KR101174554B1 - 칩-온-칩 및 패키지-온-패키지 기술을 위한 유연한 패키징 - Google Patents
칩-온-칩 및 패키지-온-패키지 기술을 위한 유연한 패키징 Download PDFInfo
- Publication number
- KR101174554B1 KR101174554B1 KR1020100022244A KR20100022244A KR101174554B1 KR 101174554 B1 KR101174554 B1 KR 101174554B1 KR 1020100022244 A KR1020100022244 A KR 1020100022244A KR 20100022244 A KR20100022244 A KR 20100022244A KR 101174554 B1 KR101174554 B1 KR 101174554B1
- Authority
- KR
- South Korea
- Prior art keywords
- integrated circuit
- package
- pads
- circuit
- chip
- Prior art date
Links
- 238000005516 engineering process Methods 0.000 title description 6
- 238000009459 flexible packaging Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 87
- 239000004020 conductor Substances 0.000 claims abstract description 69
- 238000004806 packaging method and process Methods 0.000 claims abstract description 43
- 230000015654 memory Effects 0.000 claims description 63
- 229910000679 solder Inorganic materials 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 7
- 239000010410 layer Substances 0.000 description 22
- 238000010586 diagram Methods 0.000 description 11
- 230000002093 peripheral effect Effects 0.000 description 6
- 239000004033 plastic Substances 0.000 description 6
- 229920003023 plastic Polymers 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 241000272168 Laridae Species 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 210000004185 liver Anatomy 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 230000005226 mechanical processes and functions Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000003643 water by type Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/10—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/105—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
- H01L25/0657—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/18—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of the types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, the devices being individual devices of subclass H10D or integrated devices of class H10
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13144—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/1319—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/241—Disposition
- H01L2224/24151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/24221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/24225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
- H01L2224/821—Forming a build-up interconnect
- H01L2224/82101—Forming a build-up interconnect by additive methods, e.g. direct writing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
- H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/0651—Wire or wire-like electrical connections from device to substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
- H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06517—Bump or bump-like direct electrical connections from device to substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
- H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06524—Electrical connections formed on device or on substrate, e.g. a deposited or grown layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
- H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06527—Special adaptation of electrical connections, e.g. rewiring, engineering changes, pressure contacts, layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
- H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06551—Conductive connections on the side of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
- H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
- H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
- H01L2225/06562—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking at least one device in the stack being rotated or offset
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
- H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06596—Structural arrangements for testing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
- H01L2225/10—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L2225/1005—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
- H01L2225/10—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L2225/1005—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
- H01L2225/1011—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement
- H01L2225/1017—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement the lowermost container comprising a device support
- H01L2225/1023—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement the lowermost container comprising a device support the support being an insulating substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
- H01L2225/10—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L2225/1005—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
- H01L2225/1011—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement
- H01L2225/1047—Details of electrical connections between containers
- H01L2225/1058—Bump or bump-like electrical connections, e.g. balls, pillars, posts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0102—Calcium [Ca]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
- H01L2924/143—Digital devices
- H01L2924/1433—Application-specific integrated circuit [ASIC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
- H01L2924/15172—Fan-out arrangement of the internal vias
- H01L2924/15173—Fan-out arrangement of the internal vias in a single layer of the multilayer substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
- H01L2924/15192—Resurf arrangement of the internal vias
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15312—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a pin array, e.g. PGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15313—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a land array, e.g. LGA
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
도 1은 집적 회로의 일 실시예를 나타내는 블록도.
도 2는 집적 회로용의 패키지의 일 실시예의 블록도.
도 3은 패키징된 집적 회로의 일 실시예의 측면도.
도 4는 집적 회로 및 2개의 다른 집적 회로의 칩-온-칩 패키징의 일 실시예의 블록도.
도 5는 집적 회로 및 2개의 다른 집적 회로의 패키지-온-패키지 패키징의 일 실시예의 블록도.
도 6은 집적 회로 및 2개의 다른 집적 회로의 칩-온-칩 패키징의 제2 실시예의 블록도.
도 7은 집적 회로를 패키징하는 일 실시예를 나타내는 순서도.
도 8은 시스템의 일 실시예의 블록도.
Claims (20)
- 집적 회로로서,
인터페이스에 대응하는 제1 물리적 층 인터페이스 회로(16A) - 상기 제1 물리적 층 인터페이스 회로에 의해 상기 집적 회로는 상기 집적 회로의 외부와 통신하도록 구성되고, 상기 제1 물리적 층 인터페이스 회로는 상기 인터페이스를 형성하는 각각의 도전체(conductor) 상에서 통신하기 위한 회로(circuitry)를 포함하고, 상기 제1 물리적 층 인터페이스 회로는 상기 집적 회로의 에지를 따라 물리적으로 위치됨 -; 및
또 다른 인터페이스에 대응하는 제2 물리적 층 인터페이스 회로(16B) - 상기 제2 물리적 층 인터페이스 회로에 의해 상기 집적 회로는 상기 집적 회로의 외부와 통신하도록 구성되고, 상기 제2 물리적 층 인터페이스 회로는 상기 또 다른 인터페이스를 형성하는 각각의 도전체 상에서 통신하기 위한 회로를 포함하고, 상기 제2 물리적 층 인터페이스 회로는 상기 에지에 인접한, 상기 집적 회로의 인접 에지를 따라 물리적으로 위치함 -
를 포함하는 집적 회로. - 제1항에 있어서, 상기 인터페이스 및 상기 또 다른 인터페이스는 동일 인터페이스의 인스턴스(instance)들인, 집적 회로.
- 제2항에 있어서, 상기 동일 인터페이스는 하나 또는 그 이상의 메모리 집적 회로들에 접속하는 메모리 인터페이스이고, 상기 집적 회로는 상기 제1 물리적 층 인터페이스회로에 결합되는 제1 메모리 콘트롤러(14A)와 상기 제2 물리적 층 인터페이스회로에 결합되는 제2 메모리 콘트롤러(14B)를 포함하는 집적 회로.
- 제1항에 있어서, 상기 제1 물리적 층 인터페이스 회로 위에 배열된 제1 복수의 C4 범프(controlled collapse chip connection bump)(18A, 18B)와, 상기 제2 물리적 층 인터페이스 회로 위에 배열된 제2 복수의 C4 범프(18C, 18D)를 더 포함하고, 상기 제1 복수의 C4 범프 및 상기 제2 복수의 C4 범프는 상기 인터페이스 및 상기 또 다른 인터페이스를 위해 상기 집적 회로의 패키지로의 플립 칩 접속(flip chip connection)을 제공하는, 집적 회로.
- 제4항에 있어서, 상기 제1 복수의 C4 범프는, 상기 제2 복수의 C4 범프와 직교하는 방향으로 배열되는, 집적 회로.
- 집적 회로를 위한 패키지로서,
제1 복수의 도전체(24)와, 자신의 표면을 형성하는 절연층을 포함하는 패키지 기판 - 상기 제1 복수의 도전체(24)의 각각은 제1 엔드포인트(endpoint)(28)를 포함하고, 상기 제1 엔드포인트들은 상기 집적 회로가 상기 패키지 기판에 장착되는 경우 플립 칩 구성으로 상기 집적 회로에 접속하도록 배열되고, 상기 절연층은 각각의 제1 엔드포인트에 대한 개구부를 포함하고, 상기 제1 복수의 도전체의 각각은 패키지 핀 접속이 이뤄지게 될 상기 패키지 기판의 상기 표면상의 개개의 제1 패드(32)까지 연장하고, 상기 제1 복수의 도전체의 각각은 상기 집적 회로가 상기 패키지 기판상에 장착되는 경우 상기 집적 회로의 측면에 근접한 개개의 제2 패드(30)를 포함하고, 상기 절연층은 각각의 개개의 제2 패드를 위한 개구부를 포함함 -;
상기 개개의 제1 패드들에 부착된 제1 패키지 핀 세트 - 상기 제1 패키지 핀 세트는 집합적으로 패키지-온-패키지(package-on-package) 구성에서 하나 또는 그 이상의 패키지화된 집적 회로들을 위한 장착 포인트를 제공함 -;
상기 절연층을 갖는 상기 표면의 맞은 편인 상기 패키지 기판의 또 다른 표면에 부착된 제2 패키지 핀 세트 - 상기 제2 패키지 핀 세트는 회로 보드로의 접속을 제공함 -; 및
상기 표면 상의 제2 엔드포인트 세트 - 상기 제2 엔드포인트 세트 각각은 상기 패키지 기판을 통해 상기 제2 패키지 핀 세트의 핀 각각에 연결되고 상기 제2 엔드포인트 세트는 상기 제1 엔드포인트와는 별개로 상기 집적 회로에 연결되도록 배열됨 -를 포함하는 집적 회로를 위한 패키지. - 제6항에 있어서,
상기 패키지 기판은 제2 복수의 도전체(26)를 더 포함하고, 상기 제2 복수의 도전체의 각각은 상기 집적 회로가 상기 패키지 기판에 장착되는 경우 상기 플립 칩 구성으로 상기 집적 회로에 접속하도록 배열된 상기 제1 엔드포인트를 포함하고, 상기 절연층은 각각의 제1 엔드포인트를 위한 개구부를 포함하고,
상기 제2 복수의 도전체의 각각은 상기 패키지 핀 접속이 이뤄지게 될 상기 패키지 기판의 상기 표면상의 상기 개개의 제1 패드로 연장하고,
상기 제2 복수의 도전체의 각각은 상기 집적 회로가 상기 패키지 기판상에 장착되는 경우 상기 집적 회로의 또 다른 측면에 근접한 개개의 제3 패드(30')를 포함하고, 상기 또 다른 측면은 상기 측면과 직교하고, 상기 절연층은 각각의 개개의 제3 패드를 위한 개구부를 포함하는 집적 회로를 위한 패키지. - 삭제
- 제6항에 있어서, 상기 패키지 핀들은 솔더 볼(solder ball)들인, 집적 회로를 위한 패키지.
- 삭제
- 컴포넌트로서,
패키지 기판;
상기 패키지 기판에 장착된 제1 집적 회로(10) 플립 칩 - 상기 패키지 기판은 제1 집적 회로의 측면에 근접한 제1 복수의 패드(30)와 상기 제1 복수의 패드에 근접한 상기 측면에 인접한, 상기 제1 집적 회로의 또 다른 측면에 근접한 제2 복수의 패드(30')를 포함함 -;
자신의 에지를 따라 제3 복수의 패드(54)를 갖는 제2 집적 회로(50) - 상기 제2 집적 회로는 상기 제3 복수의 패드가 상기 제1 복수의 패드에 대해 정렬되면서 상기 제1 집적 회로 상에 적층됨 -;
자신의 에지를 따라 제4 복수의 패드(56)를 갖는 제3 집적 회로(52) - 상기 제3 집적 회로는 상기 제2 집적 회로에 대한 직교 배향(orthogonal orientation)으로 또한 상기 제4 복수의 패드가 상기 제2 복수의 패드에 대해 정렬되면서 상기 제2 집적 회로 상에 적층됨 -; 및,
상기 제1 복수의 패드의 각각을 상기 제3 복수의 패드의 각각에 접속하고 또한 상기 제2 복수의 패드의 각각을 상기 제4 복수의 패드의 각각에 접속하는 복수의 도전체를 포함하고,
상기 제1 집적 회로는,
인터페이스에 대응하는 제1 물리적 층 인터페이스 회로(16A) - 상기 제1 물리적 층 인터페이스 회로에 의해 상기 집적 회로는 상기 집적 회로의 외부와 통신하도록 구성되고, 상기 제1 물리적 층 인터페이스 회로는 상기 인터페이스를 형성하는 각각의 도전체(conductor) 상에서 통신하기 위한 회로(circuitry)를 포함하고, 상기 제1 물리적 층 인터페이스 회로는 상기 측면을 따라 물리적으로 위치하고, 상기 제1 복수의 패드에 연결됨; 및
또 다른 인터페이스에 대응하는 제2 물리적 층 인터페이스 회로(16B) - 상기 제2 물리적 층 인터페이스 회로에 의해 상기 집적 회로는 상기 집적 회로의 외부와 통신하도록 구성되고, 상기 제2 물리적 층 인터페이스 회로는 상기 또 다른 인터페이스를 형성하는 각각의 도전체 상에서 통신하기 위한 회로를 포함하고, 상기 제2 물리적 층 인터페이스 회로는 상기 또 다른 측면을 따라 물리적으로 위치되고, 상기 제2 복수의 패드에 연결됨 -을 포함하는,
컴포넌트. - 제11항에 있어서,
상기 제2 집적 회로 및 상기 제3 집적 회로는 플립 칩이 아닌 배향(non-flip-chip orientation)으로 장착되는, 컴포넌트. - 제11항에 있어서, 상기 제2 집적 회로 및 상기 제3 집적 회로는 동일 집적 회로의 인스턴스들인, 컴포넌트.
- 제13항에 있어서, 상기 제3 집적 회로는 상기 제2 복수의 패드를 노출시키도록 상기 제2 집적 회로로부터 오프셋되는, 컴포넌트.
- 제13항에 있어서, 상기 제2 및 제3 집적 회로들은 메모리 집적 회로들인, 컴포넌트.
- 제15항에 있어서, 상기 제1 복수의 패드는 상기 제1 집적 회로에서 제1 메모리 콘트롤러(14A)에 대응하는 메모리 인터페이스에 접속하고, 상기 제2 복수의 패드는 상기 제1 집적 회로에서 제2 메모리 콘트롤러(14B)에 대응하는 또 다른 메모리 인터페이스에 접속하는, 컴포넌트.
- 제11항에 있어서, 상기 제1 복수의 패드 및 상기 제2 복수의 패드는 복수의 패키지 핀에 접속되는 제5 복수의 패드(32)의 개개의 것에 또한 접속되는, 컴포넌트.
- 제17항에 있어서, 상기 복수의 패키지 핀은 각각 솔더 볼인, 컴포넌트.
- 집적 회로를 위한 패키지를 제공하는 단계 - 상기 패키지는 상기 집적 회로에 접속하기 위한 제1 복수의 도전체(24)와 제2 복수의 도전체(26)를 포함하는 패키지 기판을 포함하고, 상기 제1 복수의 도전체의 각각은 상기 집적 회로의 측면에 근접한 제1 패드(30)를 포함하고, 상기 제2 복수의 도전체의 각각은 상기 집적 회로의 또 다른 측면에 근접한 제2 패드(30')를 포함하고, 상기 또 다른 측면은 상기 측면에 인접하고, 상기 제1 복수의 도전체와 상기 제2 복수의 도전체의 각각은 패키지 핀들이 접속되는 제2 복수의 패드들(32)로 연장함 - 와,
둘 또는 그 이상의 집적 회로들의 제1 집적 회로(50)를 위한 상기 제1 복수의 도전체들 상의 상기 제1 패드들을 사용하고 또한 상기 집적 회로들의 제2 집적 회로(52)를 위한 상기 제2 복수의 도전체들 상의 상기 제2 패드들을 사용하는 칩-온-칩(chip-on-chip) 패키징을 이용하여 상기 둘 또는 그 이상의 집적 회로들을 접속하는 단계 - 상기 제1 집적 회로는 상기 제2 집적 회로와 직교하게 배향됨 - 와,
상기 칩-온-칩 패키징이 신뢰성 있는지를 판정하는 단계와,
상기 제2 복수의 패드와, 상기 제1 복수의 도전체와 상기 제2 복수의 도전체의 상기 제2 복수의 패드로의 연장부를 제거함으로써, 후속의 집적 회로를 위해 상기 패키지 기판을 감축하는 단계
를 포함하는 방법. - 제19항에 있어서,
상기 패키지의 또 다른 인스턴스를 제공하는 단계와,
패키지-온-패키지 구성에서 두 개 또는 그 이상의 패키지화된 집적 회로들을 상기 패키지 핀들에게 접속하는 단계
를 더 포함하는 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/402,633 | 2009-03-12 | ||
US12/402,633 US8097956B2 (en) | 2009-03-12 | 2009-03-12 | Flexible packaging for chip-on-chip and package-on-package technologies |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20100103418A KR20100103418A (ko) | 2010-09-27 |
KR101174554B1 true KR101174554B1 (ko) | 2012-08-16 |
Family
ID=42111456
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020100022244A KR101174554B1 (ko) | 2009-03-12 | 2010-03-12 | 칩-온-칩 및 패키지-온-패키지 기술을 위한 유연한 패키징 |
Country Status (6)
Country | Link |
---|---|
US (2) | US8097956B2 (ko) |
EP (1) | EP2228822A3 (ko) |
JP (1) | JP2010219539A (ko) |
KR (1) | KR101174554B1 (ko) |
CN (2) | CN101840917B (ko) |
WO (1) | WO2010104703A1 (ko) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101142338B1 (ko) * | 2010-06-17 | 2012-05-17 | 에스케이하이닉스 주식회사 | 반도체 칩 및 그의 제조방법 및 이를 이용한 스택 패키지 |
US8587088B2 (en) * | 2011-02-17 | 2013-11-19 | Apple Inc. | Side-mounted controller and methods for making the same |
CN103875214B (zh) * | 2011-08-10 | 2017-05-03 | 马维尔国际贸易有限公司 | 用于以太网网络的具有安全检测的智能phy |
US8826447B2 (en) * | 2011-10-10 | 2014-09-02 | Marvell World Trade Ltd. | Intelligent connectors integrating magnetic modular jacks and intelligent physical layer devices |
US8868820B2 (en) * | 2011-10-31 | 2014-10-21 | Microsemi SoC Corporation | RAM block designed for efficient ganging |
US10163877B2 (en) * | 2011-11-07 | 2018-12-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | System in package process flow |
US8806407B2 (en) | 2012-12-31 | 2014-08-12 | Synopsys, Inc. | Multiple-instantiated-module (MIM) aware pin assignment |
KR102110984B1 (ko) | 2013-03-04 | 2020-05-14 | 삼성전자주식회사 | 적층형 반도체 패키지 |
US9087846B2 (en) | 2013-03-13 | 2015-07-21 | Apple Inc. | Systems and methods for high-speed, low-profile memory packages and pinout designs |
US9674957B2 (en) | 2014-02-04 | 2017-06-06 | Samsung Display Co., Ltd. | Display device and method of manufacturing the same |
US9646952B2 (en) | 2015-09-17 | 2017-05-09 | Intel Corporation | Microelectronic package debug access ports |
US20170083461A1 (en) * | 2015-09-22 | 2017-03-23 | Qualcomm Incorporated | Integrated circuit with low latency and high density routing between a memory controller digital core and i/os |
JP2019520636A (ja) | 2016-06-27 | 2019-07-18 | アップル インコーポレイテッドApple Inc. | 高密度低バンド幅メモリと低密度高バンド幅メモリを組み合わせたメモリシステム |
US10164358B2 (en) * | 2016-09-30 | 2018-12-25 | Western Digital Technologies, Inc. | Electrical feed-through and connector configuration |
US20200006306A1 (en) * | 2018-07-02 | 2020-01-02 | Shanghai Denglin Technologies Co. Ltd | Configurable random-access memory (ram) array including through-silicon via (tsv) bypassing physical layer |
JP7226358B2 (ja) * | 2020-02-05 | 2023-02-21 | 株式会社デンソー | 電子機器 |
US11742253B2 (en) * | 2020-05-08 | 2023-08-29 | Qualcomm Incorporated | Selective mold placement on integrated circuit (IC) packages and methods of fabricating |
CN112261781A (zh) * | 2020-10-20 | 2021-01-22 | Oppo广东移动通信有限公司 | 一种封装模组及终端 |
US11791326B2 (en) | 2021-05-10 | 2023-10-17 | International Business Machines Corporation | Memory and logic chip stack with a translator chip |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100851072B1 (ko) | 2007-03-02 | 2008-08-12 | 삼성전기주식회사 | 전자 패키지 및 그 제조방법 |
Family Cites Families (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE68926886T2 (de) * | 1989-09-15 | 1997-02-06 | International Business Machines Corp., Armonk, N.Y. | Designmethode für auf einem Träger angeordnete VLSI-Chips und resultierender Modul |
US5347428A (en) | 1992-12-03 | 1994-09-13 | Irvine Sensors Corporation | Module comprising IC memory stack dedicated to and structurally combined with an IC microprocessor chip |
US6486528B1 (en) | 1994-06-23 | 2002-11-26 | Vertical Circuits, Inc. | Silicon segment programming apparatus and three terminal fuse configuration |
US5583749A (en) | 1994-11-30 | 1996-12-10 | Altera Corporation | Baseboard and daughtercard apparatus for reconfigurable computing systems |
US5696031A (en) * | 1996-11-20 | 1997-12-09 | Micron Technology, Inc. | Device and method for stacking wire-bonded integrated circuit dice on flip-chip bonded integrated circuit dice |
TW449844B (en) * | 1997-05-17 | 2001-08-11 | Hyundai Electronics Ind | Ball grid array package having an integrated circuit chip |
SG75873A1 (en) * | 1998-09-01 | 2000-10-24 | Texas Instr Singapore Pte Ltd | Stacked flip-chip integrated circuit assemblage |
US6586266B1 (en) | 1999-03-01 | 2003-07-01 | Megic Corporation | High performance sub-system design and assembly |
US6140710A (en) | 1999-05-05 | 2000-10-31 | Lucent Technologies Inc. | Power and ground and signal layout for higher density integrated circuit connections with flip-chip bonding |
JP2000315776A (ja) | 1999-05-06 | 2000-11-14 | Hitachi Ltd | 半導体装置 |
JP3832170B2 (ja) * | 2000-01-06 | 2006-10-11 | セイコーエプソン株式会社 | マルチベアチップ実装体 |
US6900528B2 (en) * | 2001-06-21 | 2005-05-31 | Micron Technology, Inc. | Stacked mass storage flash memory package |
KR100831235B1 (ko) | 2002-06-07 | 2008-05-22 | 삼성전자주식회사 | 박막 트랜지스터 기판 |
US8837161B2 (en) | 2002-07-16 | 2014-09-16 | Nvidia Corporation | Multi-configuration processor-memory substrate device |
US6858945B2 (en) | 2002-08-21 | 2005-02-22 | Broadcom Corporation | Multi-concentric pad arrangements for integrated circuit pads |
JP4105524B2 (ja) * | 2002-10-23 | 2008-06-25 | 株式会社東芝 | 半導体装置 |
JP4264640B2 (ja) * | 2003-08-19 | 2009-05-20 | ソニー株式会社 | 半導体装置の製造方法 |
TWI221336B (en) * | 2003-08-29 | 2004-09-21 | Advanced Semiconductor Eng | Integrated circuit with embedded passive component in flip-chip connection and method for manufacturing the same |
US7205178B2 (en) * | 2004-03-24 | 2007-04-17 | Freescale Semiconductor, Inc. | Land grid array packaged device and method of forming same |
US7215018B2 (en) | 2004-04-13 | 2007-05-08 | Vertical Circuits, Inc. | Stacked die BGA or LGA component assembly |
US7245021B2 (en) | 2004-04-13 | 2007-07-17 | Vertical Circuits, Inc. | Micropede stacked die component assembly |
US7459772B2 (en) | 2004-09-29 | 2008-12-02 | Actel Corporation | Face-to-face bonded I/O circuit die and functional logic circuit die system |
DE102004057239B4 (de) | 2004-11-26 | 2024-06-06 | Austriamicrosystems Ag | Vorrichtung und Verfahren zum Laden und zur Ladungskontrolle eines Akkumulators |
CN1828890A (zh) * | 2005-03-03 | 2006-09-06 | 因芬尼昂技术股份公司 | 具有重新路由层集成电路及堆叠管芯组 |
US7317256B2 (en) | 2005-06-01 | 2008-01-08 | Intel Corporation | Electronic packaging including die with through silicon via |
CA2621505C (en) | 2005-09-06 | 2015-06-30 | Aviv Soffer | 3-dimensional multi-layered modular computer architecture |
JP4473807B2 (ja) | 2005-10-27 | 2010-06-02 | パナソニック株式会社 | 積層半導体装置及び積層半導体装置の下層モジュール |
WO2007069107A2 (en) | 2005-12-13 | 2007-06-21 | Koninklijke Philips Electronics N.V. | Display devices with ambient light sensing |
JP2007250935A (ja) * | 2006-03-17 | 2007-09-27 | Renesas Technology Corp | 半導体装置と半導体装置の製造方法 |
CN101083243B (zh) * | 2006-05-12 | 2011-06-22 | 美国博通公司 | 集成电路封装及其制造方法 |
US7910385B2 (en) * | 2006-05-12 | 2011-03-22 | Micron Technology, Inc. | Method of fabricating microelectronic devices |
JP5259059B2 (ja) * | 2006-07-04 | 2013-08-07 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
KR100800161B1 (ko) | 2006-09-30 | 2008-02-01 | 주식회사 하이닉스반도체 | 관통 실리콘 비아 형성방법 |
KR100780966B1 (ko) | 2006-12-07 | 2007-12-03 | 삼성전자주식회사 | 반도체 패키지 및 그 제조 방법 |
JP2008166430A (ja) | 2006-12-27 | 2008-07-17 | Toshiba Microelectronics Corp | 半導体装置 |
WO2008115744A1 (en) | 2007-03-16 | 2008-09-25 | Vertical Circuits, Inc. | Vertical electrical interconnect formed on support prior to die mount |
JP2008299997A (ja) * | 2007-06-01 | 2008-12-11 | Toshiba Corp | 半導体記憶装置 |
US20080303154A1 (en) | 2007-06-11 | 2008-12-11 | Hon-Lin Huang | Through-silicon via interconnection formed with a cap layer |
US8723332B2 (en) | 2007-06-11 | 2014-05-13 | Invensas Corporation | Electrically interconnected stacked die assemblies |
WO2008157722A1 (en) | 2007-06-19 | 2008-12-24 | Vertical Circuits, Inc. | Wafer level surface passivation of stackable integrated circuit chips |
WO2008157779A2 (en) | 2007-06-20 | 2008-12-24 | Vertical Circuits, Inc. | Three-dimensional circuitry formed on integrated circuit device using two- dimensional fabrication |
KR100871381B1 (ko) | 2007-06-20 | 2008-12-02 | 주식회사 하이닉스반도체 | 관통 실리콘 비아 칩 스택 패키지 |
-
2009
- 2009-03-12 US US12/402,633 patent/US8097956B2/en active Active
-
2010
- 2010-03-02 WO PCT/US2010/025948 patent/WO2010104703A1/en active Application Filing
- 2010-03-04 EP EP10155547A patent/EP2228822A3/en not_active Ceased
- 2010-03-12 CN CN2010101353021A patent/CN101840917B/zh active Active
- 2010-03-12 JP JP2010083649A patent/JP2010219539A/ja active Pending
- 2010-03-12 CN CN201110405070.1A patent/CN102522393B/zh active Active
- 2010-03-12 KR KR1020100022244A patent/KR101174554B1/ko active IP Right Grant
-
2011
- 2011-12-12 US US13/323,168 patent/US8470613B2/en active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100851072B1 (ko) | 2007-03-02 | 2008-08-12 | 삼성전기주식회사 | 전자 패키지 및 그 제조방법 |
Also Published As
Publication number | Publication date |
---|---|
CN102522393A (zh) | 2012-06-27 |
US20100230825A1 (en) | 2010-09-16 |
US20120083052A1 (en) | 2012-04-05 |
CN101840917B (zh) | 2013-02-06 |
KR20100103418A (ko) | 2010-09-27 |
CN102522393B (zh) | 2014-12-10 |
WO2010104703A1 (en) | 2010-09-16 |
US8097956B2 (en) | 2012-01-17 |
CN101840917A (zh) | 2010-09-22 |
EP2228822A3 (en) | 2010-11-03 |
EP2228822A2 (en) | 2010-09-15 |
JP2010219539A (ja) | 2010-09-30 |
US8470613B2 (en) | 2013-06-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101174554B1 (ko) | 칩-온-칩 및 패키지-온-패키지 기술을 위한 유연한 패키징 | |
US9633975B2 (en) | Multi-die wirebond packages with elongated windows | |
US9508629B2 (en) | Memory module in a package | |
US8513817B2 (en) | Memory module in a package | |
US9640515B2 (en) | Multiple die stacking for two or more die | |
KR101076062B1 (ko) | 오프셋 집적 회로 패키지-온-패키지 적층 시스템 | |
JP2009506571A (ja) | インターポーザー基板に接続するための中間コンタクトを有するマイクロ電子デバイスおよびそれに関連する中間コンタクトを備えたマイクロ電子デバイスをパッケージする方法 | |
WO2014066153A1 (en) | Multiple die stacking for two or more die | |
WO2012145115A1 (en) | Stacked chip-on-board module with edge connector | |
KR20090063090A (ko) | 플래시-방지 구조체를 구비한 오프셋 적층형 집적회로 패키지 시스템 | |
EP2929561B1 (en) | Package on package microelectronic assembly | |
KR20130000319A (ko) | 수직 상호연결들을 갖는 집적 회로 패키징 시스템 및 그 제조 방법 | |
US9093439B2 (en) | Semiconductor package and method of fabricating the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 20100312 |
|
PA0201 | Request for examination | ||
PG1501 | Laying open of application | ||
E902 | Notification of reason for refusal | ||
PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20110628 Patent event code: PE09021S01D |
|
AMND | Amendment | ||
E601 | Decision to refuse application | ||
PE0601 | Decision on rejection of patent |
Patent event date: 20120227 Comment text: Decision to Refuse Application Patent event code: PE06012S01D Patent event date: 20110628 Comment text: Notification of reason for refusal Patent event code: PE06011S01I |
|
AMND | Amendment | ||
PX0901 | Re-examination |
Patent event code: PX09011S01I Patent event date: 20120227 Comment text: Decision to Refuse Application Patent event code: PX09012R01I Patent event date: 20110824 Comment text: Amendment to Specification, etc. |
|
PX0701 | Decision of registration after re-examination |
Patent event date: 20120629 Comment text: Decision to Grant Registration Patent event code: PX07013S01D Patent event date: 20120522 Comment text: Amendment to Specification, etc. Patent event code: PX07012R01I Patent event date: 20120227 Comment text: Decision to Refuse Application Patent event code: PX07011S01I Patent event date: 20110824 Comment text: Amendment to Specification, etc. Patent event code: PX07012R01I |
|
X701 | Decision to grant (after re-examination) | ||
GRNT | Written decision to grant | ||
PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 20120809 Patent event code: PR07011E01D |
|
PR1002 | Payment of registration fee |
Payment date: 20120809 End annual number: 3 Start annual number: 1 |
|
PG1601 | Publication of registration | ||
FPAY | Annual fee payment |
Payment date: 20150716 Year of fee payment: 4 |
|
PR1001 | Payment of annual fee |
Payment date: 20150716 Start annual number: 4 End annual number: 4 |
|
FPAY | Annual fee payment |
Payment date: 20160720 Year of fee payment: 5 |
|
PR1001 | Payment of annual fee |
Payment date: 20160720 Start annual number: 5 End annual number: 5 |
|
FPAY | Annual fee payment |
Payment date: 20170719 Year of fee payment: 6 |
|
PR1001 | Payment of annual fee |
Payment date: 20170719 Start annual number: 6 End annual number: 6 |
|
FPAY | Annual fee payment |
Payment date: 20180718 Year of fee payment: 7 |
|
PR1001 | Payment of annual fee |
Payment date: 20180718 Start annual number: 7 End annual number: 7 |
|
FPAY | Annual fee payment |
Payment date: 20190718 Year of fee payment: 8 |
|
PR1001 | Payment of annual fee |
Payment date: 20190718 Start annual number: 8 End annual number: 8 |
|
PR1001 | Payment of annual fee |
Payment date: 20200715 Start annual number: 9 End annual number: 9 |
|
PR1001 | Payment of annual fee |
Payment date: 20220630 Start annual number: 11 End annual number: 11 |
|
PR1001 | Payment of annual fee |
Payment date: 20230628 Start annual number: 12 End annual number: 12 |