KR101095746B1 - 절연막 및 그의 형성 방법, 및 막 형성용 조성물 - Google Patents

절연막 및 그의 형성 방법, 및 막 형성용 조성물 Download PDF

Info

Publication number
KR101095746B1
KR101095746B1 KR1020067014379A KR20067014379A KR101095746B1 KR 101095746 B1 KR101095746 B1 KR 101095746B1 KR 1020067014379 A KR1020067014379 A KR 1020067014379A KR 20067014379 A KR20067014379 A KR 20067014379A KR 101095746 B1 KR101095746 B1 KR 101095746B1
Authority
KR
South Korea
Prior art keywords
group
insulating film
bis
formula
acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020067014379A
Other languages
English (en)
Korean (ko)
Other versions
KR20060127058A (ko
Inventor
아쯔시 시오따
Original Assignee
제이에스알 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 제이에스알 가부시끼가이샤 filed Critical 제이에스알 가부시끼가이샤
Publication of KR20060127058A publication Critical patent/KR20060127058A/ko
Application granted granted Critical
Publication of KR101095746B1 publication Critical patent/KR101095746B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/662—Laminate layers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/14—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Paints Or Removers (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020067014379A 2003-12-19 2004-12-15 절연막 및 그의 형성 방법, 및 막 형성용 조성물 Expired - Fee Related KR101095746B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003423047A JP4737361B2 (ja) 2003-12-19 2003-12-19 絶縁膜およびその形成方法
JPJP-P-2003-00423047 2003-12-19
PCT/JP2004/018748 WO2005059987A1 (ja) 2003-12-19 2004-12-15 絶縁膜およびその形成方法、ならびに膜形成用組成物

Publications (2)

Publication Number Publication Date
KR20060127058A KR20060127058A (ko) 2006-12-11
KR101095746B1 true KR101095746B1 (ko) 2011-12-21

Family

ID=34697339

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020067014379A Expired - Fee Related KR101095746B1 (ko) 2003-12-19 2004-12-15 절연막 및 그의 형성 방법, 및 막 형성용 조성물

Country Status (6)

Country Link
US (1) US20060210812A1 (https=)
EP (1) EP1696478A4 (https=)
JP (1) JP4737361B2 (https=)
KR (1) KR101095746B1 (https=)
TW (1) TW200531084A (https=)
WO (1) WO2005059987A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101293896B1 (ko) 2008-12-03 2013-08-06 후지쯔 가부시끼가이샤 반도체 장치의 제조 방법

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005068538A1 (ja) * 2004-01-16 2005-07-28 Jsr Corporation ポリマーの製造方法、ポリマー、絶縁膜形成用組成物、絶縁膜の製造方法、および絶縁膜
EP1705208B1 (en) * 2004-01-16 2013-03-20 JSR Corporation Composition for forming insulating film, method for producing same, silica insulating film, and method for forming same
EP1719793A4 (en) * 2004-02-26 2009-05-20 Jsr Corp POLYMER AND MANUFACTURING METHOD THEREFOR, COMPOSITION FOR FORMING AN INSULATING FILM AND PRODUCTION METHOD THEREFOR
EP1746123A4 (en) * 2004-05-11 2012-03-21 Jsr Corp METHOD FOR FORMING A FILM FROM ORGANIC SILICON OXIDE, ORGANIC SILICON OXIDE FILM, WIRE STRUCTURE, SEMICONDUCTOR DEVICE AND COMPOSITION FOR FILMING
JP5110239B2 (ja) 2004-05-11 2012-12-26 Ｊｓｒ株式会社 有機シリカ系膜の形成方法、膜形成用組成物
JP5110238B2 (ja) * 2004-05-11 2012-12-26 Ｊｓｒ株式会社 絶縁膜形成用組成物およびその製造方法、ならびにシリカ系絶縁膜およびその形成方法
EP1981074B1 (en) * 2006-02-02 2011-06-22 JSR Corporation Organic silica film and method for forming same, composition for forming insulating film of semiconductor device and method for producing same, wiring structure and semiconductor device
JP2007273494A (ja) * 2006-03-30 2007-10-18 Fujitsu Ltd 絶縁膜形成用組成物及び半導体装置の製造方法
JP2007324350A (ja) 2006-05-31 2007-12-13 Tokyo Electron Ltd 熱処理方法および熱処理装置、ならびに基板処理装置
JP5212591B2 (ja) * 2006-12-28 2013-06-19 Ｊｓｒ株式会社 積層体、絶縁膜、および半導体装置
KR20090119903A (ko) * 2007-02-14 2009-11-20 제이에스알 가부시끼가이샤 규소 함유 막 형성용 재료, 및 규소 함유 절연막 및 그의 형성 방법
JP2008243907A (ja) * 2007-03-26 2008-10-09 Jsr Corp 導電層間の空洞形成用組成物、導電層間の空洞形成用犠牲膜および導電層間の空洞形成方法
KR101530321B1 (ko) * 2007-08-08 2015-06-19 아라까와 가가꾸 고교 가부시끼가이샤 무연 땜납 플럭스 제거용 세정제 조성물 및 무연 땜납 플럭스의 제거 방법
JP5365785B2 (ja) * 2008-05-30 2013-12-11 Ｊｓｒ株式会社 有機ケイ素化合物の製造方法
JP4379637B1 (ja) 2009-03-30 2009-12-09 Ｊｓｒ株式会社 有機ケイ素化合物の製造方法
JP2011114163A (ja) * 2009-11-26 2011-06-09 Ube Nitto Kasei Co Ltd 素子分離材料用塗布液、素子分離材料用塗布液の作製方法、素子分離層用薄膜、素子分離層用薄膜の形成方法、基板、及び、基板の形成方法
WO2016089635A1 (en) * 2014-12-01 2016-06-09 Honeywell International Inc. Carbosilane polymers
KR101810892B1 (ko) * 2016-09-13 2017-12-20 동우 화인켐 주식회사 터치 센서 및 이를 포함하는 터치 스크린 패널

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100890321B1 (ko) * 2001-09-25 2009-03-26 제이에스알 가부시끼가이샤 적층체, 적층체의 형성 방법, 절연막 및 반도체용 기판

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US288629A (en) * 1883-11-20 Housing and insulation of electrical wires underground
US274948A (en) * 1883-04-03 la farge
US288634A (en) * 1883-11-20 Spring-vehicle
US259404A (en) * 1882-06-13 Electro-magnetic motor
US275544A (en) * 1883-04-10 tetamoee
JP3813268B2 (ja) * 1996-03-25 2006-08-23 触媒化成工業株式会社 低誘電率シリカ系被膜形成用塗布液および低誘電率被膜付基材
JP3997494B2 (ja) * 1996-09-17 2007-10-24 ソニー株式会社 半導体装置
US6318124B1 (en) * 1999-08-23 2001-11-20 Alliedsignal Inc. Nanoporous silica treated with siloxane polymers for ULSI applications
US6472076B1 (en) * 1999-10-18 2002-10-29 Honeywell International Inc. Deposition of organosilsesquioxane films
US6761975B1 (en) * 1999-12-23 2004-07-13 Honeywell International Inc. Polycarbosilane adhesion promoters for low dielectric constant polymeric materials
JP3604007B2 (ja) * 2000-03-29 2004-12-22 富士通株式会社 低誘電率被膜形成材料、及びそれを用いた被膜と半導体装置の製造方法
JP2001287910A (ja) * 2000-04-04 2001-10-16 Asahi Kasei Corp 多孔質ケイ素酸化物塗膜の製造方法
TW524883B (en) * 2000-05-22 2003-03-21 Jsr Corp Composition for film formation, process for producing composition for film formation, method of film formation, and silica-based film
JP3886779B2 (ja) * 2001-11-02 2007-02-28 富士通株式会社 絶縁膜形成用材料及び絶縁膜の形成方法
JP2003273100A (ja) * 2002-03-18 2003-09-26 Fujitsu Ltd 半導体装置及びその製造方法
US6809041B2 (en) * 2002-07-01 2004-10-26 Rensselaer Polytechnic Institute Low dielectric constant films derived by sol-gel processing of a hyperbranched polycarbosilane
JP2004158606A (ja) * 2002-11-06 2004-06-03 Fujitsu Ltd 半導体装置および半導体装置の製造方法
US7462678B2 (en) * 2003-09-25 2008-12-09 Jsr Corporation Film forming composition, process for producing film forming composition, insulating film forming material, process for forming film, and silica-based film
EP1615260A3 (en) * 2004-07-09 2009-09-16 JSR Corporation Organic silicon-oxide-based film, composition and method for forming the same, and semiconductor device
JP4355939B2 (ja) * 2004-07-23 2009-11-04 Ｊｓｒ株式会社 半導体装置の絶縁膜形成用組成物およびシリカ系膜の形成方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100890321B1 (ko) * 2001-09-25 2009-03-26 제이에스알 가부시끼가이샤 적층체, 적층체의 형성 방법, 절연막 및 반도체용 기판

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101293896B1 (ko) 2008-12-03 2013-08-06 후지쯔 가부시끼가이샤 반도체 장치의 제조 방법

Also Published As

Publication number Publication date
JP4737361B2 (ja) 2011-07-27
EP1696478A1 (en) 2006-08-30
JP2005183697A (ja) 2005-07-07
KR20060127058A (ko) 2006-12-11
EP1696478A4 (en) 2014-08-27
WO2005059987A1 (ja) 2005-06-30
TWI380323B (https=) 2012-12-21
US20060210812A1 (en) 2006-09-21
TW200531084A (en) 2005-09-16

Similar Documents

Publication Publication Date Title
KR101095746B1 (ko) 절연막 및 그의 형성 방법, 및 막 형성용 조성물
US8404786B2 (en) Polymer and process for producing the same, composition for forming insulating film, and insulating film and method of forming the same
KR101140535B1 (ko) 유기 실리카계 막의 형성 방법, 유기 실리카계 막, 배선구조체, 반도체 장치 및 막 형성용 조성물
US7514151B2 (en) Insulating film and method for forming the same, and film-forming composition
JP3906916B2 (ja) 膜形成用組成物、膜形成方法および膜
JP2000345041A (ja) 膜形成用組成物、膜形成用組成物の製造方法および絶縁膜形成用材料
KR100890321B1 (ko) 적층체, 적층체의 형성 방법, 절연막 및 반도체용 기판
JPWO2005108469A1 (ja) 有機シリカ系膜の形成方法、有機シリカ系膜、配線構造体、半導体装置、および膜形成用組成物
JP4117437B2 (ja) 膜形成用組成物、絶縁膜形成用材料およびシリカ系膜
JP5099302B2 (ja) 絶縁膜形成用組成物、ポリマーおよびその製造方法、絶縁膜の製造方法、ならびにシリカ系絶縁膜
JP2005272816A (ja) ポリマーおよびその製造方法、絶縁膜形成用組成物、ならびに絶縁膜およびその形成方法
US7556860B2 (en) Laminate and method of forming the same, insulating film, and semiconductor device
JP2009160826A (ja) 積層体およびその製造方法ならびに半導体装置
JP4434922B2 (ja) 積層体およびその形成方法、絶縁膜、ならびに半導体装置
JP5403204B2 (ja) 絶縁膜形成用組成物、絶縁膜の製造方法、およびそれによって得られる絶縁膜
JP3994258B2 (ja) 形成用組成物の製造方法および膜の形成方法
JP2005133040A (ja) 膜形成用組成物、シリカ系膜およびその形成方法、ならびに積層膜
JP4613393B2 (ja) 膜形成用組成物の製造方法、膜形成用組成物および絶縁膜形成用材料
JP4568959B2 (ja) シリコーン含有組成物および膜形成用組成物
JP4359764B2 (ja) 積層体およびその形成方法ならびに絶縁膜および半導体装置
JP3901619B2 (ja) 積層膜、絶縁膜ならびに半導体用基板
JP2005126589A (ja) 膜形成用組成物の製造方法、膜形成用組成物およびシリカ系膜
JP5212591B2 (ja) 積層体、絶縁膜、および半導体装置
JP2007088260A (ja) 積層体およびその形成方法、絶縁膜、ならびに半導体装置
JP2007088259A (ja) 積層体およびその形成方法、絶縁膜、ならびに半導体装置

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20141205

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20151204

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20161205

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20171213

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20171213

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000