CN101308996B - 表面发射激光装置 - Google Patents

表面发射激光装置 Download PDF

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Publication number
CN101308996B
CN101308996B CN2008100992478A CN200810099247A CN101308996B CN 101308996 B CN101308996 B CN 101308996B CN 2008100992478 A CN2008100992478 A CN 2008100992478A CN 200810099247 A CN200810099247 A CN 200810099247A CN 101308996 B CN101308996 B CN 101308996B
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CN
China
Prior art keywords
photonic crystal
crystal region
photonic
surface emitting
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2008100992478A
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English (en)
Chinese (zh)
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CN101308996A (zh
Inventor
堀雄一郎
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Canon Inc
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Canon Inc
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Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of CN101308996A publication Critical patent/CN101308996A/zh
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Publication of CN101308996B publication Critical patent/CN101308996B/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/11—Comprising a photonic bandgap structure

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
CN2008100992478A 2007-05-15 2008-05-15 表面发射激光装置 Expired - Fee Related CN101308996B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-128774 2007-05-15
JP2007128774 2007-05-15

Publications (2)

Publication Number Publication Date
CN101308996A CN101308996A (zh) 2008-11-19
CN101308996B true CN101308996B (zh) 2012-01-04

Family

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Family Applications (1)

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CN2008100992478A Expired - Fee Related CN101308996B (zh) 2007-05-15 2008-05-15 表面发射激光装置

Country Status (4)

Country Link
US (2) US7684460B2 (enExample)
JP (1) JP5118544B2 (enExample)
KR (1) KR100991070B1 (enExample)
CN (1) CN101308996B (enExample)

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JP5084540B2 (ja) * 2008-02-06 2012-11-28 キヤノン株式会社 垂直共振器型面発光レーザ
JP5388666B2 (ja) * 2008-04-21 2014-01-15 キヤノン株式会社 面発光レーザ
JP2010177354A (ja) * 2009-01-28 2010-08-12 Sumitomo Electric Ind Ltd 半導体発光素子および半導体発光素子の製造方法
JP5183555B2 (ja) * 2009-04-02 2013-04-17 キヤノン株式会社 面発光レーザアレイ
JP4975130B2 (ja) * 2009-05-07 2012-07-11 キヤノン株式会社 フォトニック結晶面発光レーザ
JP5335819B2 (ja) * 2010-09-14 2013-11-06 キヤノン株式会社 フォトニック結晶面発光レーザ、該レーザを用いたレーザアレイ、該レーザアレイを用いた画像形成装置
JP5704901B2 (ja) * 2010-11-17 2015-04-22 キヤノン株式会社 ２次元フォトニック結晶面発光レーザ
JP5836609B2 (ja) * 2011-03-04 2015-12-24 キヤノン株式会社 面発光レーザ、アレイ及び画像形成装置
JP5769483B2 (ja) * 2011-04-21 2015-08-26 キヤノン株式会社 面発光レーザ及び画像形成装置
JP5892534B2 (ja) * 2011-09-30 2016-03-23 国立大学法人京都大学 半導体レーザ素子
DE102011122232A1 (de) 2011-12-23 2013-06-27 Menlo Systems Gmbh System zum Erzeugen eines Schwebungssignals
JP2015523726A (ja) * 2012-06-18 2015-08-13 マサチューセッツ インスティテュート オブ テクノロジー 偶発的ディラック点によって有効化されるフォトニック結晶面発光レーザー
JP6305056B2 (ja) * 2013-01-08 2018-04-04 ローム株式会社 ２次元フォトニック結晶面発光レーザ
JP7101370B2 (ja) * 2017-02-27 2022-07-15 国立大学法人京都大学 面発光レーザ及び面発光レーザの製造方法
JP7333666B2 (ja) * 2017-02-28 2023-08-25 学校法人上智学院 光デバイスおよび光デバイスの製造方法
JP6580097B2 (ja) * 2017-09-05 2019-09-25 株式会社東芝 面発光量子カスケードレーザ
JP6954562B2 (ja) * 2017-09-15 2021-10-27 セイコーエプソン株式会社 発光装置およびその製造方法、ならびにプロジェクター
CN110535033B (zh) * 2018-05-24 2021-05-25 智林企业股份有限公司 电激发光子晶体面射型雷射元件
JP7306675B2 (ja) * 2019-02-22 2023-07-11 国立大学法人京都大学 ２次元フォトニック結晶面発光レーザ
JP7076414B2 (ja) * 2019-08-23 2022-05-27 株式会社東芝 面発光量子カスケードレーザ
US20210168338A1 (en) * 2019-11-29 2021-06-03 Seiko Epson Corporation Light emitting apparatus and projector
EP4143933A4 (en) * 2020-04-27 2024-05-29 Technion Research & Development Foundation Ltd. Topologic insulator surface emitting laser system
JP7582915B2 (ja) * 2021-07-21 2024-11-13 株式会社東芝 面発光型半導体発光装置
TWI855273B (zh) * 2021-10-28 2024-09-11 鴻海精密工業股份有限公司 光子晶體面射型雷射裝置及光學系統
CN115548873B (zh) * 2022-12-02 2023-06-02 微源光子(深圳)科技有限公司 光子晶体激光器及其制备方法
CN117526086A (zh) * 2024-01-04 2024-02-06 香港中文大学（深圳） 一种高斜率效率光子晶体面发射激光器及制备方法
GB2639826A (en) * 2024-03-22 2025-10-08 Vector Photonics Ltd Surface emitting laser
GB2639827A (en) * 2024-03-22 2025-10-08 Vector Photonics Ltd Surface emitting laser

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JP3983933B2 (ja) 1999-05-21 2007-09-26 進 野田 半導体レーザ、および半導体レーザの製造方法
US6363096B1 (en) * 1999-08-30 2002-03-26 Lucent Technologies Inc. Article comprising a plastic laser
JP4492986B2 (ja) * 2000-04-24 2010-06-30 パナソニック株式会社 半導体面発光素子
JP3561244B2 (ja) 2001-07-05 2004-09-02 独立行政法人 科学技術振興機構 二次元フォトニック結晶面発光レーザ
AU2003207090A1 (en) * 2002-02-08 2003-09-02 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device and its manufacturing method
JP2003273456A (ja) * 2002-03-14 2003-09-26 Japan Science & Technology Corp ２次元フォトニック結晶面発光レーザ
JP4602701B2 (ja) 2004-06-08 2010-12-22 株式会社リコー 面発光レーザ及び光伝送システム
JP2006165309A (ja) 2004-12-08 2006-06-22 Sumitomo Electric Ind Ltd 半導体レーザ素子
JP4027393B2 (ja) * 2005-04-28 2007-12-26 キヤノン株式会社 面発光レーザ
JP4027392B2 (ja) * 2005-04-28 2007-12-26 キヤノン株式会社 垂直共振器型面発光レーザ装置
JP4933193B2 (ja) 2005-08-11 2012-05-16 キヤノン株式会社 面発光レーザ、該面発光レーザにおける二次元フォトニック結晶の製造方法
JP4927411B2 (ja) * 2006-02-03 2012-05-09 古河電気工業株式会社 ２次元フォトニック結晶面発光レーザ
JP2007234824A (ja) 2006-02-28 2007-09-13 Canon Inc 垂直共振器型面発光レーザ
JP5037835B2 (ja) 2006-02-28 2012-10-03 キヤノン株式会社 垂直共振器型面発光レーザ
US7697588B2 (en) 2006-11-02 2010-04-13 Canon Kabushiki Kaisha Structure having photonic crystal and surface-emitting laser using the same
US7535946B2 (en) 2006-11-16 2009-05-19 Canon Kabushiki Kaisha Structure using photonic crystal and surface emitting laser

Also Published As

Publication number Publication date
US20100046571A1 (en) 2010-02-25
KR20080101720A (ko) 2008-11-21
US20080285608A1 (en) 2008-11-20
US7684460B2 (en) 2010-03-23
CN101308996A (zh) 2008-11-19
KR100991070B1 (ko) 2010-10-29
JP2008311625A (ja) 2008-12-25
JP5118544B2 (ja) 2013-01-16

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