KR100883155B1 - 정전척 히터 - Google Patents
정전척 히터 Download PDFInfo
- Publication number
- KR100883155B1 KR100883155B1 KR1020070071062A KR20070071062A KR100883155B1 KR 100883155 B1 KR100883155 B1 KR 100883155B1 KR 1020070071062 A KR1020070071062 A KR 1020070071062A KR 20070071062 A KR20070071062 A KR 20070071062A KR 100883155 B1 KR100883155 B1 KR 100883155B1
- Authority
- KR
- South Korea
- Prior art keywords
- electrode
- electrostatic
- heater
- alumina
- alumina sintered
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
Claims (4)
- 알루미나 소결체로 이루어지는 기체(基體)와, 상기 기체의 상부측에 매설되고 도전성 물질을 포함하는 정전 전극과, 기체의 하부측에 매설되며 도전성 물질을 포함하는 히터 전극을 포함하고,상기 기체는 정전 전극으로부터 기체 상면까지의 유전체층과, 정전 전극으로부터 히터 전극까지의 기판층과, 히터 전극으로부터 기체 하면까지의 지지층으로 구성되고,상기 기판층이 되는 알루미나 소결체의 상면에 바인더를 포함하는 도전성 페이스트를 도포하여 정전 전극을 인쇄하고, 상기 알루미나 소결체의 하면에 바인더를 포함하는 도전성 페이스트를 도포하여 히터 전극을 인쇄하고, 이 알루미나 소결체에 하소를 실시한 후, 정전 전극의 상측 및 히터 전극의 하측에 알루미나 분체를 배치한 상태에서 이들 알루미나 분체 및 알루미나 소결체를 가압 성형하고 가압 소성을 실시함으로써, 상기 유전체층 중의 정전 전극 근방에서의 상기 도전성 물질의 확산 면적율을 0.25% 이하로 설정한 것을 특징으로 하는 정전척 히터.
- 제1항에 있어서, 상기 기판층이 되는 알루미나 소결체의 하소 온도를 450℃ 이상으로 설정한 것을 특징으로 하는 정전척 히터.
- 제1항 또는 제2항에 있어서, 상기 정전 전극 중의 도전성 물질을 텅스텐 금 속 또는 텅스텐 카바이드로 한 것을 특징으로 하는 정전척 히터.
- 제1항 또는 제2항에 있어서, 상기 히터 전극 중의 도전성 물질을 텅스텐 금속 또는 텅스텐 카바이드로 한 것을 특징으로 하는 정전척 히터.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2006-00196801 | 2006-07-19 | ||
JP2006196801 | 2006-07-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20080008254A KR20080008254A (ko) | 2008-01-23 |
KR100883155B1 true KR100883155B1 (ko) | 2009-02-10 |
Family
ID=39042372
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020070071062A KR100883155B1 (ko) | 2006-07-19 | 2007-07-16 | 정전척 히터 |
Country Status (3)
Country | Link |
---|---|
KR (1) | KR100883155B1 (ko) |
CN (1) | CN101110382B (ko) |
TW (1) | TWI359473B (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9650302B2 (en) | 2011-03-30 | 2017-05-16 | Ngk Insulators, Ltd. | Method for producing electrostatic chuck and electrostatic chuck |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5972630B2 (ja) * | 2011-03-30 | 2016-08-17 | 日本碍子株式会社 | 静電チャックの製法 |
JP6140457B2 (ja) * | 2013-01-21 | 2017-05-31 | 東京エレクトロン株式会社 | 接着方法、載置台及び基板処理装置 |
SG11201609223XA (en) * | 2014-05-07 | 2016-12-29 | Morgan Advanced Ceramics Inc | Method for manufacturing large ceramic co-fired articles |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100618530B1 (ko) | 2003-12-26 | 2006-08-31 | 니뽄 가이시 가부시키가이샤 | 정전 척과 그 제조 방법 및 알루미나 소결 부재와 그 제조방법 |
KR100617342B1 (ko) | 2003-07-07 | 2006-09-01 | 니뽄 가이시 가부시키가이샤 | 질화알루미늄 소결체, 정전 척, 도전성 부재, 반도체 제조장치용 부재 및 질화알루미늄 소결체의 제조 방법 |
KR100645349B1 (ko) | 2004-06-02 | 2006-11-14 | 니뽄 가이시 가부시키가이샤 | 금속부재 내장 소결체의 제조 방법 |
KR100740522B1 (ko) | 2004-12-14 | 2007-07-19 | 니뽄 가이시 가부시키가이샤 | 알루미나 부재 및 그 제조 방법 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3892609B2 (ja) * | 1999-02-16 | 2007-03-14 | 株式会社東芝 | ホットプレートおよび半導体装置の製造方法 |
JP4970712B2 (ja) * | 2003-06-19 | 2012-07-11 | 日本碍子株式会社 | 窒化アルミニウム焼結体、窒化アルミニウムの製造方法、及び窒化アルミニウムの評価方法 |
JP4278046B2 (ja) * | 2003-11-10 | 2009-06-10 | モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社 | ヒータ機構付き静電チャック |
JP4467453B2 (ja) * | 2004-09-30 | 2010-05-26 | 日本碍子株式会社 | セラミックス部材及びその製造方法 |
-
2007
- 2007-07-11 TW TW096125178A patent/TWI359473B/zh active
- 2007-07-13 CN CN2007101360428A patent/CN101110382B/zh active Active
- 2007-07-16 KR KR1020070071062A patent/KR100883155B1/ko active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100617342B1 (ko) | 2003-07-07 | 2006-09-01 | 니뽄 가이시 가부시키가이샤 | 질화알루미늄 소결체, 정전 척, 도전성 부재, 반도체 제조장치용 부재 및 질화알루미늄 소결체의 제조 방법 |
KR100618530B1 (ko) | 2003-12-26 | 2006-08-31 | 니뽄 가이시 가부시키가이샤 | 정전 척과 그 제조 방법 및 알루미나 소결 부재와 그 제조방법 |
KR100645349B1 (ko) | 2004-06-02 | 2006-11-14 | 니뽄 가이시 가부시키가이샤 | 금속부재 내장 소결체의 제조 방법 |
KR100740522B1 (ko) | 2004-12-14 | 2007-07-19 | 니뽄 가이시 가부시키가이샤 | 알루미나 부재 및 그 제조 방법 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9650302B2 (en) | 2011-03-30 | 2017-05-16 | Ngk Insulators, Ltd. | Method for producing electrostatic chuck and electrostatic chuck |
KR101813289B1 (ko) * | 2011-03-30 | 2017-12-28 | 엔지케이 인슐레이터 엘티디 | 정전 척의 제조법 및 정전 척 |
Also Published As
Publication number | Publication date |
---|---|
TW200818383A (en) | 2008-04-16 |
CN101110382A (zh) | 2008-01-23 |
TWI359473B (en) | 2012-03-01 |
KR20080008254A (ko) | 2008-01-23 |
CN101110382B (zh) | 2010-06-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4762208B2 (ja) | 静電チャックヒータ | |
JP4394667B2 (ja) | ヒータ付き静電チャックの製造方法 | |
KR100544865B1 (ko) | 세라믹히터 및 발열체용 도전 페이스트 | |
US20020043530A1 (en) | Ceramic heater | |
US20030026060A1 (en) | Electrostatic chuck | |
KR20070066890A (ko) | 정전척 | |
JP2008135737A (ja) | 静電チャック及び静電チャックの製造方法 | |
KR100883155B1 (ko) | 정전척 히터 | |
KR100890414B1 (ko) | 히터 부착 정전척 | |
US7633738B2 (en) | Electrostatic chuck and manufacturing method thereof | |
JP2001319967A (ja) | セラミック基板の製造方法 | |
KR100448945B1 (ko) | 세라믹 히터 | |
JP4597253B2 (ja) | ヒータ付き静電チャック | |
KR100447888B1 (ko) | 세라믹 히터 | |
KR100492660B1 (ko) | 세라믹 히터 | |
JP2002033377A (ja) | 静電チャック | |
KR20030007315A (ko) | 세라믹히터의 제조방법 | |
KR20030071597A (ko) | 세라믹히터의 제조방법 | |
KR20030072260A (ko) | 세라믹 히터 | |
KR20030072262A (ko) | 세라믹 히터 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20130130 Year of fee payment: 5 |
|
FPAY | Annual fee payment |
Payment date: 20140117 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20150119 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20160105 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20170103 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20180118 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20190117 Year of fee payment: 11 |