JP2007515775A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
JP2007515775A
JP2007515775A JP2006526914A JP2006526914A JP2007515775A JP 2007515775 A JP2007515775 A JP 2007515775A JP 2006526914 A JP2006526914 A JP 2006526914A JP 2006526914 A JP2006526914 A JP 2006526914A JP 2007515775 A JP2007515775 A JP 2007515775A
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Japan
Prior art keywords
layer
semiconductor device
electrode
conductive
nitride
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JP2006526914A
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English (en)
Japanese (ja)
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JP2007515775A5 (enExample
Inventor
シアンシオ、アンソニー
ディー． グリスウォルド、マーク
アール． イルダヤム、アムダハ
エイチ． モリソン、ジェニファー
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NXP USA Inc
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NXP USA Inc
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Publication of JP2007515775A publication Critical patent/JP2007515775A/ja
Publication of JP2007515775A5 publication Critical patent/JP2007515775A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/696—Electrodes comprising multiple layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5223—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/694—Electrodes comprising noble metals or noble metal oxides

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2006526914A 2003-09-23 2004-08-31 半導体装置及びその製造方法 Pending JP2007515775A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/668,694 US7078785B2 (en) 2003-09-23 2003-09-23 Semiconductor device and making thereof
PCT/US2004/028262 WO2005036597A2 (en) 2003-09-23 2004-08-31 Semiconductor device and making thereof

Publications (2)

Publication Number Publication Date
JP2007515775A true JP2007515775A (ja) 2007-06-14
JP2007515775A5 JP2007515775A5 (enExample) 2007-09-06

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ID=34313543

Family Applications (1)

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JP2006526914A Pending JP2007515775A (ja) 2003-09-23 2004-08-31 半導体装置及びその製造方法

Country Status (7)

Country Link
US (1) US7078785B2 (enExample)
EP (1) EP1668673A2 (enExample)
JP (1) JP2007515775A (enExample)
KR (1) KR101054673B1 (enExample)
CN (1) CN101160663B (enExample)
TW (1) TWI349367B (enExample)
WO (1) WO2005036597A2 (enExample)

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JP2010219229A (ja) * 2009-03-16 2010-09-30 Fujitsu Semiconductor Ltd 半導体装置及びその製造方法
US8680599B2 (en) 2010-08-27 2014-03-25 Renesas Electronics Corporation Semiconductor device and method of manufacturing the same
JP2014120770A (ja) * 2012-12-12 2014-06-30 Freescale Semiconductor Inc 集積型受動素子を含む集積回路およびその製造方法
US9459792B2 (en) 2006-09-06 2016-10-04 Apple Inc. Portable electronic device for photo management
US10073584B2 (en) 2016-06-12 2018-09-11 Apple Inc. User interfaces for retrieving contextually relevant media content
US10296166B2 (en) 2010-01-06 2019-05-21 Apple Inc. Device, method, and graphical user interface for navigating and displaying content in context
US10324973B2 (en) 2016-06-12 2019-06-18 Apple Inc. Knowledge graph metadata network based on notable moments
US10564826B2 (en) 2009-09-22 2020-02-18 Apple Inc. Device, method, and graphical user interface for manipulating user interface objects
US10803135B2 (en) 2018-09-11 2020-10-13 Apple Inc. Techniques for disambiguating clustered occurrence identifiers
US10846343B2 (en) 2018-09-11 2020-11-24 Apple Inc. Techniques for disambiguating clustered location identifiers
JP2021101480A (ja) * 2017-07-26 2021-07-08 株式会社村田製作所 キャパシタ
US11086935B2 (en) 2018-05-07 2021-08-10 Apple Inc. Smart updates from historical database changes
US11243996B2 (en) 2018-05-07 2022-02-08 Apple Inc. Digital asset search user interface
US11307737B2 (en) 2019-05-06 2022-04-19 Apple Inc. Media browsing user interface with intelligently selected representative media items
US11334209B2 (en) 2016-06-12 2022-05-17 Apple Inc. User interfaces for retrieving contextually relevant media content
US11334229B2 (en) 2009-09-22 2022-05-17 Apple Inc. Device, method, and graphical user interface for manipulating user interface objects
US11446548B2 (en) 2020-02-14 2022-09-20 Apple Inc. User interfaces for workout content
US11782575B2 (en) 2018-05-07 2023-10-10 Apple Inc. User interfaces for sharing contextually relevant media content

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US6964908B2 (en) * 2003-08-19 2005-11-15 International Business Machines Corporation Metal-insulator-metal capacitor and method of fabricating same
JP2005191182A (ja) * 2003-12-25 2005-07-14 Nec Electronics Corp 半導体装置及びその製造方法
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JP5502302B2 (ja) * 2008-09-26 2014-05-28 ローム株式会社 半導体装置およびその製造方法
US8298902B2 (en) * 2009-03-18 2012-10-30 International Business Machines Corporation Interconnect structures, methods for fabricating interconnect structures, and design structures for a radiofrequency integrated circuit
JP4802286B2 (ja) * 2009-08-28 2011-10-26 富士フイルム株式会社 光電変換素子及び撮像素子
FR2971362B1 (fr) * 2011-02-04 2013-09-06 St Microelectronics Crolles 2 Procédé de fabrication d'un condensateur tin/ta2o5/tin
CN102254821B (zh) * 2011-07-11 2012-12-19 中国科学院上海微系统与信息技术研究所 基于soi材料的mos电容器及其制作方法
CN102437024B (zh) * 2011-11-30 2013-12-04 上海华力微电子有限公司 一种多层金属-氧化硅-金属电容的制作方法
CN102394217B (zh) * 2011-11-30 2013-11-13 上海华力微电子有限公司 一种金属-氮化硅-金属电容的制作方法
CN102394216B (zh) * 2011-11-30 2013-12-18 上海华力微电子有限公司 一种金属-氧化物-金属电容的制作方法
US8980723B2 (en) 2012-06-15 2015-03-17 Texas Instruments Incorporated Multiple depth vias in an integrated circuit
CN103346067B (zh) * 2013-06-26 2017-02-22 上海华虹宏力半导体制造有限公司 半导体器件的形成方法、mim电容的形成方法
US10515949B2 (en) 2013-10-17 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit and manufacturing method thereof
US10497773B2 (en) 2014-03-31 2019-12-03 Taiwan Semiconductor Manufacturing Co., Ltd. Method to improve MIM device performance
US9391016B2 (en) * 2014-04-10 2016-07-12 Taiwan Semiconductor Manufacturing Co., Ltd. MIM capacitor structure
US9219110B2 (en) 2014-04-10 2015-12-22 Taiwan Semiconductor Manufacturing Co., Ltd. MIM capacitor structure
US9368392B2 (en) 2014-04-10 2016-06-14 Taiwan Semiconductor Manufacturing Co., Ltd. MIM capacitor structure
US9425061B2 (en) 2014-05-29 2016-08-23 Taiwan Semiconductor Manufacturing Co., Ltd. Buffer cap layer to improve MIM structure performance
US9257498B1 (en) 2014-08-04 2016-02-09 Taiwan Semiconductor Manufacturing Co., Ltd. Process to improve performance for metal-insulator-metal (MIM) capacitors
US9793339B2 (en) * 2015-01-08 2017-10-17 Taiwan Semiconductor Manufacturing Co., Ltd. Method for preventing copper contamination in metal-insulator-metal (MIM) capacitors
US11038010B2 (en) * 2015-01-29 2021-06-15 Taiwan Semiconductor Manufacturing Company Limited Capacitor structure and method of making the same
TWI622176B (zh) * 2015-12-04 2018-04-21 力晶科技股份有限公司 Ｍｉｍ電容之結構及其製造方法
US20180138263A1 (en) * 2016-11-14 2018-05-17 United Microelectronics Corp. Semiconductor structure and method for forming the same
US20190148370A1 (en) * 2017-11-13 2019-05-16 Taiwan Semiconductor Manufacturing Co., Ltd. Device including mim capacitor and resistor
CN115360164A (zh) 2017-11-13 2022-11-18 台湾积体电路制造股份有限公司 包括mim电容器和电阻器的器件
US20190229053A1 (en) * 2018-01-22 2019-07-25 United Microelectronics Corp. Metal-insulator-metal capacitor structure and manufacturing method thereof
US10290701B1 (en) * 2018-03-28 2019-05-14 Taiwan Semiconductor Manufacturing Company Ltd. MIM capacitor, semiconductor structure including MIM capacitors and method for manufacturing the same
CN110970557A (zh) * 2018-09-28 2020-04-07 中芯国际集成电路制造(上海)有限公司 电容器件及其形成方法
KR20200055424A (ko) * 2018-11-13 2020-05-21 삼성전기주식회사 인쇄회로기판
WO2020196617A1 (ja) 2019-03-26 2020-10-01 日鉄ケミカル＆マテリアル株式会社 樹脂組成物、硬化成形物、繊維強化プラスチック成形用材料、繊維強化プラスチック、繊維強化プラスチック積層成形体及びその製造方法
CN112201643B (zh) * 2019-07-08 2023-04-07 中芯国际集成电路制造(北京)有限公司 一种半导体器件及形成方法
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CN114981904B (zh) * 2020-01-20 2024-07-05 株式会社村田制作所 半导体装置以及电容装置
CN114373732A (zh) * 2020-10-15 2022-04-19 中芯国际集成电路制造(上海)有限公司 电容结构及电容结构的形成方法
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US10356309B2 (en) 2006-09-06 2019-07-16 Apple Inc. Portable electronic device for photo management
JP2010219229A (ja) * 2009-03-16 2010-09-30 Fujitsu Semiconductor Ltd 半導体装置及びその製造方法
US10788965B2 (en) 2009-09-22 2020-09-29 Apple Inc. Device, method, and graphical user interface for manipulating user interface objects
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US8680599B2 (en) 2010-08-27 2014-03-25 Renesas Electronics Corporation Semiconductor device and method of manufacturing the same
JP2014120770A (ja) * 2012-12-12 2014-06-30 Freescale Semiconductor Inc 集積型受動素子を含む集積回路およびその製造方法
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US10846343B2 (en) 2018-09-11 2020-11-24 Apple Inc. Techniques for disambiguating clustered location identifiers
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Also Published As

Publication number Publication date
KR101054673B1 (ko) 2011-08-08
WO2005036597A2 (en) 2005-04-21
US20050062130A1 (en) 2005-03-24
WO2005036597A3 (en) 2007-12-06
CN101160663B (zh) 2010-10-27
US7078785B2 (en) 2006-07-18
KR20070017953A (ko) 2007-02-13
TW200518338A (en) 2005-06-01
EP1668673A2 (en) 2006-06-14
CN101160663A (zh) 2008-04-09
TWI349367B (en) 2011-09-21

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