JP4729861B2 - 半導体記憶装置 - Google Patents

半導体記憶装置 Download PDF

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Publication number
JP4729861B2
JP4729861B2 JP2004109598A JP2004109598A JP4729861B2 JP 4729861 B2 JP4729861 B2 JP 4729861B2 JP 2004109598 A JP2004109598 A JP 2004109598A JP 2004109598 A JP2004109598 A JP 2004109598A JP 4729861 B2 JP4729861 B2 JP 4729861B2
Authority
JP
Japan
Prior art keywords
misfet
sense amplifier
misfet pair
pair
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004109598A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005293759A (ja
JP2005293759A5 (enExample
Inventor
悟 秋山
理一郎 竹村
尊之 河原
知紀 関口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2004109598A priority Critical patent/JP4729861B2/ja
Priority to KR1020050018011A priority patent/KR101070552B1/ko
Priority to US11/071,351 priority patent/US7224629B2/en
Priority to CN2005100530691A priority patent/CN1677564B/zh
Publication of JP2005293759A publication Critical patent/JP2005293759A/ja
Publication of JP2005293759A5 publication Critical patent/JP2005293759A5/ja
Priority to US11/737,693 priority patent/US7492655B2/en
Priority to US12/352,347 priority patent/US7843751B2/en
Priority to US12/939,069 priority patent/US8199596B2/en
Application granted granted Critical
Publication of JP4729861B2 publication Critical patent/JP4729861B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61G—TRANSPORT, PERSONAL CONVEYANCES, OR ACCOMMODATION SPECIALLY ADAPTED FOR PATIENTS OR DISABLED PERSONS; OPERATING TABLES OR CHAIRS; CHAIRS FOR DENTISTRY; FUNERAL DEVICES
    • A61G17/00—Coffins; Funeral wrappings; Funeral urns
    • A61G17/04—Fittings for coffins
    • A61G17/047—Devices for absorbing decomposition liquid
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/06—Sense amplifier related aspects
    • G11C2207/065—Sense amplifier drivers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/50—Peripheral circuit region structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Animal Behavior & Ethology (AREA)
  • General Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Veterinary Medicine (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
JP2004109598A 2004-04-02 2004-04-02 半導体記憶装置 Expired - Fee Related JP4729861B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2004109598A JP4729861B2 (ja) 2004-04-02 2004-04-02 半導体記憶装置
KR1020050018011A KR101070552B1 (ko) 2004-04-02 2005-03-04 반도체 기억 장치
US11/071,351 US7224629B2 (en) 2004-04-02 2005-03-04 Memory device having high speed sense amplifier comprising pull-up circuit and pull-down circuits with different drivability for each
CN2005100530691A CN1677564B (zh) 2004-04-02 2005-03-07 半导体存储器件
US11/737,693 US7492655B2 (en) 2004-04-02 2007-04-19 Memory device having high speed sense amplifier comprising pull-up circuit and pull-down circuits with drivability for each
US12/352,347 US7843751B2 (en) 2004-04-02 2009-01-12 Semiconductor memory device comprising sense amplifier having P-type sense amplifier and N-type sense amplifiers with different threshold voltages
US12/939,069 US8199596B2 (en) 2004-04-02 2010-11-03 Semiconductor memory device having a plurality of sense amplifier circuits

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004109598A JP4729861B2 (ja) 2004-04-02 2004-04-02 半導体記憶装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010122214A Division JP2010182419A (ja) 2010-05-28 2010-05-28 半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2005293759A JP2005293759A (ja) 2005-10-20
JP2005293759A5 JP2005293759A5 (enExample) 2007-03-01
JP4729861B2 true JP4729861B2 (ja) 2011-07-20

Family

ID=35050004

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004109598A Expired - Fee Related JP4729861B2 (ja) 2004-04-02 2004-04-02 半導体記憶装置

Country Status (4)

Country Link
US (4) US7224629B2 (enExample)
JP (1) JP4729861B2 (enExample)
KR (1) KR101070552B1 (enExample)
CN (1) CN1677564B (enExample)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10319271A1 (de) * 2003-04-29 2004-11-25 Infineon Technologies Ag Speicher-Schaltungsanordnung und Verfahren zur Herstellung
JP4729861B2 (ja) * 2004-04-02 2011-07-20 株式会社日立製作所 半導体記憶装置
KR100624296B1 (ko) * 2004-11-08 2006-09-19 주식회사 하이닉스반도체 반도체 메모리 소자
JP4632833B2 (ja) * 2005-03-25 2011-02-16 富士通株式会社 半導体装置
US7330388B1 (en) * 2005-09-23 2008-02-12 Cypress Semiconductor Corporation Sense amplifier circuit and method of operation
JP5694625B2 (ja) 2006-04-13 2015-04-01 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体記憶装置
JP2008016749A (ja) * 2006-07-10 2008-01-24 Elpida Memory Inc 半導体装置
JP2008052876A (ja) * 2006-08-28 2008-03-06 Toshiba Corp 半導体記憶装置
JP2008176910A (ja) * 2006-12-21 2008-07-31 Matsushita Electric Ind Co Ltd 半導体記憶装置
JP5248019B2 (ja) * 2007-01-09 2013-07-31 エルピーダメモリ株式会社 半導体記憶装置、及びそのセンスアンプ回路
KR101389202B1 (ko) * 2007-08-29 2014-04-24 에이저 시스템즈 엘엘시 감지 증폭기, 집적 회로, 전자 시스템 및 오프셋을 감소시키는 방법
JP2009110578A (ja) * 2007-10-29 2009-05-21 Elpida Memory Inc センスアンプ制御回路及び制御方法
JP2010161173A (ja) * 2009-01-07 2010-07-22 Renesas Electronics Corp 半導体記憶装置
US8283708B2 (en) * 2009-09-18 2012-10-09 Micron Technology, Inc. Semiconductor devices and methods of forming semiconductor devices having diffusion regions of reduced width
KR102647090B1 (ko) * 2010-02-23 2024-03-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
KR20120087626A (ko) * 2011-01-28 2012-08-07 에스케이하이닉스 주식회사 반도체 메모리 장치
KR101857729B1 (ko) * 2011-06-17 2018-06-20 삼성전자주식회사 반도체 장치
US9401363B2 (en) * 2011-08-23 2016-07-26 Micron Technology, Inc. Vertical transistor devices, memory arrays, and methods of forming vertical transistor devices
US10014068B2 (en) 2011-10-07 2018-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20140246725A1 (en) * 2013-03-04 2014-09-04 Samsung Electronics Co., Ltd. Integrated Circuit Memory Devices Including Parallel Patterns in Adjacent Regions
US9589962B2 (en) 2014-06-17 2017-03-07 Micron Technology, Inc. Array of conductive vias, methods of forming a memory array, and methods of forming conductive vias
KR102190868B1 (ko) 2014-09-17 2020-12-15 삼성전자주식회사 비트라인 연결 배선 저항 차를 보상하는 반도체 메모리 장치
WO2016134319A1 (en) 2015-02-19 2016-08-25 Enphase Energy, Inc. Method and apparatus for time-domain droop control with integrated phasor current control
US9437282B1 (en) 2015-08-06 2016-09-06 Globalfoundries Inc. High performance sense amplifier
CN109308922B (zh) * 2017-07-28 2020-10-09 中芯国际集成电路制造(上海)有限公司 一种存储器及其数据读出驱动电路
US10811061B1 (en) * 2019-08-14 2020-10-20 Micron Technology, Inc. Reduced die size and improved memory cell restore using shared common source driver
US12243579B2 (en) * 2020-06-30 2025-03-04 Micron Technology, Inc. Layouts for sense amplifiers and related apparatuses and systems
US11152055B1 (en) * 2020-07-21 2021-10-19 Micron Technology, Inc. Apparatuses including threshold voltage compensated sense amplifiers and methods for compensating same
CN111863606B (zh) * 2020-07-28 2023-05-05 哈尔滨工业大学 一种抗辐射功率晶体管及其制备方法
CN114121960B (zh) * 2021-11-19 2024-11-29 北京超弦存储器研究院 存储器件及其制造方法及包括存储器件的电子设备

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US502913A (en) * 1893-08-08 Clothes-drier
JPS576492A (en) * 1980-06-12 1982-01-13 Fujitsu Ltd Sense amplifier circuit of memory
JPH0214677A (ja) 1988-06-30 1990-01-18 Konica Corp ディスクフィルムプレーヤのフィルム位置調整機構
JPH0766664B2 (ja) 1988-11-28 1995-07-19 日本電気株式会社 半導体メモリ回路
JPH03214493A (ja) * 1990-01-18 1991-09-19 Matsushita Electric Ind Co Ltd センス増幅回路及びそのソース抵抗の形成方法
JPH07226081A (ja) 1994-02-15 1995-08-22 Mitsubishi Electric Corp 半導体記憶装置
US6043562A (en) * 1996-01-26 2000-03-28 Micron Technology, Inc. Digit line architecture for dynamic memory
US6157587A (en) * 1997-11-06 2000-12-05 Alliance Semiconductor Corporation Data sense arrangement for random access memory
JPH11265577A (ja) * 1998-03-16 1999-09-28 Hitachi Ltd 半導体記憶装置
JP4928675B2 (ja) 2001-03-01 2012-05-09 エルピーダメモリ株式会社 半導体装置
JP2003347431A (ja) * 2002-05-29 2003-12-05 Fujitsu Ltd 半導体記憶装置
JP2004047529A (ja) * 2002-07-09 2004-02-12 Renesas Technology Corp 半導体記憶装置
US7227798B2 (en) * 2002-10-07 2007-06-05 Stmicroelectronics Pvt. Ltd. Latch-type sense amplifier
US7224529B2 (en) * 2003-09-09 2007-05-29 3M Innovative Properties Company Microreplicated article
JP4729861B2 (ja) * 2004-04-02 2011-07-20 株式会社日立製作所 半導体記憶装置
KR100702004B1 (ko) * 2004-08-02 2007-03-30 삼성전자주식회사 반도체 메모리 장치 및 이 장치의 비트 라인 센싱 방법
JP5248019B2 (ja) * 2007-01-09 2013-07-31 エルピーダメモリ株式会社 半導体記憶装置、及びそのセンスアンプ回路

Also Published As

Publication number Publication date
US7492655B2 (en) 2009-02-17
US20070187736A1 (en) 2007-08-16
CN1677564B (zh) 2012-02-08
JP2005293759A (ja) 2005-10-20
US7843751B2 (en) 2010-11-30
US20090180343A1 (en) 2009-07-16
US20110103136A1 (en) 2011-05-05
CN1677564A (zh) 2005-10-05
US8199596B2 (en) 2012-06-12
KR101070552B1 (ko) 2011-10-05
KR20060043391A (ko) 2006-05-15
US20050232044A1 (en) 2005-10-20
US7224629B2 (en) 2007-05-29

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