KR101014829B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR101014829B1
KR101014829B1 KR1020080060448A KR20080060448A KR101014829B1 KR 101014829 B1 KR101014829 B1 KR 101014829B1 KR 1020080060448 A KR1020080060448 A KR 1020080060448A KR 20080060448 A KR20080060448 A KR 20080060448A KR 101014829 B1 KR101014829 B1 KR 101014829B1
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KR
South Korea
Prior art keywords
insulating portion
insulating
opening
conductive
semiconductor device
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020080060448A
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English (en)
Korean (ko)
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KR20090004557A (ko
Inventor
고지 무나카타
Original Assignee
가부시키가이샤후지쿠라
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Publication of KR20090004557A publication Critical patent/KR20090004557A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/121—Arrangements for protection of devices protecting against mechanical damage
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/129—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed forming a chip-scale package [CSP]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H10W70/654—Top-view layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H10W70/654—Top-view layouts
    • H10W70/656—Fan-in layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H10W72/242—Dispositions, e.g. layouts relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H10W72/244—Dispositions, e.g. layouts relative to underlying supporting features, e.g. bond pads, RDLs or vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/922—Bond pads being integral with underlying chip-level interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
KR1020080060448A 2007-06-29 2008-06-25 반도체 장치 Expired - Fee Related KR101014829B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2007-00171914 2007-06-29
JP2007171914A JP2009010260A (ja) 2007-06-29 2007-06-29 半導体装置

Publications (2)

Publication Number Publication Date
KR20090004557A KR20090004557A (ko) 2009-01-12
KR101014829B1 true KR101014829B1 (ko) 2011-02-15

Family

ID=39841576

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080060448A Expired - Fee Related KR101014829B1 (ko) 2007-06-29 2008-06-25 반도체 장치

Country Status (6)

Country Link
US (2) US7791187B2 (enExample)
EP (1) EP2009691A1 (enExample)
JP (1) JP2009010260A (enExample)
KR (1) KR101014829B1 (enExample)
CN (1) CN101335249B (enExample)
TW (1) TWI371811B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2939566B1 (fr) * 2008-12-05 2011-03-11 St Microelectronics Sa Procede de realisation de plots exterieurs d'un dispositif semi-conducteur et dispositif semi-conducteur.
CN101866905B (zh) * 2009-04-16 2012-05-30 日月光半导体制造股份有限公司 基板结构及其制造方法
JP2010278040A (ja) * 2009-05-26 2010-12-09 Renesas Electronics Corp 半導体装置の製造方法および半導体装置
EP2330618A1 (en) * 2009-12-04 2011-06-08 STMicroelectronics (Grenoble 2) SAS Rebuilt wafer assembly
US8304867B2 (en) * 2010-11-01 2012-11-06 Texas Instruments Incorporated Crack arrest vias for IC devices
US11029372B2 (en) * 2016-11-18 2021-06-08 Asahi Kasei Microdevices Corporation Hall element for mitigating current concentration and fabrication method thereof
CN112635429B (zh) * 2019-10-08 2025-06-06 珠海格力电器股份有限公司 一种功率器件及其基板
EP4020036A1 (en) 2020-12-23 2022-06-29 EFFECT Photonics B.V. An environmentally protected photonic integrated circuit

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003124389A (ja) * 2001-10-10 2003-04-25 Fujikura Ltd 半導体パッケージ
KR100385766B1 (ko) * 1999-09-13 2003-05-28 샤프 가부시키가이샤 외부 접속 전극들에 대응하여 분리 제공된 수지 부재들을구비하는 반도체 디바이스
JP2004104103A (ja) * 2002-08-21 2004-04-02 Seiko Epson Corp 半導体装置及びその製造方法、回路基板並びに電子機器

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05175191A (ja) 1991-10-22 1993-07-13 Mitsubishi Electric Corp 積層導電配線
US5260517A (en) * 1992-09-09 1993-11-09 Micron Technology, Inc. Interconnect lead with stress joint
US5464794A (en) * 1994-05-11 1995-11-07 United Microelectronics Corporation Method of forming contact openings having concavo-concave shape
JPH10135270A (ja) * 1996-10-31 1998-05-22 Casio Comput Co Ltd 半導体装置及びその製造方法
JP3520764B2 (ja) 1998-04-22 2004-04-19 松下電器産業株式会社 半導体装置およびその製造方法
US6181569B1 (en) * 1999-06-07 2001-01-30 Kishore K. Chakravorty Low cost chip size package and method of fabricating the same
JP2000353716A (ja) 1999-06-14 2000-12-19 Matsushita Electronics Industry Corp 半導体装置およびその製造方法ならびに半導体装置が実装されたモジュール
JP3386029B2 (ja) * 2000-02-09 2003-03-10 日本電気株式会社 フリップチップ型半導体装置及びその製造方法
US7285867B2 (en) * 2002-11-08 2007-10-23 Casio Computer Co., Ltd. Wiring structure on semiconductor substrate and method of fabricating the same
JP3905032B2 (ja) * 2002-12-20 2007-04-18 シャープ株式会社 半導体装置、および、その製造方法
JP2004207368A (ja) 2002-12-24 2004-07-22 Fujikura Ltd 半導体装置とその製造方法及び電子装置
JP2004288816A (ja) * 2003-03-20 2004-10-14 Seiko Epson Corp 半導体ウエハ、半導体装置及びその製造方法、回路基板並びに電子機器
US7358608B2 (en) * 2003-06-13 2008-04-15 Oki Electric Industry Co., Ltd. Semiconductor device having chip size package with improved strength
US7390688B2 (en) * 2005-02-21 2008-06-24 Casio Computer Co.,Ltd. Semiconductor device and manufacturing method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100385766B1 (ko) * 1999-09-13 2003-05-28 샤프 가부시키가이샤 외부 접속 전극들에 대응하여 분리 제공된 수지 부재들을구비하는 반도체 디바이스
JP2003124389A (ja) * 2001-10-10 2003-04-25 Fujikura Ltd 半導体パッケージ
JP2004104103A (ja) * 2002-08-21 2004-04-02 Seiko Epson Corp 半導体装置及びその製造方法、回路基板並びに電子機器

Also Published As

Publication number Publication date
TW200908177A (en) 2009-02-16
KR20090004557A (ko) 2009-01-12
TWI371811B (en) 2012-09-01
US20080296762A1 (en) 2008-12-04
EP2009691A1 (en) 2008-12-31
US7791187B2 (en) 2010-09-07
US20100295175A1 (en) 2010-11-25
JP2009010260A (ja) 2009-01-15
CN101335249B (zh) 2011-04-06
US7863719B2 (en) 2011-01-04
CN101335249A (zh) 2008-12-31

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