KR100933277B1 - ＧａＮ계 캡 세그먼트 상에 게이트 콘택을 구비한ＡｌＧａＮ/ＧａＮ ＨＥＭＴ 및 그 제조방법 - Google Patents

ＧａＮ계 캡 세그먼트 상에 게이트 콘택을 구비한ＡｌＧａＮ/ＧａＮ ＨＥＭＴ 및 그 제조방법 Download PDF

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KR100933277B1
KR100933277B1 KR1020047000318A KR20047000318A KR100933277B1 KR 100933277 B1 KR100933277 B1 KR 100933277B1 KR 1020047000318 A KR1020047000318 A KR 1020047000318A KR 20047000318 A KR20047000318 A KR 20047000318A KR 100933277 B1 KR100933277 B1 KR 100933277B1
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layer
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algan
hemt
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KR20040013136A (ko
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스미쓰리차드피터
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크리 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
    • H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020047000318A 2001-07-12 2002-03-26 ＧａＮ계 캡 세그먼트 상에 게이트 콘택을 구비한ＡｌＧａＮ/ＧａＮ ＨＥＭＴ 및 그 제조방법 KR100933277B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/904,333 2001-07-12
US09/904,333 US6548333B2 (en) 2000-12-01 2001-07-12 Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment
PCT/US2002/009398 WO2003007383A2 (fr) 2001-07-12 2002-03-26 Transistors a haute mobilite electronique au nitrure d'aluminium-gallium/nitrure de gallium possedant un contact de grille sur un segment superficiel a base de nitrure de gallium et procedes de fabrication de ces derniers

Publications (2)

Publication Number Publication Date
KR20040013136A KR20040013136A (ko) 2004-02-11
KR100933277B1 true KR100933277B1 (ko) 2009-12-22

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KR1020047000318A KR100933277B1 (ko) 2001-07-12 2002-03-26 ＧａＮ계 캡 세그먼트 상에 게이트 콘택을 구비한ＡｌＧａＮ/ＧａＮ ＨＥＭＴ 및 그 제조방법

Country Status (9)

Country Link
US (2) US6548333B2 (fr)
EP (1) EP1405349B1 (fr)
JP (1) JP4445257B2 (fr)
KR (1) KR100933277B1 (fr)
CN (1) CN100429786C (fr)
AU (1) AU2002255935A1 (fr)
CA (1) CA2453318C (fr)
TW (1) TW577127B (fr)
WO (1) WO2003007383A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8890212B2 (en) 2012-09-28 2014-11-18 Samsung Electronics Co., Ltd. Normally-off high electron mobility transistor

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JP4445257B2 (ja) 2010-04-07
WO2003007383A2 (fr) 2003-01-23
US6777278B2 (en) 2004-08-17
EP1405349A2 (fr) 2004-04-07
CN100429786C (zh) 2008-10-29
CN1554121A (zh) 2004-12-08
US20030157776A1 (en) 2003-08-21
US6548333B2 (en) 2003-04-15
US20020066908A1 (en) 2002-06-06
KR20040013136A (ko) 2004-02-11
TW577127B (en) 2004-02-21
JP2004535676A (ja) 2004-11-25
AU2002255935A1 (en) 2003-01-29
CA2453318C (fr) 2014-06-10
CA2453318A1 (fr) 2003-01-23
WO2003007383A3 (fr) 2003-04-17
EP1405349B1 (fr) 2012-08-08

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