KR100996324B1 - 피막, 실리카계 피막 및 그 형성방법, 실리카계 피막 형성용 조성물, 및 전자부품 - Google Patents

피막, 실리카계 피막 및 그 형성방법, 실리카계 피막 형성용 조성물, 및 전자부품 Download PDF

Info

Publication number
KR100996324B1
KR100996324B1 KR1020097012168A KR20097012168A KR100996324B1 KR 100996324 B1 KR100996324 B1 KR 100996324B1 KR 1020097012168 A KR1020097012168 A KR 1020097012168A KR 20097012168 A KR20097012168 A KR 20097012168A KR 100996324 B1 KR100996324 B1 KR 100996324B1
Authority
KR
South Korea
Prior art keywords
film
silica
forming
composition
atom
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020097012168A
Other languages
English (en)
Korean (ko)
Other versions
KR20090074280A (ko
Inventor
하루아키 사쿠라이
타카히로 요시카와
Original Assignee
히다치 가세고교 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 히다치 가세고교 가부시끼가이샤 filed Critical 히다치 가세고교 가부시끼가이샤
Publication of KR20090074280A publication Critical patent/KR20090074280A/ko
Application granted granted Critical
Publication of KR100996324B1 publication Critical patent/KR100996324B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D201/00—Coating compositions based on unspecified macromolecular compounds
    • C09D201/02—Coating compositions based on unspecified macromolecular compounds characterised by the presence of specified groups, e.g. terminal or pendant functional groups
    • C09D201/10—Coating compositions based on unspecified macromolecular compounds characterised by the presence of specified groups, e.g. terminal or pendant functional groups containing hydrolysable silane groups
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D1/00—Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/02—Polysilicates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/16—Nitrogen-containing compounds
    • C08K5/17—Amines; Quaternary ammonium compounds
    • C08K5/19—Quaternary ammonium compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H01L21/02348—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to UV light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76837—Filling up the space between adjacent conductive structures; Gap-filling properties of dielectrics

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Wood Science & Technology (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Paints Or Removers (AREA)
  • Silicon Compounds (AREA)
  • Formation Of Insulating Films (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
KR1020097012168A 2004-12-21 2005-12-21 피막, 실리카계 피막 및 그 형성방법, 실리카계 피막 형성용 조성물, 및 전자부품 Expired - Fee Related KR100996324B1 (ko)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JPJP-P-2004-369221 2004-12-21
JP2004369221 2004-12-21
JPJP-P-2005-002382 2005-01-07
JP2005002382 2005-01-07
JP2005114558 2005-04-12
JPJP-P-2005-114558 2005-04-12
JP2005231202 2005-08-09
JPJP-P-2005-231202 2005-08-09

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020077013336A Division KR100912566B1 (ko) 2004-12-21 2007-06-14 피막, 실리카계 피막 및 그 형성방법, 실리카계 피막형성용 조성물, 및 전자부품

Publications (2)

Publication Number Publication Date
KR20090074280A KR20090074280A (ko) 2009-07-06
KR100996324B1 true KR100996324B1 (ko) 2010-11-23

Family

ID=36601779

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020097012168A Expired - Fee Related KR100996324B1 (ko) 2004-12-21 2005-12-21 피막, 실리카계 피막 및 그 형성방법, 실리카계 피막 형성용 조성물, 및 전자부품
KR1020077013336A Expired - Fee Related KR100912566B1 (ko) 2004-12-21 2007-06-14 피막, 실리카계 피막 및 그 형성방법, 실리카계 피막형성용 조성물, 및 전자부품

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020077013336A Expired - Fee Related KR100912566B1 (ko) 2004-12-21 2007-06-14 피막, 실리카계 피막 및 그 형성방법, 실리카계 피막형성용 조성물, 및 전자부품

Country Status (6)

Country Link
US (1) US20080260956A1 (enExample)
EP (1) EP1829945A4 (enExample)
JP (1) JPWO2006068181A1 (enExample)
KR (2) KR100996324B1 (enExample)
TW (1) TW200641075A (enExample)
WO (1) WO2006068181A1 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8901268B2 (en) 2004-08-03 2014-12-02 Ahila Krishnamoorthy Compositions, layers and films for optoelectronic devices, methods of production and uses thereof
JP2006213908A (ja) * 2004-12-21 2006-08-17 Hitachi Chem Co Ltd シリカ系被膜形成用組成物、シリカ系被膜の形成方法、シリカ系被膜、及び、電子部品
EP2123445A4 (en) * 2007-02-05 2012-04-11 Konica Minolta Holdings Inc TRANSPARENT FILM THAT IS WATERPROOFABLE AND METHOD FOR PRODUCING THE SAME
JPWO2008096615A1 (ja) * 2007-02-05 2010-05-20 コニカミノルタホールディングス株式会社 透明ガスバリア性フィルム及びその製造方法
WO2008096617A1 (ja) * 2007-02-06 2008-08-14 Konica Minolta Holdings, Inc. 透明ガスバリア性フィルム及び透明ガスバリア性フィルムの製造方法
US8642246B2 (en) 2007-02-26 2014-02-04 Honeywell International Inc. Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof
TWI439494B (zh) 2007-02-27 2014-06-01 Braggone Oy 產生有機矽氧烷聚合物的方法
KR101260945B1 (ko) * 2007-07-09 2013-05-06 삼성전자주식회사 실록산 폴리머 조성물 및 이를 이용한 커패시터 제조 방법
DE102007054627A1 (de) 2007-11-15 2009-05-20 Cht R. Beitlich Gmbh Wasserverträgliche Sole zur Beschichtung verschiedener Substrate
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
JP2011052170A (ja) * 2009-09-04 2011-03-17 Toagosei Co Ltd 硬化性塗布組成物および硬化被膜
CN102666707B (zh) 2009-11-19 2015-04-01 住友橡胶工业株式会社 轮胎用橡胶组合物及充气轮胎
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
US9196849B2 (en) * 2013-01-09 2015-11-24 Research & Business Foundation Sungkyunkwan University Polymer/inorganic multi-layer encapsulation film
JP2016155882A (ja) * 2013-07-11 2016-09-01 日産化学工業株式会社 高屈折率膜形成組成物
KR101506801B1 (ko) * 2013-08-19 2015-03-30 성균관대학교산학협력단 고강도 저유전 플라즈마 중합체 박막 및 그 제조 방법
US9371430B2 (en) 2013-08-19 2016-06-21 Research & Business Foundation Sungkyunkwan University Porous film with high hardness and a low dielectric constant and preparation method thereof
WO2015118995A1 (ja) * 2014-02-07 2015-08-13 株式会社ダイセル シリコーン溶解用溶剤
JP2014224266A (ja) * 2014-08-04 2014-12-04 東亞合成株式会社 硬化性塗布組成物および硬化被膜
US10544329B2 (en) 2015-04-13 2020-01-28 Honeywell International Inc. Polysiloxane formulations and coatings for optoelectronic applications
EP4041803A4 (en) * 2019-10-04 2022-11-30 FUJIFILM Electronic Materials U.S.A., Inc. FLATTENING METHOD AND COMPOSITION
JP6950799B1 (ja) * 2020-08-28 2021-10-13 ウシオ電機株式会社 エキシマランプ
KR102261036B1 (ko) * 2020-10-20 2021-06-04 엄종호 대형유리에 적용된 샤시 연결용 패드 조성물
US12087616B2 (en) * 2022-01-27 2024-09-10 Taiwan Semiconductor Manufacturing Company, Ltd. Air gap formation method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002088304A (ja) 2000-09-13 2002-03-27 Ube Nitto Kasei Co Ltd シリカ系コーティング剤、シリカ薄膜の製造方法およびシリカ薄膜
JP2004277501A (ja) 2003-03-13 2004-10-07 Hitachi Chem Co Ltd シリカ系被膜形成用組成物、シリカ系被膜及びその形成方法、並びにシリカ系被膜を備える電子部品

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5152834A (en) * 1990-09-14 1992-10-06 Ncr Corporation Spin-on glass composition
KR100618304B1 (ko) * 1998-09-25 2006-08-31 쇼꾸바이 카세이 고교 가부시키가이샤 낮은 유전상수를 지니는 실리카-포함 필름을 형성하기위한 코팅 액체 및 그의 필름으로 코팅된 기질
JP2000272915A (ja) * 1999-03-24 2000-10-03 Hitachi Chem Co Ltd シリカ系被膜形成用塗布液、シリカ系被膜の製造法、シリカ系被膜及び半導体装置
JP2000336312A (ja) * 1999-05-28 2000-12-05 Hitachi Chem Co Ltd シリカ系被膜形成用塗布液、シリカ系被膜の製造法及び半導体装置
JP2001055554A (ja) * 1999-08-20 2001-02-27 Jsr Corp 膜形成用組成物および絶縁膜形成用材料
JP2001098218A (ja) * 1999-09-28 2001-04-10 Hitachi Chem Co Ltd シリカ系被膜、シリカ系被膜の形成方法及びシリカ系被膜を有する電子部品
JP2001262062A (ja) * 2000-03-14 2001-09-26 Hitachi Chem Co Ltd シリカ系被膜形成用塗布液、シリカ系被膜の製造法、シリカ系被膜、これを用いた半導体素子及び多層配線板
JP4697363B2 (ja) * 2000-08-21 2011-06-08 Ｊｓｒ株式会社 膜形成用組成物および絶縁膜形成用材料
JP2002129103A (ja) * 2000-10-23 2002-05-09 Jsr Corp 膜形成用組成物および絶縁膜形成用材料
JP2002201415A (ja) * 2000-12-28 2002-07-19 Hitachi Chem Co Ltd シリカ系被膜形成用塗布液、シリカ系被膜の製造方法及び半導体装置
JP2002201416A (ja) * 2000-12-28 2002-07-19 Hitachi Chem Co Ltd 半導体用シリカ系被膜形成用塗布液、半導体用シリカ系被膜及び半導体装置
JP2003041191A (ja) * 2001-07-30 2003-02-13 Jsr Corp 膜形成用組成物、膜の形成方法およびシリカ系膜
JP2003064307A (ja) * 2001-08-28 2003-03-05 Hitachi Chem Co Ltd シリカ系被膜、シリカ系被膜形成用組成物、シリカ系被膜の製造方法及び電子部品
JP4972834B2 (ja) * 2001-08-28 2012-07-11 日立化成工業株式会社 シロキサン樹脂
JP3702842B2 (ja) * 2001-12-04 2005-10-05 日立化成工業株式会社 シリカ系被膜形成用組成物、シリカ系被膜、シリカ系被膜の製造方法及び電子部品
KR100820992B1 (ko) * 2002-02-27 2008-04-10 히다치 가세고교 가부시끼가이샤 실리카계 피막형성용 조성물, 실리카계 피막 및 그제조방법 및 전자부품
JP4110797B2 (ja) * 2002-02-27 2008-07-02 日立化成工業株式会社 シリカ系被膜形成用組成物、シリカ系被膜の製造方法及び電子部品
US7682701B2 (en) * 2002-02-27 2010-03-23 Hitachi Chemical Co., Ltd. Composition for forming silica based coating film, silica based coating film and method for preparation thereof, and electronic parts
US7687590B2 (en) * 2002-02-27 2010-03-30 Hitachi Chemical Company, Ltd. Composition for forming silica based coating film, silica based coating film and method for preparation thereof, and electronic parts
JP3966026B2 (ja) * 2002-03-06 2007-08-29 日立化成工業株式会社 シリカ系被膜形成用組成物、シリカ系被膜及びその製造方法、並びに電子部品
JP2004277508A (ja) * 2003-03-13 2004-10-07 Hitachi Chem Co Ltd シリカ系被膜形成用組成物、シリカ系被膜及びその形成方法並びにシリカ系被膜を備える電子部品
JP2004277502A (ja) * 2003-03-13 2004-10-07 Hitachi Chem Co Ltd シリカ系被膜形成用組成物、シリカ系被膜及びその形成方法並びにシリカ系被膜を備える電子部品
JP2004311532A (ja) * 2003-04-02 2004-11-04 Semiconductor Leading Edge Technologies Inc 多孔質膜の形成方法
JP2004307694A (ja) * 2003-04-09 2004-11-04 Shin Etsu Chem Co Ltd 多孔質膜形成用組成物、多孔質膜の製造方法、多孔質膜、層間絶縁膜及び半導体装置。
JP2006213908A (ja) * 2004-12-21 2006-08-17 Hitachi Chem Co Ltd シリカ系被膜形成用組成物、シリカ系被膜の形成方法、シリカ系被膜、及び、電子部品
US20070099005A1 (en) * 2005-10-31 2007-05-03 Honeywell International Inc. Thick crack-free silica film by colloidal silica incorporation

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002088304A (ja) 2000-09-13 2002-03-27 Ube Nitto Kasei Co Ltd シリカ系コーティング剤、シリカ薄膜の製造方法およびシリカ薄膜
JP2004277501A (ja) 2003-03-13 2004-10-07 Hitachi Chem Co Ltd シリカ系被膜形成用組成物、シリカ系被膜及びその形成方法、並びにシリカ系被膜を備える電子部品

Also Published As

Publication number Publication date
JPWO2006068181A1 (ja) 2008-06-12
TWI337616B (enExample) 2011-02-21
TW200641075A (en) 2006-12-01
KR100912566B1 (ko) 2009-08-19
EP1829945A4 (en) 2011-03-23
WO2006068181A1 (ja) 2006-06-29
US20080260956A1 (en) 2008-10-23
EP1829945A1 (en) 2007-09-05
KR20070086138A (ko) 2007-08-27
KR20090074280A (ko) 2009-07-06

Similar Documents

Publication Publication Date Title
KR100912566B1 (ko) 피막, 실리카계 피막 및 그 형성방법, 실리카계 피막형성용 조성물, 및 전자부품
KR100869882B1 (ko) 방사선 경화성 조성물, 경화막 형성방법 및 패턴 형성방법
KR100698391B1 (ko) 방사선 경화성 조성물, 그 보존방법, 경화막 형성방법,패턴 형성방법, 패턴 사용방법, 전자부품 및 광도파로
JP2003257963A (ja) シリカ系被膜形成用組成物、シリカ系被膜及びその製造方法、並びに電子部品
JP2009186677A (ja) 感光性樹脂組成物、シリカ系被膜の形成方法、及びシリカ系被膜を備える装置及び部材
JP2006045352A (ja) シリカ系被膜形成用組成物、シリカ系被膜及びその形成方法並びにシリカ系被膜を備える電子部品
JP2006213908A (ja) シリカ系被膜形成用組成物、シリカ系被膜の形成方法、シリカ系被膜、及び、電子部品
JP2005146282A (ja) シリカ系被膜形成用組成物、シリカ系被膜及びその形成方法、並びにシリカ系被膜を備える電子部品
JP2006183029A (ja) シリカ系被膜形成用組成物、シリカ系被膜の形成方法、シリカ系被膜、及び、電子部品
JP2007031696A (ja) 樹脂組成物、シリカ系被膜及びその製造方法、積層体、並びに、電子部品
JP2006183028A (ja) シリカ系被膜形成用組成物、シリカ系被膜の形成方法、シリカ系被膜、及び、電子部品
JP2005042118A (ja) シリカ系被膜形成用組成物、シリカ系被膜の製造方法及び電子部品
JP4655633B2 (ja) 放射線硬化性組成物、その保存方法、硬化膜形成方法、パターン形成方法、パターン使用方法、電子部品及び光導波路
JP3818307B2 (ja) 放射線硬化性組成物、その保存方法、硬化膜形成方法、パターン形成方法、パターン使用方法、電子部品及び光導波路
JP2005105283A (ja) シリカ系被膜形成用組成物、シリカ系被膜及びその形成方法、並びにシリカ系被膜を備える電子部品
JP2009237531A (ja) 感光性樹脂組成物の製造方法、シリカ系被膜の形成方法、並びにシリカ系被膜を備える装置及び部材
JP2005105282A (ja) シリカ系被膜形成用組成物、シリカ系被膜及びその形成方法、並びにシリカ系被膜を備える電子部品
JP2005105281A (ja) シリカ系被膜形成用組成物、シリカ系被膜及びその形成方法、並びにシリカ系被膜を備える電子部品
JP3801192B2 (ja) 放射線硬化性組成物、その保存方法、硬化膜形成方法、パターン形成方法、パターン使用方法、電子部品及び光導波路
JP2006183027A (ja) シリカ系被膜形成用組成物、シリカ系被膜の形成方法、シリカ系被膜、及び、電子部品
JP2007031697A (ja) 被アルカリ処理被膜形成用組成物、被アルカリ処理被膜及びその製造方法、積層体、反射防止膜、並びに電子部品
JP2012222104A (ja) シリカ系被膜の形成方法及び電子部品
JP2006091806A (ja) 放射線硬化性組成物、その保存方法、硬化膜形成方法、パターン形成方法、パターン使用方法、電子部品及び光導波路
JP2007031596A (ja) シリカ系被膜形成用組成物、シリカ系被膜、及び、シリカ系被膜の形成方法、並びに、シリカ系被膜を備える半導体装置
JP2012242483A (ja) シリカ系感光性樹脂組成物、パターンを有するシリカ系絶縁被膜の形成方法及びそれを備える電子部品

Legal Events

Date Code Title Description
A107 Divisional application of patent
PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A16-div-PA0104

St.27 status event code: A-0-1-A10-A18-div-PA0104

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

Fee payment year number: 1

St.27 status event code: A-2-2-U10-U12-oth-PR1002

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

St.27 status event code: A-5-5-R10-R13-asn-PN2301

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

Not in force date: 20131118

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

St.27 status event code: A-4-4-U10-U13-oth-PC1903

PC1903 Unpaid annual fee

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20131118

St.27 status event code: N-4-6-H10-H13-oth-PC1903

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

St.27 status event code: A-5-5-R10-R13-asn-PN2301

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

St.27 status event code: A-5-5-R10-R13-asn-PN2301

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000