KR101089530B1 - 반도체 장치 및 데이터 처리 시스템 - Google Patents
반도체 장치 및 데이터 처리 시스템 Download PDFInfo
- Publication number
- KR101089530B1 KR101089530B1 KR1020090054839A KR20090054839A KR101089530B1 KR 101089530 B1 KR101089530 B1 KR 101089530B1 KR 1020090054839 A KR1020090054839 A KR 1020090054839A KR 20090054839 A KR20090054839 A KR 20090054839A KR 101089530 B1 KR101089530 B1 KR 101089530B1
- Authority
- KR
- South Korea
- Prior art keywords
- mode
- information
- ports
- data
- terminal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/12015—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details comprising clock generation or timing circuitry
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/14—Implementation of control logic, e.g. test mode decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
- G11C7/1045—Read-write mode select circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
- G11C7/109—Control signal input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/06—Address interface arrangements, e.g. address buffers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/10—Aspects relating to interfaces of memory device to external buses
- G11C2207/107—Serial-parallel conversion of data or prefetch
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Dram (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Tests Of Electronic Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2008-162799 | 2008-06-23 | ||
| JP2008162799A JP5588100B2 (ja) | 2008-06-23 | 2008-06-23 | 半導体装置およびデータ処理システム |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020110020558A Division KR20110031445A (ko) | 2008-06-23 | 2011-03-08 | 반도체 장치 및 데이터 처리 시스템 |
| KR1020110020556A Division KR20110033988A (ko) | 2008-06-23 | 2011-03-08 | 반도체 장치 및 데이터 처리 시스템 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20090133083A KR20090133083A (ko) | 2009-12-31 |
| KR101089530B1 true KR101089530B1 (ko) | 2011-12-05 |
Family
ID=41431150
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020090054839A Expired - Fee Related KR101089530B1 (ko) | 2008-06-23 | 2009-06-19 | 반도체 장치 및 데이터 처리 시스템 |
| KR1020110020556A Ceased KR20110033988A (ko) | 2008-06-23 | 2011-03-08 | 반도체 장치 및 데이터 처리 시스템 |
| KR1020110020558A Ceased KR20110031445A (ko) | 2008-06-23 | 2011-03-08 | 반도체 장치 및 데이터 처리 시스템 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020110020556A Ceased KR20110033988A (ko) | 2008-06-23 | 2011-03-08 | 반도체 장치 및 데이터 처리 시스템 |
| KR1020110020558A Ceased KR20110031445A (ko) | 2008-06-23 | 2011-03-08 | 반도체 장치 및 데이터 처리 시스템 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7944767B2 (enExample) |
| JP (1) | JP5588100B2 (enExample) |
| KR (3) | KR101089530B1 (enExample) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100695432B1 (ko) | 2005-09-28 | 2007-03-16 | 주식회사 하이닉스반도체 | 직렬 입/출력 인터페이스를 가진 멀티 포트 메모리 소자 |
| KR100697832B1 (ko) | 2006-03-06 | 2007-03-20 | 엠텍비젼 주식회사 | 복수개의 포트를 가진 메모리 장치와 그 테스트 방법 |
| JP2007287306A (ja) | 2006-04-13 | 2007-11-01 | Hynix Semiconductor Inc | 直列入/出力インターフェースを有するマルチポートメモリ素子及びその動作モードの制御方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6298437A (ja) * | 1985-10-24 | 1987-05-07 | Oki Electric Ind Co Ltd | マイクロコンピユ−タ |
| JPH08278916A (ja) * | 1994-11-30 | 1996-10-22 | Hitachi Ltd | マルチチャネルメモリシステム、転送情報同期化方法及び信号転送回路 |
| US5799209A (en) * | 1995-12-29 | 1998-08-25 | Chatter; Mukesh | Multi-port internally cached DRAM system utilizing independent serial interfaces and buffers arbitratively connected under a dynamic configuration |
| JP2001195899A (ja) * | 2000-01-06 | 2001-07-19 | Mitsubishi Electric Corp | 半導体記憶装置 |
| KR100609038B1 (ko) * | 2004-05-06 | 2006-08-09 | 주식회사 하이닉스반도체 | 직렬 입/출력 인터페이스를 가진 멀티-포트 메모리 소자 |
| US7395476B2 (en) * | 2004-10-29 | 2008-07-01 | International Business Machines Corporation | System, method and storage medium for providing a high speed test interface to a memory subsystem |
| JP2006277872A (ja) | 2005-03-30 | 2006-10-12 | Elpida Memory Inc | 半導体記憶装置及びそのテスト方法 |
| KR100721581B1 (ko) * | 2005-09-29 | 2007-05-23 | 주식회사 하이닉스반도체 | 직렬 입/출력 인터페이스를 가진 멀티 포트 메모리 소자 |
| KR100695437B1 (ko) * | 2006-04-13 | 2007-03-16 | 주식회사 하이닉스반도체 | 멀티 포트 메모리 소자 |
| KR100695435B1 (ko) * | 2006-04-13 | 2007-03-16 | 주식회사 하이닉스반도체 | 반도체 메모리 소자 |
| KR100723889B1 (ko) * | 2006-06-30 | 2007-05-31 | 주식회사 하이닉스반도체 | 직렬 입/출력 인터페이스를 가진 멀티 포트 메모리 소자 |
| JP5579372B2 (ja) * | 2008-04-25 | 2014-08-27 | ピーエスフォー ルクスコ エスエイアールエル | 半導体集積回路 |
| US8407427B2 (en) * | 2008-10-29 | 2013-03-26 | Silicon Image, Inc. | Method and system for improving serial port memory communication latency and reliability |
-
2008
- 2008-06-23 JP JP2008162799A patent/JP5588100B2/ja not_active Expired - Fee Related
-
2009
- 2009-06-19 US US12/488,086 patent/US7944767B2/en not_active Expired - Fee Related
- 2009-06-19 KR KR1020090054839A patent/KR101089530B1/ko not_active Expired - Fee Related
-
2011
- 2011-03-08 KR KR1020110020556A patent/KR20110033988A/ko not_active Ceased
- 2011-03-08 KR KR1020110020558A patent/KR20110031445A/ko not_active Ceased
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100695432B1 (ko) | 2005-09-28 | 2007-03-16 | 주식회사 하이닉스반도체 | 직렬 입/출력 인터페이스를 가진 멀티 포트 메모리 소자 |
| KR100697832B1 (ko) | 2006-03-06 | 2007-03-20 | 엠텍비젼 주식회사 | 복수개의 포트를 가진 메모리 장치와 그 테스트 방법 |
| JP2007287306A (ja) | 2006-04-13 | 2007-11-01 | Hynix Semiconductor Inc | 直列入/出力インターフェースを有するマルチポートメモリ素子及びその動作モードの制御方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20090316510A1 (en) | 2009-12-24 |
| US7944767B2 (en) | 2011-05-17 |
| KR20110033988A (ko) | 2011-04-04 |
| KR20110031445A (ko) | 2011-03-28 |
| JP2010003377A (ja) | 2010-01-07 |
| JP5588100B2 (ja) | 2014-09-10 |
| KR20090133083A (ko) | 2009-12-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7327613B2 (en) | Input circuit for a memory device | |
| JP4084428B2 (ja) | 半導体記憶装置 | |
| JP5019904B2 (ja) | 直列入/出力インターフェースを有するマルチポートメモリ素子及びその動作モードの制御方法 | |
| KR101028682B1 (ko) | 반도체 장치와 그 메모리 시스템 | |
| US20080144397A1 (en) | Pipe latch circult of multi-bit prefetch-type semiconductor memory device with improved structure | |
| JP2002132580A (ja) | 半導体メモリ装置及びメモリシステム | |
| JP2010515197A (ja) | 不揮発性メモリ用の高速ファンアウトシステムアーキテクチャおよび入出力回路 | |
| KR100782495B1 (ko) | 반도체 메모리 장치 및 이 장치의 데이터 라이트 및 리드방법 | |
| US20020047137A1 (en) | Semiconductor integrated circuit device having hierarchical test interface circuit | |
| US9136016B2 (en) | Semiconductor memory apparatus | |
| US9530465B2 (en) | Semiconductor memory device | |
| JP5186587B1 (ja) | 試験装置および試験方法 | |
| US7607055B2 (en) | Semiconductor memory device and method of testing the same | |
| US6411563B1 (en) | Semiconductor integrated circuit device provided with a logic circuit and a memory circuit and being capable of efficient interface between the same | |
| KR101089530B1 (ko) | 반도체 장치 및 데이터 처리 시스템 | |
| US9530474B2 (en) | Semiconductor integrated circuit including semiconductor memory apparatus including a plurality of banks | |
| KR20070036492A (ko) | 반도체 메모리 장치 | |
| JP2005339659A (ja) | 半導体記憶装置及びその動作方法 | |
| JP2014220032A (ja) | 半導体装置およびデータ処理システム | |
| US20100169518A1 (en) | Semiconductor memory device | |
| CN100470672C (zh) | 用于减少数据线长度的半导体存储器件 | |
| JP3654013B2 (ja) | 半導体装置及びそのテスト方法 | |
| KR100596799B1 (ko) | 메모리 장치용 입력 데이타 분배 장치 | |
| JP4647578B2 (ja) | レーダ信号処理装置 | |
| KR20070068057A (ko) | 반도체 메모리 장치를 위한 입력 데이터 생성 장치 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| PA0109 | Patent application |
St.27 status event code: A-0-1-A10-A12-nap-PA0109 |
|
| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| D13-X000 | Search requested |
St.27 status event code: A-1-2-D10-D13-srh-X000 |
|
| D14-X000 | Search report completed |
St.27 status event code: A-1-2-D10-D14-srh-X000 |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
|
| A107 | Divisional application of patent | ||
| E13-X000 | Pre-grant limitation requested |
St.27 status event code: A-2-3-E10-E13-lim-X000 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| PA0107 | Divisional application |
St.27 status event code: A-0-1-A10-A18-div-PA0107 St.27 status event code: A-0-1-A10-A16-div-PA0107 |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
St.27 status event code: A-1-2-D10-D22-exm-PE0701 |
|
| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
St.27 status event code: A-2-4-F10-F11-exm-PR0701 |
|
| PR1002 | Payment of registration fee |
St.27 status event code: A-2-2-U10-U11-oth-PR1002 Fee payment year number: 1 |
|
| PG1601 | Publication of registration |
St.27 status event code: A-4-4-Q10-Q13-nap-PG1601 |
|
| PN2301 | Change of applicant |
St.27 status event code: A-5-5-R10-R11-asn-PN2301 |
|
| PN2301 | Change of applicant |
St.27 status event code: A-5-5-R10-R14-asn-PN2301 |
|
| FPAY | Annual fee payment |
Payment date: 20141103 Year of fee payment: 4 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 4 |
|
| FPAY | Annual fee payment |
Payment date: 20151120 Year of fee payment: 5 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 5 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-4-4-P10-P22-nap-X000 |
|
| LAPS | Lapse due to unpaid annual fee | ||
| PC1903 | Unpaid annual fee |
St.27 status event code: A-4-4-U10-U13-oth-PC1903 Not in force date: 20161130 Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE |
|
| PC1903 | Unpaid annual fee |
St.27 status event code: N-4-6-H10-H13-oth-PC1903 Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE Not in force date: 20161130 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-4-4-P10-P22-nap-X000 |