KR101054673B1 - 반도체 장치 및 그 제조 방법 - Google Patents
반도체 장치 및 그 제조 방법 Download PDFInfo
- Publication number
- KR101054673B1 KR101054673B1 KR1020067005772A KR20067005772A KR101054673B1 KR 101054673 B1 KR101054673 B1 KR 101054673B1 KR 1020067005772 A KR1020067005772 A KR 1020067005772A KR 20067005772 A KR20067005772 A KR 20067005772A KR 101054673 B1 KR101054673 B1 KR 101054673B1
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- conductive
- electrode
- smoothing
- dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
- H10D1/696—Electrodes comprising multiple layers, e.g. comprising a barrier layer and a metal layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H01L23/5223—Capacitor integral with wiring layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
- H10D1/694—Electrodes comprising noble metals or noble metal oxides
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/668,694 US7078785B2 (en) | 2003-09-23 | 2003-09-23 | Semiconductor device and making thereof |
| US10/668,694 | 2003-09-23 | ||
| PCT/US2004/028262 WO2005036597A2 (en) | 2003-09-23 | 2004-08-31 | Semiconductor device and making thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20070017953A KR20070017953A (ko) | 2007-02-13 |
| KR101054673B1 true KR101054673B1 (ko) | 2011-08-08 |
Family
ID=34313543
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020067005772A Expired - Fee Related KR101054673B1 (ko) | 2003-09-23 | 2004-08-31 | 반도체 장치 및 그 제조 방법 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7078785B2 (enExample) |
| EP (1) | EP1668673A2 (enExample) |
| JP (1) | JP2007515775A (enExample) |
| KR (1) | KR101054673B1 (enExample) |
| CN (1) | CN101160663B (enExample) |
| TW (1) | TWI349367B (enExample) |
| WO (1) | WO2005036597A2 (enExample) |
Families Citing this family (69)
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| KR100539198B1 (ko) * | 2003-03-10 | 2005-12-27 | 삼성전자주식회사 | 금속-절연체-금속 캐패시터 및 그 제조 방법 |
| US6964908B2 (en) * | 2003-08-19 | 2005-11-15 | International Business Machines Corporation | Metal-insulator-metal capacitor and method of fabricating same |
| JP2005191182A (ja) * | 2003-12-25 | 2005-07-14 | Nec Electronics Corp | 半導体装置及びその製造方法 |
| JP4308691B2 (ja) * | 2004-03-19 | 2009-08-05 | 富士通マイクロエレクトロニクス株式会社 | 半導体基板および半導体基板の製造方法 |
| US7351448B1 (en) * | 2004-07-27 | 2008-04-01 | The United States Of America As Represented By The Secretary Of The Navy | Anti-reflective coating on patterned metals or metallic surfaces |
| KR100644046B1 (ko) * | 2004-12-29 | 2006-11-10 | 동부일렉트로닉스 주식회사 | 반도체 소자의 커패시터 제조방법 |
| US7217643B2 (en) * | 2005-02-24 | 2007-05-15 | Freescale Semiconductors, Inc. | Semiconductor structures and methods for fabricating semiconductor structures comprising high dielectric constant stacked structures |
| JP4461386B2 (ja) * | 2005-10-31 | 2010-05-12 | Tdk株式会社 | 薄膜デバイスおよびその製造方法 |
| US7483258B2 (en) * | 2005-12-13 | 2009-01-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | MIM capacitor in a copper damascene interconnect |
| KR20070075018A (ko) * | 2006-01-11 | 2007-07-18 | 삼성전자주식회사 | 반도체 소자의 제조 방법 |
| JP4977400B2 (ja) * | 2006-05-09 | 2012-07-18 | 日本電気株式会社 | 半導体装置及びその製造方法 |
| WO2008010028A1 (en) * | 2006-06-15 | 2008-01-24 | Freescale Semiconductor, Inc. | Mim capacitor integration |
| US7488643B2 (en) * | 2006-06-21 | 2009-02-10 | International Business Machines Corporation | MIM capacitor and method of making same |
| US7582549B2 (en) | 2006-08-25 | 2009-09-01 | Micron Technology, Inc. | Atomic layer deposited barium strontium titanium oxide films |
| JP4953877B2 (ja) * | 2006-08-30 | 2012-06-13 | 京セラ株式会社 | コンデンサ及び高周波部品 |
| US8106856B2 (en) | 2006-09-06 | 2012-01-31 | Apple Inc. | Portable electronic device for photo management |
| KR100869751B1 (ko) * | 2007-09-07 | 2008-11-21 | 주식회사 동부하이텍 | 반도체 소자와 그의 제조방법 |
| KR20090070447A (ko) * | 2007-12-27 | 2009-07-01 | 주식회사 동부하이텍 | 반도체 소자 및 그 제조 방법 |
| JP5502302B2 (ja) * | 2008-09-26 | 2014-05-28 | ローム株式会社 | 半導体装置およびその製造方法 |
| JP5396943B2 (ja) * | 2009-03-16 | 2014-01-22 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
| US8298902B2 (en) | 2009-03-18 | 2012-10-30 | International Business Machines Corporation | Interconnect structures, methods for fabricating interconnect structures, and design structures for a radiofrequency integrated circuit |
| JP4802286B2 (ja) * | 2009-08-28 | 2011-10-26 | 富士フイルム株式会社 | 光電変換素子及び撮像素子 |
| WO2011037558A1 (en) | 2009-09-22 | 2011-03-31 | Apple Inc. | Device, method, and graphical user interface for manipulating user interface objects |
| US8780069B2 (en) | 2009-09-25 | 2014-07-15 | Apple Inc. | Device, method, and graphical user interface for manipulating user interface objects |
| US8698762B2 (en) | 2010-01-06 | 2014-04-15 | Apple Inc. | Device, method, and graphical user interface for navigating and displaying content in context |
| JP5956106B2 (ja) * | 2010-08-27 | 2016-07-20 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| FR2971362B1 (fr) * | 2011-02-04 | 2013-09-06 | St Microelectronics Crolles 2 | Procédé de fabrication d'un condensateur tin/ta2o5/tin |
| CN102254821B (zh) * | 2011-07-11 | 2012-12-19 | 中国科学院上海微系统与信息技术研究所 | 基于soi材料的mos电容器及其制作方法 |
| CN102437024B (zh) * | 2011-11-30 | 2013-12-04 | 上海华力微电子有限公司 | 一种多层金属-氧化硅-金属电容的制作方法 |
| CN102394216B (zh) * | 2011-11-30 | 2013-12-18 | 上海华力微电子有限公司 | 一种金属-氧化物-金属电容的制作方法 |
| CN102394217B (zh) * | 2011-11-30 | 2013-11-13 | 上海华力微电子有限公司 | 一种金属-氮化硅-金属电容的制作方法 |
| US8980723B2 (en) * | 2012-06-15 | 2015-03-17 | Texas Instruments Incorporated | Multiple depth vias in an integrated circuit |
| US8906773B2 (en) * | 2012-12-12 | 2014-12-09 | Freescale Semiconductor, Inc. | Integrated circuits including integrated passive devices and methods of manufacture thereof |
| CN103346067B (zh) * | 2013-06-26 | 2017-02-22 | 上海华虹宏力半导体制造有限公司 | 半导体器件的形成方法、mim电容的形成方法 |
| US10515949B2 (en) | 2013-10-17 | 2019-12-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integrated circuit and manufacturing method thereof |
| US10497773B2 (en) | 2014-03-31 | 2019-12-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method to improve MIM device performance |
| US9391016B2 (en) * | 2014-04-10 | 2016-07-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | MIM capacitor structure |
| US9219110B2 (en) | 2014-04-10 | 2015-12-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | MIM capacitor structure |
| US9368392B2 (en) | 2014-04-10 | 2016-06-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | MIM capacitor structure |
| US9425061B2 (en) | 2014-05-29 | 2016-08-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Buffer cap layer to improve MIM structure performance |
| US9257498B1 (en) | 2014-08-04 | 2016-02-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Process to improve performance for metal-insulator-metal (MIM) capacitors |
| US9793339B2 (en) * | 2015-01-08 | 2017-10-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for preventing copper contamination in metal-insulator-metal (MIM) capacitors |
| US11038010B2 (en) * | 2015-01-29 | 2021-06-15 | Taiwan Semiconductor Manufacturing Company Limited | Capacitor structure and method of making the same |
| TWI622176B (zh) * | 2015-12-04 | 2018-04-21 | 力晶科技股份有限公司 | Mim電容之結構及其製造方法 |
| AU2017100670C4 (en) | 2016-06-12 | 2019-11-21 | Apple Inc. | User interfaces for retrieving contextually relevant media content |
| US10324973B2 (en) | 2016-06-12 | 2019-06-18 | Apple Inc. | Knowledge graph metadata network based on notable moments |
| DK201670608A1 (en) | 2016-06-12 | 2018-01-02 | Apple Inc | User interfaces for retrieving contextually relevant media content |
| US20180138263A1 (en) * | 2016-11-14 | 2018-05-17 | United Microelectronics Corp. | Semiconductor structure and method for forming the same |
| CN110959188B (zh) * | 2017-07-26 | 2023-10-03 | 株式会社村田制作所 | 电容器 |
| US20190148370A1 (en) * | 2017-11-13 | 2019-05-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Device including mim capacitor and resistor |
| CN115360164A (zh) | 2017-11-13 | 2022-11-18 | 台湾积体电路制造股份有限公司 | 包括mim电容器和电阻器的器件 |
| US20190229053A1 (en) * | 2018-01-22 | 2019-07-25 | United Microelectronics Corp. | Metal-insulator-metal capacitor structure and manufacturing method thereof |
| US10290701B1 (en) * | 2018-03-28 | 2019-05-14 | Taiwan Semiconductor Manufacturing Company Ltd. | MIM capacitor, semiconductor structure including MIM capacitors and method for manufacturing the same |
| DK180171B1 (en) | 2018-05-07 | 2020-07-14 | Apple Inc | USER INTERFACES FOR SHARING CONTEXTUALLY RELEVANT MEDIA CONTENT |
| US11086935B2 (en) | 2018-05-07 | 2021-08-10 | Apple Inc. | Smart updates from historical database changes |
| US11243996B2 (en) | 2018-05-07 | 2022-02-08 | Apple Inc. | Digital asset search user interface |
| US10846343B2 (en) | 2018-09-11 | 2020-11-24 | Apple Inc. | Techniques for disambiguating clustered location identifiers |
| US10803135B2 (en) | 2018-09-11 | 2020-10-13 | Apple Inc. | Techniques for disambiguating clustered occurrence identifiers |
| CN110970557A (zh) * | 2018-09-28 | 2020-04-07 | 中芯国际集成电路制造(上海)有限公司 | 电容器件及其形成方法 |
| KR20200055424A (ko) * | 2018-11-13 | 2020-05-21 | 삼성전기주식회사 | 인쇄회로기판 |
| WO2020196617A1 (ja) | 2019-03-26 | 2020-10-01 | 日鉄ケミカル&マテリアル株式会社 | 樹脂組成物、硬化成形物、繊維強化プラスチック成形用材料、繊維強化プラスチック、繊維強化プラスチック積層成形体及びその製造方法 |
| DK201970535A1 (en) | 2019-05-06 | 2020-12-21 | Apple Inc | Media browsing user interface with intelligently selected representative media items |
| CN112201643B (zh) * | 2019-07-08 | 2023-04-07 | 中芯国际集成电路制造(北京)有限公司 | 一种半导体器件及形成方法 |
| US11171199B2 (en) * | 2019-08-23 | 2021-11-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Metal-insulator-metal capacitors with high breakdown voltage |
| WO2021149688A1 (ja) * | 2020-01-20 | 2021-07-29 | 株式会社村田製作所 | 半導体装置及び容量装置 |
| DK202070613A1 (en) | 2020-02-14 | 2021-10-15 | Apple Inc | User interfaces for workout content |
| CN114373732A (zh) * | 2020-10-15 | 2022-04-19 | 中芯国际集成电路制造(上海)有限公司 | 电容结构及电容结构的形成方法 |
| US20230011605A1 (en) * | 2021-07-09 | 2023-01-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Metal-insulator-metal (mim) capacitor and method of making same |
| CN113517400B (zh) | 2021-09-13 | 2021-12-31 | 广州粤芯半导体技术有限公司 | 金属电容结构及其制备方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040002188A1 (en) * | 2002-06-28 | 2004-01-01 | Chung Yi Sun | Method for fabricating MIM capacitor |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5747361A (en) * | 1991-05-01 | 1998-05-05 | Mitel Corporation | Stabilization of the interface between aluminum and titanium nitride |
| DE69404189T2 (de) * | 1993-03-31 | 1998-01-08 | Texas Instruments Inc | Leicht donatoren-dotierte Elektroden für Materialien mit hoher dielektrischer Konstante |
| US5759916A (en) * | 1996-06-24 | 1998-06-02 | Taiwan Semiconductor Manufacturing Company Ltd | Method for forming a void-free titanium nitride anti-reflective coating(ARC) layer upon an aluminum containing conductor layer |
| US6005277A (en) * | 1996-07-15 | 1999-12-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | ARC layer enhancement for reducing metal loss during via etch |
| JP3671607B2 (ja) * | 1997-06-24 | 2005-07-13 | ソニー株式会社 | 半導体装置およびその製造方法 |
| KR100287180B1 (ko) * | 1998-09-17 | 2001-04-16 | 윤종용 | 계면 조절층을 이용하여 금속 배선층을 형성하는 반도체 소자의 제조 방법 |
| US6340827B1 (en) * | 1999-01-13 | 2002-01-22 | Agere Systems Guardian Corp. | Diffusion barrier for use with high dielectric constant materials and electronic devices incorporating same |
| US6099701A (en) * | 1999-06-28 | 2000-08-08 | Taiwan Semiconductor Manufacturing Company | AlCu electromigration (EM) resistance |
| JP2002043517A (ja) * | 2000-07-21 | 2002-02-08 | Sony Corp | 半導体装置およびその製造方法 |
| JP4228560B2 (ja) * | 2000-11-01 | 2009-02-25 | ソニー株式会社 | キャパシタ素子及びその製造方法 |
| JP2002141472A (ja) * | 2000-11-06 | 2002-05-17 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| US20030011043A1 (en) * | 2001-07-14 | 2003-01-16 | Roberts Douglas R. | MIM capacitor structure and process for making the same |
| US6982230B2 (en) * | 2002-11-08 | 2006-01-03 | International Business Machines Corporation | Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures |
-
2003
- 2003-09-23 US US10/668,694 patent/US7078785B2/en not_active Expired - Fee Related
-
2004
- 2004-08-31 JP JP2006526914A patent/JP2007515775A/ja active Pending
- 2004-08-31 KR KR1020067005772A patent/KR101054673B1/ko not_active Expired - Fee Related
- 2004-08-31 EP EP04782692A patent/EP1668673A2/en not_active Withdrawn
- 2004-08-31 CN CN2004800238654A patent/CN101160663B/zh not_active Expired - Fee Related
- 2004-08-31 WO PCT/US2004/028262 patent/WO2005036597A2/en not_active Ceased
- 2004-09-10 TW TW093127560A patent/TWI349367B/zh not_active IP Right Cessation
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040002188A1 (en) * | 2002-06-28 | 2004-01-01 | Chung Yi Sun | Method for fabricating MIM capacitor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101160663A (zh) | 2008-04-09 |
| TWI349367B (en) | 2011-09-21 |
| US20050062130A1 (en) | 2005-03-24 |
| JP2007515775A (ja) | 2007-06-14 |
| TW200518338A (en) | 2005-06-01 |
| KR20070017953A (ko) | 2007-02-13 |
| WO2005036597A2 (en) | 2005-04-21 |
| US7078785B2 (en) | 2006-07-18 |
| EP1668673A2 (en) | 2006-06-14 |
| WO2005036597A3 (en) | 2007-12-06 |
| CN101160663B (zh) | 2010-10-27 |
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