JP5588100B2 - 半導体装置およびデータ処理システム - Google Patents
半導体装置およびデータ処理システム Download PDFInfo
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- JP5588100B2 JP5588100B2 JP2008162799A JP2008162799A JP5588100B2 JP 5588100 B2 JP5588100 B2 JP 5588100B2 JP 2008162799 A JP2008162799 A JP 2008162799A JP 2008162799 A JP2008162799 A JP 2008162799A JP 5588100 B2 JP5588100 B2 JP 5588100B2
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- 239000004065 semiconductor Substances 0.000 title claims description 67
- 238000012545 processing Methods 0.000 title claims description 12
- 230000005540 biological transmission Effects 0.000 claims description 6
- 238000004891 communication Methods 0.000 claims description 6
- 230000004044 response Effects 0.000 claims description 3
- 238000012360 testing method Methods 0.000 description 19
- 238000012546 transfer Methods 0.000 description 14
- 238000010586 diagram Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 230000001360 synchronised effect Effects 0.000 description 4
- 238000011161 development Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 238000007596 consolidation process Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
- G11C7/1045—Read-write mode select circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/12015—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details comprising clock generation or timing circuitry
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/14—Implementation of control logic, e.g. test mode decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
- G11C7/109—Control signal input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/06—Address interface arrangements, e.g. address buffers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/10—Aspects relating to interfaces of memory device to external buses
- G11C2207/107—Serial-parallel conversion of data or prefetch
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Dram (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Tests Of Electronic Circuits (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008162799A JP5588100B2 (ja) | 2008-06-23 | 2008-06-23 | 半導体装置およびデータ処理システム |
| KR1020090054839A KR101089530B1 (ko) | 2008-06-23 | 2009-06-19 | 반도체 장치 및 데이터 처리 시스템 |
| US12/488,086 US7944767B2 (en) | 2008-06-23 | 2009-06-19 | Semiconductor device and data processing system |
| KR1020110020556A KR20110033988A (ko) | 2008-06-23 | 2011-03-08 | 반도체 장치 및 데이터 처리 시스템 |
| KR1020110020558A KR20110031445A (ko) | 2008-06-23 | 2011-03-08 | 반도체 장치 및 데이터 처리 시스템 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008162799A JP5588100B2 (ja) | 2008-06-23 | 2008-06-23 | 半導体装置およびデータ処理システム |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014151615A Division JP2014220032A (ja) | 2014-07-25 | 2014-07-25 | 半導体装置およびデータ処理システム |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010003377A JP2010003377A (ja) | 2010-01-07 |
| JP2010003377A5 JP2010003377A5 (enExample) | 2011-05-19 |
| JP5588100B2 true JP5588100B2 (ja) | 2014-09-10 |
Family
ID=41431150
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008162799A Expired - Fee Related JP5588100B2 (ja) | 2008-06-23 | 2008-06-23 | 半導体装置およびデータ処理システム |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7944767B2 (enExample) |
| JP (1) | JP5588100B2 (enExample) |
| KR (3) | KR101089530B1 (enExample) |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6298437A (ja) * | 1985-10-24 | 1987-05-07 | Oki Electric Ind Co Ltd | マイクロコンピユ−タ |
| JPH08278916A (ja) * | 1994-11-30 | 1996-10-22 | Hitachi Ltd | マルチチャネルメモリシステム、転送情報同期化方法及び信号転送回路 |
| US5799209A (en) * | 1995-12-29 | 1998-08-25 | Chatter; Mukesh | Multi-port internally cached DRAM system utilizing independent serial interfaces and buffers arbitratively connected under a dynamic configuration |
| JP2001195899A (ja) * | 2000-01-06 | 2001-07-19 | Mitsubishi Electric Corp | 半導体記憶装置 |
| KR100609038B1 (ko) * | 2004-05-06 | 2006-08-09 | 주식회사 하이닉스반도체 | 직렬 입/출력 인터페이스를 가진 멀티-포트 메모리 소자 |
| US7395476B2 (en) * | 2004-10-29 | 2008-07-01 | International Business Machines Corporation | System, method and storage medium for providing a high speed test interface to a memory subsystem |
| JP2006277872A (ja) | 2005-03-30 | 2006-10-12 | Elpida Memory Inc | 半導体記憶装置及びそのテスト方法 |
| KR100695432B1 (ko) | 2005-09-28 | 2007-03-16 | 주식회사 하이닉스반도체 | 직렬 입/출력 인터페이스를 가진 멀티 포트 메모리 소자 |
| KR100721581B1 (ko) * | 2005-09-29 | 2007-05-23 | 주식회사 하이닉스반도체 | 직렬 입/출력 인터페이스를 가진 멀티 포트 메모리 소자 |
| KR100697832B1 (ko) | 2006-03-06 | 2007-03-20 | 엠텍비젼 주식회사 | 복수개의 포트를 가진 메모리 장치와 그 테스트 방법 |
| KR100695437B1 (ko) * | 2006-04-13 | 2007-03-16 | 주식회사 하이닉스반도체 | 멀티 포트 메모리 소자 |
| KR100695435B1 (ko) * | 2006-04-13 | 2007-03-16 | 주식회사 하이닉스반도체 | 반도체 메모리 소자 |
| KR100695436B1 (ko) * | 2006-04-13 | 2007-03-16 | 주식회사 하이닉스반도체 | 직렬 입/출력 인터페이스를 가진 멀티 포트 메모리 소자 및그의 동작 모드 제어방법 |
| KR100723889B1 (ko) * | 2006-06-30 | 2007-05-31 | 주식회사 하이닉스반도체 | 직렬 입/출력 인터페이스를 가진 멀티 포트 메모리 소자 |
| JP5579372B2 (ja) * | 2008-04-25 | 2014-08-27 | ピーエスフォー ルクスコ エスエイアールエル | 半導体集積回路 |
| US8407427B2 (en) * | 2008-10-29 | 2013-03-26 | Silicon Image, Inc. | Method and system for improving serial port memory communication latency and reliability |
-
2008
- 2008-06-23 JP JP2008162799A patent/JP5588100B2/ja not_active Expired - Fee Related
-
2009
- 2009-06-19 US US12/488,086 patent/US7944767B2/en not_active Expired - Fee Related
- 2009-06-19 KR KR1020090054839A patent/KR101089530B1/ko not_active Expired - Fee Related
-
2011
- 2011-03-08 KR KR1020110020556A patent/KR20110033988A/ko not_active Ceased
- 2011-03-08 KR KR1020110020558A patent/KR20110031445A/ko not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| US20090316510A1 (en) | 2009-12-24 |
| US7944767B2 (en) | 2011-05-17 |
| KR20110033988A (ko) | 2011-04-04 |
| KR101089530B1 (ko) | 2011-12-05 |
| KR20110031445A (ko) | 2011-03-28 |
| JP2010003377A (ja) | 2010-01-07 |
| KR20090133083A (ko) | 2009-12-31 |
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