KR100920784B1 - 히터를 구비한 정전 척 및 히터를 구비한 정전 척의 제조방법 - Google Patents
히터를 구비한 정전 척 및 히터를 구비한 정전 척의 제조방법 Download PDFInfo
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- KR100920784B1 KR100920784B1 KR1020070082274A KR20070082274A KR100920784B1 KR 100920784 B1 KR100920784 B1 KR 100920784B1 KR 1020070082274 A KR1020070082274 A KR 1020070082274A KR 20070082274 A KR20070082274 A KR 20070082274A KR 100920784 B1 KR100920784 B1 KR 100920784B1
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- electrostatic chuck
- alumina
- esc electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T279/00—Chucks or sockets
- Y10T279/23—Chucks or sockets with magnetic or electrostatic means
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (3)
- 알루미나를 포함하는 소결체로 이루어지는 기체(base)와, 상기 기체 내의 상부측에 설치된 정전 척 전극과, 기체 내의 하부측에 매설된 저항 발열체를 구비하고, 상기 기체는 정전 척 전극으로부터 기체 상면까지의 유전체층과, 정전 척 전극으로부터 기체 하면까지의 지지 부재로 구성된 히터를 구비한 정전 척에 있어서,상기 지지 부재는 상기 유전체층과 접하는 정전 척 전극 근방 영역과, 상기 정전 척 전극 근방 영역보다도 아래쪽인 하부 영역(lower region)에서 탄소 함유량이 다르고,상기 유전체층 내의 탄소 함유량이 1OO wtppm 이하이고,상기 지지 부재의 상기 정전 척 전극 근방 영역의 탄소 함유량이 0보다 크고 0.13 wt% 이하인 범위에 있고, 상기 지지 부재의 상기 하부 영역의 탄소 함유량이 0.03 wt% 이상 0.5 wt% 이하인 범위에 있고, 이 때, 상기 정전 척 전극 근방 영역의 탄소 함유량의 값은 상기 하부 영역의 탄소 함유량의 값보다도 작게 설정되고,상기 저항 발열체는 니오븀 또는 백금을 포함하는 것을 특징으로 하는 히터를 구비한 정전 척.
- 제1항에 있어서, 상기 정전 척 전극이 1O wt% 이상의 알루미나와, 탄화 텅스텐을 포함하는 것을 특징으로 하는 히터를 구비한 정전 척.
- 세라믹스 원료를 소성하여 기체의 유전체층을 형성하는 단계와, 정전 척 전극을 형성하는 단계와, 저항 발열체가 매설된 세라믹스 원료를 소성하여 지지 부재를 형성하는 단계를 갖는 히터를 구비한 정전 척의 제조 방법으로서,상기 지지 부재를 형성하는 단계는 정전 척 전극에 가까운 측에 가소한 세라믹스 원료를, 정전 척 전극으로부터 먼 측에 가소하지 않는 세라믹스 원료를 적층시켜 성형함으로써, 지지 부재의 소성체의 탄소 함유량을 정전 척 전극에 가까운 측과 정전 척 전극으로부터 먼 측에서 서로 다르도록 조정하는 단계를 포함하는 것을 특징으로 하는 히터를 구비한 정전 척의 제조 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2006-00225813 | 2006-08-22 | ||
JP2006225813A JP4394667B2 (ja) | 2006-08-22 | 2006-08-22 | ヒータ付き静電チャックの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20080018108A KR20080018108A (ko) | 2008-02-27 |
KR100920784B1 true KR100920784B1 (ko) | 2009-10-08 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020070082274A KR100920784B1 (ko) | 2006-08-22 | 2007-08-16 | 히터를 구비한 정전 척 및 히터를 구비한 정전 척의 제조방법 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8136820B2 (ko) |
EP (1) | EP1892756B1 (ko) |
JP (1) | JP4394667B2 (ko) |
KR (1) | KR100920784B1 (ko) |
CN (1) | CN100568482C (ko) |
TW (1) | TWI344683B (ko) |
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JP5143029B2 (ja) * | 2008-01-08 | 2013-02-13 | 日本碍子株式会社 | 接合構造及び半導体製造装置 |
JP5222588B2 (ja) * | 2008-03-07 | 2013-06-26 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置の製造方法 |
JP5345449B2 (ja) | 2008-07-01 | 2013-11-20 | 日本碍子株式会社 | 接合構造体及びその製造方法 |
WO2010095719A1 (ja) * | 2009-02-23 | 2010-08-26 | 株式会社ソディック | 着色セラミック真空チャックおよびその製造方法 |
US8637794B2 (en) | 2009-10-21 | 2014-01-28 | Lam Research Corporation | Heating plate with planar heating zones for semiconductor processing |
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DE102010025966B4 (de) | 2010-07-02 | 2012-03-08 | Schott Ag | Interposer und Verfahren zum Herstellen von Löchern in einem Interposer |
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JP6085090B2 (ja) * | 2012-01-31 | 2017-02-22 | 日本特殊陶業株式会社 | ヒータ付き静電チャック |
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US8809747B2 (en) | 2012-04-13 | 2014-08-19 | Lam Research Corporation | Current peak spreading schemes for multiplexed heated array |
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JP6373212B2 (ja) | 2015-03-26 | 2018-08-15 | 日本碍子株式会社 | アルミナ焼結体の製法及びアルミナ焼結体 |
US10674566B2 (en) * | 2017-03-02 | 2020-06-02 | Coorstek Kk | Planar heater |
US11289355B2 (en) | 2017-06-02 | 2022-03-29 | Lam Research Corporation | Electrostatic chuck for use in semiconductor processing |
JP6873178B2 (ja) * | 2019-03-26 | 2021-05-19 | 日本碍子株式会社 | 半導体製造装置用部材、その製法及び成形型 |
CN112259490A (zh) * | 2020-10-12 | 2021-01-22 | 北京巨瓷科技有限公司 | 具有加热功能的静电吸盘及其制备方法 |
JP2023018347A (ja) * | 2021-07-27 | 2023-02-08 | キオクシア株式会社 | 基板支持装置および基板処理装置 |
US20230136703A1 (en) * | 2021-10-28 | 2023-05-04 | Entegris, Inc. | Electrostatic chuck that includes upper ceramic layer that includes a dielectric layer, and related methods and structures |
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2006
- 2006-08-22 JP JP2006225813A patent/JP4394667B2/ja active Active
-
2007
- 2007-08-14 TW TW096129955A patent/TWI344683B/zh active
- 2007-08-16 KR KR1020070082274A patent/KR100920784B1/ko active IP Right Grant
- 2007-08-20 US US11/841,172 patent/US8136820B2/en active Active
- 2007-08-21 EP EP07253297.1A patent/EP1892756B1/en not_active Expired - Fee Related
- 2007-08-22 CN CNB2007101465985A patent/CN100568482C/zh active Active
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US6133557A (en) | 1995-01-31 | 2000-10-17 | Kyocera Corporation | Wafer holding member |
US6134096A (en) | 1995-09-06 | 2000-10-17 | Ngk Insulators, Ltd. | Electrostatic chuck |
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Also Published As
Publication number | Publication date |
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TWI344683B (en) | 2011-07-01 |
CN101131955A (zh) | 2008-02-27 |
EP1892756A2 (en) | 2008-02-27 |
US8136820B2 (en) | 2012-03-20 |
TW200816364A (en) | 2008-04-01 |
KR20080018108A (ko) | 2008-02-27 |
JP4394667B2 (ja) | 2010-01-06 |
EP1892756A3 (en) | 2011-06-01 |
EP1892756B1 (en) | 2015-01-14 |
CN100568482C (zh) | 2009-12-09 |
US20080049374A1 (en) | 2008-02-28 |
JP2008053316A (ja) | 2008-03-06 |
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