TWI352399B - Electrostatic chuck with heater - Google Patents

Electrostatic chuck with heater Download PDF

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Publication number
TWI352399B
TWI352399B TW096125194A TW96125194A TWI352399B TW I352399 B TWI352399 B TW I352399B TW 096125194 A TW096125194 A TW 096125194A TW 96125194 A TW96125194 A TW 96125194A TW I352399 B TWI352399 B TW I352399B
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Taiwan
Prior art keywords
electrode
substrate
resistance heating
alumina
dielectric layer
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TW096125194A
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Chinese (zh)
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TW200811989A (en
Inventor
Nobori Kazuhiro
Kawajiri Tetsuya
Hattori Akiyoshi
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Ngk Insulators Ltd
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Publication of TWI352399B publication Critical patent/TWI352399B/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Resistance Heating (AREA)
  • Compositions Of Oxide Ceramics (AREA)

Description

Π52399 九、發明說明: 本申請根據及主張2006年7月19曰申請的曰本專利 特願第2006-1 96794號及國内優先權主張申請(申請號等 曰後加註)的優先權,其所有内容在此一併做為參考。 【發明所屬之技術領域】 本發明是有關於庫侖式(coulomb)的具加熱器之靜電 固持頭。 【先前技術】 過去以來’在製造半導體等之際,使用了庫侖式 (coulomb)的具加熱器之靜電固持頭。在此種具加熱器之靜 電固持頭中設置由陶瓷組成的基體,且該基體的内部設置 有電極與電阻發熱體。在基體的上面形成有用以載置晶圓 等基板的基板載置面。在前述基體中,從電極至基板載置 面的部分形成有介電層,且從電極至基體的下面的部分形 φ 成有支撐構件(例如參照日本專利特開平U-1 2053號公 報)。 然而,在前述過去的具加熱器之靜電固持頭中,因為 介電層的體積電阻率小’所以會有使基板載置面所載置的 基板的脫著應答性降低的疑慮。因為基板的脫著應答性降 低,且基板從靜電固持頭脫離的時間變長,所以基板的處 理時間變長’每單位時間的基板的處理能力降低。 而且’因為則述電阻發熱體的主成分為銳(N b ),所以 會有使鈮成分擴散到設置電阻發熱體的支撐構件中的疑 7066-8791-PF 5 -1352399 慮。由於此鈮成分的擴散,因此電阻發熱體整體的電阻值 變大,使得擴散部分的發熱密度與所希望的設計值不同。 而且’因為基體的各部位的擴散程度不均基板載置面的 溫度分佈變大,結果可能會產生所謂基板的均熱性降低的 不良情況。基板的均熱性降低,在半導體製程中難以進〜 均句的㈣與膜形成。結果,就會有使所製造的元件的^ 率變差的疑慮。 < 【發明内容】 在此,本發明的目的為提供一種具加熱器之靜電固持 頭,在為了提升基板載置面載置的基板的脫著應答性而提 高介電層的體積電阻率的同時,可以抑制作為前述電阻發 熱體的主成分的鈮擴散到支撐構件中。 為了達成前述目@,本發明的具加熱器之靜電固持 頭,其包括有由含有氧化鋁的燒結體所構成的基體、設置 # 於該基體中的上部侧的電極以及埋設於基體中的下部側的 電阻發熱體。前述基體由從電極至基體上面的介電層與從 電極至基體下面的支樓構件所構成,前述介電層中的碳含 量為lOOppm以下,且前述支撐構件的碳含量為〇〇3〜〇.25 重量百分比(wt%),前述電阻發熱體形成線圈狀,且主成 分為銳。 本發明的具加熱器之靜電固持頭具有下述效果。 1)因為前述支撐構件的碳含量為0 03〜〇 25重量百 分比(wt%),所以可以防止作為前述電阻發熱體的主成分 7066-8791-PF 6 Ϊ352399 的銳擴散。因為藉由防止銳成分擴散,可以使電阻發熱體 具有規定的電阻,~以可以得到所謂達成與所希望的設計 值同樣的發熱密度的效果。而且,可以得到下述效果:使 支樓構件中的氧化銘燒結體被著色成灰黑色至黑色、效率 良好地放射來自電阻發熱體的熱以及改善發熱效率。於 是’就可以得到所謂使被加熱之基板的均熱性變良好的效 果0 2)因為電阻發熱體形成線圈狀,且埋設於支撐構件 中,所以其與由網版印刷等之薄膜所構成的電阻發熱體相 比較,在支撐構件中的電阻發熱體的上側部分與下側部分 確實的結合在-起。而,因為電阻發熱體形成線圈狀並 三次元狀地發散熱,所以其與由網版印刷等之薄膜所構成 的電阻發熱體相比較,τ以有效率的將熱傳導至基板載置 面。 3) 因為介電層中的碳含量減少到! 〇〇ppm以下,所以體 積電阻率變高。因此,在作為庫侖式的靜電固持頭使用的 It況下,可以提升基板載置面所載置的基板的脫著應答性。 4) 因為電阻發熱體的主成分為鈮,所以含有氧化鋁的 基體與前述電阻發熱體之間的膨脹係數差變小。於是,在 電阻發熱體被加熱的情況下,可以大幅度的減低電阻發熱 體之周圍部分與電阻發熱體之間產生的熱形變。因此,對 於重複的熱循環,可以得到壽命長、難以破損且長期可靠 度南的具加熱器之靜電固持頭。 7066-87 91-pF 7 【實施方式】 广下’針對本發明的實施型態進行說明。 L靜電固持頭] 圖1所繪示為表示本發明之實施 電固持頭的平面圖。圖2所繪示為圖 面圖。Π52399 IX. Inventor's Note: This application is based on and claims the priority of the patent application No. 2006-1 96794 and the domestic priority claim (the application number is equal to the post) applied for July 19, 2006. All of its contents are hereby incorporated by reference. TECHNICAL FIELD OF THE INVENTION The present invention relates to a coulomb electrostatically held head with a heater. [Prior Art] In the past, in the manufacture of semiconductors and the like, a coulomb-type electrostatic holding head with a heater was used. A substrate composed of ceramic is provided in the electrostatic holding head having such a heater, and an electrode and a resistance heating body are disposed inside the substrate. A substrate mounting surface on which a substrate such as a wafer is placed is formed on the upper surface of the substrate. In the above-mentioned substrate, a dielectric layer is formed from a portion of the electrode to the substrate mounting surface, and a support member is formed from the electrode to the lower portion of the substrate (for example, refer to Japanese Laid-Open Patent Publication No. H-1 2053). However, in the conventional electrostatic holding head with a heater, since the dielectric resistivity of the dielectric layer is small, there is a concern that the detachment resistance of the substrate placed on the substrate mounting surface is lowered. Since the detachment resistance of the substrate is lowered and the time during which the substrate is detached from the electrostatic holding head becomes long, the processing time of the substrate becomes long, and the processing ability of the substrate per unit time is lowered. Further, since the main component of the resistance heating element is sharp (N b ), there is a concern that the ruthenium component is diffused into the support member provided with the resistance heating element, 7066-8791-PF 5 -1352399. Due to the diffusion of the bismuth component, the resistance value of the entire resistance heating body becomes large, so that the heat generation density of the diffusion portion is different from the desired design value. Further, the degree of diffusion of the respective portions of the substrate is not uniform, and the temperature distribution of the substrate mounting surface is increased. As a result, there is a possibility that the soaking property of the substrate is lowered. The soaking property of the substrate is lowered, and it is difficult to form (4) and film formation in the semiconductor process. As a result, there is a fear that the yield of the manufactured component is deteriorated. < SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide an electrostatic holding head having a heater that increases the volume resistivity of a dielectric layer in order to improve the detachment resistance of a substrate placed on a substrate mounting surface. At the same time, it is possible to suppress the diffusion of the crucible as a main component of the aforementioned resistance heating body into the support member. In order to achieve the above object, the electrostatic holding head with a heater of the present invention includes a base body composed of a sintered body containing alumina, an electrode disposed on the upper side of the base body, and a lower portion embedded in the base body. The side of the resistance heating element. The foregoing substrate is composed of a dielectric layer from the electrode to the upper surface of the substrate and a branch member from the electrode to the underside of the substrate, wherein the carbon content in the dielectric layer is 100 ppm or less, and the carbon content of the support member is 〇〇3 〇 .25% by weight (wt%), the above-mentioned resistance heating body is formed into a coil shape, and the main component is sharp. The electrostatic holding head with a heater of the present invention has the following effects. 1) Since the carbon content of the support member is 0 03 to 〇 25 parts by weight (wt%), it is possible to prevent sharp diffusion of the main component 7066-8791-PF 6 Ϊ 352399 which is the above-mentioned resistance heating element. By preventing the sharp component from diffusing, the resistance heating element can have a predetermined electric resistance, so that an effect of achieving the same heat generation density as a desired design value can be obtained. Further, it is possible to obtain an effect of coloring the oxidized sintered body in the branch member to be grayish black to black, efficiently radiating heat from the resistance heating body, and improving heat generation efficiency. Therefore, the effect of improving the soaking property of the substrate to be heated can be obtained. 2) Since the resistance heating element is formed in a coil shape and embedded in the supporting member, it is formed by a film composed of a film such as screen printing. In comparison with the heating element, the upper side portion and the lower side portion of the resistance heating element in the supporting member are surely joined together. On the other hand, since the resistance heating element is formed in a coil shape and radiates heat in a three-dimensional manner, τ efficiently conducts heat to the substrate mounting surface as compared with the resistance heating element composed of a film such as screen printing. 3) Because the carbon content in the dielectric layer is reduced! 〇〇ppm or less, so the volume resistivity becomes high. Therefore, in the case of It used as a Coulomb type electrostatic holding head, the detachment resistance of the substrate placed on the substrate mounting surface can be improved. 4) Since the main component of the resistance heating element is 铌, the difference in expansion coefficient between the substrate containing alumina and the above-mentioned resistance heating element becomes small. Therefore, when the resistance heating element is heated, the thermal deformation occurring between the peripheral portion of the resistance heating body and the resistance heating body can be greatly reduced. Therefore, for repeated thermal cycling, an electrostatic holding head with a heater having a long life, being difficult to break, and long-term reliability can be obtained. 7066-87 91-pF 7 [Embodiment] The embodiment of the present invention will be described. L Electrostatic Retaining Head] Fig. 1 is a plan view showing an electric holding head of the present invention. Figure 2 is a diagram of the drawing.

2卜® 2所示’關於本發明的實施型態的具加妖 器之靜電固持頭i,其包括 …、 , 秸百由3有氧化鋁的燒結體組成 扪基體3、埋設於該基體3 的上。卩側的電極5與埋設於 6亥基體3的下部側的電阻發熱體7。 [基體] 如圖1、圖2所示,前诚其辦^ 4基體3形成圓盤狀,在基體3 的上面(表面)形成有用以載置晶圓等基板的基板載置面 且從基體3中的電極5至上側,亦即從電極5至基 板載置面9的部分形成有介雷展 凡穷1丨電層11。而且,從電極5至下2 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 On. The electrode 5 on the side of the crucible and the resistance heating element 7 embedded in the lower side of the substrate 3 are placed. [Substrate] As shown in Fig. 1 and Fig. 2, the front substrate 3 is formed into a disk shape, and a substrate mounting surface on which a substrate such as a wafer is placed is formed on the upper surface (surface) of the substrate 3, and the substrate is formed. The electrode 5 in the upper side of the electrode 5, that is, the portion from the electrode 5 to the substrate mounting surface 9, is formed with a dielectric layer 11. Moreover, from the electrode 5 to the bottom

型態的具加熱器之靜 1中沿II-II線的剖 侧,亦即從電極5至基體q沾丁北 、 土媸d的下面(背面)的部分形成有支 撐構件13。 因為刖述’丨電層11中的碳含量減少到lOOppm以下, 所以别述介電層11的體積電阻率變高。因此,本實施型態 的具加熱器之靜電固持頭在作為庫命式(⑽lomb)的靜電 固持頭使用的情’兄下’可以提升基板載置自9所載置的基 板的脫著應答性。 [電極] 圖1圖2所示’在該基體3的上部側埋設有直徑The type of the static portion of the heater 1 is formed along the section II-II, that is, the support member 13 is formed from the electrode 5 to the bottom portion of the base q and the bottom (back surface) of the soil d. Since the carbon content in the electric layer 11 is reduced to less than 100 ppm, the volume resistivity of the dielectric layer 11 is increased. Therefore, the electrostatic holding head with the heater of the present embodiment can improve the detachment responsiveness of the substrate placed on the substrate by the use of the electrostatic holding head of the (10) lomb. . [Electrode] FIG. 1 and FIG. 2 show a diameter embedded in the upper side of the base 3.

< S< S

7066-8791-PF 8 1352399 基體3小的圓板狀的電極5。此電極5的主成分為碳化 鶴’且含有5體積百分比(vol%)以上、20體積百分比(vol %)以下的氧化鋁。在此,電極5中的碳化鎢的含量較佳為 70體積百分比(v〇l% )〜95體積百分比(v〇l% )。 而且’如圖2所示’在基體3的徑向中心部形成從基 體3的下面朝向上方延伸的收容孔15,該收容孔15内配 设有電極用供電構件21。此電極用供電構件21的上端經 由連接構件19而連接電極5。從電極用供電構件21經由 連接構件19將電力供給至電極5,在基體3的介電層u 產生靜電吸附力(庫侖力),以使基板被吸附在基體3的基 板載置面9。 電極5可以使用將含有氧化鋁與碳化鎢的金屬粉末的 印刷膠印刷成網孔狀、梳形狀、圓形狀等的電極。而且, 電極5也可以使用金網或多孔金屬(perf〇rated此“丨)。7066-8791-PF 8 1352399 The base 3 has a small disk-shaped electrode 5. The main component of this electrode 5 is a carbonized crane and contains 5 volume percent (vol%) or more and 20 volume percent (vol%) or less of alumina. Here, the content of tungsten carbide in the electrode 5 is preferably 70% by volume (v〇l%) to 95% by volume (v〇l%). Further, as shown in Fig. 2, a receiving hole 15 extending upward from the lower surface of the base 3 is formed at a radially central portion of the base 3, and an electrode power supply member 21 is disposed in the receiving hole 15. The upper end of the electrode power supply member 21 is connected to the electrode 5 via the connecting member 19. Electric power is supplied from the electrode power supply member 21 to the electrode 5 via the connection member 19, and electrostatic attraction force (Coulomb force) is generated in the dielectric layer u of the base 3 so that the substrate is adsorbed on the substrate mounting surface 9 of the base 3. As the electrode 5, an electrode obtained by printing a printing paste containing a metal powder of alumina and tungsten carbide into a mesh shape, a comb shape, a circular shape or the like can be used. Moreover, the electrode 5 may also be a gold mesh or a porous metal (perf〇rated).

因為前述電極5的主成分為碳化鎢,且含有5體積百 分比(vom)以上、20體積百分比(v〇1%)以下的氧化銘, 所以氧化鋁部分三次元的連結、網狀地貫通碳化鎢層,且 與支樓構件13及介電層u的氧化銘結合在—起。於是, 與只用碳化鎢製成電極的情況相比,可提升電㉟5與支撐 化叙…庙 〜電層11的結合強度。碳化鶴與氧 化紹不會反應,且熱膨脹係數比氧化則、。_, 化鎢形成的電極的接合強许供 ^ /、田反 按。強度低,會有因熱循環而 慮。但是,藉由在基體卩φ 少 中混合氧化鋁,使電極5的埶膨 脹係數接近氧化IS,可以提高長期可靠度。 …Since the main component of the electrode 5 is tungsten carbide and contains 5 volume percent (vom) or more and 20 volume percent (v 〇 1%) or less, the third portion of the alumina is connected and meshed through the tungsten carbide. The layer is combined with the oxidation of the branch member 13 and the dielectric layer u. Thus, the bonding strength of the electric 355 and the supporting structure to the electric layer 11 can be improved as compared with the case where the electrode is made only of tungsten carbide. Carbonized cranes do not react with oxidizing, and the coefficient of thermal expansion is better than that of oxidation. _, the bonding of the electrodes formed by tungsten is strong for ^ /, Tian reverse. The strength is low and there is a concern for thermal cycling. However, by mixing alumina in a small amount of 卩φ, the enthalpy expansion coefficient of the electrode 5 is close to that of oxidized IS, and long-term reliability can be improved. ...

7066-8791-PF 9 1352399 [電阻發熱體] 電阻發熱體7形成線圈狀,且以鈮作為主成分。在此, 電阻發熱體7中的鈮含量較佳為95重量百分比(wt%)以 上。而且,電阻發熱體7中也可以含有除了鈮以外的金屬 成分’例如白金(鉑Pt)。 而且’如圖2所示,電阻發熱體7埋設於支撐構件13 中’配置於電極5的下側。然後,形成從基體3的下面23 朝向上方延伸的收容孔1 7 ’該收容孔17内配設有電阻發 熱體用供電構件25。此電阻發熱體用供電構件25的上端 經由連接構件27而連接電阻發熱體7。從電阻發熱體用供 電構件2 5經由連接構件2 7將電力供給至電阻發熱體7, 電阻發熱體7加熱並供給熱至基板載置面9所載置的基板。 本實施型態的電阻發熱體7形成線圈狀,且埋設於支 撐構件13中。因此其與由網版印刷等之薄膜所構成的電阻 發熱體相比較,可以強固地的結合支撐構件13中的電阻發 熱體7的上側部分29與下側部分31。 而且,因為電阻發熱體7形成線圈狀並三次元狀地發 出熱,所以其與由網版印刷等之薄膜相比較,可以有效率 的將熱傳導至基板載置自9。因為電阻發熱體7含有白金 或铌,所以可以減低其與含有氧化铭之基體3的熱膨脹係 數的差異》 〇支樓構件13的碳含量高達〇.〇3〜〇25重量百分比(wt % )因此,此石反成分與銳成分反應,在電阻發熱體的表面 形成極薄的碳化相與氧化相。此碳化相與氧化相中的銳成7066-8791-PF 9 1352399 [Resistance heating element] The resistance heating element 7 is formed in a coil shape and has 铌 as a main component. Here, the content of ruthenium in the electric resistance heating body 7 is preferably 95% by weight or more (wt%). Further, the resistance heating element 7 may contain a metal component other than ruthenium such as platinum (platinum Pt). Further, as shown in Fig. 2, the resistance heating element 7 is embedded in the support member 13 and disposed on the lower side of the electrode 5. Then, a receiving hole 17' is formed to extend upward from the lower surface 23 of the base 3, and the power supply member 25 for electric resistance heating is disposed in the receiving hole 17. The upper end of the resistance heating element power supply member 25 is connected to the resistance heating body 7 via the connection member 27. Power is supplied from the resistance heating element power supply member 25 to the resistance heating element 7 via the connection member 27, and the resistance heating element 7 is heated and supplied with heat to the substrate placed on the substrate placement surface 9. The resistance heating element 7 of the present embodiment is formed in a coil shape and embedded in the support member 13. Therefore, the upper side portion 29 and the lower side portion 31 of the electric resistance heating body 7 in the support member 13 can be strongly bonded to the electric resistance heating body composed of a film such as screen printing. Further, since the resistance heat generating body 7 is formed in a coil shape and emits heat in a three-dimensional manner, it can efficiently conduct heat to the substrate by 9 as compared with a film such as screen printing. Since the resistance heating body 7 contains platinum or ruthenium, the difference in thermal expansion coefficient from the matrix 3 containing oxidized metal can be reduced. The carbon content of the slab member 13 is as high as 〇.〇3 to 〇25 weight percent (wt%). The stone anti-component reacts with the sharp component to form an extremely thin carbonized phase and an oxidized phase on the surface of the resistance heating element. The sharpening of this carbonized phase and the oxidized phase

7066-8791-PP 分的擴散速度極慢,且磁 ^ ^ 且碳化相難以與氧化鋁反應。因為這 樣的碳化相與氧化相 成卩障膜,所以可以抑制電阻發埶 體7中的銳成分擴散至支標構件13中。 …、 [具加熱器之靜電固持頭的製造方法] 說明關於本實施型離之且 。。 〜、之具加熱益之靜電固持頭的製造 程序。 靜電固持頭1是以與圖 即’製作介電層1 1,從此介 電極5的上方形成支撐構件 〈介電層的製作〉 2上下顛倒的關係來製造。亦 電層11的上方形成電極5,從 13 〇 首先,製作基體3的介電層H。如前述那樣,此介電 層11的碳含量設定為lOOppm以下。 使用高純度(例如99.7%)的氧化紹粉末以及為燒結助 劑的氧化鎮Ug0)原料粉作為陶曼原料粉。於此陶究原料粉 :、作為黏結劑的聚乙稀醇(pVA)、水及分散劑等,利用 轉筒筛混合設定時間(例如:16小時),製作_。在此, 聚乙稀醇(PVA)的混合量較佳為2重量百分比(wt%)。將得 到的漿料使时霧㈣器噴霧乾燥,得到造粒粉後,進行 &amp;燒&amp;燒疋在空氣中等的氧化性環境中,例如在代 的溫度、保持5小時而進行,藉此從造粒粉中除去黏結劑。 +製作出煅燒氧化鋁造粒粉。因為黏結劑中含有碳,所 以藉由除去黏結劑可以減低介電層11的碳含量。 接著’於模具中填充前述般燒氧仙造粒粉,以設定 進行加壓成形以製作出氧化鋁成形體。然後,於碳製 7066-8791-pp 11 1352399 :容器内放置此氧化銘成形體’使用熱壓燒結法進行燒 二燒^是在施加設㈣力下’且藉由在氮氣環境中進行, 传到氣化铭燒結體。如此所製造屮也 來的作為介電層η的 乳化紐燒結體的碳含量為l〇〇ppm以下。 〈電極的形成〉The diffusion rate of the 7066-8791-PP fraction is extremely slow, and the magnetic ^ ^ and the carbonized phase are difficult to react with the alumina. Since such a carbonized phase forms a barrier film with oxidation, it is possible to suppress the sharp component in the resistive body 7 from diffusing into the holder member 13. ..., [Method of Manufacturing Electrostatic Retaining Head with Heater] Description This embodiment is separated from it. . ~, the manufacturing process of the electrostatic retention head with heating benefits. The electrostatic holding head 1 is manufactured by forming a dielectric layer 11 from the top of the dielectric electrode 5 and forming a support member <production of a dielectric layer> 2 upside down. The electrode 5 is also formed above the electric layer 11, and from 13 〇 first, the dielectric layer H of the substrate 3 is formed. As described above, the carbon content of the dielectric layer 11 is set to be 100 ppm or less. As the Tauman raw material powder, a high-purity (e.g., 99.7%) oxidized powder and an oxidized town Ug0) raw material powder as a sintering aid are used. In this case, the raw material powder: a polyethylene glycol (pVA) as a binder, water, a dispersing agent, etc., is mixed with a tumbler screen for a set time (for example, 16 hours) to prepare _. Here, the blending amount of the polyethylene glycol (PVA) is preferably 2% by weight (wt%). The obtained slurry is spray-dried by a mist sprayer to obtain a granulated powder, and then subjected to &amp;steaming &amp; burning in an oxidizing atmosphere such as air, for example, at a submerged temperature for 5 hours. The binder is removed from the granulated powder. + Produced calcined alumina granulated powder. Since the binder contains carbon, the carbon content of the dielectric layer 11 can be reduced by removing the binder. Then, the mold was filled with the above-described burnt oxidized granulated powder, and press-forming was carried out to prepare an alumina molded body. Then, in the carbon 7066-8791-pp 11 1352399: placing the oxidized molded body in the container, using the hot press sintering method to perform the second firing, is applied under the force of (four) and is carried out in a nitrogen atmosphere. To gasification Ming sintered body. The emulsified sintered body as the dielectric layer η produced in this manner has a carbon content of 10 〇〇 ppm or less. <Formation of electrodes>

接著,對前述氧化紹燒結體進行研磨加工,製作出咬 定尺寸的圓盤(例如:034〇,厚6mm)。此時,圓盤的表 面及背面其中之一的面利用研磨加工作成平滑面。 然後,混合作為電極5材料之碳化鶴粉末、含有5體 積百分比(V〇1%)以i 20體積百分比(竭)以下的氧化 鋁粉末與黏結劑以製作出印刷膠’利用網版印刷法在氧化 紹燒結體的平滑面上形成電極5,並乾燥之。 〈支撐構件的形成〉 於模具内設置已形成有電極5的氧化紹燒結體,並填 充氧化料粒粉以覆蓋住電# 5,並以設定壓力進行加壓 成形。如此,形成圖2所示的支撐構件13的上側部分29。 在此的氧化鋁造粒粉為含有黏結劑者,沒有進行煅燒。 氧化鋁造粒粉也可以採用下述的方式製作。 在氧化鋁粉末以及作為燒結助劑的氧化鎂(Mg〇)原料 粉中添加作為黏結劑的聚乙烯醇(PVA)、水及分散劑等’利 用轉筒篩混合設定時間⑽:16小時),製作出毁料。在 此,在使用聚乙烯醇(PVA)作為黏結劑的情況下’聚乙烯醇 (PVA)的混合量較佳為0.7〜3重量百分比(wt%)。將得到 的漿料使用噴霧乾燥器喷霧乾燥,得到氧化鋁造粒粉。 7066-8791-PF 12 jyy 支樓:=支樓構件13的上側部分29上(亦即,圖2中 熱體7,缺後在直的底面)載置線圈狀的電阻發 行加壓成形 填充氧化铭造粒粉,並以設定厂堅力進 由上述’製作出成為基體3的氧化鋁成形體。 〈基體的燒結〉 接著’於碳製的容器内放置前述氧化 熱壓燒結法進行燒結仏體使用 麂、,,°疋在施加設定壓力下,在氮氣 裱境中進行,並葵出产_»_ 丄 ^ ^ … 9在鬲▲中維持設定時間而進行。之後, 將經過兩次燒έ士愈〗p t 燒…製程的氧化鋁燒結體的表面 上進行平面研磨,項墼所磨石 調整氧化鋁燒結體的厚度,形成介電層 11。然後,研磨盏/卜加沾, ’層 乂、洁體的側面,並且藉由進行必 的開孔加工、供雷福彼q, 電固持頭。件21、25的安裝’完成具加熱器之靜 利用以上的製造方&amp; π 1 k方去可以使所得到的介電層的碳含哥 為lOOppm以下,支禮描姓 叉棕構件中的碳含量為0. 03〜0· 25重昔 百分比(wt%)。支撑禮杜丄 構件13中的碳含量可以利用製作 紹造粒粉時的黏結劑的 ⑷〜見合篁來控制H,除了黏 的混合量以外,也可以沾a 、备的選擇燒結時的升溫溫度、裹 體環境中的氧濃度等β 、 利用以上的方法,詉沾Α,丄 黏、劑中的碳在燒結時殘留下— 分,並在作為支撐構件]q 。 3的氧化鋁燒結體中形成作為雜曾 碳而擴散的狀態。因此,41 θ 貝 u此’就可以得到下述效果:氧化鋁 結體被著色成灰黑色至里务 ^ ή L , 疋 …、色、效率良好地放射來自電阻發Next, the sintered body of the above-mentioned oxide is subjected to a polishing process to produce a disk having a predetermined size (for example, 034 Å and a thickness of 6 mm). At this time, the surface of one of the surface and the back surface of the disk is polished to work as a smooth surface. Then, a carbonized crane powder as a material of the electrode 5, an alumina powder containing 5 volume percent (V〇1%) and a volume percentage of (20% by volume) and a binder are mixed to prepare a printing paste' by screen printing method. The electrode 5 is formed on the smooth surface of the oxidized sintered body and dried. <Formation of Support Member> An oxidized sintered body in which the electrode 5 was formed was placed in a mold, and oxidized granule powder was filled to cover the electricity #5, and press-formed at a set pressure. Thus, the upper side portion 29 of the support member 13 shown in Fig. 2 is formed. The alumina granulated powder herein is a binder containing no binder. The alumina granulated powder can also be produced in the following manner. Adding polyvinyl alcohol (PVA), a water, a dispersing agent, etc. as a binder to the alumina powder and the magnesium oxide (Mg〇) raw material powder as a sintering aid, 'mixing time by a tumbler screen (10): 16 hours), Make a ruin. Here, in the case of using polyvinyl alcohol (PVA) as a binder, the blending amount of polyvinyl alcohol (PVA) is preferably 0.7 to 3 weight percent (wt%). The obtained slurry was spray-dried using a spray dryer to obtain an alumina granulated powder. 7066-8791-PF 12 jyy branch: = the upper side portion 29 of the branch member 13 (i.e., the hot body 7 in Fig. 2, which is short on the bottom surface) is placed with a coil-like resistor. The granules were granulated, and the alumina shaped body to be the base 3 was produced by the above-mentioned 'station firm'. <Sintering of Substrate> Next, the above-mentioned oxidizing hot-press sintering method is placed in a container made of carbon to carry out sintering of the crucible, and then, under a set pressure, it is carried out in a nitrogen atmosphere, and the product is produced _»_丄^ ^ ... 9 is performed while maintaining the set time in 鬲▲. Thereafter, the surface of the alumina sintered body which has been subjected to two firings of the smashing process is subjected to surface grinding, and the thickness of the alumina sintered body is adjusted to form the dielectric layer 11. Then, the 盏/布加浸, 'layer 乂, the side of the body is cleaned, and the head is fixed by the necessary opening processing, for the Refubi, and the electric holding head. The installation of the pieces 21 and 25 'completes the static use of the heater. The above-mentioned manufacturing side &amp; π 1 k square can make the obtained dielectric layer have a carbon content of less than 100 ppm, and the support is in the brown component. The carbon content is 0. 03~0·25 percent by weight (wt%). The carbon content in the support ruthenium member 13 can be controlled by (4) to 篁 篁 when the granules are prepared, and the temperature can be controlled in addition to the amount of the viscous mixture. The oxygen concentration in the body environment, etc. β, by the above method, the carbon in the sputum, the viscous agent, remains in the lower part during sintering, and serves as a supporting member]q. In the alumina sintered body of 3, a state of being diffused as hetero-carbon is formed. Therefore, 41 θ u 此 ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ 氧化铝 氧化铝 氧化铝 氧化铝 氧化铝 氧化铝 氧化铝 氧化铝 氧化铝 氧化铝 氧化铝 氧化铝 氧化铝 氧化铝 氧化铝 氧化铝 氧化铝 氧化铝 氧化铝 氧化铝 氧化铝 氧化铝 氧化铝 氧化铝

7066-8791-PF 13 •1352399 熱體7的熱與改善發熱效率。 電阻發熱體7與氧化鋁燒結體中的碳反應,在電阻發 熱體7的表面形成非常薄的碳化相與氧化相。由於此碳化 相與氧化相的金屬的擴散速度極小,產生作為保護層的作 用’可以抑制鈮擴散至支撐構件13中。 實施例7066-8791-PF 13 • 1352399 Heat 7 heat and improve heat efficiency. The resistance heating element 7 reacts with carbon in the alumina sintered body to form a very thin carbonized phase and an oxidized phase on the surface of the electric resistance heating body 7. Since the diffusion speed of the metal of the carbonized phase and the oxidized phase is extremely small, the action of acting as a protective layer can be suppressed to diffuse the ruthenium into the support member 13. Example

接著使用實施例具體的說明本發明。 [實施例1] 首先,作為實施例1,製作多個介電層u與支撐構件 13的碳含量改變的基體3,以驗證電阻發熱體7的銳成分 是否擴散至支撐構件13中。 具體而言,以介電層u中的碳含量未滿100卿。 士撐構件13的碳含量為&quot;3〜〇25重量百分比Μ❹ 頭1作為本發明例1〜以介電層 中的碳含量超過前述範圍的靜電固持頭“乍為比輕 1之具加熱器之靜電固持頭丨的 首先,說明本發明例 製造程序。 使用純度99.7%的氧化紐粉末( 為燒結助劑的氧化_原料粉作為陶二 料粉中氧化鎂(Mg0)的含量為〇〇4 =、Next, the present invention will be specifically described using examples. [Embodiment 1] First, as a first embodiment, a plurality of dielectric layers u and a substrate 3 having a changed carbon content of the support member 13 were produced to verify whether or not the sharp component of the resistance heating body 7 was diffused into the support member 13. Specifically, the carbon content in the dielectric layer u is less than 100 qing. The carbon content of the member member 13 is &quot;3 to 〇25 weight percent Μ❹ Head 1 as the present invention Example 1 to the electrostatic holding head in which the carbon content in the dielectric layer exceeds the above range "乍 is a heater with a lighter weight than 1 First, the manufacturing procedure of the present invention will be described. The oxidized powder of 99.7% purity is used (the oxidation of the sintering aid is used as the content of magnesium oxide (Mg0) in the ceramic powder). =,

百分比(,、水及分散劑等,重量 製作出漿料。 J用轉㈣混合16小時, 7〇66-8791»PF 14 1352399 將得到的漿料使用喷霧乾燥器喷霧乾燥,之後在50(rc 的溫度、保持5小時除去黏結劑,製作出平均粒子徑為約 80微米(#m)的氧化鋁造粒粉。於模具中填充此氧化銘造 粒粉,以200公斤/平方公分(kg/Cm2)的壓力進行加壓成 形0 然後’於碳製的容器内放置此氧化鋁成形體,使用熱 壓燒結法進行燒結。燒結是在施加1 〇〇公斤/平方公分 (kg/cm )壓力下’且藉由在氮氣加廢環境(壓力: 中進行,以300°C/小時速度升溫,在i600t保持2小時而 得到氧化鋁燒結體。 接著,對氧化鋁燒結體進行研磨加工,製作出 Φ 340mm、厚6mm的圓盤。此時,圓盤的表面及背面其中之 一的面利用研磨加工作成表面粗糙度Ra為〇·8微米(私… 以下的平滑面。 然後,混合80體積百分比(v〇1%)的碳化鎢粉末、2〇 體積百分比(vol%)的氧化鋁粉末與作為黏結劑的莊品醇 (Terpined)以製作出印刷膠,利用網版印刷法在氧化鋁燒 結體的平滑面上形成029〇随、厚1〇“的電極5,並乾燥 之0 之後,設置前述已形成有印刷電極5的氧化 士 體,並填充黏結劑的添加量&amp; 3 ° 里馬d重量百分比(wt%)、未施 行煅燒的氧化鋁造粒粉,並以2〇〇公斤/平方公分处心 壓力進行加壓成形。 7 ’然後在電阻發熱 接著,載置線圈狀的電阻發熱體 7066—8791-PF 15 -1352399 體7上填充黏結劑的添加量為3重量百分比(衬%)、未施 行煅燒的氧化鋁造粒粉,並以200公斤/平方公分(kg/cm2) 壓力進行加壓成形。 接著,於碳製的容器内放置此氧化鋁成形體,使用熱 -壓燒結法進行燒結。燒結是在施加100公斤/平方公分 (kg/cm2)壓力下,且在氮氣加壓環境(壓力:i5〇kpa)中進 行,以30(TC/小時速度升溫,在160(rc保持2小時。如此 籲得到埋設有電極5與電阻發熱體7的氧化鋁燒結體。 之後,將經過兩次燒結製程的氧化鋁燒結體的表面在 鑽石研磨石上進行平面研磨力口卫,調整氧化链燒結體的厚 度。然後,研磨氧化鋁燒結體的側面,並且藉由進行必要 的開孔加工、供電構件21、25的拉出,製作出本發明例i 的靜電固持頭1。 而且,本發明例2〜4,以及比較例丨〜8的靜電固持 頭1依照與前述本發明例1相同的程序製作。但是,介電 φ 層11的黏結劑添加量為表1、表2所示的條件。 而且,以下表1〜表3的ESC電極材料之攔所記載的 體積百分比(vol%)的值表示氧化鋁(A12〇3)的含量。舉例來 說,本發明例1中的ESC電極材料,表示含有氧化鋁2〇體 積百分比(vol%)。而且,在後述表3的比較例9中, 電極材料只由碳化鎢(WC)構成。 7066'8791-PF 16 •1352399Percent (, water, dispersant, etc., weight to make a slurry. J is mixed with (4) for 16 hours, 7〇66-8791»PF 14 1352399. The obtained slurry is spray dried using a spray dryer, then at 50 (The temperature of rc was kept for 5 hours to remove the binder, and an alumina granulated powder having an average particle diameter of about 80 μm (#m) was produced. The oxidized granulated powder was filled in a mold at 200 kg/cm 2 ( The pressure of kg/Cm2) is subjected to pressure forming 0. Then, the alumina shaped body is placed in a carbon container and sintered by hot press sintering. The sintering is applied at 1 〇〇 kg/cm 2 (kg/cm). Under the pressure, the aluminum oxide sintered body was obtained by heating in a nitrogen gas addition environment (pressure: 300 ° C / hour, and maintaining at i600 t for 2 hours. Next, the alumina sintered body was polished and produced. A disk of Φ 340 mm and a thickness of 6 mm is produced. At this time, the surface of one of the surface and the back surface of the disk is ground by grinding to have a surface roughness Ra of 〇·8 μm (private...the following smooth surface. Then, 80 volumes are mixed) Percent (v〇1%) tungsten carbide powder 2 〇 volume percent (vol%) of alumina powder and Terpined as a binder to produce a printing paste, which is formed by a screen printing method on a smooth surface of an alumina sintered body. After "electrode 5, and dried 0, the above-mentioned oxide body having formed the printed electrode 5 is set, and the amount of the filler added is &amp; 3 °, the weight percentage (wt%) of the horse, and the calcination is not performed. Alumina granulated powder, and press-formed at a core pressure of 2 〇〇 kg / cm 2 . 7 ' Then in the resistance heat, then placed on the coil-like resistance heating element 7066-8791-PF 15 -1352399 body 7 The filler was added in an amount of 3 wt% (liner %), alumina calcined powder which was not calcined, and pressure-formed at a pressure of 200 kg/cm 2 (kg/cm 2 ). Next, a container made of carbon. The alumina shaped body was placed therein and sintered by a hot-pressure sintering method. The sintering was carried out under a pressure of 100 kg/cm 2 (kg/cm 2 ) and in a nitrogen pressurized environment (pressure: i5 〇 kpa). Warm up at 30 (TC/hour speed, at 160 (rc) The aluminum oxide sintered body in which the electrode 5 and the electric resistance heating body 7 are embedded is called. Then, the surface of the alumina sintered body subjected to the two sintering processes is subjected to planar grinding force on the diamond grinding stone to adjust oxidation. The thickness of the sintered body of the chain. Then, the side surface of the alumina sintered body was ground, and the electrostatic holding head 1 of the present invention i was produced by performing the necessary drilling and drawing of the power supply members 21 and 25. Inventive Examples 2 to 4 and Comparative Examples 8 to 8 were produced in the same manner as in the above-described Example 1 of the present invention. However, the amount of the binder added to the dielectric φ layer 11 was as shown in Tables 1 and 2. Further, the value of the volume percentage (vol%) described in the block of the ESC electrode material in the following Tables 1 to 3 indicates the content of alumina (A12〇3). For example, the ESC electrode material in Example 1 of the present invention means a volume percentage (vol%) containing 2 Å of alumina. Further, in Comparative Example 9 of Table 3 to be described later, the electrode material was composed only of tungsten carbide (WC). 7066'8791-PF 16 • 1352399

本發明例4 2wt% &lt;100ppm &gt;1E+17 8E+15 WC+A1203 20vol% 0. 7wt% 0. 03wt% &gt;1E+17 2E+14 20KV 10Ω 本發明例3 2wt% &lt;100ppm &gt;1E+17 2E+16 WC+A1203 20vol% L lwt% 0. 05wt% ME+17 1E+14 20KV 10Ω 本發明例2 2wt% 〈lOOppm &gt;1E+17 9E+15 WC+A1203 20vol% 2wt% 0.18wt% 1E+17 2E+13 19KV 10Ω 本發明例1 2wt% &lt;100ppm &gt;1E+17 1E+16 WC+A1203 20vol% 3wt% € 0· 25wt% 8E+16 1E+13 15KV 10Ω 黏結劑添加量 氧化鋁粉末是否有煅燒 燒結體中的碳量 200°C ESC電極材料 黏結劑添加量 氧化鋁粉末是否有煅燒 燒結體中的碳量 200°C 絕緣财壓[KV/mm] 鈮的擴散 均熱性(面内不均)ΔΤ HT電阻值(設計計算值:10Ω) 體積電阻率 [ohm-cm] 體積電阻率 [ohm-cm] 介電層 支撐構件Inventive Example 4 2 wt% &lt;100 ppm &gt; 1E+17 8E+15 WC+A1203 20vol% 0. 7wt% 0. 03wt% &gt;1E+17 2E+14 20KV 10Ω Inventive Example 3 2wt% &lt;100ppm &gt ; 1E+17 2E+16 WC+A1203 20vol% L lwt% 0. 05wt% ME+17 1E+14 20KV 10Ω Inventive Example 2 2wt% <100 ppm &gt;1E+17 9E+15 WC+A1203 20vol% 2wt% 0.18wt% 1E+17 2E+13 19KV 10Ω Inventive Example 1 2wt% &lt;100ppm&gt;1E+17 1E+16 WC+A1203 20vol% 3wt% €0·25wt% 8E+16 1E+13 15KV 10Ω Adhesive Adding amount of alumina powder Whether there is carbon in the calcined sintered body 200 ° C ESC electrode material Adhesive addition amount Alumina powder has a carbon content in the calcined sintered body 200 ° C Insulation financial pressure [KV / mm] 铌 diffusion Homogenization (in-plane unevenness) ΔΤ HT resistance value (designed value: 10 Ω) Volume resistivity [ohm-cm] Volume resistivity [ohm-cm] Dielectric layer support member

7066-8791-PF 17 •1352399 表2 比較例8 2wt% 1 0. 16wt% 1E+17 5E+13 W+A1203 20vol% 5wt% 0. 38wt% 4E+15 5E+11 13KV 10Ω 比較例7 2wt% 0.15wt% 8E+16 4E+13 W+A1203 20vol% llwt% 0. 5wt% 1E+15 1E+11 10KV 10Ω 比較例6 1_ 2wt% 1 0· 15wt% 1E+17 6E+13 W+A1203 20vol% 13wt% 0. 6wt% 9E+14 1 8E+10 &gt; oo 0^ 10Ω 比較例5 2wt% 0. 14wt% &gt;1E+17 5E+13 W+A1203 20vol% 0. 3wt% 0. Olwt% ME+17 1 3E+13 15KV 10°C 13Ω 比較例4 2wt% 0.16wt% &gt;1E+17 4E+13 W+A1203 20vol% 2wt% &lt;100ppm &gt;1E+17 4E+13 15KV 15°C 15Ω 比較例3 1 2wt% 0.15wt% 1E+17 1 5E+13 1_ W+A1203 20vol% 2wt% 0.18wt% 9E+16 2E+13 19KV 10Ω 比較例2 1_ 3wt% 0. 20wt% 8E+16 9E+12 W+A1203 20vol% 2wt% 0.19wt% 8E+16 2E+13 18KV 10Ω 比較例1 1_ 5wt% 0. 32wt% 5E+15 5E+11 W+A1203 20vol% 2wt% 0. 20wt% 7E+16 1E+13 17KV 10Ω丨 黏結劑添加量 氧化鋁粉末是否有煅燒 燒結體中的碳量 200°C ESC電極材料 黏結劑添加量 氧化鋁粉末是否有煅燒 燒結體中的碳量 200°C 絕緣耐壓[KV/mm] 鈮的擴散 均熱性(面内不均)ΔΤ 丨?;IT值(設計計算值: ώ 〇 热· 介電層7066-8791-PF 17 • 1352399 Table 2 Comparative Example 8 2wt% 1 0. 16wt% 1E+17 5E+13 W+A1203 20vol% 5wt% 0. 38wt% 4E+15 5E+11 13KV 10Ω Comparative Example 7 2wt% 0.15wt% 8E+16 4E+13 W+A1203 20vol% llwt% 0. 5wt% 1E+15 1E+11 10KV 10Ω Comparative Example 6 1_ 2wt% 1 0· 15wt% 1E+17 6E+13 W+A1203 20vol% 13wt% 0. 6wt% 9E+14 1 8E+10 &gt; oo 0^ 10Ω Comparative Example 5 2wt% 0. 14wt% &gt;1E+17 5E+13 W+A1203 20vol% 0. 3wt% 0. Olwt% ME +17 1 3E+13 15KV 10°C 13Ω Comparative Example 4 2wt% 0.16wt% &gt;1E+17 4E+13 W+A1203 20vol% 2wt% &lt;100ppm &gt;1E+17 4E+13 15KV 15°C 15Ω Comparative Example 3 1 2wt% 0.15wt% 1E+17 1 5E+13 1_ W+A1203 20vol% 2wt% 0.18wt% 9E+16 2E+13 19KV 10Ω Comparative Example 2 1_ 3wt% 0. 20wt% 8E+16 9E+ 12 W+A1203 20vol% 2wt% 0.19wt% 8E+16 2E+13 18KV 10Ω Comparative Example 1 1_ 5wt% 0. 32wt% 5E+15 5E+11 W+A1203 20vol% 2wt% 0. 20wt% 7E+16 1E +13 17KV 10Ω丨 Addition amount of alumina powder Whether there is carbon in the calcined sintered body 200°C ESC electrode material Adhesive addition amount Alumina powder has the amount of carbon in the calcined sintered body 200°C Insulation withstand voltage [KV/mm] Diffusion of helium Homogenization (in-plane unevenness) ΔΤ ;?;IT value (designed value: ώ 〇 Heat·dielectric layer

7066-8791-PF 18 •1352399 在上述實施例1中’介電層11的體積電阻率在室溫 以及200°C ’本發明例1〜4都較比較例1〜8為高。亦即, 错由使介電層11中的碳含量為lOOppm以下,對於庫余式 (cou 1 omb)具加熱器之靜電固持頭1而言,可以得到最適 當高的體積電阻率。 支撐構件13的絕緣耐壓,本發明例1〜4也較比較例 6〜8為高。而且,本發明例1〜4與比較例6〜8相比,均 熱性較好。亦即,藉由使支標構件13中的碳含量為〇 2 5 體積百分比(wt%)以下,可以使支撐構件13的體積電阻 率維持實用上充分的絕緣耐壓,並且由於來自電阻發熱器 7的漏電流少’因此也可以提升均熱性。 關於支撐構件13中的電阻發熱體7的鈮成分的擴 散,本發明例1〜4中全部沒有發生,但是比較例4、5發 生了。而且,關於基板載置面9的均熱性的面内的不均勻 以及電阻發熱體7的電阻值,本發明例丨〜4也較比較例ι 〜8為良好。此均熱性的不均勻降低的理由是支撐構件13 中的電阻發熱體7的銳成分的擴散被抑制,預料是達到了 依照設計的溫度分佈。亦即,使支撐構件13中的碳含量 為0.03體積百分比(wt%)以上,可以顯著地提升具加熱 器之靜電固持頭所吸附的基板的均熱性。 [實施例2 ] 驗證疋否因電極5的材質而使電極5的密著強度改 變。 具體而言,以包括含有5體積百分比(v〇1%)以上、 7066-8791-PF 19 13,52399 2〇體積百分比(v〇1%)以下的氧化鋁與碳化鎢的電極5的 靜電固持頭1作為本發明例5〜7;超過前述範圍的靜電固 持頭1作為比較例9〜1 〇。 各個靜電固持頭1的製造程序依照與前述本發明例1 相同的程^居^希j 裂作。但是,電極5的材質為表3所示的條件。7066-8791-PF 18 • 1352399 In the above-described first embodiment, the volume resistivity of the dielectric layer 11 was room temperature and 200 ° C. Both of the inventive examples 1 to 4 were higher than the comparative examples 1 to 8. That is, the error is such that the carbon content in the dielectric layer 11 is 100 ppm or less, and the optimum volume resistivity can be obtained for the electrostatic holding head 1 having a heater of the cou 1 omb. The insulation withstand voltage of the support member 13 was also higher than the comparative examples 6 to 8 of the present invention examples 1 to 4. Further, in Examples 1 to 4 of the present invention, the heat absorption was better than those of Comparative Examples 6 to 8. That is, by making the carbon content in the support member 13 〇25 vol% (wt%) or less, the volume resistivity of the support member 13 can be maintained at a practically sufficient insulation withstand voltage, and since it is derived from the resistance heater The leakage current of 7 is small, so the soaking property can also be improved. The diffusion of the bismuth component of the electric resistance heating element 7 in the support member 13 did not occur in all of the inventive examples 1 to 4, but the comparative examples 4 and 5 occurred. Further, the in-plane unevenness of the heat-dissipating property of the substrate mounting surface 9 and the resistance value of the resistance heating element 7 are also better than the comparative examples 1 to 8 of the present invention. The reason why the unevenness of the soaking heat is lowered is that the diffusion of the sharp component of the electric resistance heating body 7 in the support member 13 is suppressed, and it is expected that the temperature distribution according to the design is achieved. That is, by making the carbon content in the support member 13 0.03% by volume or more, the soaking property of the substrate to which the electrostatic holding head having the heater is adsorbed can be remarkably improved. [Example 2] It was confirmed whether the adhesion strength of the electrode 5 was changed by the material of the electrode 5. Specifically, the electrostatic holding of the electrode 5 including alumina and tungsten carbide containing 5 volume percent (v〇1%) or more, 7066-8791-PF 19 13,52399 2 volume percent (v〇1%) or less The head 1 was taken as Examples 5 to 7 of the present invention; the electrostatic holding head 1 exceeding the above range was used as Comparative Example 9 to 1 〇. The manufacturing procedure of each of the electrostatic holding heads 1 is the same as that of the first embodiment of the present invention. However, the material of the electrode 5 is the condition shown in Table 3.

7066-8791-PF 20 •1352399 比較例10 2wt% 1__ 杯 &lt;100ppm &gt;1E+17 9E+15 50MPa 2wt% 0.19wt% 9E+16 3E+13 18KV 10Ω 比較例9 2wt% l 〈lOOppm &gt;1E+17 8E+15 WC+A1203 22vol% 80MPa 2wt% 0.19wt% 9E+16 3E+13 19KV 10Ω 本發明例6 2wt% 〈lOOppm &gt;1E+17 9E+15 W+A1203 20vol% 250MPa 2wt% 0.18wt% 1E+17 5E+13 20KV 10Ω 本發明例5 2wt% 〈lOOppm &gt;1E+17 1E+16 W+A1203 lOvol% 200MPa 2wt% 0. 20wt% ME+17 6E+13 20KV 10Ω 黏結劑添加量 氧化鋁粉末是否有煅燒 燒結體中的碳量 200°C ESC電極材料 ESC電極的密著強度(剪力強度) 黏結劑添加量 氧化鋁粉末是否有煅燒 1 燒結體中的碳量 20 Ot 絕緣耐壓[KV/mm] ! 鈮的擴散 均熱性(面内不均)ΔΤ HT電阻值(設計計算值:10Ω) 體積電阻率 [ohm-cm] 體積電阻率 [ohm-cm] 介電層 支撐構件7066-8791-PF 20 • 1352399 Comparative Example 10 2wt% 1__ cup &lt;100ppm &gt;1E+17 9E+15 50MPa 2wt% 0.19wt% 9E+16 3E+13 18KV 10Ω Comparative Example 9 2wt% l <lOOppm &gt; 1E+17 8E+15 WC+A1203 22vol% 80MPa 2wt% 0.19wt% 9E+16 3E+13 19KV 10Ω Inventive Example 6 2wt% <lOOppm &gt;1E+17 9E+15 W+A1203 20vol% 250MPa 2wt% 0.18 Wt% 1E+17 5E+13 20KV 10Ω Inventive Example 5 2wt% <lOOppm &gt;1E+17 1E+16 W+A1203 lOvol% 200MPa 2wt% 0. 20wt% ME+17 6E+13 20KV 10Ω Adhesive Addition Whether the alumina powder has a carbon content in the calcined sintered body 200 ° C ESC electrode material ESC electrode adhesion strength (shear strength) Adhesive addition amount Alumina powder has calcination 1 Sintered body carbon amount 20 Ot Insulation resistance Pressure [KV/mm] ! 扩散 Diffusion homogenization (in-plane unevenness) ΔΤ HT resistance value (designed value: 10 Ω) Volume resistivity [ohm-cm] Volume resistivity [ohm-cm] Dielectric layer support member

7066-8791-PF 21 .1352399 如表3所示,可清楚判斷本發明例5、6、7與比較例 9旦、…目比,電極5的密著強度較高。而且,氧化叙的: 里為22體積百分比(v〇1%)以上’ ESC電極的阻抗變大, 而變的不佳。因為| ESC電極中施加高頻率電流所 抗低者較好。 [測定方法] 而且,以下對實施例1與實施例2中各測定值的測定 方法進行說明。 首先’就氧化銘燒結體中的碳含量而言,其是利用^ 頻加熱紅外線吸收法進行測定。 而且,就體積電阻率而言,其是利用以jIS C2141為 標準的方法,在大氣環境(溫度:23〇c )以及2〇(rc中進行 測定。施加電壓為1〇〇〇V/mm,在電壓施加後經過3〇分鐘 時讀取電流值’算出體積電阻率。 就剪力強度(shear Intensity)而言,其是利用微滴 (microdroplet)法進行測定。測定裝置使用複合材界面特 性評價裝置(東榮產業公司製)。從製作的基體3,以將電 極5為徑向中心的方式,切出必9· 9襲、厚i2min的圓盤, 進行剪力強度的測定。 關於絕緣耐壓,其是利用以JIS C2141為標準的方法, 在大氣環境(溫度:23°C )中進行測定。 關於向電阻發熱體7周圍的鈮的擴散,先將氧化燒結 體中的含有電阻發熱體7的部分切出、並研磨剖面後,於 ΕΡΜΑ 電子探針微分析器(electron probe 7066-8791-PF 22 •1352399 micro-analysis:x線微分析器)中確認是否有鈮的擴散。 關於均熱性,如圖3所示,使靜電固持頭i進入真空 腔3。5中,於低壓(未滿1e_3 T〇rr)下並將控制溫度設定為 i〇〇°c的狀態下,於紅外線照相機中測定基板載置面9中的 溫度。 以下簡單的說明圖3的均熱性測定裝置的構造。 均熱性測定裝置33包括有箱型的真空腔35、配設於 真空腔35上方的紅外線照相機37以及連接靜電固持頭! 的控制器39。真空腔35的上壁面41中形成有開口部43, 該開口部43由藍寶石水晶玻璃(Sapphire GUss)45覆蓋 住。前述紅外線照相機37配設於開口部43上方。真空腔 35的底面41設置有腳部47,該腳部4?上載置靜電固持頭 卜靜電固持頭1的電阻發熱體用供電構件25連接控制器 而言’使用數位萬用電表 ’在大氣環境(溫度:23。(:)7066-8791-PF 21 .1352399 As shown in Table 3, it can be clearly judged that the adhesion strength of the electrode 5 is high in the examples 5, 6, and 7 of the present invention and the comparative example 9 denier. Further, in the oxidation, the resistance of the ESC electrode is increased by 22% by volume (v 〇 1%) or more, and it becomes poor. It is better because the high frequency current is applied to the ESC electrode. [Measurement Method] Further, the measurement methods of the respective measurement values in the first embodiment and the second embodiment will be described below. First, in terms of the carbon content in the oxidized sintered body, it was measured by a frequency-heating infrared absorption method. Further, in terms of volume resistivity, it is measured in the atmosphere (temperature: 23 〇 c) and 2 〇 (rc) by a method using jIS C2141 as a standard. The applied voltage is 1 〇〇〇V/mm, When the voltage is applied for 3 minutes, the current value is read to calculate the volume resistivity. In terms of shear intensity, it is measured by a microdroplet method. The apparatus (manufactured by Toei Sangyo Co., Ltd.) cuts the shear strength from the base 3 to be cut so that the electrode 5 is centered in the radial direction, and the shear strength is measured. The pressure is measured in the atmosphere (temperature: 23 ° C) by the method of JIS C2141. The diffusion of the yttrium around the resistance heating element 7 is first included in the oxidized sintered body. After the portion of 7 was cut out and the profile was polished, it was confirmed in the electron probe microanalyzer (electron probe 7066-8791-PF 22 • 1352399 micro-analysis: x-ray microanalyzer) whether or not there is diffusion of germanium. Heat, As shown in FIG. 3, the electrostatic holding head i is introduced into the vacuum chamber 3. 5, and the substrate is measured in an infrared camera under a low pressure (less than 1e_3 T〇rr) and the control temperature is set to i〇〇°c. The temperature in the mounting surface 9. The structure of the soaking measuring device of Fig. 3 will be briefly described below. The soaking measuring device 33 includes a box-shaped vacuum chamber 35, an infrared camera 37 disposed above the vacuum chamber 35, and an electrostatic connection. The controller 39 of the holding head! The opening 41 is formed in the upper wall surface 41 of the vacuum chamber 35, and the opening 43 is covered with sapphire crystals (Sapphire GUss) 45. The infrared camera 37 is disposed above the opening 43. The bottom surface 41 of the vacuum chamber 35 is provided with a leg portion 47 on which the electrostatic holding head is placed. The resistance heating element of the electrostatic holding head 1 is connected to the controller by the power supply member 25, and the 'Using a digital multimeter' is used in the atmosphere. Environment (temperature: 23. (:)

就電阻發熱體7的電阻值 (TR6847:阿德潘鐵斯特(股)製) 中測定電極端子間的電阻。 【圖式簡單說明】 圖1所繪示為本發明之實施型態的具加熱器之靜電固 持頭的平面圖。 圖2所繪示為圖1中沿I I-Ι I線的剖面圖 圖3所繪示為從側面觀察實施例 定裝置的剖面圖。 中所使用的均熱性測 7066-8791-pf 23 -1352399 【主要元件符號說明】 1:具加熱器之靜電固持頭 3 :基體 5 :電極 7 :電阻發熱體 9:基板載置面 11 :介電層 13 :支撐構件 15 :收容孔 17 :收容孔 19 :連接構件 21.電極用供電構件 23 :下面 25 :電阻發熱體用供電構件 27 :連接構件 29 :上側部分 31 :下側部分 33 :均熱性測定裝置 35 :真空腔 37 :紅外線照相機 39 :控制器 41 :上壁面 43 :開口部 47 :腳部The electric resistance between the electrode terminals was measured in the electric resistance value of the electric resistance heating body 7 (TR6847: manufactured by Adpen Tiested). BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view showing an electrostatic holding head with a heater according to an embodiment of the present invention. 2 is a cross-sectional view taken along line I I-Ι I of FIG. 1. FIG. 3 is a cross-sectional view of the embodiment of the apparatus as viewed from the side. The soaking test used in the calculation of 7066-8791-pf 23 -1352399 [Description of main components] 1: Electrostatic holding head with heater 3: Substrate 5: Electrode 7: Resistive heating element 9: Substrate mounting surface 11: Electrical layer 13: support member 15: receiving hole 17: receiving hole 19: connecting member 21. electrode power supply member 23: lower surface 25: power supply member for resistance heating element 27: connecting member 29: upper side portion 31: lower side portion 33: Homogenization measuring device 35: vacuum chamber 37: infrared camera 39: controller 41: upper wall surface 43: opening portion 47: foot portion

7066-8791-PF 247066-8791-PF 24

Claims (1)

1352399 第 96125194號 '. 100年3月30曰更正替換頁 十、申請專利範圍: h-種具加熱器之靜電固持頭,包括由含有氧化銘的 •燒結體所構成的基體、設置於前述基體中的上部側 極、埋設於前述基體中的下部側的電阻發熱體,冑述 ,由從前述電極至前述基體上面的介電層與從前述電極二 述基體下面的支撐構件所構成, 則 其中前述介電層中的碳含量為1〇〇ppm以下, 撲構件的礙含量為〇·〇3〜0.25重量百分比, 該電阻發熱體形成線圈狀,且主成分為鈮, 其中前述電極的主成分為碳化鎢,且含有5 扯谓百分 比以上、20體積百分比以下的氧化鋁。1352399 No. 96125194 '. March 30, 30 correction correction page 10, the scope of application for patents: h-Electrostatic holding head with heater, including a substrate composed of a sintered body containing oxidation, set in the aforementioned substrate The upper side electrode and the lower side resistance heat generating body embedded in the base body are, for example, composed of a dielectric layer from the electrode to the upper surface of the base body and a support member from the lower surface of the base body of the electrode, wherein The carbon content in the dielectric layer is 1 〇〇ppm or less, and the content of the absorbing member is 〜·〇3 to 0.25 by weight. The electric resistance heating body is formed into a coil shape, and the main component is 铌, wherein the main component of the electrode is It is tungsten carbide and contains 5% or more of alumina and 20% by volume or less. 7066-8791-PF1 257066-8791-PF1 25
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