KR100889840B1 - 외부 콘택용 외부 콘택 패드를 포함하는 반도체 구성요소의 와이어링 기판의 제조 방법 - Google Patents
외부 콘택용 외부 콘택 패드를 포함하는 반도체 구성요소의 와이어링 기판의 제조 방법 Download PDFInfo
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Abstract
Description
Claims (21)
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- 외부 콘택들(4)에 적합한 외부 콘택 패드들(3)을 포함하는 반도체 구성요소(1, 2)의 와이어링 기판(5)을 생성하는 방법에 있어서,- 사전설정된 위치들에 스루 콘택들(16)을 갖는 베이스플레이트(24)를 생성하는 단계를 포함하고, 상기 베이스플레이트(24)는 중합체 플라스틱의 전구체를 포함하며;- 상기 베이스플레이트(24)의 상부면(7)에 고무-탄성 물질(9)로 구성된 층을 선택적으로 적층하는 단계를 포함하고, 상기 고무-탄성 물질(9)로 구성된 층은 서로 이격된 고무-탄성 물질 패드들(25)을 포함하며;- 구리 필름(26)을 증착하고, 상기 베이스플레이트(24)의 상기 중합체 플라스틱의 전구체 안으로 외부 콘택 패드들(3)을 갖는 고무-탄성 물질 패드들(25)을 가압하여, 상기 베이스플레이트(24)의 상부면(7)과 상기 구리 필름(26) 안에 공면 경계층(11)을 형성하는 단계;- 스루 콘택들(16)로의 피드 라인들(14) 및 외부 콘택 패드들(3)을 형성하기 위해 상기 구리 필름(26)을 구조화하는 단계; 및- 상기 베이스플레이트(24)의 중합체 플라스틱을 경화하여, 강성의 자기-지지(self-supporting) 와이어링 기판(5)을 형성하는 단계를 포함하는 것을 특징으로 하는 와이어링 기판(5)을 생성하는 방법.
- 외부 콘택들(4)에 적합한 외부 콘택 패드들(3)을 포함하는 반도체 구성요소(1, 2)의 와이어링 기판(5)을 생성하는 방법에 있어서,- 사전설정된 위치들에 스루 콘택들(16)을 갖는 베이스플레이트(24)를 생성하는 단계를 포함하고, 상기 베이스플레이트(24)는 중합체 플라스틱의 전구체를 포함하며;- 상기 베이스플레이트(24)의 상부면(7)에 고무-탄성 물질(9)로 구성된 층을 선택적으로 적층하는 단계를 포함하고, 상기 고무-탄성 물질(9)로 구성된 층은 서로 이격된 고무-탄성 물질 패드들(25)을 포함하며;- 외부 콘택 패드들(3)로 구조화된 구리-코팅된 필름을 증착하고, 상기 외부 콘택 패드들(3)을 정렬하는 단계를 포함하고, 상기 외부 콘택 패드들(3)의 배치는 상기 고무-탄성 물질 패드들(25)에 대응하며;- 상기 베이스플레이트(24)의 중합체 플라스틱의 전구체 안으로 상기 외부 콘택 패드들(3)을 갖는 고무-탄성 물질 패드들(25)을 가압하여, 상기 베이스플레이트(24)의 상부면(7)과 상기 필름 간에 공면 경계 층(11)을 형성하는 단계;- 상기 외부 콘택 패드들(3)을 덮지 않는 단계; 및- 상기 베이스플레이트(24)의 중합체 플라스틱을 경화하여, 강성의 자기-지지 와이어링 기판(5)을 형성하는 단계를 포함하는 것을 특징으로 하는 와이어링 기판(5)을 생성하는 방법.
- 제 16 항 또는 제 17 항에 있어서,상부 솔더링 레지스트 층(28)이 상기 자기-지지 와이어링 기판(5)의 상부면(7)에 적층되고, 상기 외부 콘택 패드들(3)은 덮이지 않는 것을 특징으로 하는 와이어링 기판(5)을 생성하는 방법.
- 제 16 항 또는 제 17 항에 있어서,솔더 층이 상기 외부 콘택 패드들(3)에 선택적으로 적층되는 것을 특징으로 하는 와이어링 기판(5)을 생성하는 방법.
- 제 16 항 또는 제 17 항에 있어서,상기 자기-지지 와이어링 기판(5)의 하부면(6)은 와이어링 구조체(15)로 코팅되는 것을 특징으로 하는 와이어링 기판(5)을 생성하는 방법.
- 제 20 항에 있어서,상기 자기-지지 와이어링 기판(5)의 하부면(6)은 솔더링 레지스트 층으로 코팅되는 한편, 상기 와이어링 구조체(15)의 콘택 패드(27)에는 상기 솔더링 레지스트 층이 코팅되지 않는 것을 특징으로 하는 와이어링 기판(5)을 생성하는 방법.
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DE102004040414.3 | 2004-08-19 | ||
DE102004040414A DE102004040414B4 (de) | 2004-08-19 | 2004-08-19 | Verfahren zur Herstellung eines Verdrahtungssubstrats eines Halbleiterbauteils mit Außenkontaktanschlussflecken für Außenkontakte |
PCT/DE2005/001278 WO2006017998A2 (de) | 2004-08-19 | 2005-07-20 | Verdrahtungssubstrat eines halbleiterbauteils mit aussenkontaktanschlussflecken für aussenkontakte und verfahren zur herstellung desselben |
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KR20070042580A KR20070042580A (ko) | 2007-04-23 |
KR100889840B1 true KR100889840B1 (ko) | 2009-03-20 |
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KR1020077006299A KR100889840B1 (ko) | 2004-08-19 | 2005-07-20 | 외부 콘택용 외부 콘택 패드를 포함하는 반도체 구성요소의 와이어링 기판의 제조 방법 |
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US (1) | US7638418B2 (ko) |
EP (1) | EP1779428B1 (ko) |
JP (1) | JP5059607B2 (ko) |
KR (1) | KR100889840B1 (ko) |
CN (1) | CN100530625C (ko) |
DE (1) | DE102004040414B4 (ko) |
WO (1) | WO2006017998A2 (ko) |
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US9960130B2 (en) | 2015-02-06 | 2018-05-01 | UTAC Headquarters Pte. Ltd. | Reliable interconnect |
KR20220109753A (ko) | 2021-01-29 | 2022-08-05 | 삼성전자주식회사 | 포스트를 포함하는 반도체 패키지 |
US11929299B2 (en) | 2021-05-06 | 2024-03-12 | Qualcomm Incorporated | High-power die heat sink with vertical heat path |
US11948853B2 (en) | 2021-05-06 | 2024-04-02 | QUALCOMM Technologies Incorporated | High-power die heat sink |
EP4334974A1 (en) * | 2021-05-06 | 2024-03-13 | Qualcomm Technologies, Inc. | High-power die heat sink with vertical heat path |
CN114980492A (zh) * | 2022-06-28 | 2022-08-30 | 昆山国显光电有限公司 | 线路板组件、显示屏及电子设备 |
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Also Published As
Publication number | Publication date |
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DE102004040414A1 (de) | 2006-03-02 |
US7638418B2 (en) | 2009-12-29 |
CN100530625C (zh) | 2009-08-19 |
JP5059607B2 (ja) | 2012-10-24 |
WO2006017998A3 (de) | 2006-08-03 |
JP2008510309A (ja) | 2008-04-03 |
WO2006017998A2 (de) | 2006-02-23 |
EP1779428A2 (de) | 2007-05-02 |
CN101048866A (zh) | 2007-10-03 |
KR20070042580A (ko) | 2007-04-23 |
US20070194459A1 (en) | 2007-08-23 |
EP1779428B1 (de) | 2015-05-27 |
DE102004040414B4 (de) | 2006-08-31 |
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