KR101070552B1 - 반도체 기억 장치 - Google Patents

반도체 기억 장치 Download PDF

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Publication number
KR101070552B1
KR101070552B1 KR1020050018011A KR20050018011A KR101070552B1 KR 101070552 B1 KR101070552 B1 KR 101070552B1 KR 1020050018011 A KR1020050018011 A KR 1020050018011A KR 20050018011 A KR20050018011 A KR 20050018011A KR 101070552 B1 KR101070552 B1 KR 101070552B1
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KR
South Korea
Prior art keywords
misfet
circuit
voltage
source line
pull
Prior art date
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Expired - Fee Related
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KR1020050018011A
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English (en)
Korean (ko)
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KR20060043391A (ko
Inventor
사또루 아끼야마
리이찌로 다께무라
다까유끼 가와하라
도모노리 세끼구찌
Original Assignee
가부시키가이샤 히타치세이사쿠쇼
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Publication date
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Publication of KR20060043391A publication Critical patent/KR20060043391A/ko
Application granted granted Critical
Publication of KR101070552B1 publication Critical patent/KR101070552B1/ko
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61G—TRANSPORT, PERSONAL CONVEYANCES, OR ACCOMMODATION SPECIALLY ADAPTED FOR PATIENTS OR DISABLED PERSONS; OPERATING TABLES OR CHAIRS; CHAIRS FOR DENTISTRY; FUNERAL DEVICES
    • A61G17/00—Coffins; Funeral wrappings; Funeral urns
    • A61G17/04—Fittings for coffins
    • A61G17/047—Devices for absorbing decomposition liquid
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/06—Sense amplifier related aspects
    • G11C2207/065—Sense amplifier drivers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/50—Peripheral circuit region structures

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Animal Behavior & Ethology (AREA)
  • General Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Veterinary Medicine (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
KR1020050018011A 2004-04-02 2005-03-04 반도체 기억 장치 Expired - Fee Related KR101070552B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004109598A JP4729861B2 (ja) 2004-04-02 2004-04-02 半導体記憶装置
JPJP-P-2004-00109598 2004-04-02

Publications (2)

Publication Number Publication Date
KR20060043391A KR20060043391A (ko) 2006-05-15
KR101070552B1 true KR101070552B1 (ko) 2011-10-05

Family

ID=35050004

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050018011A Expired - Fee Related KR101070552B1 (ko) 2004-04-02 2005-03-04 반도체 기억 장치

Country Status (4)

Country Link
US (4) US7224629B2 (enExample)
JP (1) JP4729861B2 (enExample)
KR (1) KR101070552B1 (enExample)
CN (1) CN1677564B (enExample)

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* Cited by examiner, † Cited by third party
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DE10319271A1 (de) * 2003-04-29 2004-11-25 Infineon Technologies Ag Speicher-Schaltungsanordnung und Verfahren zur Herstellung
JP4729861B2 (ja) * 2004-04-02 2011-07-20 株式会社日立製作所 半導体記憶装置
KR100624296B1 (ko) * 2004-11-08 2006-09-19 주식회사 하이닉스반도체 반도체 메모리 소자
JP4632833B2 (ja) * 2005-03-25 2011-02-16 富士通株式会社 半導体装置
US7330388B1 (en) * 2005-09-23 2008-02-12 Cypress Semiconductor Corporation Sense amplifier circuit and method of operation
JP5694625B2 (ja) 2006-04-13 2015-04-01 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体記憶装置
JP2008016749A (ja) * 2006-07-10 2008-01-24 Elpida Memory Inc 半導体装置
JP2008052876A (ja) * 2006-08-28 2008-03-06 Toshiba Corp 半導体記憶装置
JP2008176910A (ja) * 2006-12-21 2008-07-31 Matsushita Electric Ind Co Ltd 半導体記憶装置
JP5248019B2 (ja) * 2007-01-09 2013-07-31 エルピーダメモリ株式会社 半導体記憶装置、及びそのセンスアンプ回路
KR101389202B1 (ko) * 2007-08-29 2014-04-24 에이저 시스템즈 엘엘시 감지 증폭기, 집적 회로, 전자 시스템 및 오프셋을 감소시키는 방법
JP2009110578A (ja) * 2007-10-29 2009-05-21 Elpida Memory Inc センスアンプ制御回路及び制御方法
JP2010161173A (ja) * 2009-01-07 2010-07-22 Renesas Electronics Corp 半導体記憶装置
US8283708B2 (en) * 2009-09-18 2012-10-09 Micron Technology, Inc. Semiconductor devices and methods of forming semiconductor devices having diffusion regions of reduced width
KR102647090B1 (ko) * 2010-02-23 2024-03-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
KR20120087626A (ko) * 2011-01-28 2012-08-07 에스케이하이닉스 주식회사 반도체 메모리 장치
KR101857729B1 (ko) * 2011-06-17 2018-06-20 삼성전자주식회사 반도체 장치
US9401363B2 (en) * 2011-08-23 2016-07-26 Micron Technology, Inc. Vertical transistor devices, memory arrays, and methods of forming vertical transistor devices
US10014068B2 (en) 2011-10-07 2018-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20140246725A1 (en) * 2013-03-04 2014-09-04 Samsung Electronics Co., Ltd. Integrated Circuit Memory Devices Including Parallel Patterns in Adjacent Regions
US9589962B2 (en) 2014-06-17 2017-03-07 Micron Technology, Inc. Array of conductive vias, methods of forming a memory array, and methods of forming conductive vias
KR102190868B1 (ko) 2014-09-17 2020-12-15 삼성전자주식회사 비트라인 연결 배선 저항 차를 보상하는 반도체 메모리 장치
WO2016134319A1 (en) 2015-02-19 2016-08-25 Enphase Energy, Inc. Method and apparatus for time-domain droop control with integrated phasor current control
US9437282B1 (en) 2015-08-06 2016-09-06 Globalfoundries Inc. High performance sense amplifier
CN109308922B (zh) * 2017-07-28 2020-10-09 中芯国际集成电路制造(上海)有限公司 一种存储器及其数据读出驱动电路
US10811061B1 (en) * 2019-08-14 2020-10-20 Micron Technology, Inc. Reduced die size and improved memory cell restore using shared common source driver
US12243579B2 (en) * 2020-06-30 2025-03-04 Micron Technology, Inc. Layouts for sense amplifiers and related apparatuses and systems
US11152055B1 (en) * 2020-07-21 2021-10-19 Micron Technology, Inc. Apparatuses including threshold voltage compensated sense amplifiers and methods for compensating same
CN111863606B (zh) * 2020-07-28 2023-05-05 哈尔滨工业大学 一种抗辐射功率晶体管及其制备方法
CN114121960B (zh) * 2021-11-19 2024-11-29 北京超弦存储器研究院 存储器件及其制造方法及包括存储器件的电子设备

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US502913A (en) * 1893-08-08 Clothes-drier
JPS576492A (en) * 1980-06-12 1982-01-13 Fujitsu Ltd Sense amplifier circuit of memory
JPH0214677A (ja) 1988-06-30 1990-01-18 Konica Corp ディスクフィルムプレーヤのフィルム位置調整機構
JPH0766664B2 (ja) 1988-11-28 1995-07-19 日本電気株式会社 半導体メモリ回路
JPH03214493A (ja) * 1990-01-18 1991-09-19 Matsushita Electric Ind Co Ltd センス増幅回路及びそのソース抵抗の形成方法
JPH07226081A (ja) 1994-02-15 1995-08-22 Mitsubishi Electric Corp 半導体記憶装置
US6043562A (en) * 1996-01-26 2000-03-28 Micron Technology, Inc. Digit line architecture for dynamic memory
US6157587A (en) * 1997-11-06 2000-12-05 Alliance Semiconductor Corporation Data sense arrangement for random access memory
JPH11265577A (ja) * 1998-03-16 1999-09-28 Hitachi Ltd 半導体記憶装置
JP4928675B2 (ja) 2001-03-01 2012-05-09 エルピーダメモリ株式会社 半導体装置
JP2003347431A (ja) * 2002-05-29 2003-12-05 Fujitsu Ltd 半導体記憶装置
JP2004047529A (ja) * 2002-07-09 2004-02-12 Renesas Technology Corp 半導体記憶装置
US7227798B2 (en) * 2002-10-07 2007-06-05 Stmicroelectronics Pvt. Ltd. Latch-type sense amplifier
US7224529B2 (en) * 2003-09-09 2007-05-29 3M Innovative Properties Company Microreplicated article
JP4729861B2 (ja) * 2004-04-02 2011-07-20 株式会社日立製作所 半導体記憶装置
KR100702004B1 (ko) * 2004-08-02 2007-03-30 삼성전자주식회사 반도체 메모리 장치 및 이 장치의 비트 라인 센싱 방법
JP5248019B2 (ja) * 2007-01-09 2013-07-31 エルピーダメモリ株式会社 半導体記憶装置、及びそのセンスアンプ回路

Also Published As

Publication number Publication date
US7492655B2 (en) 2009-02-17
US20070187736A1 (en) 2007-08-16
CN1677564B (zh) 2012-02-08
JP2005293759A (ja) 2005-10-20
US7843751B2 (en) 2010-11-30
US20090180343A1 (en) 2009-07-16
US20110103136A1 (en) 2011-05-05
CN1677564A (zh) 2005-10-05
US8199596B2 (en) 2012-06-12
KR20060043391A (ko) 2006-05-15
US20050232044A1 (en) 2005-10-20
JP4729861B2 (ja) 2011-07-20
US7224629B2 (en) 2007-05-29

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