KR100988112B1 - 균일성 제어를 위해 염소로 다단계 포토마스크를 에칭하는방법 - Google Patents

균일성 제어를 위해 염소로 다단계 포토마스크를 에칭하는방법 Download PDF

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KR100988112B1
KR100988112B1 KR1020070130986A KR20070130986A KR100988112B1 KR 100988112 B1 KR100988112 B1 KR 100988112B1 KR 1020070130986 A KR1020070130986 A KR 1020070130986A KR 20070130986 A KR20070130986 A KR 20070130986A KR 100988112 B1 KR100988112 B1 KR 100988112B1
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South Korea
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layer
quartz
etching
processing chamber
process gas
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KR20080056652A (ko
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레니 코치
스코트 에이. 앤더슨
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어플라이드 머티어리얼스, 인코포레이티드
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
KR1020070130986A 2006-12-18 2007-12-14 균일성 제어를 위해 염소로 다단계 포토마스크를 에칭하는방법 Expired - Fee Related KR100988112B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/612,036 2006-12-18
US11/612,036 US7786019B2 (en) 2006-12-18 2006-12-18 Multi-step photomask etching with chlorine for uniformity control

Publications (2)

Publication Number Publication Date
KR20080056652A KR20080056652A (ko) 2008-06-23
KR100988112B1 true KR100988112B1 (ko) 2010-10-18

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KR1020070130986A Expired - Fee Related KR100988112B1 (ko) 2006-12-18 2007-12-14 균일성 제어를 위해 염소로 다단계 포토마스크를 에칭하는방법

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US (1) US7786019B2 (enExample)
EP (1) EP1947508A1 (enExample)
JP (1) JP2010514224A (enExample)
KR (1) KR100988112B1 (enExample)
WO (1) WO2008077012A2 (enExample)

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US8956809B2 (en) * 2012-08-03 2015-02-17 Applied Materials, Inc. Apparatus and methods for etching quartz substrate in photomask manufacturing applications
US9653316B2 (en) * 2013-02-18 2017-05-16 Tokyo Electron Limited Plasma processing method and plasma processing apparatus
JP6267989B2 (ja) * 2013-02-18 2018-01-24 東京エレクトロン株式会社 プラズマ処理方法及び容量結合型プラズマ処理装置
US20150371889A1 (en) * 2014-06-20 2015-12-24 Applied Materials, Inc. Methods for shallow trench isolation formation in a silicon germanium layer
JP7333752B2 (ja) * 2019-12-25 2023-08-25 東京エレクトロン株式会社 基板処理方法及び基板処理装置
CN118588523A (zh) * 2021-06-21 2024-09-03 东京毅力科创株式会社 等离子体处理装置和电源系统

Citations (1)

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KR20060081379A (ko) * 2005-01-08 2006-07-12 어플라이드 머티어리얼스, 인코포레이티드 석영 포토마스크 플라즈마 식각을 위한 방법

Also Published As

Publication number Publication date
US7786019B2 (en) 2010-08-31
WO2008077012A2 (en) 2008-06-26
EP1947508A1 (en) 2008-07-23
KR20080056652A (ko) 2008-06-23
WO2008077012A3 (en) 2008-08-07
JP2010514224A (ja) 2010-04-30
US20080142476A1 (en) 2008-06-19

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