KR101132076B1 - 나노선 복합체 및 나노선 복합체로부터 전자 기판을제조하기 위한 시스템 및 프로세스 - Google Patents

나노선 복합체 및 나노선 복합체로부터 전자 기판을제조하기 위한 시스템 및 프로세스 Download PDF

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KR101132076B1
KR101132076B1 KR1020067002377A KR20067002377A KR101132076B1 KR 101132076 B1 KR101132076 B1 KR 101132076B1 KR 1020067002377 A KR1020067002377 A KR 1020067002377A KR 20067002377 A KR20067002377 A KR 20067002377A KR 101132076 B1 KR101132076 B1 KR 101132076B1
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nanowire
nanowires
composite
substrate
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KR20060087500A (ko
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미하이 버레티
지안 첸
캘빈 코우
춘밍 니우
야오링 팬
제이. 왈래스 패스
린다 티. 로마노
데이비드 스텀보
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나노시스, 인크.
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/122—Nanowire, nanosheet or nanotube semiconductor bodies oriented at angles to substrates, e.g. perpendicular to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/123—Nanowire, nanosheet or nanotube semiconductor bodies comprising junctions
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2913—Rod, strand, filament or fiber

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Luminescent Compositions (AREA)
KR1020067002377A 2003-08-04 2004-08-04 나노선 복합체 및 나노선 복합체로부터 전자 기판을제조하기 위한 시스템 및 프로세스 Expired - Lifetime KR101132076B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US49197903P 2003-08-04 2003-08-04
US60/491,979 2003-08-04
PCT/US2004/025064 WO2005017962A2 (en) 2003-08-04 2004-08-04 System and process for producing nanowire composites and electronic substrates therefrom

Publications (2)

Publication Number Publication Date
KR20060087500A KR20060087500A (ko) 2006-08-02
KR101132076B1 true KR101132076B1 (ko) 2012-04-02

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KR1020067002377A Expired - Lifetime KR101132076B1 (ko) 2003-08-04 2004-08-04 나노선 복합체 및 나노선 복합체로부터 전자 기판을제조하기 위한 시스템 및 프로세스

Country Status (8)

Country Link
US (4) US7091120B2 (https=)
EP (1) EP1652218A2 (https=)
JP (1) JP2007501525A (https=)
KR (1) KR101132076B1 (https=)
CN (1) CN1863954B (https=)
AU (1) AU2004265938B2 (https=)
CA (1) CA2532991A1 (https=)
WO (1) WO2005017962A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160014219A (ko) * 2014-07-29 2016-02-11 한국세라믹기술원 폴리머 매트릭스 내 금속 나노와이어의 3차원 네트워크를 이용한 촉감센서 및 그 제조방법

Families Citing this family (226)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7454295B2 (en) 1998-12-17 2008-11-18 The Watereye Corporation Anti-terrorism water quality monitoring system
US9056783B2 (en) 1998-12-17 2015-06-16 Hach Company System for monitoring discharges into a waste water collection system
US8958917B2 (en) 1998-12-17 2015-02-17 Hach Company Method and system for remote monitoring of fluid quality and treatment
US7301199B2 (en) * 2000-08-22 2007-11-27 President And Fellows Of Harvard College Nanoscale wires and related devices
US20060175601A1 (en) * 2000-08-22 2006-08-10 President And Fellows Of Harvard College Nanoscale wires and related devices
CN101887935B (zh) * 2000-08-22 2013-09-11 哈佛学院董事会 掺杂的拉长半导体,其生长,包含这类半导体的器件及其制造
KR20030055346A (ko) * 2000-12-11 2003-07-02 프레지던트 앤드 펠로우즈 오브 하버드 칼리지 나노센서
US6872645B2 (en) * 2002-04-02 2005-03-29 Nanosys, Inc. Methods of positioning and/or orienting nanostructures
US7589029B2 (en) 2002-05-02 2009-09-15 Micron Technology, Inc. Atomic layer deposition and conversion
US8294025B2 (en) * 2002-06-08 2012-10-23 Solarity, Llc Lateral collection photovoltaics
AU2003261205A1 (en) 2002-07-19 2004-02-09 President And Fellows Of Harvard College Nanoscale coherent optical components
AU2003304297A1 (en) * 2002-08-23 2005-01-21 Sungho Jin Article comprising gated field emission structures with centralized nanowires and method for making the same
US8920619B2 (en) 2003-03-19 2014-12-30 Hach Company Carbon nanotube sensor
US7041530B2 (en) * 2003-06-12 2006-05-09 Matsushita Electric Industrial Co., Ltd. Method of production of nano particle dispersed composite material
US7118941B2 (en) * 2003-06-25 2006-10-10 Intel Corporation Method of fabricating a composite carbon nanotube thermal interface device
JP2007501525A (ja) * 2003-08-04 2007-01-25 ナノシス・インコーポレイテッド ナノワイヤ複合体およびこれらに由来する電子基板を作製するためのシステムおよび方法
US7038299B2 (en) * 2003-12-11 2006-05-02 International Business Machines Corporation Selective synthesis of semiconducting carbon nanotubes
US7208094B2 (en) * 2003-12-17 2007-04-24 Hewlett-Packard Development Company, L.P. Methods of bridging lateral nanowires and device using same
US7112525B1 (en) * 2003-12-22 2006-09-26 University Of South Florida Method for the assembly of nanowire interconnects
US20090227107A9 (en) * 2004-02-13 2009-09-10 President And Fellows Of Havard College Nanostructures Containing Metal Semiconductor Compounds
US7595528B2 (en) 2004-03-10 2009-09-29 Nanosys, Inc. Nano-enabled memory devices and anisotropic charge carrying arrays
EP1723676A4 (en) 2004-03-10 2009-04-15 Nanosys Inc MEMORY BLOCKS WITH NANO-ABILITY AND ANISOTROPE CHARGE CARRIER ARRAYS
WO2005094440A2 (en) * 2004-03-18 2005-10-13 Nanosys Inc. Nanofiber surface based capacitors
US7195733B2 (en) 2004-04-27 2007-03-27 The Board Of Trustees Of The University Of Illinois Composite patterning devices for soft lithography
KR20050104839A (ko) * 2004-04-29 2005-11-03 삼성에스디아이 주식회사 전자 방출원 제조 방법, 전자 방출원 및 상기 전자방출원을 구비하는 전자 방출 소자
US7785922B2 (en) 2004-04-30 2010-08-31 Nanosys, Inc. Methods for oriented growth of nanowires on patterned substrates
US7799699B2 (en) 2004-06-04 2010-09-21 The Board Of Trustees Of The University Of Illinois Printable semiconductor structures and related methods of making and assembling
CN102683391B (zh) 2004-06-04 2015-11-18 伊利诺伊大学评议会 用于制造并组装可印刷半导体元件的方法和设备
US8217381B2 (en) 2004-06-04 2012-07-10 The Board Of Trustees Of The University Of Illinois Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics
US7521292B2 (en) 2004-06-04 2009-04-21 The Board Of Trustees Of The University Of Illinois Stretchable form of single crystal silicon for high performance electronics on rubber substrates
US7943491B2 (en) 2004-06-04 2011-05-17 The Board Of Trustees Of The University Of Illinois Pattern transfer printing by kinetic control of adhesion to an elastomeric stamp
US7968273B2 (en) 2004-06-08 2011-06-28 Nanosys, Inc. Methods and devices for forming nanostructure monolayers and devices including such monolayers
CN102064102B (zh) 2004-06-08 2013-10-30 桑迪士克公司 形成单层纳米结构的方法和器件以及包含这种单层的器件
US8088483B1 (en) 2004-06-08 2012-01-03 Nanosys, Inc. Process for group 10 metal nanostructure synthesis and compositions made using same
US7776758B2 (en) 2004-06-08 2010-08-17 Nanosys, Inc. Methods and devices for forming nanostructure monolayers and devices including such monolayers
TW201341440A (zh) 2004-06-08 2013-10-16 Sandisk Corp 奈米結構之沉積後包封：併入該包封體之組成物、裝置及系統
US8563133B2 (en) 2004-06-08 2013-10-22 Sandisk Corporation Compositions and methods for modulation of nanostructure energy levels
WO2006107312A1 (en) * 2004-06-15 2006-10-12 President And Fellows Of Harvard College Nanosensors
US8558311B2 (en) * 2004-09-16 2013-10-15 Nanosys, Inc. Dielectrics using substantially longitudinally oriented insulated conductive wires
US7365395B2 (en) * 2004-09-16 2008-04-29 Nanosys, Inc. Artificial dielectrics using nanostructures
US8089152B2 (en) * 2004-09-16 2012-01-03 Nanosys, Inc. Continuously variable graded artificial dielectrics using nanostructures
US20060060839A1 (en) * 2004-09-22 2006-03-23 Chandross Edwin A Organic semiconductor composition
WO2006124055A2 (en) * 2004-10-12 2006-11-23 Nanosys, Inc. Fully integrated organic layered processes for making plastic electronics based on conductive polymers and semiconductor nanowires
US7560366B1 (en) 2004-12-02 2009-07-14 Nanosys, Inc. Nanowire horizontal growth and substrate removal
CN101124638A (zh) * 2004-12-06 2008-02-13 哈佛大学 基于纳米尺度线的数据存储
US8278011B2 (en) 2004-12-09 2012-10-02 Nanosys, Inc. Nanostructured catalyst supports
WO2006062947A2 (en) * 2004-12-09 2006-06-15 Nanosys, Inc. Nanowire-based membrane electrode assemblies for fuel cells
US7939218B2 (en) 2004-12-09 2011-05-10 Nanosys, Inc. Nanowire structures comprising carbon
US20060240218A1 (en) * 2005-04-26 2006-10-26 Nanosys, Inc. Paintable nonofiber coatings
US7309621B2 (en) * 2005-04-26 2007-12-18 Sharp Laboratories Of America, Inc. Method to fabricate a nanowire CHEMFET sensor device using selective nanowire deposition
US7230286B2 (en) 2005-05-23 2007-06-12 International Business Machines Corporation Vertical FET with nanowire channels and a silicided bottom contact
US20100227382A1 (en) * 2005-05-25 2010-09-09 President And Fellows Of Harvard College Nanoscale sensors
WO2006130359A2 (en) * 2005-06-02 2006-12-07 Nanosys, Inc. Light emitting nanowires for macroelectronics
WO2006132659A2 (en) * 2005-06-06 2006-12-14 President And Fellows Of Harvard College Nanowire heterostructures
JP4856900B2 (ja) * 2005-06-13 2012-01-18 パナソニック株式会社 電界効果トランジスタの製造方法
WO2006135336A1 (en) * 2005-06-16 2006-12-21 Qunano Ab Semiconductor nanowire transistor
US20070004225A1 (en) * 2005-06-30 2007-01-04 Donghui Lu Low-temperature catalyzed formation of segmented nanowire of dielectric material
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
US7989290B2 (en) * 2005-08-04 2011-08-02 Micron Technology, Inc. Methods for forming rhodium-based charge traps and apparatus including rhodium-based charge traps
US7575978B2 (en) 2005-08-04 2009-08-18 Micron Technology, Inc. Method for making conductive nanoparticle charge storage element
SG150514A1 (en) 2005-08-12 2009-03-30 Cambrios Technologies Corp Nanowires-based transparent conductors
KR100691276B1 (ko) 2005-08-25 2007-03-12 삼성전기주식회사 나노와이어 발광 소자 및 제조방법
KR100647699B1 (ko) * 2005-08-30 2006-11-23 삼성에스디아이 주식회사 나노 반도체 시트, 상기 나노 반도체 시트의 제조방법,상기 나노 반도체 시트를 이용한 박막 트랜지스터의제조방법, 상기 나노 반도체 시트를 이용한 평판표시장치의 제조방법, 박막 트랜지스터, 및 평판 표시장치
EP1938381A2 (en) * 2005-09-23 2008-07-02 Nanosys, Inc. Methods for nanostructure doping
JP2007123657A (ja) * 2005-10-31 2007-05-17 Nec Corp 半導体装置及びその製造方法
KR20080075528A (ko) * 2005-11-21 2008-08-18 유니버시티 오브 플로리다 리서치 파운데이션, 인크. 상이한 물질들의 상호침투 네트워크들을 형성하기 위한방법 및 그 장치들
EP1952467B9 (en) * 2005-11-21 2012-03-14 Nanosys, Inc. Nanowire structures comprising carbon
KR100657973B1 (ko) * 2005-12-02 2006-12-14 삼성에스디아이 주식회사 기계적 메모리 소자 및 그 제조방법
US7608877B2 (en) 2005-12-06 2009-10-27 Canon Kabushiki Kaisha Circuit device having capacitor and field effect transistor, and display apparatus therewith
US7906803B2 (en) * 2005-12-06 2011-03-15 Canon Kabushiki Kaisha Nano-wire capacitor and circuit device therewith
KR100661602B1 (ko) * 2005-12-09 2006-12-26 삼성전기주식회사 수직 구조 질화갈륨계 ｌｅｄ 소자의 제조방법
US7741197B1 (en) 2005-12-29 2010-06-22 Nanosys, Inc. Systems and methods for harvesting and reducing contamination in nanowires
WO2007136412A2 (en) 2005-12-29 2007-11-29 Nanosys, Inc. Methods for oriented growth of nanowires on patterned substrates
US20070200187A1 (en) * 2006-02-28 2007-08-30 Amlani Islamshah S Nanowire device and method of making
EP1991723A2 (en) * 2006-03-03 2008-11-19 The Board Of Trustees Of The University Of Illinois Methods of making spatially aligned nanotubes and nanotube arrays
JP4574634B2 (ja) * 2006-04-03 2010-11-04 キヤノン株式会社 シリコンワイヤを含み構成される物品の製造方法
KR101533455B1 (ko) * 2006-04-06 2015-07-03 삼성전자주식회사 나노와이어 복합체 및 그의 제조방법
US8337979B2 (en) 2006-05-19 2012-12-25 Massachusetts Institute Of Technology Nanostructure-reinforced composite articles and methods
EP2441729B1 (en) 2006-05-19 2017-04-05 Massachusetts Institute Of Technology Method of forming a composite article
US7741647B2 (en) * 2006-05-22 2010-06-22 Hewlett-Packard Development Company Utilizing nanowire for different applications
US9102521B2 (en) * 2006-06-12 2015-08-11 President And Fellows Of Harvard College Nanosensors and related technologies
GB0617460D0 (en) * 2006-09-05 2006-10-18 Airbus Uk Ltd Method of manufacturing composite material
US8058640B2 (en) 2006-09-11 2011-11-15 President And Fellows Of Harvard College Branched nanoscale wires
KR20090075819A (ko) * 2006-09-19 2009-07-09 큐나노 에이비 나노스케일 전계 효과 트랜지스터의 조립체
GB2442768A (en) * 2006-10-11 2008-04-16 Sharp Kk A method of encapsulating low dimensional structures
US8018568B2 (en) * 2006-10-12 2011-09-13 Cambrios Technologies Corporation Nanowire-based transparent conductors and applications thereof
CN101589473B (zh) * 2006-10-12 2011-10-05 凯博瑞奥斯技术公司 基于纳米线的透明导体及其应用
KR100792036B1 (ko) * 2006-10-17 2008-01-04 한양대학교 산학협력단 유기 박막 트랜지스터 및 그 제조 방법
EP2086872A2 (en) * 2006-10-17 2009-08-12 Purdue Research Foundation Electrothermal interface material enhancer
KR100836131B1 (ko) * 2006-10-19 2008-06-09 삼성전기주식회사 나노와이어를 이용한 커패시터 및 그 제조방법
US7968474B2 (en) 2006-11-09 2011-06-28 Nanosys, Inc. Methods for nanowire alignment and deposition
WO2008127314A1 (en) 2006-11-22 2008-10-23 President And Fellows Of Harvard College High-sensitivity nanoscale wire sensors
US7847341B2 (en) 2006-12-20 2010-12-07 Nanosys, Inc. Electron blocking layers for electronic devices
US8686490B2 (en) * 2006-12-20 2014-04-01 Sandisk Corporation Electron blocking layers for electronic devices
US20080150009A1 (en) * 2006-12-20 2008-06-26 Nanosys, Inc. Electron Blocking Layers for Electronic Devices
US20080150004A1 (en) * 2006-12-20 2008-06-26 Nanosys, Inc. Electron Blocking Layers for Electronic Devices
US20080150003A1 (en) * 2006-12-20 2008-06-26 Jian Chen Electron blocking layers for electronic devices
US20080157354A1 (en) * 2007-01-03 2008-07-03 Sharp Laboratories Of America, Inc. Multiple stacked nanostructure arrays and methods for making the same
KR101519038B1 (ko) 2007-01-17 2015-05-11 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 프린팅­기반 어셈블리에 의해 제조되는 광학 시스템
EP2115782A1 (en) * 2007-01-30 2009-11-11 Solasta, Inc. Photovoltaic cell and method of making thereof
US20080202581A1 (en) * 2007-02-12 2008-08-28 Solasta, Inc. Photovoltaic cell with reduced hot-carrier cooling
US8628746B2 (en) * 2007-04-12 2014-01-14 Raytheon Company System and method for dispersing nanostructures in a composite material
TWI556456B (zh) 2007-04-20 2016-11-01 坎畢歐科技公司 複合透明導體及形成其之方法
US7892610B2 (en) * 2007-05-07 2011-02-22 Nanosys, Inc. Method and system for printing aligned nanowires and other electrical devices
JP5216237B2 (ja) * 2007-05-16 2013-06-19 パナソニック株式会社 半導体素子及びその製造方法
US8097922B1 (en) * 2007-05-29 2012-01-17 The Regents Of The University Of California Nanometer-scale transistor architecture providing enhanced carrier mobility
US8367506B2 (en) 2007-06-04 2013-02-05 Micron Technology, Inc. High-k dielectrics with gold nano-particles
US20110023955A1 (en) * 2007-06-26 2011-02-03 Fonash Stephen J Lateral collection photovoltaics
JP2010532574A (ja) * 2007-07-03 2010-10-07 ソーラスタ インコーポレイテッド 分散型コアックス光起電装置
KR100904588B1 (ko) * 2007-07-05 2009-06-25 삼성전자주식회사 코어/쉘 형태의 나노와이어를 제조하는 방법, 그에 의해제조된 나노와이어 및 이를 포함하는 나노와이어 소자
DE102007031600B4 (de) * 2007-07-06 2015-10-15 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh Array aus vertikalen UV-Leuchtemitterdioden und Verfahren zu seiner Herstellung
KR100857542B1 (ko) 2007-07-19 2008-09-08 삼성전자주식회사 탄소 나노튜브 발광소자 및 그 제조방법
EP2019313B1 (en) * 2007-07-25 2015-09-16 Stichting IMEC Nederland Sensor device comprising elongated nanostructures, its use and manufacturing method
US8491292B1 (en) 2007-07-31 2013-07-23 Raytheon Company Aligning nanomaterial in a nanomaterial composite
US8636972B1 (en) 2007-07-31 2014-01-28 Raytheon Company Making a nanomaterial composite
KR101631043B1 (ko) 2007-08-21 2016-06-24 더 리전트 오브 더 유니버시티 오브 캘리포니아 고성능 열전 속성을 갖는 나노구조체
JP2009057518A (ja) * 2007-09-03 2009-03-19 Institute Of Physical & Chemical Research 異方性フィルムおよび異方性フィルムの製造方法
KR100945251B1 (ko) * 2007-09-28 2010-03-03 한국과학기술원 형태 조절이 가능한 단결정 나노구조체 제작방법 및 단결정나노구조체 제작장치
US8919428B2 (en) * 2007-10-17 2014-12-30 Purdue Research Foundation Methods for attaching carbon nanotubes to a carbon substrate
KR101272012B1 (ko) * 2007-11-28 2013-06-07 삼성전자주식회사 반도체 장치의 제조 방법
KR101345432B1 (ko) * 2007-12-13 2013-12-27 성균관대학교산학협력단 무촉매 단결정 실리콘 나노와이어의 제조방법, 그에 의해형성된 나노와이어 및 이를 포함하는 나노소자
US8273983B2 (en) * 2007-12-21 2012-09-25 Hewlett-Packard Development Company, L.P. Photonic device and method of making same using nanowires
US8603246B2 (en) * 2008-01-30 2013-12-10 Palo Alto Research Center Incorporated Growth reactor systems and methods for low-temperature synthesis of nanowires
US8283556B2 (en) 2008-01-30 2012-10-09 Hewlett-Packard Development Company, L.P. Nanowire-based device and array with coaxial electrodes
EP2257974A1 (en) * 2008-02-26 2010-12-08 Nxp B.V. Method for manufacturing semiconductor device and semiconductor device
CN103872002B (zh) 2008-03-05 2017-03-01 伊利诺伊大学评议会 可拉伸和可折叠的电子器件
FR2929267B1 (fr) * 2008-03-27 2011-01-14 Commissariat Energie Atomique Procede de preparation de zno ou de znmgo dope de type p
GB2459251A (en) * 2008-04-01 2009-10-21 Sharp Kk Semiconductor nanowire devices
GB2458906A (en) * 2008-04-01 2009-10-07 Sharp Kk Nanowire manufacture
GB2458907A (en) * 2008-04-01 2009-10-07 Sharp Kk Device interconnects
JP2011523200A (ja) * 2008-04-15 2011-08-04 クナノ アーベー ナノワイヤラップゲートデバイス
US20110062416A1 (en) * 2008-05-05 2011-03-17 Shih-Yuan Wang Nanowire-based photodiode
JP5347340B2 (ja) * 2008-06-04 2013-11-20 株式会社豊田中央研究所 共鳴トンネルダイオードの製法
WO2010005707A1 (en) 2008-06-16 2010-01-14 The Board Of Trustees Of The University Of Illinois Medium scale carbon nanotube thin film integrated circuits on flexible plastic substrates
US7858506B2 (en) * 2008-06-18 2010-12-28 Micron Technology, Inc. Diodes, and methods of forming diodes
WO2010039634A1 (en) * 2008-09-30 2010-04-08 The Regents Of The University Of California Controlled alignment in polymeric solar cells
US8389862B2 (en) 2008-10-07 2013-03-05 Mc10, Inc. Extremely stretchable electronics
US9289132B2 (en) 2008-10-07 2016-03-22 Mc10, Inc. Catheter balloon having stretchable integrated circuitry and sensor array
US8886334B2 (en) 2008-10-07 2014-11-11 Mc10, Inc. Systems, methods, and devices using stretchable or flexible electronics for medical applications
US20100108132A1 (en) * 2008-10-30 2010-05-06 General Electric Company Nano-devices and methods of manufacture thereof
US9494615B2 (en) * 2008-11-24 2016-11-15 Massachusetts Institute Of Technology Method of making and assembling capsulated nanostructures
TWI397548B (zh) * 2008-12-19 2013-06-01 鴻海精密工業股份有限公司 含有奈米線的複合粒子及其製備方法
US20110220171A1 (en) * 2009-01-30 2011-09-15 Mathai Sagi V Photovoltaic Structure and Solar Cell and Method of Fabrication Employing Hidden Electrode
US8541058B2 (en) * 2009-03-06 2013-09-24 Timothy S. Fisher Palladium thiolate bonding of carbon nanotubes
CN102484147B (zh) * 2009-04-15 2015-11-25 索尔伏打电流公司 具有纳米线的多结光生伏打电池
WO2010120297A1 (en) * 2009-04-15 2010-10-21 Hewlett-Packard Development Company, L.P Nanowire sensor having a nanowire and electrically conductive film
TWI592996B (zh) 2009-05-12 2017-07-21 美國伊利諾大學理事會 用於可變形及半透明顯示器之超薄微刻度無機發光二極體之印刷總成
ES2910086T3 (es) 2009-05-19 2022-05-11 Oned Mat Inc Materiales nanoestructurados para aplicaciones de batería
JP2012528020A (ja) 2009-05-26 2012-11-12 ナノシス・インク． ナノワイヤおよび他のデバイスの電場沈着のための方法およびシステム
US8623288B1 (en) 2009-06-29 2014-01-07 Nanosys, Inc. Apparatus and methods for high density nanowire growth
US8062568B2 (en) 2009-08-27 2011-11-22 Korea University Research And Business Foundation Nano pattern writer
US20110049473A1 (en) * 2009-08-28 2011-03-03 International Business Machines Corporation Film Wrapped NFET Nanowire
US20120168713A1 (en) * 2009-09-03 2012-07-05 Korea Research Institute Of Standards And Science Method for manufacturing a silicon nanowire array using a porous metal film
US9297796B2 (en) 2009-09-24 2016-03-29 President And Fellows Of Harvard College Bent nanowires and related probing of species
WO2011075197A2 (en) * 2009-09-25 2011-06-23 The Trustees Of The University Of Pennsylvania System and method for the relaxation of stress in phase change memory devices
US9723122B2 (en) 2009-10-01 2017-08-01 Mc10, Inc. Protective cases with integrated electronics
KR101734282B1 (ko) * 2009-10-01 2017-05-12 경기대학교 산학협력단 면 광원 소자
KR20110041401A (ko) * 2009-10-15 2011-04-21 샤프 가부시키가이샤 발광 장치 및 그 제조 방법
JP4897034B2 (ja) * 2009-12-03 2012-03-14 シャープ株式会社 棒状構造発光素子、発光装置、発光装置の製造方法、バックライト、照明装置および表示装置
KR101178468B1 (ko) * 2009-10-19 2012-09-06 샤프 가부시키가이샤 봉형상 구조 발광 소자, 봉형상 구조 발광 소자의 제조 방법, 백라이트, 조명 장치 및 표시 장치
JP5014477B2 (ja) * 2009-10-19 2012-08-29 シャープ株式会社 棒状構造発光素子の製造方法および表示装置の製造方法
JP5014403B2 (ja) * 2009-11-19 2012-08-29 シャープ株式会社 棒状構造発光素子、発光装置、発光装置の製造方法、バックライト、照明装置および表示装置
US8872214B2 (en) 2009-10-19 2014-10-28 Sharp Kabushiki Kaisha Rod-like light-emitting device, method of manufacturing rod-like light-emitting device, backlight, illuminating device, and display device
JP5094824B2 (ja) * 2009-10-19 2012-12-12 シャープ株式会社 棒状構造発光素子、バックライト、照明装置および表示装置
JP2011119617A (ja) * 2009-12-07 2011-06-16 Sharp Corp 棒状構造発光素子の製造方法
US10918298B2 (en) 2009-12-16 2021-02-16 The Board Of Trustees Of The University Of Illinois High-speed, high-resolution electrophysiology in-vivo using conformal electronics
US8666471B2 (en) 2010-03-17 2014-03-04 The Board Of Trustees Of The University Of Illinois Implantable biomedical devices on bioresorbable substrates
US10441185B2 (en) 2009-12-16 2019-10-15 The Board Of Trustees Of The University Of Illinois Flexible and stretchable electronic systems for epidermal electronics
US9936574B2 (en) 2009-12-16 2018-04-03 The Board Of Trustees Of The University Of Illinois Waterproof stretchable optoelectronics
JP2013514193A (ja) * 2009-12-17 2013-04-25 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング ナノ粒子の堆積
KR101732178B1 (ko) * 2010-01-15 2017-05-04 삼성전자주식회사 나노 섬유-나노 와이어 복합체 및 그 제조방법
EP2531566B1 (en) * 2010-02-05 2018-09-12 CAM Holding Corporation Photosensitive ink compositions and transparent conductors and method of using the same
KR101701967B1 (ko) * 2010-05-31 2017-02-03 도레이케미칼 주식회사 나노와이어를 포함하는 투명 도전체의 제조방법
US8680510B2 (en) * 2010-06-28 2014-03-25 International Business Machines Corporation Method of forming compound semiconductor
US9000660B2 (en) * 2010-11-15 2015-04-07 Laurence H. Cooke Uses of hydrocarbon nanorings
US9240328B2 (en) 2010-11-19 2016-01-19 Alphabet Energy, Inc. Arrays of long nanostructures in semiconductor materials and methods thereof
US8736011B2 (en) 2010-12-03 2014-05-27 Alphabet Energy, Inc. Low thermal conductivity matrices with embedded nanostructures and methods thereof
US12234368B2 (en) 2010-12-14 2025-02-25 Molecular Rebar Design, Llc Dispersions comprising high surface area nanotubes and discrete carbon nanotubes
US12291058B2 (en) 2010-12-14 2025-05-06 Molecular Rebar Design, Llc. Dispersions for additive manufacturing comprising discrete carbon nanotubes
TWI441305B (zh) 2010-12-21 2014-06-11 財團法人工業技術研究院 半導體裝置
US9442285B2 (en) 2011-01-14 2016-09-13 The Board Of Trustees Of The University Of Illinois Optical component array having adjustable curvature
WO2012158709A1 (en) 2011-05-16 2012-11-22 The Board Of Trustees Of The University Of Illinois Thermally managed led arrays assembled by printing
US9159635B2 (en) 2011-05-27 2015-10-13 Mc10, Inc. Flexible electronic structure
US8934965B2 (en) 2011-06-03 2015-01-13 The Board Of Trustees Of The University Of Illinois Conformable actively multiplexed high-density surface electrode array for brain interfacing
CN108389893A (zh) 2011-12-01 2018-08-10 伊利诺伊大学评议会 经设计以经历可编程转变的瞬态器件
US9051175B2 (en) 2012-03-07 2015-06-09 Alphabet Energy, Inc. Bulk nano-ribbon and/or nano-porous structures for thermoelectric devices and methods for making the same
EP2830492B1 (en) 2012-03-30 2021-05-19 The Board of Trustees of the University of Illinois Appendage mountable electronic devices conformable to surfaces and method of making the same
US9257627B2 (en) 2012-07-23 2016-02-09 Alphabet Energy, Inc. Method and structure for thermoelectric unicouple assembly
US20150214261A1 (en) * 2012-08-13 2015-07-30 President And Fellows Of Harvard College Multispectral imaging using silicon nanowires
US9171794B2 (en) 2012-10-09 2015-10-27 Mc10, Inc. Embedding thin chips in polymer
US9082930B1 (en) 2012-10-25 2015-07-14 Alphabet Energy, Inc. Nanostructured thermolectric elements and methods of making the same
CN103854971B (zh) * 2012-12-04 2016-10-05 中芯国际集成电路制造(上海)有限公司 纳米线的制造方法、纳米线场效应晶体管的制造方法
KR102203599B1 (ko) 2013-03-14 2021-01-14 나노시스, 인크. 무용매 양자점 교환 방법
US20140374715A1 (en) * 2013-06-21 2014-12-25 Postech Academy – Industry Foundation Method for fabricating organic electronic device having separate patterns using organic fiber, and organic electronic device having the organic fiber
EP3017483B1 (en) * 2013-07-03 2020-05-06 Lumileds Holding B.V. Led with stress-buffer layer under metallization layer
US9691849B2 (en) 2014-04-10 2017-06-27 Alphabet Energy, Inc. Ultra-long silicon nanostructures, and methods of forming and transferring the same
DE102014107167B4 (de) * 2014-05-21 2022-04-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines Halbleiterbauelements mit einer Strukturschicht mit einer Mehrzahl von dreidimensionalen Strukturelementen und strahlungsemittierendes Halbleiterbauelement mit einer Strukturschicht mit einer Mehrzahl von dreidimensionalen Strukturelementen
DE102014018878B8 (de) * 2014-12-17 2017-11-16 Technische Universität Darmstadt Federsensorelement
CN105870183B (zh) * 2015-01-19 2019-07-02 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
WO2016196673A1 (en) 2015-06-01 2016-12-08 The Board Of Trustees Of The University Of Illinois Alternative approach to uv sensing
CN107851208B (zh) 2015-06-01 2021-09-10 伊利诺伊大学评议会 具有无线供电和近场通信能力的小型化电子系统
US10925543B2 (en) 2015-11-11 2021-02-23 The Board Of Trustees Of The University Of Illinois Bioresorbable silicon electronics for transient implants
FR3046243B1 (fr) * 2015-12-24 2017-12-22 Commissariat Energie Atomique Capteur nw-fet comportant au moins deux detecteurs distincts a nanofil de semi-conducteur
ES2953299T3 (es) 2016-05-31 2023-11-10 Massachusetts Inst Technology Artículos compuestos que comprenden nanoestructuras alargadas no lineales y métodos asociados
WO2018092123A1 (en) 2016-11-17 2018-05-24 Orbotech Ltd. Hybrid, multi-material 3d printing
CN106825601B (zh) * 2016-12-30 2019-03-29 西安交通大学青岛研究院 一种银纳米线的制备方法
US11257984B2 (en) 2017-06-09 2022-02-22 University Of Massachusetts III-nitride down-conversion nanomaterial for white LEDs
WO2019036186A1 (en) * 2017-08-17 2019-02-21 Lintec Of America, Inc. SELECTIVE INFILTRATION OF NANOFIBRE YARNS
EP3681942B1 (en) 2017-09-15 2024-10-02 Massachusetts Institute of Technology Low-defect fabrication of composite materials
KR102089637B1 (ko) * 2017-09-26 2020-03-16 동우 화인켐 주식회사 금속 나노 와이어를 포함하는 투명 도전성 접착제 필름 및 그 제조방법
KR102028599B1 (ko) * 2017-10-17 2019-10-04 한국과학기술연구원 3d 프린트 출력물에 기능성 물질층을 전사하는 방법
KR101997670B1 (ko) * 2017-10-17 2019-07-09 한국과학기술연구원 기능성 물질층이 전사된 구조체 형성 방법
US11031657B2 (en) 2017-11-28 2021-06-08 Massachusetts Institute Of Technology Separators comprising elongated nanostructures and associated devices and methods, including devices and methods for energy storage and/or use
FR3074489B1 (fr) * 2017-12-05 2023-04-21 Centre Nat Rech Scient Plateforme de nanostructures pour l’interfacage cellulaire et procede de fabrication correspondant
FR3079345B1 (fr) 2018-03-26 2020-02-21 Soitec Procede de fabrication d'un substrat pour dispositif radiofrequence
US10724163B2 (en) 2018-05-16 2020-07-28 Lintec Of America, Inc. Nanofiber fabric
US12325629B2 (en) * 2018-08-29 2025-06-10 Thales Solutions Asia Pte Ltd Nanostructure transfer method
KR102813580B1 (ko) * 2019-07-02 2025-05-28 삼성디스플레이 주식회사 발광 소자, 이의 제조 방법 및 표시 장치
KR102735548B1 (ko) * 2019-10-28 2024-11-27 프라운호퍼-게젤샤프트 츄어 푀르더룽 데어 안게반텐 포르슝에.파우. 편광 방출을 갖는 발광 다이오드 제조 방법
RU197477U1 (ru) * 2019-12-09 2020-04-30 Федеральное государственное бюджетное учреждение высшего образования и науки "Санкт-Петербургский национальный исследовательский Академический университет имени Ж.И. Алферова Российской академии наук" (СПБАУ РАН им. Ж.И. Алферова) Функциональный трехмерный компонент оптоэлектронного прибора
CN113782674B (zh) * 2020-06-09 2024-02-27 北京元芯碳基集成电路研究院 碳纳米管射频器件、制造方法及集成电路系统
KR20210156624A (ko) * 2020-06-18 2021-12-27 삼성전자주식회사 나노 막대 발광 소자 및 그 제조 방법
IL307228A (en) 2021-03-25 2023-11-01 Mechnano Llc Dispersions and manufacturing technologies for additive manufacturing involving individual carbon nanotubes
CN114540786B (zh) * 2022-02-17 2022-12-30 山西大学 一种抗反射复合材料及其制备方法和应用
CN114736620B (zh) * 2022-06-15 2022-11-15 深圳市卓汉材料技术有限公司 屏蔽胶带、其制备方法及屏蔽结构
TWI814578B (zh) * 2022-09-13 2023-09-01 國立中山大學 薄膜電晶體及其製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6031711A (en) * 1996-05-15 2000-02-29 Hyperion Catalysis International, Inc. Graphitic nanofibers in electrochemical capacitors
US6297063B1 (en) * 1999-10-25 2001-10-02 Agere Systems Guardian Corp. In-situ nano-interconnected circuit devices and method for making the same
US20010041160A1 (en) 1998-09-18 2001-11-15 Margrave John L. Chemical derivatization of single-wall carbon nanotubes to facilitate solvation thereof; and use of derivatized nanotubes to form catalyst-containing seed materials for use in making carbon fibers
US6383923B1 (en) * 1999-10-05 2002-05-07 Agere Systems Guardian Corp. Article comprising vertically nano-interconnected circuit devices and method for making the same

Family Cites Families (83)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55125681A (en) 1979-03-22 1980-09-27 Sanyo Electric Co Ltd Manufacture of photovoltaic device
US4625071A (en) 1984-11-05 1986-11-25 Chronar Corp. Particulate semiconductors and devices
US4752455A (en) * 1986-05-27 1988-06-21 Kms Fusion, Inc. Pulsed laser microfabrication
US5401587A (en) 1990-03-27 1995-03-28 Kabushiki Kaisha Toyota Chuo Kenkyusho Anisotropic nanophase composite material and method of producing same
JPH0815097B2 (ja) 1990-04-17 1996-02-14 エコール・ポリテクニツク・フエデラール・ドウ・ローザンヌ 光電池
JP2866730B2 (ja) * 1990-11-14 1999-03-08 日本電信電話株式会社 半導体回路の形成方法
JP3125332B2 (ja) 1991-06-21 2001-01-15 ソニー株式会社 量子ドットトンネル素子とそれを用いた情報処理装置及び情報処理方法
WO1993010564A1 (en) 1991-11-22 1993-05-27 The Regents Of The University Of California Semiconductor nanocrystals covalently bound to solid inorganic surfaces using self-assembled monolayers
US5505928A (en) 1991-11-22 1996-04-09 The Regents Of University Of California Preparation of III-V semiconductor nanocrystals
US5262357A (en) 1991-11-22 1993-11-16 The Regents Of The University Of California Low temperature thin films formed from nanocrystal precursors
DE4207659A1 (de) 1992-03-11 1993-09-16 Abb Patent Gmbh Verfahren zur herstellung einer photoelektrochemischen zelle sowie eine demgemaess hergestellte zelle
JPH05308146A (ja) 1992-05-01 1993-11-19 Ricoh Co Ltd 有機光起電力素子
IL102374A0 (en) 1992-06-30 1993-01-14 Yeda Res & Dev Nanocrystalline cell
US5331183A (en) 1992-08-17 1994-07-19 The Regents Of The University Of California Conjugated polymer - acceptor heterojunctions; diodes, photodiodes, and photovoltaic cells
GB9217811D0 (en) 1992-08-21 1992-10-07 Graetzel Michael Organic compounds
US5260957A (en) 1992-10-29 1993-11-09 The Charles Stark Draper Laboratory, Inc. Quantum dot Laser
US5293050A (en) 1993-03-25 1994-03-08 International Business Machines Corporation Semiconductor quantum dot light emitting/detecting devices
US6048616A (en) 1993-04-21 2000-04-11 Philips Electronics N.A. Corp. Encapsulated quantum sized doped semiconductor particles and method of manufacturing same
US5504323A (en) 1993-12-07 1996-04-02 The Regents Of The University Of California Dual function conducting polymer diodes
US5422489A (en) 1994-01-24 1995-06-06 Bhargava; Rameshwar N. Light emitting device
US5434878A (en) 1994-03-18 1995-07-18 Brown University Research Foundation Optical gain medium having doped nanocrystals of semiconductors and also optical scatterers
US5537000A (en) 1994-04-29 1996-07-16 The Regents, University Of California Electroluminescent devices formed using semiconductor nanocrystals as an electron transport media and method of making such electroluminescent devices
US5789592A (en) 1994-05-02 1998-08-04 Ecole Polytechnique Federale De Lausanne Phosphonated polypyridyl compounds and their complexes
US5523555A (en) 1994-09-14 1996-06-04 Cambridge Display Technology Photodetector device having a semiconductive conjugated polymer
JPH10506502A (ja) 1994-09-29 1998-06-23 ブリティッシュ・テレコミュニケーションズ・パブリック・リミテッド・カンパニー 量子ドットを備えた光ファイバ
GB9423692D0 (en) 1994-11-23 1995-01-11 Philips Electronics Uk Ltd A photoresponsive device
GB2296815B (en) 1994-12-09 1999-03-17 Cambridge Display Tech Ltd Photoresponsive materials
US5585640A (en) 1995-01-11 1996-12-17 Huston; Alan L. Glass matrix doped with activated luminescent nanocrystalline particles
AU5386296A (en) 1995-04-05 1996-10-23 Uniax Corporation Smart polymer image processor
US5690807A (en) 1995-08-03 1997-11-25 Massachusetts Institute Of Technology Method for producing semiconductor particles
US5897945A (en) 1996-02-26 1999-04-27 President And Fellows Of Harvard College Metal oxide nanorods
US6036774A (en) 1996-02-26 2000-03-14 President And Fellows Of Harvard College Method of producing metal oxide nanorods
EP0792688A1 (en) 1996-03-01 1997-09-03 Dow Corning Corporation Nanoparticles of silicon oxide alloys
JP4619462B2 (ja) * 1996-08-27 2011-01-26 セイコーエプソン株式会社 薄膜素子の転写方法
US5997832A (en) 1997-03-07 1999-12-07 President And Fellows Of Harvard College Preparation of carbide nanorods
US6413489B1 (en) 1997-04-15 2002-07-02 Massachusetts Institute Of Technology Synthesis of nanometer-sized particles by reverse micelle mediated techniques
US6231744B1 (en) * 1997-04-24 2001-05-15 Massachusetts Institute Of Technology Process for fabricating an array of nanowires
EP0983282B1 (en) 1997-05-07 2003-11-12 Ecole Polytechnique Federale De Lausanne Metal complex photosensitizer and photovoltaic cell
US6013871A (en) 1997-07-02 2000-01-11 Curtin; Lawrence F. Method of preparing a photovoltaic device
US6322901B1 (en) 1997-11-13 2001-11-27 Massachusetts Institute Of Technology Highly luminescent color-selective nano-crystalline materials
US5990479A (en) 1997-11-25 1999-11-23 Regents Of The University Of California Organo Luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes
US6207392B1 (en) 1997-11-25 2001-03-27 The Regents Of The University Of California Semiconductor nanocrystal probes for biological applications and process for making and using such probes
US20020172802A1 (en) * 1998-08-20 2002-11-21 Weder Donald E. Decorative creped shredded material
US6501091B1 (en) 1998-04-01 2002-12-31 Massachusetts Institute Of Technology Quantum dot white and colored light emitting diodes
US6277740B1 (en) 1998-08-14 2001-08-21 Avery N. Goldstein Integrated circuit trenched features and method of producing same
JP3569135B2 (ja) * 1998-09-09 2004-09-22 株式会社東芝 電界放出陰極の製造方法
EP1129496A2 (en) 1998-10-09 2001-09-05 The Trustees of Columbia University in the City of New York Solid-state photoelectric device
US6855202B2 (en) 2001-11-30 2005-02-15 The Regents Of The University Of California Shaped nanocrystal particles and methods for making the same
WO2001003208A1 (en) 1999-07-02 2001-01-11 President And Fellows Of Harvard College Nanoscopic wire-based devices, arrays, and methods of their manufacture
US6649824B1 (en) 1999-09-22 2003-11-18 Canon Kabushiki Kaisha Photoelectric conversion device and method of production thereof
US6741019B1 (en) * 1999-10-18 2004-05-25 Agere Systems, Inc. Article comprising aligned nanowires
US6440213B1 (en) 1999-10-28 2002-08-27 The Regents Of The University Of California Process for making surfactant capped nanocrystals
US6306736B1 (en) 2000-02-04 2001-10-23 The Regents Of The University Of California Process for forming shaped group III-V semiconductor nanocrystals, and product formed using process
US6225198B1 (en) 2000-02-04 2001-05-01 The Regents Of The University Of California Process for forming shaped group II-VI semiconductor nanocrystals, and product formed using process
US6819692B2 (en) 2000-03-14 2004-11-16 Massachusetts Institute Of Technology Optical amplifiers and lasers
ATE362615T1 (de) 2000-03-20 2007-06-15 Massachusetts Inst Technology Anorganische teilchenkonjugate
AU2001249459A1 (en) 2000-03-24 2001-10-08 The State Of Oregon, Acting By And Through The State Board Of Higher Education On Behalf Of The University Of Oregon Scaffold-organized clusters and electronic devices made using such clusters
JP4537528B2 (ja) 2000-03-29 2010-09-01 株式会社東芝 光記録媒体
US6919119B2 (en) 2000-05-30 2005-07-19 The Penn State Research Foundation Electronic and opto-electronic devices fabricated from nanostructured high surface to volume ratio thin films
EP1180774B1 (en) 2000-08-15 2006-10-11 Fuji Photo Film Co., Ltd. Photoelectric conversion device and method for producing same
US7301199B2 (en) 2000-08-22 2007-11-27 President And Fellows Of Harvard College Nanoscale wires and related devices
CN101887935B (zh) 2000-08-22 2013-09-11 哈佛学院董事会 掺杂的拉长半导体,其生长,包含这类半导体的器件及其制造
US6611640B2 (en) 2000-10-03 2003-08-26 Evident Technologies Optical dispersion compensator
JP2002132016A (ja) * 2000-10-23 2002-05-09 Ricoh Co Ltd 接触型帯電器、その作製方法およびそれを有する画像形成装置
JP2002141633A (ja) * 2000-10-25 2002-05-17 Lucent Technol Inc 垂直にナノ相互接続された回路デバイスからなる製品及びその製造方法
US6576291B2 (en) 2000-12-08 2003-06-10 Massachusetts Institute Of Technology Preparation of nanocrystallites
KR20030055346A (ko) 2000-12-11 2003-07-02 프레지던트 앤드 펠로우즈 오브 하버드 칼리지 나노센서
TW552592B (en) 2001-01-23 2003-09-11 Quantum Polymer Technologies I Conductive polymer materials and methods for their manufacture and use
US20020110180A1 (en) 2001-02-09 2002-08-15 Barney Alfred A. Temperature-sensing composition
EP1374309A1 (en) * 2001-03-30 2004-01-02 The Regents Of The University Of California Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
JP2003012313A (ja) * 2001-06-26 2003-01-15 Kansai Tlo Kk 保護カバー付カーボンナノチューブ
US6794265B2 (en) 2001-08-02 2004-09-21 Ultradots, Inc. Methods of forming quantum dots of Group IV semiconductor materials
AU2002326920B2 (en) 2001-09-17 2007-09-13 Massachusetts Institute Of Technology Semiconductor nanocrystal composite
US7777303B2 (en) 2002-03-19 2010-08-17 The Regents Of The University Of California Semiconductor-nanocrystal/conjugated polymer thin films
CN1656856B (zh) 2002-03-29 2013-07-17 麻省理工学院 包含半导体纳米晶体的发光器件
US6872645B2 (en) 2002-04-02 2005-03-29 Nanosys, Inc. Methods of positioning and/or orienting nanostructures
US20040026684A1 (en) 2002-04-02 2004-02-12 Nanosys, Inc. Nanowire heterostructures for encoding information
US20040003838A1 (en) 2002-07-05 2004-01-08 Curtin Lawrence F. Nano photovoltaic/solar cells
EP1537445B1 (en) 2002-09-05 2012-08-01 Nanosys, Inc. Nanocomposites
WO2004023527A2 (en) 2002-09-05 2004-03-18 Nanosys, Inc. Nanostructure and nanocomposite based compositions and photovoltaic devices
CA2499965C (en) 2002-09-30 2013-03-19 Nanosys, Inc. Large-area nanoenabled macroelectronic substrates and uses therefor
US7051945B2 (en) 2002-09-30 2006-05-30 Nanosys, Inc Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites
JP2007501525A (ja) * 2003-08-04 2007-01-25 ナノシス・インコーポレイテッド ナノワイヤ複合体およびこれらに由来する電子基板を作製するためのシステムおよび方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6031711A (en) * 1996-05-15 2000-02-29 Hyperion Catalysis International, Inc. Graphitic nanofibers in electrochemical capacitors
US20010041160A1 (en) 1998-09-18 2001-11-15 Margrave John L. Chemical derivatization of single-wall carbon nanotubes to facilitate solvation thereof; and use of derivatized nanotubes to form catalyst-containing seed materials for use in making carbon fibers
US6383923B1 (en) * 1999-10-05 2002-05-07 Agere Systems Guardian Corp. Article comprising vertically nano-interconnected circuit devices and method for making the same
US6297063B1 (en) * 1999-10-25 2001-10-02 Agere Systems Guardian Corp. In-situ nano-interconnected circuit devices and method for making the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160014219A (ko) * 2014-07-29 2016-02-11 한국세라믹기술원 폴리머 매트릭스 내 금속 나노와이어의 3차원 네트워크를 이용한 촉감센서 및 그 제조방법
KR101635770B1 (ko) 2014-07-29 2016-07-04 한국세라믹기술원 폴리머 매트릭스 내 금속 나노와이어의 3차원 네트워크를 이용한 촉감센서 및 그 제조방법

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