JP6873178B2 - 半導体製造装置用部材、その製法及び成形型 - Google Patents
半導体製造装置用部材、その製法及び成形型 Download PDFInfo
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- JP6873178B2 JP6873178B2 JP2019058056A JP2019058056A JP6873178B2 JP 6873178 B2 JP6873178 B2 JP 6873178B2 JP 2019058056 A JP2019058056 A JP 2019058056A JP 2019058056 A JP2019058056 A JP 2019058056A JP 6873178 B2 JP6873178 B2 JP 6873178B2
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- shaft
- disk
- molded body
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- electrode
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Images
Classifications
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
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Description
電極を内蔵するセラミック製の円板と前記円板を支持するセラミック製で円筒状のシャフトとを備えた半導体製造装置用部材であって、
前記半導体製造装置用部材は、接合界面を有さないものであり、
前記円板のうち前記シャフトが一体化されている面は、シャフト内側領域とシャフト外側領域とを有し、
前記シャフト内側領域は、前記シャフト外側領域よりも一段凹んだ形状になっており、前記電極を露出させる電極露出穴を有する、
ものである。
上述した半導体製造装置用部材を製造するのに用いられる成形型であって、
前記円板のうちシャフト側の円環層を形成するための空間である円環層成形空間と、
前記円環層成形空間に連通し、前記シャフトを形成するための空間であるシャフト成形空間と、
を備えたものである。
(a)上述した成形型を用いて、前記円環層成形空間によって成形される未焼成円環層と前記シャフト成形空間によって成形される未焼成シャフトとがつなぎ目のない状態で一体化された基礎成形体を、モールドキャスト法により作製する工程と、
(b)前記未焼成円環層の上面に、電極又はその前駆体を備えた円板成形体を積層して最終成形体を得る工程と、
(c)前記最終成形体を仮焼したあと円板側が下になるように水平支持面に載置した状態で焼成することにより、接合界面を有さない焼成体を得る工程と、
(d)前記焼成体の円板のうちシャフトが一体化されている面のシャフト内側領域に前記電極を露出させる電極露出穴を開けることにより、半導体製造装置用部材を得る工程と、
を含むものである。
まず、セラミックヒータ10を製造するのに用いられる基礎成形体30を作製する。基礎成形体30は、図3に示すように、未焼成円環層32と未焼成シャフト34とがつなぎ目のない状態で一体に成形されたものである。未焼成円環層32は、円板12のうち下面12bのシャフト内側領域A1を含む面よりもシャフト側の円環層12c(図2参照)に対応する成形体であり、未焼成シャフト34は、シャフト20に対応する成形体である。未焼成円環層32は、中心部に比べて外周縁が反り上がった形状になっている。具体的には、未焼成円環層32の表面32a(上面)は未焼成シャフト34に向かって円錐台状に窪んだ凹面となっており、表面32b(下面)は未焼成シャフト34に向かって膨出した凸面となっている。2つの表面32a,32bは、平行になっている。未焼成円環層32の表面32a,32bのそれぞれにおいて、中心位置とその中心位置から半径外方向に150mm離れた位置との高低差dが0.7mm以上2.6mm以下であること、あるいは、中心部と外周縁とを結んだ線分が水平面となす傾斜角度θが0.25°以上1°以下の範囲内の所定角度となっていることが好ましい。未焼成円環層32の表面32aには、後述する未焼成の円板成形体50が有機系接着剤により接着される。
(1)乾燥
最終成形体70に含まれる分散媒を蒸発させる。使用する分散媒種により乾燥温度や乾燥時間は適宜設定すればよい。ただし、乾燥温度が高すぎるとクラックの原因となるため好ましくない。また、雰囲気は大気、不活性雰囲気、真空、水素雰囲気のいずれでもよい。
(2)脱脂
分散媒を蒸発させたあとの最終成形体70に含まれる有機系接着剤、バインダ、分散剤及び触媒を分解させる。分解温度としては、例えば400〜600℃、雰囲気は大気、不活性雰囲気、真空、水素雰囲気のいずれでもよいが、電極を埋設する場合や非酸化物系セラミックを使用する場合は不活性雰囲気か真空のいずれかとする。
(3)仮焼
脱脂したあとの最終成形体70を750〜1300℃で熱処理(仮焼)を行うことにより仮焼体74(図6(a)参照)を得る。仮焼するのは、強度を高くしてハンドリングしやすくするためである。雰囲気は大気、不活性雰囲気、真空、水素雰囲気のいずれでもよいが、電極を埋設する場合や非酸化物系セラミックを使用する場合は不活性雰囲気か真空のいずれかとする。仮焼体74は、最終成形体70と同様の形状である。なお、乾燥後、脱脂と仮焼を一度に行ってもよい。
仮焼体74を円板が下、シャフトが上になるように配置した状態で、仮焼体74を焼成してセラミックヒータ80を得る。焼成時の最高温度は粉末の種類、粉末の粒子径により適宜設定するが、1000〜2000℃の範囲に設定することが好ましい。仮焼体74のうち中心部に比べて外周縁が反り上がった形状の円板部分は焼成によってほぼフラットになる。雰囲気は大気、不活性雰囲気、真空のいずれでもよい。また、焼成時の変形をより抑制し円板部分をよりフラットにするため、図6(a)のように、フラットな水平支持板76(例えばBN材からなる板)に、仮焼体74の円板部分を下、シャフト部分を上にして載せ、ドーナツ状の錘78を円板部分に載せて荷重を加えた状態で常圧焼成するのが好ましい。こうすることにより、接合界面をもたないセラミックヒータ80が得られる(図6(b)参照)。錘78の重さが重すぎると、加重されている円板部分とフリーのシャフト部分との間に収縮差が生じて割れるおそれがある。そのため、5〜10kgの範囲で適宜設定するのが好ましい。錘78は、装着や脱着を考慮すると、直径に沿って2つ以上に分割可能な形状になっていることが好ましい。
セラミックヒータ80のシャフト内側領域の所定位置にドリルなどを用いて電極露出穴14a,16aを設ける。また、シャフト20の開口部20bの周囲に設けられたフランジの形状を研削して整える。これにより、セラミックヒータ10が完成する。
1.成形工程
まず、窒化アルミニウム粉末(純度99.7%)100質量部と、酸化イットリウム5質量部と、分散剤(ポリカルボン酸系共重合体)2質量部と、分散媒(多塩基酸エステル)30質量部とを、ボールミル(トロンメル)を用いて14時間混合することにより、セラミックスラリー前駆体を得た。このセラミックスラリー前駆体に対して、イソシアネート(4,4’−ジフェニルメタンジイソシアネート)4.5質量部、水0.1質量部、触媒(6−ジメチルアミノ−1−ヘキサノール)0.4質量部を加えて混合することにより、セラミックスラリーを得た。このセラミックスラリーを用いて、図5に示した手順にしたがって最終成形体70を作製した。成形型40の傾斜角度θは0.5°とした。成形型40の円形面の中心位置とその中心位置から半径外方向に150mm離れた位置との高低差dは1.3mmであった。また、ヒータ電極14はMoコイルを使用し、RF電極16はMoメッシュを使用した。
得られた最終成形体70を100℃で10時間乾燥し、続いて最高温度500℃で脱脂し、更に最高温度820℃、窒素雰囲気で仮焼することにより、仮焼体74を得た。
図6に示すように、BN製のフラットな水平支持板76に、仮焼体74の円板部分を下、シャフト部分を上にして載せ、ドーナツ状の錘78(10kg)を円板部分に載せて荷重を加えた状態で、窒素ガス中で常圧焼成により1860℃で6時間焼成した。これにより、セラミックヒータ80(円板12の直径は300mm)を得た。セラミックヒータ80に電極露出穴14a,16aを開けることにより、セラミックヒータ10を得た。
1.成形工程
実験例1と同様にしてセラミックスラリー前駆体を調製した。このセラミックスラリー前駆体に対して、イソシアネート(ヘキサメチレンジイソシアネート)4.5質量部、水0.1質量部、触媒(6−ジメチルアミノ−1−ヘキサノール)0.4質量部を加えて混合することにより、セラミックスラリーを得た。このセラミックスラリーを用いて、図5に示した手順にしたがって最終成形体70を作製した。成形型40の傾斜角度θは0.5°、高低差dは1.3mmとした。ヒータ電極14及びRF電極16はMoペースト(窒化アルミニウム粉末(純度99.7%)を含む)をスクリーン印刷して形成した。そのため、ヒータ電極用溝51aやRF電極用溝52aは省略した。
得られた最終成形体70を100℃で10時間乾燥し、続いて最高温度1300℃、水素雰囲気で脱脂・仮焼することにより、仮焼体74を得た。
実験例1と同様にして焼成したあと電極露出穴14a,16aを開けることにより、実験例2のセラミックヒータ10を得た。実験例2のセラミックヒータ10は、強度335MPa、平均粒子径4.3μm、焼成後の反り0.04mmであった。また、最終成形体70に気泡は見られなかった。なお、このセラミックヒータ10も実験例1と同様、接合界面が見られなかった。
1.成形工程
窒化アルミニウム粉末95重量%に、焼結助剤として酸化イットリウム5重量%を加え、ボールミルを用いて混合した。得られた混合粉末に、バインダを添加し、噴霧造粒法により造粒した。得られた造粒粉を脱脂し、金型成形及びCIPにより円板状成形体と管状成形体とを成形した。円板状成形体の内部にはRF電極としてMoメッシュ、ヒータ電極としてMoコイルを埋設した。
円板状成形体を窒素ガス中でホットプレス法により1860℃で6時間焼成することにより、円板状焼成体とした。また、管状成形体を窒素ガス中で常圧焼成により1860℃で6時間焼成することにより、管状焼成体とした。
円板状焼成体の接合面と管状焼成体の接合面を平面研削盤及び高速ラップ盤で加工し、接合面の中心線平均粗さ及び平面度を0.1μmとした。各接合面にイットリウム濃度が2.61×10-4mol/ccの硝酸イットリウム溶液を塗布し、両接合面を重ね合わせて1860℃で1時間熱処理することにより、実験例3のセラミックヒータを得た。熱処理の際には、両焼成体の位置が大幅にずれることがないように、治具によって各焼成体を保持し、固定した。接合時には、両焼成体に対して圧力を加えず、焼成体の自重のみを負荷した。熱処理時の雰囲気は窒素ガスとした。実験例3のセラミックヒータは、強度290MPa、平均粒子径4.9μm、焼成後の反り0.15mmであった。得られたセラミックヒータは、円板状焼成体と管状焼成体との接合界面がSEMで判別できる状態で一体化されていた。
Claims (9)
- 電極を内蔵するセラミック製の円板と前記円板を支持するセラミック製で円筒状のシャフトとを備えた半導体製造装置用部材であって、
前記半導体製造装置用部材は、接合界面を有さないものであり、
前記円板のうち前記シャフトが一体化されている面は、シャフト内側領域とシャフト外側領域とを有し、
前記シャフト内側領域は、前記シャフト外側領域よりも一段凹んだ形状になっており、前記電極を露出させる電極露出穴を有し、
前記シャフトの内部空間のうち、前記円板のシャフト内側領域を基準とする所定高さの位置から前記円板のシャフト内側領域までの第1空間は、前記所定高さの位置から前記円板のシャフト内側領域に向かって拡径する円錐台形状になっており、
前記シャフトの内部空間のうち、前記所定高さの位置から前記シャフトの開口部までの第2空間は、前記所定高さの位置から前記シャフトの開口部に向かって拡径する円錐台形状になっている、
半導体製造装置用部材。 - 前記円板は、前記円板の側面に開口し前記円板の板面方向に沿って設けられたガス通路を有し、前記シャフトは、上下方向に延びて前記ガス通路にガスを供給するガス供給路を有する、
請求項1に記載の半導体製造装置用部材。 - 前記シャフトの外面と前記円板のうち前記シャフトが一体化されている面との境界部は、R面又はテーパ面である、
請求項1又は2に記載の半導体製造装置用部材。 - 電極を内蔵するセラミック製の円板と前記円板を支持するセラミック製で円筒状のシャフトとを備えた半導体製造装置用部材であって、前記半導体製造装置用部材は、接合界面を有さないものであり、前記円板のうち前記シャフトが一体化されている面は、シャフト内側領域とシャフト外側領域とを有し、前記シャフト内側領域は、前記シャフト外側領域よりも一段凹んだ形状になっており、前記電極を露出させる電極露出穴を有する半導体製造装置用部材を、製造するのに用いられる成形型であって、
前記円板のうちシャフト側の円環層を形成するための空間である円環層成形空間と、
前記円環層成形空間に連通し、前記シャフトを形成するための空間であるシャフト成形空間と、
を備えた成形型。 - 前記円環層成形空間は、一対の円環面と該一対の円環面に連なる外周面とで囲まれ、
前記一対の円環面のうち前記シャフト成形空間側の円環面は、前記シャフト成形空間側に窪んだ凹面であり、前記一対の円環面のうち前記シャフト成形空間とは反対側の円環面は、前記シャフト成形空間側に膨らんだ凸面である、
請求項4に記載の成形型。 - 前記凹面及び前記凸面は、中心位置とその中心位置から半径外向きに150mm離れた位置との高低差dが0.7mm以上2.6mm以下である、
請求項5に記載の成形型。 - 前記凹面及び前記凸面の傾斜角度θは、0.25°≦θ≦1°である、
請求項5又は6に記載の成形型。 - (a)請求項4〜7のいずれか1項に記載の成形型を用いて、前記円環層成形空間によって成形される未焼成円環層と前記シャフト成形空間によって成形される未焼成シャフトとがつなぎ目のない状態で一体化された基礎成形体を、モールドキャスト法により作製する工程と、
(b)前記基礎成形体の前記未焼成円環層の上面に、電極又はその前駆体を備えた円板成形体を積層して最終成形体を得る工程と、
(c)前記最終成形体を仮焼したあと、円板側が下になるように水平支持面に載置した状態で焼成することにより、接合界面を有さない半導体製造装置用部材を得る工程と、
を含む半導体製造装置用部材の製法。 - 前記工程(b)では、前記円板成形体として、前記円板成形体の側面に開口するガス通路を備えたものを用いる、
請求項8に記載の半導体製造装置用部材の製法。
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