KR101020846B1 - 비휘발성 반도체 메모리 및 그 구동방법 - Google Patents

비휘발성 반도체 메모리 및 그 구동방법 Download PDF

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Publication number
KR101020846B1
KR101020846B1 KR1020097000601A KR20097000601A KR101020846B1 KR 101020846 B1 KR101020846 B1 KR 101020846B1 KR 1020097000601 A KR1020097000601 A KR 1020097000601A KR 20097000601 A KR20097000601 A KR 20097000601A KR 101020846 B1 KR101020846 B1 KR 101020846B1
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South Korea
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nonvolatile semiconductor
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semiconductor memory
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KR1020097000601A
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KR20090031416A (ko
Inventor
후지오 마스오카
히로키 나카무라
Original Assignee
고쿠리츠다이가쿠호진 도호쿠다이가쿠
니혼 유니산티스 에렉트로닉스 가부시키가이샤
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Publication of KR20090031416A publication Critical patent/KR20090031416A/ko
Application granted granted Critical
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Assigned to 유니산티스 일렉트로닉스 싱가포르 프라이빗 리미티드 reassignment 유니산티스 일렉트로닉스 싱가포르 프라이빗 리미티드 권리지분의 전부이전등록 Assignors: 니혼 유니산티스 에렉트로닉스 가부시키가이샤
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/689—Vertical floating-gate IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/693—Vertical IGFETs having charge trapping gate insulators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/10—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/10—EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
KR1020097000601A 2006-07-12 2007-07-12 비휘발성 반도체 메모리 및 그 구동방법 Expired - Fee Related KR101020846B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2006-191470 2006-07-12
JP2006191470A JP5088465B2 (ja) 2006-07-12 2006-07-12 不揮発性半導体メモリ

Publications (2)

Publication Number Publication Date
KR20090031416A KR20090031416A (ko) 2009-03-25
KR101020846B1 true KR101020846B1 (ko) 2011-03-09

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Country Status (7)

Country Link
US (1) US7940574B2 (https=)
EP (2) EP2639825A3 (https=)
JP (1) JP5088465B2 (https=)
KR (1) KR101020846B1 (https=)
CN (1) CN101490837B (https=)
TW (1) TW200814068A (https=)
WO (1) WO2008007731A1 (https=)

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US7906818B2 (en) * 2008-03-13 2011-03-15 Micron Technology, Inc. Memory array with a pair of memory-cell strings to a single conductive pillar
JP5209674B2 (ja) * 2010-07-27 2013-06-12 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 不揮発性半導体メモリトランジスタ、および、不揮発性半導体メモリの製造方法
JP5209677B2 (ja) * 2010-07-29 2013-06-12 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 不揮発性半導体メモリトランジスタ、および、不揮発性半導体メモリの製造方法
US9041092B2 (en) 2012-09-07 2015-05-26 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device and method for producing the same
KR102054181B1 (ko) 2013-02-26 2019-12-10 삼성전자주식회사 수직형 메모리 장치 및 그 제조 방법
JP5707003B1 (ja) * 2013-11-07 2015-04-22 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 記憶装置、半導体装置、及び記憶装置、半導体装置の製造方法
WO2018182720A1 (en) * 2017-03-31 2018-10-04 Intel Corporation Technique for contact formation in a vertical transistor
CN109326604A (zh) * 2017-08-01 2019-02-12 华邦电子股份有限公司 三维存储器及其操作方法
CN116724354A (zh) * 2020-12-25 2023-09-08 新加坡优尼山帝斯电子私人有限公司 包含半导体元件的存储器装置
KR20230012697A (ko) * 2021-07-16 2023-01-26 에스케이하이닉스 주식회사 비휘발성 메모리 장치에 데이터를 삭제하기 위한 장치 및 방법
CN118368901B (zh) * 2024-06-18 2024-08-30 杭州积海半导体有限公司 一种三维存储器

Citations (1)

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US20050265079A1 (en) 2004-05-27 2005-12-01 Kabushiki Kaisha Toshiba Semiconductor memory device

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JP3046376B2 (ja) * 1991-03-29 2000-05-29 株式会社東芝 不揮発性半導体メモリ装置
US5386132A (en) 1992-11-02 1995-01-31 Wong; Chun C. D. Multimedia storage system with highly compact memory device
JP3743453B2 (ja) * 1993-01-27 2006-02-08 セイコーエプソン株式会社 不揮発性半導体記憶装置
JPH06296025A (ja) * 1993-04-08 1994-10-21 Nippon Steel Corp 不揮発性半導体メモリ装置
JP3392547B2 (ja) * 1994-11-21 2003-03-31 株式会社東芝 不揮発性半導体記憶装置
JPH09259591A (ja) * 1996-03-21 1997-10-03 Ricoh Co Ltd 不揮発性半導体記憶装置
US5998263A (en) * 1996-05-16 1999-12-07 Altera Corporation High-density nonvolatile memory cell
US5874760A (en) * 1997-01-22 1999-02-23 International Business Machines Corporation 4F-square memory cell having vertical floating-gate transistors with self-aligned shallow trench isolation
JP3743189B2 (ja) 1999-01-27 2006-02-08 富士通株式会社 不揮発性半導体記憶装置及びその製造方法
KR100388179B1 (ko) * 1999-02-08 2003-06-19 가부시끼가이샤 도시바 불휘발성 반도체 메모리
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JP3963677B2 (ja) * 2001-06-23 2007-08-22 富士雄 舛岡 半導体記憶装置の製造方法
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Also Published As

Publication number Publication date
CN101490837B (zh) 2010-09-29
JP5088465B2 (ja) 2012-12-05
US20090129171A1 (en) 2009-05-21
EP2043145A4 (en) 2010-11-10
EP2639825A2 (en) 2013-09-18
TW200814068A (en) 2008-03-16
US7940574B2 (en) 2011-05-10
EP2639825A3 (en) 2013-10-16
KR20090031416A (ko) 2009-03-25
WO2008007731A1 (fr) 2008-01-17
JP2008021782A (ja) 2008-01-31
EP2043145A1 (en) 2009-04-01
CN101490837A (zh) 2009-07-22

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