067A (en) 2005-02-16
JP4443873B2 (ja) 2010-03-31

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