KR101105568B1 - 주변 노광 장치, 도포 현상 장치 및 주변 노광 방법 - Google Patents

주변 노광 장치, 도포 현상 장치 및 주변 노광 방법 Download PDF

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Publication number
KR101105568B1
KR101105568B1 KR1020060041108A KR20060041108A KR101105568B1 KR 101105568 B1 KR101105568 B1 KR 101105568B1 KR 1020060041108 A KR1020060041108 A KR 1020060041108A KR 20060041108 A KR20060041108 A KR 20060041108A KR 101105568 B1 KR101105568 B1 KR 101105568B1
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South Korea
Prior art keywords
path forming
optical path
forming member
light
substrate
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Expired - Lifetime
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KR1020060041108A
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Korean (ko)
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KR20060116167A (ko
Inventor
야스하루 이와시타
이치로 시모무라
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도쿄엘렉트론가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2026—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2026—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction
    • G03F7/2028—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction of an edge bead on wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020060041108A 2005-05-09 2006-05-08 주변 노광 장치, 도포 현상 장치 및 주변 노광 방법 Expired - Lifetime KR101105568B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2005-00136575 2005-05-09
JP2005136575A JP4642543B2 (ja) 2005-05-09 2005-05-09 周縁露光装置、塗布、現像装置及び周縁露光方法

Publications (2)

Publication Number Publication Date
KR20060116167A KR20060116167A (ko) 2006-11-14
KR101105568B1 true KR101105568B1 (ko) 2012-01-17

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Country Status (7)

Country Link
US (1) US7573054B2 (https=)
EP (1) EP1722402B1 (https=)
JP (1) JP4642543B2 (https=)
KR (1) KR101105568B1 (https=)
CN (1) CN100465795C (https=)
DE (1) DE602006015126D1 (https=)
TW (1) TW200710583A (https=)

Cited By (1)

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KR102951220B1 (ko) * 2023-05-19 2026-04-10 세메스 주식회사 기판 처리 장치 및 기판 처리 방법

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KR100733137B1 (ko) * 2006-06-14 2007-06-28 삼성전자주식회사 웨이퍼 에지 노광 장치
US7659965B2 (en) * 2006-10-06 2010-02-09 Wafertech, Llc High throughput wafer stage design for optical lithography exposure apparatus
CN101216679B (zh) * 2007-12-28 2011-03-30 上海微电子装备有限公司 一种边缘曝光装置
US7901854B2 (en) * 2009-05-08 2011-03-08 Taiwan Semiconductor Manufacturing Co., Ltd. Wafer edge exposure unit
US8625076B2 (en) * 2010-02-09 2014-01-07 Taiwan Semiconductor Manufacturing Co., Ltd. Wafer edge exposure module
JP5327135B2 (ja) * 2010-05-11 2013-10-30 東京エレクトロン株式会社 周縁露光装置及び周縁露光方法
CN103034062B (zh) * 2011-09-29 2014-11-26 中芯国际集成电路制造(北京)有限公司 用于晶片边缘曝光的方法、光学模块和自动聚焦系统
US9196515B2 (en) 2012-03-26 2015-11-24 Taiwan Semiconductor Manufacturing Co., Ltd. Litho cluster and modulization to enhance productivity
US8903532B2 (en) * 2012-03-26 2014-12-02 Taiwan Semiconductor Manufacturing Co., Ltd. Litho cluster and modulization to enhance productivity
JP5873907B2 (ja) * 2013-09-03 2016-03-01 キヤノン・コンポーネンツ株式会社 照明装置、イメージセンサユニット、画像読取装置および画像形成装置
US9287151B2 (en) * 2014-01-10 2016-03-15 Taiwan Semiconductor Manufacturing Co., Ltd Systems and method for transferring a semiconductor substrate
US9891529B2 (en) * 2014-03-28 2018-02-13 Taiwan Semiconductor Manufacturing Co., Ltd Light transmission device and method for semiconductor manufacturing process
JP6661270B2 (ja) * 2015-01-16 2020-03-11 キヤノン株式会社 露光装置、露光システム、および物品の製造方法
JP6444909B2 (ja) * 2016-02-22 2018-12-26 東京エレクトロン株式会社 基板処理方法、基板処理装置及びコンピュータ読み取り可能な記録媒体
US10558125B2 (en) * 2016-11-17 2020-02-11 Tokyo Electron Limited Exposure apparatus, exposure apparatus adjustment method and storage medium
US10747121B2 (en) * 2016-12-13 2020-08-18 Tokyo Electron Limited Optical processing apparatus and substrate processing apparatus
JP7124277B2 (ja) * 2016-12-13 2022-08-24 東京エレクトロン株式会社 光処理装置及び基板処理装置
CN108803245B (zh) * 2017-04-28 2020-04-10 上海微电子装备（集团）股份有限公司 硅片处理装置及方法
US10295909B2 (en) 2017-09-26 2019-05-21 Taiwan Semiconductor Manufacturing Co., Ltd. Edge-exposure tool with an ultraviolet (UV) light emitting diode (LED)
JP7312692B2 (ja) * 2019-12-25 2023-07-21 株式会社Ｓｃｒｅｅｎホールディングス エッジ露光装置およびエッジ露光方法
CN111427231A (zh) * 2020-04-09 2020-07-17 深圳市华星光电半导体显示技术有限公司 掩膜板和新型产线
CN112799282A (zh) * 2020-12-30 2021-05-14 六安优云通信技术有限公司 一种电源芯片制造用晶圆光刻显影蚀刻装置及其制备工艺

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JPH10233354A (ja) 1997-02-20 1998-09-02 Ushio Inc 紫外線照射装置
JP2003037059A (ja) * 2001-05-08 2003-02-07 Asml Netherlands Bv 露光方法、デバイス製造方法、およびリソグラフィ投影装置
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JP2003037059A (ja) * 2001-05-08 2003-02-07 Asml Netherlands Bv 露光方法、デバイス製造方法、およびリソグラフィ投影装置
KR20040011792A (ko) * 2002-07-30 2004-02-11 주식회사 실리콘 테크 기판 주변 노광 장치

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Publication number Priority date Publication date Assignee Title
KR102951220B1 (ko) * 2023-05-19 2026-04-10 세메스 주식회사 기판 처리 장치 및 기판 처리 방법

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CN100465795C (zh) 2009-03-04
TWI334061B (https=) 2010-12-01
US20060250594A1 (en) 2006-11-09
US7573054B2 (en) 2009-08-11
EP1722402A2 (en) 2006-11-15
DE602006015126D1 (de) 2010-08-12
EP1722402B1 (en) 2010-06-30
CN1862387A (zh) 2006-11-15
JP2006313862A (ja) 2006-11-16
JP4642543B2 (ja) 2011-03-02
EP1722402A3 (en) 2007-08-01
TW200710583A (en) 2007-03-16
KR20060116167A (ko) 2006-11-14

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