TWI349367B - Semiconductor device and making thereof - Google Patents

Semiconductor device and making thereof

Info

Publication number
TWI349367B
TWI349367B TW093127560A TW93127560A TWI349367B TW I349367 B TWI349367 B TW I349367B TW 093127560 A TW093127560 A TW 093127560A TW 93127560 A TW93127560 A TW 93127560A TW I349367 B TWI349367 B TW I349367B
Authority
TW
Taiwan
Prior art keywords
making
semiconductor device
semiconductor
Prior art date
Application number
TW093127560A
Other languages
English (en)
Chinese (zh)
Other versions
TW200518338A (en
Inventor
Anthony Ciancio
Mark D Griswold
Amudha R Irudayam
Jennifer H Morrison
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of TW200518338A publication Critical patent/TW200518338A/zh
Application granted granted Critical
Publication of TWI349367B publication Critical patent/TWI349367B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/696—Electrodes comprising multiple layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5223—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/694—Electrodes comprising noble metals or noble metal oxides

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW093127560A 2003-09-23 2004-09-10 Semiconductor device and making thereof TWI349367B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/668,694 US7078785B2 (en) 2003-09-23 2003-09-23 Semiconductor device and making thereof

Publications (2)

Publication Number Publication Date
TW200518338A TW200518338A (en) 2005-06-01
TWI349367B true TWI349367B (en) 2011-09-21

Family

ID=34313543

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093127560A TWI349367B (en) 2003-09-23 2004-09-10 Semiconductor device and making thereof

Country Status (7)

Country Link
US (1) US7078785B2 (enExample)
EP (1) EP1668673A2 (enExample)
JP (1) JP2007515775A (enExample)
KR (1) KR101054673B1 (enExample)
CN (1) CN101160663B (enExample)
TW (1) TWI349367B (enExample)
WO (1) WO2005036597A2 (enExample)

Families Citing this family (69)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100539198B1 (ko) * 2003-03-10 2005-12-27 삼성전자주식회사 금속-절연체-금속 캐패시터 및 그 제조 방법
US6964908B2 (en) * 2003-08-19 2005-11-15 International Business Machines Corporation Metal-insulator-metal capacitor and method of fabricating same
JP2005191182A (ja) * 2003-12-25 2005-07-14 Nec Electronics Corp 半導体装置及びその製造方法
JP4308691B2 (ja) * 2004-03-19 2009-08-05 富士通マイクロエレクトロニクス株式会社 半導体基板および半導体基板の製造方法
US7351448B1 (en) * 2004-07-27 2008-04-01 The United States Of America As Represented By The Secretary Of The Navy Anti-reflective coating on patterned metals or metallic surfaces
KR100644046B1 (ko) * 2004-12-29 2006-11-10 동부일렉트로닉스 주식회사 반도체 소자의 커패시터 제조방법
US7217643B2 (en) * 2005-02-24 2007-05-15 Freescale Semiconductors, Inc. Semiconductor structures and methods for fabricating semiconductor structures comprising high dielectric constant stacked structures
JP4461386B2 (ja) * 2005-10-31 2010-05-12 Ｔｄｋ株式会社 薄膜デバイスおよびその製造方法
US7483258B2 (en) * 2005-12-13 2009-01-27 Taiwan Semiconductor Manufacturing Co., Ltd. MIM capacitor in a copper damascene interconnect
KR20070075018A (ko) * 2006-01-11 2007-07-18 삼성전자주식회사 반도체 소자의 제조 방법
JP4977400B2 (ja) * 2006-05-09 2012-07-18 日本電気株式会社 半導体装置及びその製造方法
WO2008010028A1 (en) * 2006-06-15 2008-01-24 Freescale Semiconductor, Inc. Mim capacitor integration
US7488643B2 (en) * 2006-06-21 2009-02-10 International Business Machines Corporation MIM capacitor and method of making same
US7582549B2 (en) 2006-08-25 2009-09-01 Micron Technology, Inc. Atomic layer deposited barium strontium titanium oxide films
JP4953877B2 (ja) * 2006-08-30 2012-06-13 京セラ株式会社 コンデンサ及び高周波部品
US8106856B2 (en) 2006-09-06 2012-01-31 Apple Inc. Portable electronic device for photo management
KR100869751B1 (ko) * 2007-09-07 2008-11-21 주식회사 동부하이텍 반도체 소자와 그의 제조방법
KR20090070447A (ko) * 2007-12-27 2009-07-01 주식회사 동부하이텍 반도체 소자 및 그 제조 방법
JP5502302B2 (ja) * 2008-09-26 2014-05-28 ローム株式会社 半導体装置およびその製造方法
JP5396943B2 (ja) * 2009-03-16 2014-01-22 富士通セミコンダクター株式会社 半導体装置及びその製造方法
US8298902B2 (en) 2009-03-18 2012-10-30 International Business Machines Corporation Interconnect structures, methods for fabricating interconnect structures, and design structures for a radiofrequency integrated circuit
JP4802286B2 (ja) * 2009-08-28 2011-10-26 富士フイルム株式会社 光電変換素子及び撮像素子
WO2011037558A1 (en) 2009-09-22 2011-03-31 Apple Inc. Device, method, and graphical user interface for manipulating user interface objects
US8780069B2 (en) 2009-09-25 2014-07-15 Apple Inc. Device, method, and graphical user interface for manipulating user interface objects
US8698762B2 (en) 2010-01-06 2014-04-15 Apple Inc. Device, method, and graphical user interface for navigating and displaying content in context
JP5956106B2 (ja) * 2010-08-27 2016-07-20 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
FR2971362B1 (fr) * 2011-02-04 2013-09-06 St Microelectronics Crolles 2 Procédé de fabrication d'un condensateur tin/ta2o5/tin
CN102254821B (zh) * 2011-07-11 2012-12-19 中国科学院上海微系统与信息技术研究所 基于soi材料的mos电容器及其制作方法
CN102437024B (zh) * 2011-11-30 2013-12-04 上海华力微电子有限公司 一种多层金属-氧化硅-金属电容的制作方法
CN102394216B (zh) * 2011-11-30 2013-12-18 上海华力微电子有限公司 一种金属-氧化物-金属电容的制作方法
CN102394217B (zh) * 2011-11-30 2013-11-13 上海华力微电子有限公司 一种金属-氮化硅-金属电容的制作方法
US8980723B2 (en) * 2012-06-15 2015-03-17 Texas Instruments Incorporated Multiple depth vias in an integrated circuit
US8906773B2 (en) * 2012-12-12 2014-12-09 Freescale Semiconductor, Inc. Integrated circuits including integrated passive devices and methods of manufacture thereof
CN103346067B (zh) * 2013-06-26 2017-02-22 上海华虹宏力半导体制造有限公司 半导体器件的形成方法、mim电容的形成方法
US10515949B2 (en) 2013-10-17 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit and manufacturing method thereof
US10497773B2 (en) 2014-03-31 2019-12-03 Taiwan Semiconductor Manufacturing Co., Ltd. Method to improve MIM device performance
US9391016B2 (en) * 2014-04-10 2016-07-12 Taiwan Semiconductor Manufacturing Co., Ltd. MIM capacitor structure
US9219110B2 (en) 2014-04-10 2015-12-22 Taiwan Semiconductor Manufacturing Co., Ltd. MIM capacitor structure
US9368392B2 (en) 2014-04-10 2016-06-14 Taiwan Semiconductor Manufacturing Co., Ltd. MIM capacitor structure
US9425061B2 (en) 2014-05-29 2016-08-23 Taiwan Semiconductor Manufacturing Co., Ltd. Buffer cap layer to improve MIM structure performance
US9257498B1 (en) 2014-08-04 2016-02-09 Taiwan Semiconductor Manufacturing Co., Ltd. Process to improve performance for metal-insulator-metal (MIM) capacitors
US9793339B2 (en) * 2015-01-08 2017-10-17 Taiwan Semiconductor Manufacturing Co., Ltd. Method for preventing copper contamination in metal-insulator-metal (MIM) capacitors
US11038010B2 (en) * 2015-01-29 2021-06-15 Taiwan Semiconductor Manufacturing Company Limited Capacitor structure and method of making the same
TWI622176B (zh) * 2015-12-04 2018-04-21 力晶科技股份有限公司 Ｍｉｍ電容之結構及其製造方法
AU2017100670C4 (en) 2016-06-12 2019-11-21 Apple Inc. User interfaces for retrieving contextually relevant media content
US10324973B2 (en) 2016-06-12 2019-06-18 Apple Inc. Knowledge graph metadata network based on notable moments
DK201670608A1 (en) 2016-06-12 2018-01-02 Apple Inc User interfaces for retrieving contextually relevant media content
US20180138263A1 (en) * 2016-11-14 2018-05-17 United Microelectronics Corp. Semiconductor structure and method for forming the same
CN110959188B (zh) * 2017-07-26 2023-10-03 株式会社村田制作所 电容器
US20190148370A1 (en) * 2017-11-13 2019-05-16 Taiwan Semiconductor Manufacturing Co., Ltd. Device including mim capacitor and resistor
CN115360164A (zh) 2017-11-13 2022-11-18 台湾积体电路制造股份有限公司 包括mim电容器和电阻器的器件
US20190229053A1 (en) * 2018-01-22 2019-07-25 United Microelectronics Corp. Metal-insulator-metal capacitor structure and manufacturing method thereof
US10290701B1 (en) * 2018-03-28 2019-05-14 Taiwan Semiconductor Manufacturing Company Ltd. MIM capacitor, semiconductor structure including MIM capacitors and method for manufacturing the same
DK180171B1 (en) 2018-05-07 2020-07-14 Apple Inc USER INTERFACES FOR SHARING CONTEXTUALLY RELEVANT MEDIA CONTENT
US11086935B2 (en) 2018-05-07 2021-08-10 Apple Inc. Smart updates from historical database changes
US11243996B2 (en) 2018-05-07 2022-02-08 Apple Inc. Digital asset search user interface
US10846343B2 (en) 2018-09-11 2020-11-24 Apple Inc. Techniques for disambiguating clustered location identifiers
US10803135B2 (en) 2018-09-11 2020-10-13 Apple Inc. Techniques for disambiguating clustered occurrence identifiers
CN110970557A (zh) * 2018-09-28 2020-04-07 中芯国际集成电路制造(上海)有限公司 电容器件及其形成方法
KR20200055424A (ko) * 2018-11-13 2020-05-21 삼성전기주식회사 인쇄회로기판
WO2020196617A1 (ja) 2019-03-26 2020-10-01 日鉄ケミカル＆マテリアル株式会社 樹脂組成物、硬化成形物、繊維強化プラスチック成形用材料、繊維強化プラスチック、繊維強化プラスチック積層成形体及びその製造方法
DK201970535A1 (en) 2019-05-06 2020-12-21 Apple Inc Media browsing user interface with intelligently selected representative media items
CN112201643B (zh) * 2019-07-08 2023-04-07 中芯国际集成电路制造(北京)有限公司 一种半导体器件及形成方法
US11171199B2 (en) * 2019-08-23 2021-11-09 Taiwan Semiconductor Manufacturing Co., Ltd. Metal-insulator-metal capacitors with high breakdown voltage
WO2021149688A1 (ja) * 2020-01-20 2021-07-29 株式会社村田製作所 半導体装置及び容量装置
DK202070613A1 (en) 2020-02-14 2021-10-15 Apple Inc User interfaces for workout content
CN114373732A (zh) * 2020-10-15 2022-04-19 中芯国际集成电路制造(上海)有限公司 电容结构及电容结构的形成方法
US20230011605A1 (en) * 2021-07-09 2023-01-12 Taiwan Semiconductor Manufacturing Company, Ltd. Metal-insulator-metal (mim) capacitor and method of making same
CN113517400B (zh) 2021-09-13 2021-12-31 广州粤芯半导体技术有限公司 金属电容结构及其制备方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5747361A (en) * 1991-05-01 1998-05-05 Mitel Corporation Stabilization of the interface between aluminum and titanium nitride
DE69404189T2 (de) * 1993-03-31 1998-01-08 Texas Instruments Inc Leicht donatoren-dotierte Elektroden für Materialien mit hoher dielektrischer Konstante
US5759916A (en) * 1996-06-24 1998-06-02 Taiwan Semiconductor Manufacturing Company Ltd Method for forming a void-free titanium nitride anti-reflective coating(ARC) layer upon an aluminum containing conductor layer
US6005277A (en) * 1996-07-15 1999-12-21 Taiwan Semiconductor Manufacturing Company, Ltd. ARC layer enhancement for reducing metal loss during via etch
JP3671607B2 (ja) * 1997-06-24 2005-07-13 ソニー株式会社 半導体装置およびその製造方法
KR100287180B1 (ko) * 1998-09-17 2001-04-16 윤종용 계면 조절층을 이용하여 금속 배선층을 형성하는 반도체 소자의 제조 방법
US6340827B1 (en) * 1999-01-13 2002-01-22 Agere Systems Guardian Corp. Diffusion barrier for use with high dielectric constant materials and electronic devices incorporating same
US6099701A (en) * 1999-06-28 2000-08-08 Taiwan Semiconductor Manufacturing Company AlCu electromigration (EM) resistance
JP2002043517A (ja) * 2000-07-21 2002-02-08 Sony Corp 半導体装置およびその製造方法
JP4228560B2 (ja) * 2000-11-01 2009-02-25 ソニー株式会社 キャパシタ素子及びその製造方法
JP2002141472A (ja) * 2000-11-06 2002-05-17 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US20030011043A1 (en) * 2001-07-14 2003-01-16 Roberts Douglas R. MIM capacitor structure and process for making the same
KR100818058B1 (ko) * 2002-06-28 2008-03-31 매그나칩 반도체 유한회사 엠아이엠 캐패시터 형성방법
US6982230B2 (en) * 2002-11-08 2006-01-03 International Business Machines Corporation Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures

Also Published As

Publication number Publication date
CN101160663A (zh) 2008-04-09
US20050062130A1 (en) 2005-03-24
JP2007515775A (ja) 2007-06-14
KR101054673B1 (ko) 2011-08-08
TW200518338A (en) 2005-06-01
KR20070017953A (ko) 2007-02-13
WO2005036597A2 (en) 2005-04-21
US7078785B2 (en) 2006-07-18
EP1668673A2 (en) 2006-06-14
WO2005036597A3 (en) 2007-12-06
CN101160663B (zh) 2010-10-27

Similar Documents

Publication Publication Date Title
TWI349367B (en) Semiconductor device and making thereof
TWI340471B (en) Semiconductor device and manufacturing method thereof
AU2003226646A8 (en) Semiconductor device
EP1624358A4 (en) SEMICONDUCTOR COMPONENT
TWI319261B (en) Semiconductor device
AU2003234812A8 (en) Semiconductor device
GB0320642D0 (en) Sensing devices and sensing circuits
SI1521617T1 (sl) Naprava za zaščito pred požarom
TW562215U (en) Exhibiting device
AU2003260760A8 (en) Device
GB0312512D0 (en) Termination structures for semiconductor devices and the manufacture thereof
AU2003245720A8 (en) Electroptic device
TWI348216B (en) Manufacturing method for semiconductor device and semiconductor device
GB2406970B (en) Semiconductor device
EP1619570A4 (en) SEMICONDUCTOR COMPONENT
GB0707819D0 (en) Semiconductor device and manufacturing method thereof
GB0202064D0 (en) Device
GB0216290D0 (en) Device
GB0312514D0 (en) Termination structures for semiconductor devices and the manufacture thereof
GB2385398B (en) Device
GB0315982D0 (en) Semiconductor device
TWI348752B (en) Semiconductor device
GB0200485D0 (en) Strap-securing device
TWI346369B (en) Semiconductor device
GB2400491B (en) Semiconductor devices

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees