JP5588100B2 - 半導体装置およびデータ処理システム - Google Patents

半導体装置およびデータ処理システム Download PDF

Info

Publication number
JP5588100B2
JP5588100B2 JP2008162799A JP2008162799A JP5588100B2 JP 5588100 B2 JP5588100 B2 JP 5588100B2 JP 2008162799 A JP2008162799 A JP 2008162799A JP 2008162799 A JP2008162799 A JP 2008162799A JP 5588100 B2 JP5588100 B2 JP 5588100B2
Authority
JP
Japan
Prior art keywords
control information
information
operation mode
data
bit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008162799A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010003377A (ja
JP2010003377A5 (enExample
Inventor
透 石川
幸子 神先
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
PS4 Luxco SARL
Original Assignee
PS4 Luxco SARL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by PS4 Luxco SARL filed Critical PS4 Luxco SARL
Priority to JP2008162799A priority Critical patent/JP5588100B2/ja
Priority to KR1020090054839A priority patent/KR101089530B1/ko
Priority to US12/488,086 priority patent/US7944767B2/en
Publication of JP2010003377A publication Critical patent/JP2010003377A/ja
Priority to KR1020110020556A priority patent/KR20110033988A/ko
Priority to KR1020110020558A priority patent/KR20110031445A/ko
Publication of JP2010003377A5 publication Critical patent/JP2010003377A5/ja
Application granted granted Critical
Publication of JP5588100B2 publication Critical patent/JP5588100B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1015Read-write modes for single port memories, i.e. having either a random port or a serial port
    • G11C7/1045Read-write mode select circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/12015Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details comprising clock generation or timing circuitry
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/14Implementation of control logic, e.g. test mode decoders
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G11C7/109Control signal input circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C8/00Arrangements for selecting an address in a digital store
    • G11C8/06Address interface arrangements, e.g. address buffers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C2207/00Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/10Aspects relating to interfaces of memory device to external buses
    • G11C2207/107Serial-parallel conversion of data or prefetch

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dram (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Tests Of Electronic Circuits (AREA)
JP2008162799A 2008-06-23 2008-06-23 半導体装置およびデータ処理システム Expired - Fee Related JP5588100B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2008162799A JP5588100B2 (ja) 2008-06-23 2008-06-23 半導体装置およびデータ処理システム
KR1020090054839A KR101089530B1 (ko) 2008-06-23 2009-06-19 반도체 장치 및 데이터 처리 시스템
US12/488,086 US7944767B2 (en) 2008-06-23 2009-06-19 Semiconductor device and data processing system
KR1020110020556A KR20110033988A (ko) 2008-06-23 2011-03-08 반도체 장치 및 데이터 처리 시스템
KR1020110020558A KR20110031445A (ko) 2008-06-23 2011-03-08 반도체 장치 및 데이터 처리 시스템

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008162799A JP5588100B2 (ja) 2008-06-23 2008-06-23 半導体装置およびデータ処理システム

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014151615A Division JP2014220032A (ja) 2014-07-25 2014-07-25 半導体装置およびデータ処理システム

Publications (3)

Publication Number Publication Date
JP2010003377A JP2010003377A (ja) 2010-01-07
JP2010003377A5 JP2010003377A5 (enExample) 2011-05-19
JP5588100B2 true JP5588100B2 (ja) 2014-09-10

Family

ID=41431150

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008162799A Expired - Fee Related JP5588100B2 (ja) 2008-06-23 2008-06-23 半導体装置およびデータ処理システム

Country Status (3)

Country Link
US (1) US7944767B2 (enExample)
JP (1) JP5588100B2 (enExample)
KR (3) KR101089530B1 (enExample)

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6298437A (ja) * 1985-10-24 1987-05-07 Oki Electric Ind Co Ltd マイクロコンピユ−タ
JPH08278916A (ja) * 1994-11-30 1996-10-22 Hitachi Ltd マルチチャネルメモリシステム、転送情報同期化方法及び信号転送回路
US5799209A (en) * 1995-12-29 1998-08-25 Chatter; Mukesh Multi-port internally cached DRAM system utilizing independent serial interfaces and buffers arbitratively connected under a dynamic configuration
JP2001195899A (ja) * 2000-01-06 2001-07-19 Mitsubishi Electric Corp 半導体記憶装置
KR100609038B1 (ko) * 2004-05-06 2006-08-09 주식회사 하이닉스반도체 직렬 입/출력 인터페이스를 가진 멀티-포트 메모리 소자
US7395476B2 (en) * 2004-10-29 2008-07-01 International Business Machines Corporation System, method and storage medium for providing a high speed test interface to a memory subsystem
JP2006277872A (ja) 2005-03-30 2006-10-12 Elpida Memory Inc 半導体記憶装置及びそのテスト方法
KR100695432B1 (ko) 2005-09-28 2007-03-16 주식회사 하이닉스반도체 직렬 입/출력 인터페이스를 가진 멀티 포트 메모리 소자
KR100721581B1 (ko) * 2005-09-29 2007-05-23 주식회사 하이닉스반도체 직렬 입/출력 인터페이스를 가진 멀티 포트 메모리 소자
KR100697832B1 (ko) 2006-03-06 2007-03-20 엠텍비젼 주식회사 복수개의 포트를 가진 메모리 장치와 그 테스트 방법
KR100695437B1 (ko) * 2006-04-13 2007-03-16 주식회사 하이닉스반도체 멀티 포트 메모리 소자
KR100695435B1 (ko) * 2006-04-13 2007-03-16 주식회사 하이닉스반도체 반도체 메모리 소자
KR100695436B1 (ko) * 2006-04-13 2007-03-16 주식회사 하이닉스반도체 직렬 입/출력 인터페이스를 가진 멀티 포트 메모리 소자 및그의 동작 모드 제어방법
KR100723889B1 (ko) * 2006-06-30 2007-05-31 주식회사 하이닉스반도체 직렬 입/출력 인터페이스를 가진 멀티 포트 메모리 소자
JP5579372B2 (ja) * 2008-04-25 2014-08-27 ピーエスフォー ルクスコ エスエイアールエル 半導体集積回路
US8407427B2 (en) * 2008-10-29 2013-03-26 Silicon Image, Inc. Method and system for improving serial port memory communication latency and reliability

Also Published As

Publication number Publication date
US20090316510A1 (en) 2009-12-24
US7944767B2 (en) 2011-05-17
KR20110033988A (ko) 2011-04-04
KR101089530B1 (ko) 2011-12-05
KR20110031445A (ko) 2011-03-28
JP2010003377A (ja) 2010-01-07
KR20090133083A (ko) 2009-12-31

Similar Documents

Publication Publication Date Title
KR100396944B1 (ko) 반도체 기억 장치 및 그를 이용한 메모리 시스템
US8027203B2 (en) Pipe latch circuit of multi-bit prefetch-type semiconductor memory device with improved structure
JP2016527647A (ja) ハイブリッド・メモリ・モジュール用メモリの入出力を構成するための装置および方法
JP2009170002A (ja) 半導体記憶装置及びその半導体記憶装置を含むデータ処理システム
US20120155200A1 (en) Memory device, memory system including the same, and control method thereof
US9530465B2 (en) Semiconductor memory device
JP2007184072A (ja) 半導体装置のアドレス変換器及び半導体メモリ装置
US7257754B2 (en) Semiconductor memory device and test pattern data generating method using the same
US20110026337A1 (en) Data input/output circuit and semiconductor memory apparatus including the same
JP5588100B2 (ja) 半導体装置およびデータ処理システム
US9530474B2 (en) Semiconductor integrated circuit including semiconductor memory apparatus including a plurality of banks
KR20140068648A (ko) 반도체 메모리 장치
JP2014220032A (ja) 半導体装置およびデータ処理システム
KR20070036492A (ko) 반도체 메모리 장치
JP2001014842A (ja) 半導体記憶装置及びメモリ混載ロジックlsi
US8117485B2 (en) Memory system for seamless switching
US20100169518A1 (en) Semiconductor memory device
US7596046B2 (en) Data conversion circuit, and semiconductor memory apparatus using the same
US8010765B2 (en) Semiconductor memory device and method for controlling clock latency according to reordering of burst data
JP2009032055A (ja) データ記憶装置
KR100596799B1 (ko) 메모리 장치용 입력 데이타 분배 장치
US8254205B2 (en) Circuit and method for shifting address
KR20070068057A (ko) 반도체 메모리 장치를 위한 입력 데이터 생성 장치
CN119479760A (zh) 存储器和测试方法
JP2000155157A (ja) 半導体装置及びそのテスト方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110406

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110406

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20130730

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130822

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20131210

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20131217

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20140306

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20140311

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140610

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140701

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140725

R150 Certificate of patent or registration of utility model

Ref document number: 5588100

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

LAPS Cancellation because of no payment of annual fees