JP4499431B2 - 窒化アルミニウム焼結体、静電チャック、導電性部材、半導体製造装置用部材及び窒化アルミニウム焼結体の製造方法 - Google Patents
窒化アルミニウム焼結体、静電チャック、導電性部材、半導体製造装置用部材及び窒化アルミニウム焼結体の製造方法 Download PDFInfo
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- JP4499431B2 JP4499431B2 JP2004003007A JP2004003007A JP4499431B2 JP 4499431 B2 JP4499431 B2 JP 4499431B2 JP 2004003007 A JP2004003007 A JP 2004003007A JP 2004003007 A JP2004003007 A JP 2004003007A JP 4499431 B2 JP4499431 B2 JP 4499431B2
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- Prior art keywords
- aluminum nitride
- sintered body
- carbon fiber
- nitride sintered
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims description 157
- 238000004519 manufacturing process Methods 0.000 title claims description 29
- 238000000034 method Methods 0.000 title claims description 29
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 229920000049 Carbon (fiber) Polymers 0.000 claims description 141
- 239000004917 carbon fiber Substances 0.000 claims description 141
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 98
- 239000000835 fiber Substances 0.000 claims description 37
- 239000000843 powder Substances 0.000 claims description 33
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 30
- 238000010304 firing Methods 0.000 claims description 26
- 239000002994 raw material Substances 0.000 claims description 26
- 239000012298 atmosphere Substances 0.000 claims description 21
- 238000010438 heat treatment Methods 0.000 claims description 16
- 239000002041 carbon nanotube Substances 0.000 claims description 11
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 11
- 238000002156 mixing Methods 0.000 claims description 9
- 230000005684 electric field Effects 0.000 claims description 6
- 230000008030 elimination Effects 0.000 claims description 3
- 238000003379 elimination reaction Methods 0.000 claims description 3
- 230000003068 static effect Effects 0.000 claims description 3
- 239000000463 material Substances 0.000 description 21
- 229910052799 carbon Inorganic materials 0.000 description 18
- 239000013078 crystal Substances 0.000 description 15
- 238000005260 corrosion Methods 0.000 description 14
- 230000007797 corrosion Effects 0.000 description 14
- 239000011812 mixed powder Substances 0.000 description 13
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 12
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 11
- 239000002245 particle Substances 0.000 description 10
- 239000004020 conductor Substances 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 8
- 238000005452 bending Methods 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 7
- 238000002360 preparation method Methods 0.000 description 7
- 229910052761 rare earth metal Inorganic materials 0.000 description 7
- 238000005245 sintering Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 4
- 150000002367 halogens Chemical class 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000005121 nitriding Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 2
- 229910052692 Dysprosium Inorganic materials 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- 229910052772 Samarium Inorganic materials 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 2
- 238000013329 compounding Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000001308 synthesis method Methods 0.000 description 2
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical group [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 238000007088 Archimedes method Methods 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052773 Promethium Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000001241 arc-discharge method Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000002134 carbon nanofiber Substances 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000002048 multi walled nanotube Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- -1 other conductors Chemical compound 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 238000013001 point bending Methods 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- VQMWBBYLQSCNPO-UHFFFAOYSA-N promethium atom Chemical compound [Pm] VQMWBBYLQSCNPO-UHFFFAOYSA-N 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 229910001954 samarium oxide Inorganic materials 0.000 description 1
- 229940075630 samarium oxide Drugs 0.000 description 1
- FKTOIHSPIPYAPE-UHFFFAOYSA-N samarium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Sm+3].[Sm+3] FKTOIHSPIPYAPE-UHFFFAOYSA-N 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 239000011163 secondary particle Substances 0.000 description 1
- 238000007873 sieving Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002109 single walled nanotube Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000001694 spray drying Methods 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
- C04B35/645—Pressure sintering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
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- C04B35/71—Ceramic products containing macroscopic reinforcing agents
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- C04B35/80—Fibres, filaments, whiskers, platelets, or the like
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- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
- H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
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- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
- H05B3/145—Carbon only, e.g. carbon black, graphite
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
- C04B2235/3225—Yttrium oxide or oxide-forming salts thereof
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- C04B2235/38—Non-oxide ceramic constituents or additives
- C04B2235/3852—Nitrides, e.g. oxynitrides, carbonitrides, oxycarbonitrides, lithium nitride, magnesium nitride
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- C04B2235/52—Constituents or additives characterised by their shapes
- C04B2235/5208—Fibers
- C04B2235/5216—Inorganic
- C04B2235/524—Non-oxidic, e.g. borides, carbides, silicides or nitrides
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Description
カーボンナノチューブとして使用するのは、単層カーボンナノチューブでも多層カーボンナノチューブでもどちらでも可能である。また、その製造方法も特に限定はなく、アーク放電法、レーザアブレーション法、プラズマ合成法、炭化水素触媒分解法等種々の方法で作製されたものを使用できる。
<混合粉末の調製条件>
まず、窒化アルミニウム粉末と炭素繊維と酸化イットリウム粉末を混合し、混合粉を作製した。窒化アルミニウム粉末としては、還元窒化法で合成した、平均粒径1.2μmの市販のもの(徳山ソーダ製、高純度AlN粉)を使用した。炭素繊維としては、気相法で作製された繊維径約150nm、繊維長10〜20μm、アスペクト比10〜500、体積抵抗率が1×10-4Ωcmのもの(昭和電工製、VGCF)を使用した。さらに、酸化イットリウム粉末としては、純度99.9%以上、平均粒径0.7μmのもの(スタルク製Cグレード)を使用した。
混合粉末を成形型に入れ、200kgf/cm2の圧力で一軸加圧成形し、直径φ50mm、厚さ約20mmの円盤状成形体を作製した。
得られた焼結体について、密度、開気孔率、体積抵抗率、曲げ強度、熱伝導率、熱拡散率、酸素含有量、炭素含有量、Y含有量、Y2O3含有量を評価した。各評価の具体的な測定方法は以下のとおりである。
実施例1〜18とほぼ同様な条件を用いて窒化アルミニウム焼結体を作製した。
図4に、実施例1〜18、及び比較例1〜13における炭素添加量と窒化アルミニウム焼結体の室温での体積抵抗率との関係を示す。球形の炭素粒子を添加した場合は、1重量部の添加量を加えても体積抵抗率に変化は見られなかったのに対し、炭素繊維を添加した場合は、炭素添加量が約0.4〜0.5重量部(約0.4〜0.5%)付近を超えると急激に体積抵抗率が103〜10-1Ωcm程度の導電領域まで低下した。また、一旦導電パスが形成されると、炭素繊維の添加量を増やしても比較的安定した体積抵抗率を示す傾向が見られた。
実施例19〜21では、実施例1〜18に較べ炭素繊維の添加量を増やした。窒化アルミニウム粉末100重量部に対し、炭素繊維を2〜10重量部、酸化イットリウム粉末を2重量部、及びイソプロピルアルコールを加えて混合粉末を作製した。その他の混合粉末の作製条件は、実施例1〜18と同様な条件を用いた。
図7に、実施例19〜21及び、参考として実施例1〜6の炭素繊維添加量と窒化アルミニウム焼結体の室温での体積抵抗率との関係を示す。ここに挙げた実施例は、いずれも酸化イットリウムの添加量が2重量部であり、焼成温度2000℃で焼成を行ったものである。炭素繊維添加量が約0.4〜0.5重量部付近を超えると急激に体積抵抗率が103Ωcm以下の導電領域まで低下し、さらに炭素繊維添加量を増やすと体積抵抗率の低下傾向は緩和するものの、炭素繊維添加量が10重量部(8.9%)となるまで徐々に炭素添加率の増加に伴い体積抵抗率は減少した。こうして、炭素繊維添加量が10重量部の場合、体積抵抗率は3×10−2Ωcmに達した。これらの結果より、20重量部を超え、焼結体中の炭素繊維の含有率が20%程度に達すると、含有炭素繊維を増やすことでの導電性の低下効果は極めて少なくなることが予想される。
20 炭素繊維
Claims (16)
- 炭素繊維を含有することにより体積抵抗率が制御されており、前記炭素繊維の平均繊維径が、5nm以上200nm以下であることを特徴とする窒化アルミニウム焼結体。
- 前記炭素繊維は、カーボンナノチューブであることを特徴とする請求項1に記載の窒化アルミニウム焼結体。
- 炭素繊維を含有することにより体積抵抗率が制御されており、前記炭素繊維は、アスペクト比が10以上、平均繊維径が100nm以上200nm以下であり、前記炭素繊維の含有率が0.4%以上1%以下であることを特徴とする窒化アルミニウム焼結体。
- 炭素繊維を含有することにより体積抵抗率が制御されており、前記炭素繊維は、アスペクト比が10以上、平均繊維径が100nm以上200nm以下であり、前記炭素繊維の含有率が1%以上10%以下であることを特徴とする窒化アルミニウム焼結体。
- 熱伝導率が100W/mK以上であることを特徴とする請求項1〜3のいずれか1項に
記載の窒化アルミニウム焼結体。 - 開気孔率が0.1%以下であることを特徴とする請求項1〜5のいずれか1項に記載の窒化アルミニウム焼結体。
- 請求項1〜6のいずれか1項に記載の窒化アルミニウム焼結体である誘電体層と、
前記誘電体層の一方の面上に形成される電極とを有することを特徴とする静電チャック。 - 請求項1〜6のいずれか1項に記載の窒化アルミニウム焼結体で形成された導電性部材。
- 請求項8に記載の導電性部材で形成された半導体製造装置用部材。
- 請求項8に記載の導電性部材で形成された除電部材。
- 請求項8に記載の導電性部材で形成された電界制御部材。
- 請求項8に記載の導電性部材で形成された抵抗発熱体。
- 窒化アルミニウム原料粉と平均繊維径が5nm以上200nm以下である炭素繊維とを混合し、混合原料粉を作製する工程と、
前記混合原料粉を成形し、成形体を形成する工程と、
前記成形体を真空雰囲気、不活性雰囲気または還元雰囲気で、昇温及び焼成し、焼結体を形成する工程と
を有することを特徴とする窒化アルミニウム焼結体の製造方法。 - 前記炭素繊維は、カーボンナノチューブであることを特徴とする請求項13に記載の窒化アルミニウム焼結体の製造方法。
- 窒化アルミニウム原料粉とアスペクト比が10以上、平均繊維径が100nm以上200nm以下の炭素繊維とを前記炭素繊維の含有率が0.4%以上1%以下となるように混合し、混合原料粉を作製する工程と、
前記混合原料粉を成形し、成形体を形成する工程と、
前記成形体を真空雰囲気、不活性雰囲気または還元雰囲気で、昇温及び焼成し、焼結体を形成する工程と
を有することを特徴とする窒化アルミニウム焼結体の製造方法。 - 窒化アルミニウム原料粉とアスペクト比が10以上、平均繊維径が100nm以上200nm以下の炭素繊維とを前記炭素繊維の含有率が1%以上10%以下となるように混合し、混合原料粉を作製する工程と、
前記混合原料粉を成形し、成形体を形成する工程と、
前記成形体を真空雰囲気、不活性雰囲気または還元雰囲気で、昇温及び焼成し、焼結体を形成する工程と
を有することを特徴とする窒化アルミニウム焼結体の製造方法。
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TW093106929A TWI244720B (en) | 2003-07-07 | 2004-03-16 | Aluminum nitride sintered body, electrostatic chuck conductive component, component for semiconductor fabrication device, and method for producing aluminum nitride sintered body |
US10/876,260 US7250215B2 (en) | 2003-07-07 | 2004-06-24 | Aluminum nitride sintered body containing carbon fibers and method of manufacturing the same |
KR1020040051408A KR100617342B1 (ko) | 2003-07-07 | 2004-07-02 | 질화알루미늄 소결체, 정전 척, 도전성 부재, 반도체 제조장치용 부재 및 질화알루미늄 소결체의 제조 방법 |
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- 2004-01-08 JP JP2004003007A patent/JP4499431B2/ja not_active Expired - Lifetime
- 2004-03-16 TW TW093106929A patent/TWI244720B/zh not_active IP Right Cessation
- 2004-06-24 US US10/876,260 patent/US7250215B2/en active Active
- 2004-07-02 KR KR1020040051408A patent/KR100617342B1/ko active IP Right Grant
- 2004-07-06 EP EP04254045A patent/EP1496033B1/en not_active Expired - Lifetime
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JP2016086080A (ja) * | 2014-10-27 | 2016-05-19 | 住友大阪セメント株式会社 | 静電チャック装置およびその製造方法 |
Also Published As
Publication number | Publication date |
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US7250215B2 (en) | 2007-07-31 |
TWI244720B (en) | 2005-12-01 |
US20050014628A1 (en) | 2005-01-20 |
EP1496033A2 (en) | 2005-01-12 |
KR20050005794A (ko) | 2005-01-14 |
EP1496033B1 (en) | 2013-03-13 |
JP2005041765A (ja) | 2005-02-17 |
EP1496033A3 (en) | 2007-07-11 |
TW200503144A (en) | 2005-01-16 |
KR100617342B1 (ko) | 2006-09-01 |
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