KR100943793B1 - 고체 촬상 소자 - Google Patents
고체 촬상 소자 Download PDFInfo
- Publication number
- KR100943793B1 KR100943793B1 KR1020097001779A KR20097001779A KR100943793B1 KR 100943793 B1 KR100943793 B1 KR 100943793B1 KR 1020097001779 A KR1020097001779 A KR 1020097001779A KR 20097001779 A KR20097001779 A KR 20097001779A KR 100943793 B1 KR100943793 B1 KR 100943793B1
- Authority
- KR
- South Korea
- Prior art keywords
- optical sensor
- solid
- state imaging
- imaging device
- light
- Prior art date
Links
- 238000003384 imaging method Methods 0.000 title claims description 48
- 230000003287 optical effect Effects 0.000 claims abstract description 85
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 41
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 41
- 239000010703 silicon Substances 0.000 claims abstract description 41
- 239000010408 film Substances 0.000 claims abstract description 30
- 239000010409 thin film Substances 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims description 16
- 238000002955 isolation Methods 0.000 claims description 13
- 239000012535 impurity Substances 0.000 claims description 12
- 238000005468 ion implantation Methods 0.000 claims description 10
- 239000000758 substrate Substances 0.000 abstract description 30
- 230000035945 sensitivity Effects 0.000 abstract description 15
- 230000004888 barrier function Effects 0.000 abstract description 11
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 5
- 239000011159 matrix material Substances 0.000 abstract description 2
- 230000005540 biological transmission Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 14
- 238000009825 accumulation Methods 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 206010047571 Visual impairment Diseases 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- GGCZERPQGJTIQP-UHFFFAOYSA-N sodium;9,10-dioxoanthracene-2-sulfonic acid Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
- H01L27/14843—Interline transfer
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
- H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Signal Processing (AREA)
- Multimedia (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Element Separation (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
Claims (3)
- 고체 촬상 소자에 있어서,실리콘 박막과,상기 실리콘 박막의 일측으로부터의 광을 수광하는, 상기 실리콘 박막 내에 형성되는 복수개의 광센서와,복수개의 광센서 사이에 형성되는 복수의 제1 소자 분리 영역과,상기 복수의 제1 소자 분리 영역에 적어도 부분적으로 접촉하는, 상기 실리콘 박막의 반대측에 형성되는 절연막과,상기 광센서가 수광하여 생성한 신호 전하를 전송하는 전극, - 상기 전극은 상기 광센서의 하방에 형성되는 것으로서 상기 복수의 제1 소자 분리 영역이 상기 절연막에 접촉하는 측과 반대 측인 상기 절연막 아래에 형성됨 -을 포함한 고체 촬상 소자.
- 제1항에 있어서,상기 복수의 제1 소자 분리 영역은 상기 신호 전하의 전송 방향을 따라 형성되는 고체 촬상 소자.
- 제1항에 있어서,복수의 제2 소자 분리 영역을 더 포함하고,상기 복수의 제2 소자 분리 영역은, 상기 광센서 내의 이온 주입 불순물과 다른 유형의 이온 주입 불순물을 포함하는 상기 복수의 제1 소자 분리 영역에 직교하는 고체 촬상 소자.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001307349A JP4235787B2 (ja) | 2001-10-03 | 2001-10-03 | 固体撮像素子の製造方法 |
JPJP-P-2001-307349 | 2001-10-03 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020047004774A Division KR100895737B1 (ko) | 2001-10-03 | 2002-10-02 | 고체 촬상 소자 및 고체 촬상 소자의 제조 방법 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020097024776A Division KR101015766B1 (ko) | 2001-10-03 | 2002-10-02 | 고체 촬상 소자 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20090023740A KR20090023740A (ko) | 2009-03-05 |
KR100943793B1 true KR100943793B1 (ko) | 2010-02-23 |
Family
ID=19126824
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020097024776A KR101015766B1 (ko) | 2001-10-03 | 2002-10-02 | 고체 촬상 소자 |
KR1020097001779A KR100943793B1 (ko) | 2001-10-03 | 2002-10-02 | 고체 촬상 소자 |
KR1020047004774A KR100895737B1 (ko) | 2001-10-03 | 2002-10-02 | 고체 촬상 소자 및 고체 촬상 소자의 제조 방법 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020097024776A KR101015766B1 (ko) | 2001-10-03 | 2002-10-02 | 고체 촬상 소자 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020047004774A KR100895737B1 (ko) | 2001-10-03 | 2002-10-02 | 고체 촬상 소자 및 고체 촬상 소자의 제조 방법 |
Country Status (6)
Country | Link |
---|---|
US (3) | US7285808B2 (ko) |
JP (1) | JP4235787B2 (ko) |
KR (3) | KR101015766B1 (ko) |
CN (2) | CN101369596B (ko) |
TW (1) | TWI301323B (ko) |
WO (1) | WO2003032395A1 (ko) |
Families Citing this family (58)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005259828A (ja) * | 2004-03-10 | 2005-09-22 | Sony Corp | 固体撮像素子及びその製造方法 |
JP4779304B2 (ja) * | 2004-03-19 | 2011-09-28 | ソニー株式会社 | 固体撮像素子、カメラモジュール及び電子機器モジュール |
JP4525144B2 (ja) * | 2004-04-02 | 2010-08-18 | ソニー株式会社 | 固体撮像素子及びその製造方法 |
JP2006014117A (ja) * | 2004-06-29 | 2006-01-12 | Sony Corp | 物理情報取得方法および物理情報取得装置並びに物理量分布検知の半導体装置 |
JP4779320B2 (ja) | 2004-08-10 | 2011-09-28 | ソニー株式会社 | 固体撮像装置およびその製造方法 |
JP4501633B2 (ja) * | 2004-10-28 | 2010-07-14 | ソニー株式会社 | 固体撮像素子とその製造方法 |
KR100795922B1 (ko) | 2006-07-28 | 2008-01-21 | 삼성전자주식회사 | 이미지 픽업 소자 및 이미지 픽업 소자의 제조방법 |
JP4649441B2 (ja) * | 2006-09-20 | 2011-03-09 | 富士フイルム株式会社 | 裏面照射型撮像素子及びこれを備えた撮像装置 |
JP4649390B2 (ja) * | 2006-09-20 | 2011-03-09 | 富士フイルム株式会社 | 裏面照射型撮像素子の製造方法 |
US7781715B2 (en) | 2006-09-20 | 2010-08-24 | Fujifilm Corporation | Backside illuminated imaging device, semiconductor substrate, imaging apparatus and method for manufacturing backside illuminated imaging device |
US8053287B2 (en) * | 2006-09-29 | 2011-11-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for making multi-step photodiode junction structure for backside illuminated sensor |
JP2008131169A (ja) * | 2006-11-17 | 2008-06-05 | Shimadzu Corp | 撮像素子およびそれを用いた撮像装置 |
JP2008182142A (ja) * | 2007-01-26 | 2008-08-07 | Sony Corp | 固体撮像装置およびその製造方法、および撮像装置 |
US7995251B2 (en) * | 2007-03-30 | 2011-08-09 | Ricoh Company, Limited | Optical scanning device, optical scanning method, and image forming apparatus |
JP5309559B2 (ja) * | 2007-12-27 | 2013-10-09 | ソニー株式会社 | 固体撮像素子の製造方法 |
KR101436504B1 (ko) * | 2008-01-25 | 2014-09-02 | 삼성전자주식회사 | 이미지 센서 |
US20100006908A1 (en) * | 2008-07-09 | 2010-01-14 | Brady Frederick T | Backside illuminated image sensor with shallow backside trench for photodiode isolation |
US8022452B2 (en) * | 2008-12-12 | 2011-09-20 | Omnivision Technologies, Inc. | Elimination of glowing artifact in digital images captured by an image sensor |
KR101776955B1 (ko) * | 2009-02-10 | 2017-09-08 | 소니 주식회사 | 고체 촬상 장치와 그 제조 방법, 및 전자 기기 |
JP5531580B2 (ja) * | 2009-11-25 | 2014-06-25 | ソニー株式会社 | 固体撮像装置、および、その製造方法、電子機器 |
KR101662228B1 (ko) * | 2009-12-21 | 2016-10-05 | 삼성전자주식회사 | 투명한 연결배선을 구비한 이미지 센서 |
JP5110075B2 (ja) * | 2009-12-28 | 2012-12-26 | ソニー株式会社 | 裏面照射型固体撮像装置の製造方法 |
JP2010118675A (ja) * | 2010-01-12 | 2010-05-27 | Sony Corp | 固体撮像素子及びその製造方法 |
JP5115567B2 (ja) * | 2010-02-19 | 2013-01-09 | ソニー株式会社 | 固体撮像装置とその製造方法、並びに半導体装置とその製造方法 |
JP5115566B2 (ja) * | 2010-02-19 | 2013-01-09 | ソニー株式会社 | 固体撮像装置とその製造方法、並びに半導体装置とその製造方法 |
JP5468133B2 (ja) * | 2010-05-14 | 2014-04-09 | パナソニック株式会社 | 固体撮像装置 |
JP2010258463A (ja) * | 2010-06-18 | 2010-11-11 | Sony Corp | 固体撮像素子の製造方法 |
JP5218502B2 (ja) * | 2010-08-30 | 2013-06-26 | ソニー株式会社 | 固体撮像装置の製造方法 |
JP2011040774A (ja) * | 2010-10-06 | 2011-02-24 | Sony Corp | 固体撮像素子、カメラモジュール及び電子機器モジュール |
JP5736755B2 (ja) * | 2010-12-09 | 2015-06-17 | ソニー株式会社 | 固体撮像装置とその製造方法、及び電子機器 |
JP2012156334A (ja) * | 2011-01-26 | 2012-08-16 | Sony Corp | 固体撮像装置、固体撮像装置の製造方法及び電子機器 |
JP2012169530A (ja) * | 2011-02-16 | 2012-09-06 | Sony Corp | 固体撮像装置、および、その製造方法、電子機器 |
JP2011171764A (ja) * | 2011-05-13 | 2011-09-01 | Renesas Electronics Corp | 固体撮像装置 |
CN103493202B (zh) * | 2011-05-31 | 2016-07-27 | 松下知识产权经营株式会社 | 固体摄像装置及其制造方法 |
KR102221993B1 (ko) | 2012-01-23 | 2021-03-02 | 소니 주식회사 | 고체 촬상 장치 및 제조 방법 및 전자 기기 |
JP2014022448A (ja) | 2012-07-13 | 2014-02-03 | Toshiba Corp | 固体撮像装置 |
JP6021613B2 (ja) * | 2012-11-29 | 2016-11-09 | キヤノン株式会社 | 撮像素子、撮像装置、および、撮像システム |
US9786715B2 (en) | 2015-07-23 | 2017-10-10 | Artilux Corporation | High efficiency wide spectrum sensor |
US10707260B2 (en) | 2015-08-04 | 2020-07-07 | Artilux, Inc. | Circuit for operating a multi-gate VIS/IR photodiode |
US9954016B2 (en) | 2015-08-04 | 2018-04-24 | Artilux Corporation | Germanium-silicon light sensing apparatus |
US10761599B2 (en) | 2015-08-04 | 2020-09-01 | Artilux, Inc. | Eye gesture tracking |
US10861888B2 (en) | 2015-08-04 | 2020-12-08 | Artilux, Inc. | Silicon germanium imager with photodiode in trench |
US9893112B2 (en) | 2015-08-27 | 2018-02-13 | Artilux Corporation | Wide spectrum optical sensor |
US10254389B2 (en) | 2015-11-06 | 2019-04-09 | Artilux Corporation | High-speed light sensing apparatus |
US10741598B2 (en) | 2015-11-06 | 2020-08-11 | Atrilux, Inc. | High-speed light sensing apparatus II |
US10418407B2 (en) | 2015-11-06 | 2019-09-17 | Artilux, Inc. | High-speed light sensing apparatus III |
US10739443B2 (en) | 2015-11-06 | 2020-08-11 | Artilux, Inc. | High-speed light sensing apparatus II |
US10886309B2 (en) | 2015-11-06 | 2021-01-05 | Artilux, Inc. | High-speed light sensing apparatus II |
US10687003B2 (en) | 2016-08-04 | 2020-06-16 | Omnivision Technologies, Inc. | Linear-logarithmic image sensor |
FR3057396B1 (fr) * | 2016-10-10 | 2018-12-14 | Soitec | Substrat pour capteur d'image de type face avant et procede de fabrication d'un tel substrat |
JP6390759B2 (ja) * | 2017-06-19 | 2018-09-19 | ソニー株式会社 | 固体撮像装置、及び電子機器 |
JP6779929B2 (ja) | 2018-02-09 | 2020-11-04 | キヤノン株式会社 | 光電変換装置および機器 |
WO2019165220A1 (en) | 2018-02-23 | 2019-08-29 | Artilux, Inc. | Photo-detecting apparatus and photo-detecting method thereof |
US11105928B2 (en) | 2018-02-23 | 2021-08-31 | Artilux, Inc. | Light-sensing apparatus and light-sensing method thereof |
CN114335030A (zh) | 2018-04-08 | 2022-04-12 | 奥特逻科公司 | 光探测装置 |
TWI795562B (zh) | 2018-05-07 | 2023-03-11 | 美商光程研創股份有限公司 | 雪崩式之光電晶體 |
US10969877B2 (en) | 2018-05-08 | 2021-04-06 | Artilux, Inc. | Display apparatus |
JP2020073889A (ja) * | 2019-12-04 | 2020-05-14 | 株式会社東芝 | 光検出器およびこれを用いたライダー装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20000057977A (ko) * | 1999-02-09 | 2000-09-25 | 이데이 노부유끼 | 고체 촬상 장치 및 그 제조 방법 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02278768A (ja) * | 1989-04-19 | 1990-11-15 | Sony Corp | 固体撮像装置 |
KR930007532B1 (ko) * | 1990-07-12 | 1993-08-12 | 금성일렉트론 주식회사 | Soi 구조를 이용한 3차원 ccd 영상소자 및 그 제조방법 |
JPH05190828A (ja) * | 1992-01-10 | 1993-07-30 | Sharp Corp | 固体撮像素子 |
JPH0778959A (ja) * | 1993-09-09 | 1995-03-20 | Sony Corp | 固体撮像素子 |
JPH11274465A (ja) | 1998-01-20 | 1999-10-08 | Nikon Corp | 固体撮像装置、受光素子、並びに半導体の製造方法 |
US6121126A (en) * | 1998-02-25 | 2000-09-19 | Micron Technologies, Inc. | Methods and structures for metal interconnections in integrated circuits |
JPH10294446A (ja) | 1998-03-13 | 1998-11-04 | Nec Corp | 固体撮像素子 |
US6504194B1 (en) * | 1999-12-01 | 2003-01-07 | Innotech Corporation | Solid state imaging device, method of manufacturing the same, and solid state imaging system |
-
2001
- 2001-10-03 JP JP2001307349A patent/JP4235787B2/ja not_active Expired - Fee Related
-
2002
- 2002-10-02 CN CN2008101290260A patent/CN101369596B/zh not_active Expired - Fee Related
- 2002-10-02 CN CNB028196767A patent/CN100456485C/zh not_active Expired - Fee Related
- 2002-10-02 WO PCT/JP2002/010266 patent/WO2003032395A1/ja active Application Filing
- 2002-10-02 US US10/491,520 patent/US7285808B2/en not_active Expired - Fee Related
- 2002-10-02 KR KR1020097024776A patent/KR101015766B1/ko not_active IP Right Cessation
- 2002-10-02 KR KR1020097001779A patent/KR100943793B1/ko not_active IP Right Cessation
- 2002-10-02 KR KR1020047004774A patent/KR100895737B1/ko not_active IP Right Cessation
- 2002-10-03 TW TW091122844A patent/TWI301323B/zh not_active IP Right Cessation
-
2006
- 2006-01-31 US US11/343,496 patent/US7285438B2/en not_active Expired - Fee Related
-
2007
- 2007-10-22 US US11/975,779 patent/US20080054311A1/en not_active Abandoned
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20000057977A (ko) * | 1999-02-09 | 2000-09-25 | 이데이 노부유끼 | 고체 촬상 장치 및 그 제조 방법 |
Also Published As
Publication number | Publication date |
---|---|
CN1565059A (zh) | 2005-01-12 |
WO2003032395A1 (en) | 2003-04-17 |
US20060125036A1 (en) | 2006-06-15 |
US20050077588A1 (en) | 2005-04-14 |
US20080054311A1 (en) | 2008-03-06 |
JP4235787B2 (ja) | 2009-03-11 |
US7285808B2 (en) | 2007-10-23 |
CN100456485C (zh) | 2009-01-28 |
KR20090127198A (ko) | 2009-12-09 |
KR20040039468A (ko) | 2004-05-10 |
TWI301323B (en) | 2008-09-21 |
JP2003115581A (ja) | 2003-04-18 |
KR100895737B1 (ko) | 2009-04-30 |
CN101369596A (zh) | 2009-02-18 |
KR20090023740A (ko) | 2009-03-05 |
KR101015766B1 (ko) | 2011-02-22 |
CN101369596B (zh) | 2011-08-03 |
US7285438B2 (en) | 2007-10-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100943793B1 (ko) | 고체 촬상 소자 | |
KR102662794B1 (ko) | 촬상 소자 및 촬상 장치 | |
US8835981B2 (en) | Solid-state image sensor | |
US7511750B2 (en) | Photo-electric converting device and its driving method, and its manufacturing method, solid-state image pickup device and its driving method and its manufacturing method | |
WO2013065569A1 (ja) | 固体撮像素子、固体撮像素子の製造方法、及び、電子機器 | |
WO2011158567A1 (ja) | 固体撮像素子及びデジタルカメラ | |
JP2023017991A (ja) | 撮像素子 | |
TW201041128A (en) | Solid-state imaging device, method for manufacturing the same, method for driving the same, and electronic apparatus | |
JP2021141552A (ja) | 撮像素子、撮像装置、コンピュータプログラム及び記憶媒体 | |
JPH0778959A (ja) | 固体撮像素子 | |
JP5309559B2 (ja) | 固体撮像素子の製造方法 | |
JP4645578B2 (ja) | 固体撮像素子および固体撮像素子の製造方法 | |
TWI764550B (zh) | 操作裝置的方法、半導體結構以及互補式金屬氧化物半導體影像感測器 | |
US20170229496A1 (en) | Pixels for high performance image sensor | |
US20210343765A1 (en) | Image sensor | |
JP4751846B2 (ja) | Ccd固体撮像素子 | |
JPH0590551A (ja) | 固体撮像装置 | |
JPH05243550A (ja) | 固体撮像装置 | |
JP2010080791A (ja) | 固体撮像装置、及び電子機器 | |
JPH02299266A (ja) | 固体撮像素子およびその駆動方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A107 | Divisional application of patent | ||
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
AMND | Amendment | ||
E601 | Decision to refuse application | ||
J201 | Request for trial against refusal decision | ||
A107 | Divisional application of patent | ||
AMND | Amendment | ||
B701 | Decision to grant | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20130208 Year of fee payment: 4 |
|
FPAY | Annual fee payment |
Payment date: 20140207 Year of fee payment: 5 |
|
FPAY | Annual fee payment |
Payment date: 20150206 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20160211 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20170203 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20180209 Year of fee payment: 9 |
|
LAPS | Lapse due to unpaid annual fee |