KR101128982B1 - 레저바 캐패시터 및 그를 갖는 반도체 메모리 장치 - Google Patents

레저바 캐패시터 및 그를 갖는 반도체 메모리 장치 Download PDF

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Publication number
KR101128982B1
KR101128982B1 KR1020080117999A KR20080117999A KR101128982B1 KR 101128982 B1 KR101128982 B1 KR 101128982B1 KR 1020080117999 A KR1020080117999 A KR 1020080117999A KR 20080117999 A KR20080117999 A KR 20080117999A KR 101128982 B1 KR101128982 B1 KR 101128982B1
Authority
KR
South Korea
Prior art keywords
capacitor
memory device
semiconductor memory
power supply
line
Prior art date
Application number
KR1020080117999A
Other languages
English (en)
Korean (ko)
Other versions
KR20090101063A (ko
Inventor
박근우
Original Assignee
주식회사 하이닉스반도체
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 하이닉스반도체 filed Critical 주식회사 하이닉스반도체
Priority to US12/346,980 priority Critical patent/US20090236908A1/en
Priority to TW098102092A priority patent/TW200947672A/zh
Priority to DE200910000998 priority patent/DE102009000998A1/de
Priority to JP2009055988A priority patent/JP2009231831A/ja
Priority to CN200910128457XA priority patent/CN101540194B/zh
Priority to CN2011102810635A priority patent/CN102354523A/zh
Publication of KR20090101063A publication Critical patent/KR20090101063A/ko
Application granted granted Critical
Publication of KR101128982B1 publication Critical patent/KR101128982B1/ko

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
KR1020080117999A 2008-03-21 2008-11-26 레저바 캐패시터 및 그를 갖는 반도체 메모리 장치 KR101128982B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
US12/346,980 US20090236908A1 (en) 2008-03-21 2008-12-31 Reservoir capacitor and semiconductor memory device including the same
TW098102092A TW200947672A (en) 2008-03-21 2009-01-20 Reservoir capacitor and semiconductor memory device including the same
DE200910000998 DE102009000998A1 (de) 2008-03-21 2009-02-19 Ladekondensator und Halbleiterspeichervorrichtung mit einem Ladekondensator
JP2009055988A JP2009231831A (ja) 2008-03-21 2009-03-10 蓄積キャパシタ及びそれを備える半導体メモリ装置
CN200910128457XA CN101540194B (zh) 2008-03-21 2009-03-19 存储电容器及包括存储电容器的半导体存储器件
CN2011102810635A CN102354523A (zh) 2008-03-21 2009-03-19 存储电容器

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020080026342 2008-03-21
KR20080026342 2008-03-21

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020110081233A Division KR20110103374A (ko) 2008-03-21 2011-08-16 레저바 캐패시터 및 그를 갖는 반도체 메모리 장치

Publications (2)

Publication Number Publication Date
KR20090101063A KR20090101063A (ko) 2009-09-24
KR101128982B1 true KR101128982B1 (ko) 2012-03-23

Family

ID=41123333

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020080117999A KR101128982B1 (ko) 2008-03-21 2008-11-26 레저바 캐패시터 및 그를 갖는 반도체 메모리 장치
KR1020110081233A KR20110103374A (ko) 2008-03-21 2011-08-16 레저바 캐패시터 및 그를 갖는 반도체 메모리 장치

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020110081233A KR20110103374A (ko) 2008-03-21 2011-08-16 레저바 캐패시터 및 그를 갖는 반도체 메모리 장치

Country Status (3)

Country Link
KR (2) KR101128982B1 (zh)
CN (2) CN101540194B (zh)
TW (1) TW200947672A (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106575575B (zh) * 2014-06-09 2018-12-28 沙特基础全球技术有限公司 使用脉冲电磁辐射来处理薄膜有机铁电材料
CN113130502B (zh) * 2019-09-03 2022-11-22 长江存储科技有限责任公司 利用虚设存储块作为池电容器的非易失性存储器件

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR900019016A (ko) * 1989-05-10 1990-12-22 김광호 디램셀의 제조방법
KR20020002883A (ko) * 2000-06-30 2002-01-10 박종섭 반도체 메모리 소자의 레저봐 커패시턴스 조절 장치

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR930007194B1 (ko) * 1990-08-14 1993-07-31 삼성전자 주식회사 반도체 장치 및 그 제조방법
JP3085280B2 (ja) * 1998-05-15 2000-09-04 日本電気株式会社 多値ｄｒａｍ半導体装置
CN2368148Y (zh) * 1999-04-01 2000-03-08 石家庄开发区高达科技开发有限公司 超大容量电容器
EP1641099A1 (en) * 2004-09-24 2006-03-29 Conception et Développement Michelin S.A. Detachable charge control circuit for balancing the voltage of supercapacitors connected in series

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR900019016A (ko) * 1989-05-10 1990-12-22 김광호 디램셀의 제조방법
KR20020002883A (ko) * 2000-06-30 2002-01-10 박종섭 반도체 메모리 소자의 레저봐 커패시턴스 조절 장치

Also Published As

Publication number Publication date
KR20090101063A (ko) 2009-09-24
CN102354523A (zh) 2012-02-15
KR20110103374A (ko) 2011-09-20
CN101540194A (zh) 2009-09-23
CN101540194B (zh) 2012-12-12
TW200947672A (en) 2009-11-16

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