KR100890414B1 - 히터 부착 정전척 - Google Patents
히터 부착 정전척 Download PDFInfo
- Publication number
- KR100890414B1 KR100890414B1 KR1020070072164A KR20070072164A KR100890414B1 KR 100890414 B1 KR100890414 B1 KR 100890414B1 KR 1020070072164 A KR1020070072164 A KR 1020070072164A KR 20070072164 A KR20070072164 A KR 20070072164A KR 100890414 B1 KR100890414 B1 KR 100890414B1
- Authority
- KR
- South Korea
- Prior art keywords
- electrode
- heating element
- alumina
- electrostatic chuck
- base
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Resistance Heating (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
Description
Claims (2)
- 알루미나 소결체로 이루어지는 기체와, 이 기체 중의 상부측에 설치된 전극과, 기체 중의 하부측에 매설된 저항 발열체를 포함하며, 상기 기체는 전극에서부터 기체 상면까지의 유전체층과, 전극에서부터 기체 하면까지의 지지 부재로 구성되고,상기 유전체층 중의 탄소 함유량이 100 ppm 이하, 상기 지지 부재 중의 탄소 함유량이 O.03∼0.25 wt%이고,상기 저항 발열체는 코일형으로 형성되고, 주성분이 니오븀이며,상기 전극은, 주성분이 텅스텐 카바이드이고, 5 vol% 이상 20 vol% 이하의 알루미나를 포함하는 것인 히터 부착 정전척.
- 삭제
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006196794 | 2006-07-19 | ||
JPJP-P-2006-00196794 | 2006-07-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20080008298A KR20080008298A (ko) | 2008-01-23 |
KR100890414B1 true KR100890414B1 (ko) | 2009-03-26 |
Family
ID=39042373
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020070072164A KR100890414B1 (ko) | 2006-07-19 | 2007-07-19 | 히터 부착 정전척 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP2008047881A (ko) |
KR (1) | KR100890414B1 (ko) |
CN (1) | CN101110383B (ko) |
TW (1) | TWI352399B (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102615529B1 (ko) | 2023-09-19 | 2023-12-19 | 주식회사 제스코 | 이층 히터 패턴이 구비된 정전척 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10192766B2 (en) * | 2014-10-17 | 2019-01-29 | Sumitomo Osaka Cement Co., Ltd. | Electrostatic chuck device |
KR102376825B1 (ko) * | 2014-11-28 | 2022-03-21 | 엔지케이 인슐레이터 엘티디 | 알루미나 소결체 및 광학 소자용 하지 기판 |
CN104465478B (zh) * | 2014-12-22 | 2017-01-25 | 北京中科信电子装备有限公司 | 一种静电吸盘的加工方法 |
JP6783528B2 (ja) * | 2016-02-29 | 2020-11-11 | 日本碍子株式会社 | セラミック構造体、その製法及び半導体製造装置用部材 |
CN106263036B (zh) * | 2016-08-11 | 2019-03-08 | 深圳市新宜康科技股份有限公司 | 一种电子烟用温控陶瓷发热芯及雾化器 |
JP7015425B1 (ja) * | 2020-09-08 | 2022-02-02 | 日本発條株式会社 | ステージおよびその作製方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6133557A (en) | 1995-01-31 | 2000-10-17 | Kyocera Corporation | Wafer holding member |
KR20050067085A (ko) * | 2003-12-26 | 2005-06-30 | 니뽄 가이시 가부시키가이샤 | 정전 척과 그 제조 방법 및 알루미나 소결 부재와 그 제조방법 |
KR20060067832A (ko) * | 2004-12-14 | 2006-06-20 | 니뽄 가이시 가부시키가이샤 | 알루미나 부재 및 그 제조 방법 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001219331A (ja) * | 2000-02-07 | 2001-08-14 | Ibiden Co Ltd | 静電チャック |
JP2003133196A (ja) * | 2002-06-14 | 2003-05-09 | Ibiden Co Ltd | 半導体製造・検査装置用セラミック基板 |
JP4467453B2 (ja) * | 2004-09-30 | 2010-05-26 | 日本碍子株式会社 | セラミックス部材及びその製造方法 |
-
2007
- 2007-07-09 JP JP2007180309A patent/JP2008047881A/ja active Pending
- 2007-07-11 TW TW096125194A patent/TWI352399B/zh active
- 2007-07-18 CN CN2007101361172A patent/CN101110383B/zh active Active
- 2007-07-19 KR KR1020070072164A patent/KR100890414B1/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6133557A (en) | 1995-01-31 | 2000-10-17 | Kyocera Corporation | Wafer holding member |
KR20050067085A (ko) * | 2003-12-26 | 2005-06-30 | 니뽄 가이시 가부시키가이샤 | 정전 척과 그 제조 방법 및 알루미나 소결 부재와 그 제조방법 |
KR20060067832A (ko) * | 2004-12-14 | 2006-06-20 | 니뽄 가이시 가부시키가이샤 | 알루미나 부재 및 그 제조 방법 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102615529B1 (ko) | 2023-09-19 | 2023-12-19 | 주식회사 제스코 | 이층 히터 패턴이 구비된 정전척 |
Also Published As
Publication number | Publication date |
---|---|
CN101110383B (zh) | 2010-04-14 |
TWI352399B (en) | 2011-11-11 |
CN101110383A (zh) | 2008-01-23 |
JP2008047881A (ja) | 2008-02-28 |
KR20080008298A (ko) | 2008-01-23 |
TW200811989A (en) | 2008-03-01 |
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