KR100991070B1 - 면 발광 레이저 소자 - Google Patents

면 발광 레이저 소자 Download PDF

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Publication number
KR100991070B1
KR100991070B1 KR1020080044868A KR20080044868A KR100991070B1 KR 100991070 B1 KR100991070 B1 KR 100991070B1 KR 1020080044868 A KR1020080044868 A KR 1020080044868A KR 20080044868 A KR20080044868 A KR 20080044868A KR 100991070 B1 KR100991070 B1 KR 100991070B1
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KR
South Korea
Prior art keywords
photonic crystal
region
light
layer
crystal region
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Expired - Fee Related
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KR1020080044868A
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English (en)
Korean (ko)
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KR20080101720A (ko
Inventor
유이치로 호리
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캐논 가부시끼가이샤
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Publication of KR20080101720A publication Critical patent/KR20080101720A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/11—Comprising a photonic bandgap structure

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
KR1020080044868A 2007-05-15 2008-05-15 면 발광 레이저 소자 Expired - Fee Related KR100991070B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007128774 2007-05-15
JPJP-P-2007-00128774 2007-05-15

Publications (2)

Publication Number Publication Date
KR20080101720A KR20080101720A (ko) 2008-11-21
KR100991070B1 true KR100991070B1 (ko) 2010-10-29

Family

ID=40027427

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080044868A Expired - Fee Related KR100991070B1 (ko) 2007-05-15 2008-05-15 면 발광 레이저 소자

Country Status (4)

Country Link
US (2) US7684460B2 (enExample)
JP (1) JP5118544B2 (enExample)
KR (1) KR100991070B1 (enExample)
CN (1) CN101308996B (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5084540B2 (ja) * 2008-02-06 2012-11-28 キヤノン株式会社 垂直共振器型面発光レーザ
JP5388666B2 (ja) * 2008-04-21 2014-01-15 キヤノン株式会社 面発光レーザ
JP2010177354A (ja) * 2009-01-28 2010-08-12 Sumitomo Electric Ind Ltd 半導体発光素子および半導体発光素子の製造方法
JP5183555B2 (ja) * 2009-04-02 2013-04-17 キヤノン株式会社 面発光レーザアレイ
JP4975130B2 (ja) * 2009-05-07 2012-07-11 キヤノン株式会社 フォトニック結晶面発光レーザ
JP5335819B2 (ja) * 2010-09-14 2013-11-06 キヤノン株式会社 フォトニック結晶面発光レーザ、該レーザを用いたレーザアレイ、該レーザアレイを用いた画像形成装置
JP5704901B2 (ja) * 2010-11-17 2015-04-22 キヤノン株式会社 ２次元フォトニック結晶面発光レーザ
JP5836609B2 (ja) * 2011-03-04 2015-12-24 キヤノン株式会社 面発光レーザ、アレイ及び画像形成装置
JP5769483B2 (ja) * 2011-04-21 2015-08-26 キヤノン株式会社 面発光レーザ及び画像形成装置
JP5892534B2 (ja) * 2011-09-30 2016-03-23 国立大学法人京都大学 半導体レーザ素子
DE102011122232A1 (de) 2011-12-23 2013-06-27 Menlo Systems Gmbh System zum Erzeugen eines Schwebungssignals
JP2015523726A (ja) * 2012-06-18 2015-08-13 マサチューセッツ インスティテュート オブ テクノロジー 偶発的ディラック点によって有効化されるフォトニック結晶面発光レーザー
JP6305056B2 (ja) * 2013-01-08 2018-04-04 ローム株式会社 ２次元フォトニック結晶面発光レーザ
JP7101370B2 (ja) * 2017-02-27 2022-07-15 国立大学法人京都大学 面発光レーザ及び面発光レーザの製造方法
JP7333666B2 (ja) * 2017-02-28 2023-08-25 学校法人上智学院 光デバイスおよび光デバイスの製造方法
JP6580097B2 (ja) * 2017-09-05 2019-09-25 株式会社東芝 面発光量子カスケードレーザ
JP6954562B2 (ja) * 2017-09-15 2021-10-27 セイコーエプソン株式会社 発光装置およびその製造方法、ならびにプロジェクター
CN110535033B (zh) * 2018-05-24 2021-05-25 智林企业股份有限公司 电激发光子晶体面射型雷射元件
JP7306675B2 (ja) * 2019-02-22 2023-07-11 国立大学法人京都大学 ２次元フォトニック結晶面発光レーザ
JP7076414B2 (ja) * 2019-08-23 2022-05-27 株式会社東芝 面発光量子カスケードレーザ
US20210168338A1 (en) * 2019-11-29 2021-06-03 Seiko Epson Corporation Light emitting apparatus and projector
EP4143933A4 (en) * 2020-04-27 2024-05-29 Technion Research & Development Foundation Ltd. Topologic insulator surface emitting laser system
JP7582915B2 (ja) * 2021-07-21 2024-11-13 株式会社東芝 面発光型半導体発光装置
TWI855273B (zh) * 2021-10-28 2024-09-11 鴻海精密工業股份有限公司 光子晶體面射型雷射裝置及光學系統
CN115548873B (zh) * 2022-12-02 2023-06-02 微源光子(深圳)科技有限公司 光子晶体激光器及其制备方法
CN117526086A (zh) * 2024-01-04 2024-02-06 香港中文大学（深圳） 一种高斜率效率光子晶体面发射激光器及制备方法
GB2639826A (en) * 2024-03-22 2025-10-08 Vector Photonics Ltd Surface emitting laser
GB2639827A (en) * 2024-03-22 2025-10-08 Vector Photonics Ltd Surface emitting laser

Citations (3)

* Cited by examiner, † Cited by third party
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JP2005353623A (ja) 2004-06-08 2005-12-22 Ricoh Co Ltd 面発光レーザ及び光伝送システム
JP2006165309A (ja) 2004-12-08 2006-06-22 Sumitomo Electric Ind Ltd 半導体レーザ素子
JP2007073945A (ja) 2005-08-11 2007-03-22 Canon Inc 面発光レーザ、該面発光レーザにおける二次元フォトニック結晶の製造方法

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JP3983933B2 (ja) 1999-05-21 2007-09-26 進 野田 半導体レーザ、および半導体レーザの製造方法
US6363096B1 (en) * 1999-08-30 2002-03-26 Lucent Technologies Inc. Article comprising a plastic laser
JP4492986B2 (ja) * 2000-04-24 2010-06-30 パナソニック株式会社 半導体面発光素子
JP3561244B2 (ja) 2001-07-05 2004-09-02 独立行政法人 科学技術振興機構 二次元フォトニック結晶面発光レーザ
AU2003207090A1 (en) * 2002-02-08 2003-09-02 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device and its manufacturing method
JP2003273456A (ja) * 2002-03-14 2003-09-26 Japan Science & Technology Corp ２次元フォトニック結晶面発光レーザ
JP4027393B2 (ja) * 2005-04-28 2007-12-26 キヤノン株式会社 面発光レーザ
JP4027392B2 (ja) * 2005-04-28 2007-12-26 キヤノン株式会社 垂直共振器型面発光レーザ装置
JP4927411B2 (ja) * 2006-02-03 2012-05-09 古河電気工業株式会社 ２次元フォトニック結晶面発光レーザ
JP2007234824A (ja) 2006-02-28 2007-09-13 Canon Inc 垂直共振器型面発光レーザ
JP5037835B2 (ja) 2006-02-28 2012-10-03 キヤノン株式会社 垂直共振器型面発光レーザ
US7697588B2 (en) 2006-11-02 2010-04-13 Canon Kabushiki Kaisha Structure having photonic crystal and surface-emitting laser using the same
US7535946B2 (en) 2006-11-16 2009-05-19 Canon Kabushiki Kaisha Structure using photonic crystal and surface emitting laser

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005353623A (ja) 2004-06-08 2005-12-22 Ricoh Co Ltd 面発光レーザ及び光伝送システム
JP2006165309A (ja) 2004-12-08 2006-06-22 Sumitomo Electric Ind Ltd 半導体レーザ素子
JP2007073945A (ja) 2005-08-11 2007-03-22 Canon Inc 面発光レーザ、該面発光レーザにおける二次元フォトニック結晶の製造方法

Also Published As

Publication number Publication date
US20100046571A1 (en) 2010-02-25
KR20080101720A (ko) 2008-11-21
US20080285608A1 (en) 2008-11-20
US7684460B2 (en) 2010-03-23
CN101308996A (zh) 2008-11-19
CN101308996B (zh) 2012-01-04
JP2008311625A (ja) 2008-12-25
JP5118544B2 (ja) 2013-01-16

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