CN100530625C - 包含外部接触垫片的半导体部件的布线衬底及其制造方法 - Google Patents
包含外部接触垫片的半导体部件的布线衬底及其制造方法 Download PDFInfo
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Abstract
本发明涉及包含用于半导体部件的外部触点的外部接触垫片(3)的半导体部件(3)的布线衬底(5)。出于该目的,刚性布线衬底(5)具有顶侧(7),所述顶侧(7)具有切口(8),其中所述切口(8)具有高弹性材料(9)。外部接触垫片(3)被布置在高弹性材料(9)上。此外,本发明涉及一种用于制造这种类型的布线衬底(5)的方法,其中在制造方法期间高弹性材料垫片(25)被按压进聚合物塑料的前体。
Description
技术领域
本发明涉及包含用于外部触点的外部接触垫片的半导体部件的布线衬底及其制造方法。在这种情形下,焊球优选地被用作外部触点而施加于外部接触垫片。
背景技术
这种类型的布线衬底被用于半导体部件的外壳,所述外壳还被称为BGA外壳(球栅阵列)或称为LBGA外壳(大球栅阵列)。
所述布线衬底的问题之一是由此可以制造布线衬底的外部接触垫片和超级电路板之间连接的可靠性。在循环热负荷事件中,由于具有不同热扩张系数的不同材料的出现导致循环机械切变负荷被施加于焊料连接上。在振动负荷事件中,除了循环热应力的切变负荷外,还出现了压力振动,并且可能整个地导致裂纹或导致连接失败。
许多不同方法被用于现有技术,以便于改进焊球连接至超级电路板的可靠性。某些方法是基于焊料连接配置的以便于减少机械负荷。其他的方法试图改变外壳包装的材料特性,以这样的一种方法使得所述机械负荷被减少,如通过插入半导体芯片粘合层。这些解决方案的某一些具有不利之处,即外壳衬底的改编极大地依赖于外壳的特定实施例。这些解决方案要求额外复杂而昂贵的制造方法。如果过渡到焊接触点之间的更小距离以及更小的连接节距,这些问题同样被加重。
此外,因为各个材料的不同特性,从含铅到无铅焊接材料的过渡将更可能增加而不是减少关于作为外部接触垫片的焊料球负荷限制的问题。解决问题的另外的可能性在于外壳的布线衬底和超级电路板之间以未充满的形式引入额外的材料。然而,这需要电路板制造期间额外的工序并且使得交换或修理电路板上的组件变得更困难。
现有技术中另外的解决方案提供了比如借助于形成弹簧元件的外部触点包含挠性式样的触点本身或者包含具有橡胶弹性核心的弹性球形式的挠性材料。然而,具有挠性触点的这些变形是成本高度集中的并且不适于大规模生产。然而,由于作为外部触点的所述弹簧元件或弹性球的坚固程度较低从而导致可靠性问题出现。
R.Fillian等人在14th European micro electronics and packagingconference and exhibition,Friedrichshafen,Germany,23-25 June 2003,P308-312上的文献“Stress free area array structures for flipchips andchipscale devices”公开了倒装晶片部件、半导体芯片大小外壳和BGA外壳,它们具有如这里图1所示的被布置在充气空穴上方或者被布置在充满弹性材料的空穴上方的焊料球。基于特定的军事应用,这种类型的所谓“浮动垫片”焊料球要求更复杂且成本集中的制造方法并且因此同样不适合于大规模生产。原则上,空穴或弹性体填充的空穴通过将额外的复合层施加于布线衬底来实现。
发明内容
本发明的目的是指定包含用于外部触点的外部接触垫片的半导体部件的布线衬底,并且提供通过能够增加具有作为外部触点的焊料球的部件的可靠性制造用于外部触点的外部接触垫片的半导体部件的布线衬底的方法。此外,本发明的目的是指定适合于便宜的半导体部件的大规模生产的方法。
这个目的通过独立权利要求的主题来达成。本发明的有利设计自从属权利要求中体现。
本发明提供了包含用于安装外部触点的外部接触垫片的半导体部件的布线衬底。出于该目的,刚性布线衬底包含具有布线结构的下侧和具有切口的顶侧。高弹性材料被布置在切口中,其中外部接触垫片被布置在高弹性材料上。
由于无额外的层将要施加于布线衬底的事实,按照本发明的这个布线衬底不同于前面的解决方案,相反布线衬底本身用来提供可填充相应的高弹性材料的切口,在顶侧可设置金属外部接触垫片,对它们来说,由于切口中高弹性材料被压缩并被扩充的事实,允许采用刚性外部触点并且仍然使外部触点能够服从于压力循环负荷和循环热力负荷并且由于切口中高弹性材料允许金属接触垫片的倾斜移动的事实,同样能够对切变负荷作出反应。
在本发明的一个优选实施例中,高弹性材料的顶侧连同布线衬底的顶侧形成了共面面积。所述共面面积具有下列优点,即没有过渡,能够以高精度并且无额外的制造步骤的情况下制造任意的布线结构并且将线路馈送至外部接触垫片、至接触垫片和/或至直通触点。
衬底中的切口可以通过仅仅在为外部触点准备的位置上将高弹性材料垫片按压进衬底的前体来设置。为了在这种情况下产生共面面积,前体的衬底材料仅仅被预先加热以此形成具有高粘性的合成物。因此,切口和其中填充物的形成可以通过简单的打印技术来实现并且不需要复杂的平版印刷涂敷、对准、曝光、显影、固定和安装方法。
在本发明另外的优选实施例中,高弹性材料包含聚硅酮、聚硅酮弹性体、和/或凝胶、和闭孔柔性多孔材料。这些材料一方面具有可以安全地扣牢金属外部接触垫片的优点并且另一方面具有下列优点,即它们具有柔度并且可以因此补偿不准确度以及焊料球直径中的差异。此外,它们可以抵抗相应的热循环测试期间的碰撞、压力循环负荷以及切变负荷。
在这种情况下,假定在弹性材料被按压进衬底材料的高粘性前体的顶侧时形成切口相对来说是不重要的。具有不同深度对单个布线衬底的切口来说甚至是有利的。在压力循环负荷或切变负荷特别高的地方,在被按压进衬底的高粘性材料之前通过制备具有更大体积的高弹性材料垫片能够在衬底上设置更深的切口。
本发明的另外一个特征是填充有高弹性材料的切口的面积范围大于金属外部接触垫片的面积范围。在按照本发明的这种测量的情况下,高弹性材料的作用被进一步增加,因为金属接触垫片边缘和切口边缘之间的柔度同样被保证。
在本发明的又一优选实施例中,布线衬底具有从布线结构至外部接触垫片的馈线。在与外部接触垫片的面积范围比较时,可将所述馈线作得更细,结果是在没有撕裂和折断的情况下,它们可以遵循切口中高弹性材料的柔度。
此外,布线衬底可具有穿过布线衬底的直通垫片,所述直通垫片被连接至馈线并且因此使得能够对外部接触垫片进行电存取。因为通道线路的弹性不大以使它们可以遵循高弹性变形,这些相对刚性的直通触点被布置在高弹性材料垫片的附近。所述直通垫片接着经由馈线被连接到外部接触垫片。
用于加宽外部接触垫片下高弹性材料的能力的另一种可能性涉及容纳高弹性材料中的导电粒子。所述导电粒子必须首先具有较高的可变形性,必须另外具有较高的柔度,并且最终它们必须适应预计的外部接触垫片的较大移动。所谓“纳米碳管”适合于这种进行接触的任务,而不会削弱外部接触垫片下材料的高弹性特性。
这种纳米碳管是具有碳原子的单壁或多壁六角形布置的空心管并且具有介于几纳米和几百纳米之间的直径。因为纳米碳管不具有超过其十纳米至几百毫米的长度的颗粒边界,它们的可变形性和弹性以及柔度明显大于被结合进通常导电塑料连接的金属颗粒情况下的这些特性。具有值为1×109A/cm2的纳米碳管的载流能力也是明显更强。此外,由于缺少颗粒边界,抗拉强度极其高并且其值介于5×1010pa至5×1013Pa,比通常金属粒子的情况下高出两个或多个数量级,结果是如果这种纳米碳管混合有高弹性材料的话,接触能力的中断极其低。
本发明的另一个实施例提供了具有无铅焊接材料的焊料涂层的外部接触垫片。所述无铅焊接材料首先改进了环境兼容性并促进了这种布线衬底的循环,而且具有由焊料球组成的外部触点可以极其简单的方式连接到外部接触垫片的优点。
在本发明的另一个实施例中,半导体芯片被布置在布线衬底的布线结构上,其中半导体芯片可以通过其倒装晶片触点直接连接到布线结构的接触垫片。在具有位于活性顶侧上的接触面积的半导体芯片的情况下,具有布线结构的所述接触面积经由相应的粘合连接被电连接至布线衬底的布线结构。对于操作方法以及超级电路板和半导体部件的外部触点之间的相互作用来说,半导体芯片是否装配有倒装晶片触点或粘合连接不是至关重要的。
最关键的是携带外部接触面积的衬底经由塑料外壳合成物通过机械方式被紧密连接到半导体芯片,以使半导体材料和通常包含加固纤维的环氧树脂的超级电路板之间的膨胀差异还影响半导体部件的布线衬底和超级电路板之间的焊料连接。外部接触垫片的依照本发明的高弹性柔度可在一定程度上减轻半导体部件和超级电路板之间的机械应力,以使不恰当接触或外部触点扯开的风险被避免。
用于产生包含用于安装外部触点的外部接触垫片的半导体部件的布线衬底方法具有下列方法步骤。第一步涉及在预定位置上制造具有直通触点的基板,其中基板包含聚合物塑料的前体。然后,由高弹性材料组成的层被选择性地施于基板的顶侧,其中层包含彼此间隔的高弹性材料垫片。铜膜接着借助于基板的聚合物塑料的前体上的外部接触垫片随高弹性材料垫片的按压而被层压。在这种层压期间,共面界面在铜膜和基板顶侧之间形成。此后,铜膜可被构造以此形成外部接触垫片并馈送至直通触点。这个构造通过平版印刷术和蚀刻技术来实现。基板的聚合物塑料接着随刚性自支持布线衬底的形成而被固化。
该方法具有高弹性材料垫片可以通过相对粗略的施加技术来实现的好处,如打印技术。这样的打印技术被称为激光打印技术、屏幕打印技术或膜板打印技术并且在基板上产生高弹性材料垫片的图案。在将所述高弹性材料垫片按压进基板的高粘性塑料合成物的过程中,通过相应的层压工具支持铜膜。塑料膜的厚度可因此对应于外部接触垫片的厚度。
外部接触垫片或高弹性材料按压进衬底之后,铜膜可实际地被构造成馈线和外部接触垫片。在这种构造之前,否则在这种构造之后,基板的聚合物塑料随刚性自支持布线衬底的形成而被固化。在这种固化期间,聚合物交联的链型分子形成的空间图案在机械上是相当稳定的。
在制造包含用于安装外部触点的外部接触垫片的半导体部件的布线衬底的备选方法中,第一步同样涉及在预定位置上为基板提供直通触点。在这种情况下,基板代表聚合物塑料的前体。这样的前体是尚未完全交联并且在相对较低的温度下具有使聚合物塑料的刚性前体经历过渡到具有较高粘性的合成物的软化点的聚合物塑料。所述前体在室温下为固体,其结果是由高弹性材料组成的层可以选择性地施于基板、施于基板的顶侧。在这种情况下,层具有彼此间隔并且被布置在基板的预定位置上的高弹性材料垫片。
作为上述方法的备选,不是金属膜被层压,而是涂有铜的薄膜接着被制备,其中的金属涂层已经被构造并且具有金属外部接触垫片。薄膜上外部接触垫片的布置与基板上高弹性材料垫片的布置相对应,据此所构造的涂有金属的膜接着被对准。在这种情况下,对于薄膜材料本身来说,具有透明塑料是有利的,从而便于对准。此后,在层压期间,基板顶侧上的高弹性材料垫片和外部接触垫片被按压进基板的聚合物塑料的前体。出于这个目的,基板被加热至聚合物塑料的前体的软化点。在过程中,共面边界层出现在薄膜和基层顶侧之间。
该步骤之后,外部接触垫片被揭开。一方面,这可以通过借助于在外部接触垫片位置处经光刻步骤溶解的承载膜而被揭开的涂有铜的薄膜的相应区域来实现,或者通过从共面边界层剥去承载膜来实现。最后,基板的聚合物塑料可以随刚性自支持布线衬底的形成而被固化。在这种固化期间,聚合物塑料的前体在很大程度上被交联并且因此获得更大的尺寸稳定性。
在该方法的另一个变形中,高弹性材料垫片未在基板上制备,而是相反被施于结构化的涂有金属并可能是透明的塑料承载膜的相应制备金属外部接触垫片上。已经具有外部接触垫片和高弹性材料垫片的这种合成薄膜可接着被层压到表面上,其中高弹性材料垫片被渗入基板的聚合物塑料前体。在基板固化之后,透明塑料承载膜可随后从在薄膜和基板顶侧之间形成的共面边界层中被剥去。
在所有三种方法变形中,自支持布线衬底最终出现,布线结构可施于其下侧,布线衬底被连接至直通触点并且使得能够粘合至将要被施于的半导体芯片。此外,焊接抗蚀层可以同时施加于顶侧和自支持布线衬底的下侧以便于仅留下外部接触垫片在顶侧以及相应的接触垫片用于连接到将要施于的半导体芯片。取决于半导体芯片是否通过布线结构上它的倒装晶片接触而将要被直接连接或者半导体芯片是否将经由粘合连接而将要被连接到布线衬底和位于其上的布线结构,这些接触垫片被有差别地布置在布线衬底上。
在用于将高弹性材料按压进基板材料的所有三种方法中,填充了高弹性材料的切口的图案在布线衬底中产生,结果未增加布线衬底的厚度并且无论如何不需要额外的涂层用于在外部接触垫片下产生高弹性区域。
利用这种方法,不需要任何额外的增加衬底厚度的高弹性结构的布线衬底可以通过节省成本的方法步骤来产生,并且半导体部件和超级电路板之间的机械去解耦仍然是可能的。因为高弹性材料垫片的尺寸可以自由选择,还能够获得布线衬底上填充有高弹性材料的切口的不同深度。
总的说来,可以建成半导体部件的按照本发明的布线衬底,在半导体部件外壳和超级印刷电路板或电路板之间起作用的力可以被更好地采用,因为在每一种情形下,高弹性层被结合进外壳处外部接触垫片下的布线衬底。因为所述层被嵌入基本主体或布线衬底的基板中并且在衬底制造期间被设置在如前面的相应位置处,这样的高弹性图案的制造被简化并且因此变得更节省成本。
当外力在焊料触点上起作用时,外部接触垫片下的高弹性层允许优选地在z方向上的有限偏移,并且因此允许振动负荷事件中的应力吸收或衰减。高弹性层的厚度可以根据需要的应力来改变,因此以便于取得连接的牢固度和挠性之间的最佳平衡。在部件内,能够改变厚度以便于减轻相对较高压力触点(例如布线衬底角落上的外部触点)上的负荷。
因此,总的来说,提供了下列优点:
1.更高的连接可靠性,尤其是在带来Z方向拉伸负荷的抛掷测试中,而且在印刷电路板层次上的温度循环测试中。
2.由于以高弹性方式安装的外部接触垫片,测试期间的接触连接被改进。
3.对于最终消费者来说,半导体部件外壳和超级电路板之间空隙的未填充被避免,以使半导体部件可以通过其外部触点以更简单的方式被安装到超级电路板。
4.用于这样的高弹性加垫的外部接触垫片的制造过程可以节省成本的方式来实施。
因此,在布线衬底中或者在外部接触垫片或球垫片内的衬底插入式选样中产生应力吸收层并且因此取得外壳和超级电路板的部分机械解耦。
附图说明
图1示出的是穿过布线衬底的一部分的截面示意图;
图2示出的是穿过聚合物塑料的前体的基板的截面示意图;
图3示出的是在施用高弹性材料垫片之后的穿过依照图1的基板的截面示意图;
图4示出的是在施用金属膜之后的穿过依照图2的基板的截面示意图;
图5示出的是在将高弹性材料垫片按压进基板之后的穿过依照图4的基板的截面示意图;
图6示出的是在构造金属膜以此形成切口垫片和馈线之后的穿过基板的截面示意图;
图7示出的是穿过按照本发明的布线衬底的截面示意图;
图8示出的是穿过安装在超级电路板上的本发明第一实施例的半导体部件的一部分的截面示意图;
图9示出的是穿过安装在超级电路板上的本发明第二实施例的半导体部件的一部分的截面示意图。
具体实施方式
图1示出的是穿过布线衬底5的一部分的截面示意图。布线衬底5具有基板24,所述基板24具有顶侧7和下侧6。高弹性材料9从顶侧7被引入基板24,该材料形成了高弹性材料垫片25并且填充布线衬底5的顶侧7上的切口8。
结合进基板24的高弹性材料垫片25具有利用布线衬底5的顶侧7形成共面面积11的顶侧10。金属外部接触垫片3被布置在高弹性材料垫片25的区域中布线衬底5的共面面积11上。外部接触垫片3的面积范围13小于高弹性材料垫片25的面积范围12。
因为高弹性材料垫片25是柔顺的,由于在外部接触垫片3上起作用的热应力或振动负荷,切变负荷可以被减少或衰减。出于这个目的,半导体部件的布线衬底5的切口8的深度t可适应预计的负荷,其结果是,比如在半导体部件的中心利用比外部触点4更厚的高弹性层角落来缓冲接触。
馈线(在该截面图中不可见)将外部接触垫片3和因此安装到后者上的外部触点4连接至被布置在布线衬底5的下侧6上的布线结构15。布线衬底5的顶侧7利用上部焊接抗蚀层28来覆盖,以这样的一种方式使其留下携带外部触点4的外部接触垫片3。在下侧6上,布线结构15免于更低的焊接抗蚀层29的损害。具有以高弹性式样安装的外部触点4的这种布线衬底5的好处已经在上面进行了讨论并且因此在这个结合点处被省略。
图2至7示出的是用于半导体部件的布线衬底制造期间穿过单独部件的截面示意图。在图1至7中,具有与图1相同功能的部件使用相同的附图标记并且不再单独讨论。这样的布线衬底的制造可以独立于半导体芯片制造由以前已经供应金属引线框的供应商公司来承担。
图2示出的是穿过由聚合物塑料的前体组成的基板24的截面示意图。基板24具有顶侧7和下侧6。从顶侧7到下侧6,直通触点16被布置在基板24中的直视位置上。所述直通触点16用来连接将要在基板24的顶侧7上制造的外部接触垫片至将要在基板24的下侧6上制造的布线结构。
图3示出的是施用高弹性材料垫片25之后的穿过依照图1的基板24的截面示意图。所述高弹性材料垫片25可具有不同厚度,以便于因此在基板24中产生不同深度的切口,所述切口填充有高弹性材料9。
图4示出的是施用金属膜26之后的穿过依照图2的基板24的截面示意图。所述金属膜26被施加以便于随后被层压在基板24的表面7上。在层压操作期间,由聚合物塑料的前体组成的基板24被加热以此形成具有高粘性的合成物并且金属膜26随着高弹性金属垫片25按压进基板24而被层压。在该过程中还设置了直通触点16和金属膜26之间的连接。
图5示出的是在将高弹性材料垫片25按压进基板24、产生包含高弹性材料垫片25的顶侧10和基板24的顶侧7的共面表面11之后穿过依照图4的基板24的截面示意图。当高弹性材料垫片25被按压进基板24的聚合物塑料的高粘性前体时,高弹性金属垫片25渗入基板24远至深度t。即使对于所示出的三个高弹性金属垫片25来说,深度t在这个实例中是相同的,然而如上所述,其还可能是不同的并且取决于将要被安装的外部接触垫片3的预计负荷。
图6示出的是在构造图5的金属膜26以此形成外部接触垫片3和馈线14之后的穿过基板24的截面示意图。馈线14是狭窄的导体轨道,其连接外部接触垫片3至相应的直通触点16,其被定位以使它们不会反过来影响高弹性金属垫片25。为了取得高弹性材料25的高变形性,后者由绝缘聚硅酮、聚硅酮弹性体、凝胶或柔性多孔绝缘材料制成并且不适于电流的传导。在图6所示的高弹性材料垫片25的变形中,所述垫片可以填充在文字上被称为纳米碳管的相应柔顺的导电粒子,其结果是直通触点16还可被设置其下,即在基板24中的高弹性金属垫片25的区域上。
图7示出的是穿过依照本发明的一个实施例的布线衬底5的截面示意图。如图6所示的布线衬底5的前体通过将上部焊接抗蚀层28施用于布线板的顶侧7同时留下外部接触垫片3来完成。另外,布线结构15被施于下侧6并且对于其部分来说,布线结构15可以免于更低的焊接抗蚀层29的损害。更低的布线结构15用来经由直通触点16电连接布线衬底的顶侧7上的外部接触垫片3至布线衬底5的下侧6上的半导体芯片。
图8示出的是穿过本发明第一实施例的半导体部件1的一部分的截面示意图,所述半导体部件1被安装在超级电路板30上。具有与前面附图中相同功能的部件用相同的附图标记表示并且不再单独进行讨论。具有其高弹性加垫的外部接触垫片3的布线衬底5包含外部触点4。所述外部触点4经由外部接触垫片3被连接至馈线14,并且还被连接至布线衬底5的下侧6上布线结构15的直通触点16。布线结构15具有接触垫片27,其被连接到本发明第一实施例的这个半导体部件1中半导体芯片17的倒装晶片触点21。
对于其部分来说,外部触点4被连接至超级电路板30的顶侧33上导体轨道结构32的焊料垫片31。借助于埋入半导体部件1的布线衬底5的高弹性材料垫片25,作为热应力的结果以振动和切变负荷形式的压力循环负荷可以被高弹性加垫并被吸收,其结果是经由这样的高弹性加垫的外部触点4,半导体部件1和超级电路板30之间的这个连接具有更高的可靠性。
图9示出的是穿过本发明的第二实施例的半导体部件2的一部分的截面示意图,所述半导体部件2被安装在超级电路板30上。具有与图8中相同功能的部件用相同的附图标记表示并且不再单独进行讨论。
根据半导体芯片18的活性顶侧22具有经由粘合连接19被连接至布线衬底5的下侧6上布线结构15的接触垫片27的接触面积23的事实,按照本发明的半导体部件2的这个第二实施例不同于图8所示的半导体部件。此外,半导体芯片18的后侧34借助于粘合层35被机械连接到布线衬底5。具有粘合连接19的半导体芯片18以及布线衬底5的下侧上的结构被塑料外壳合成物20包围,所述塑料外壳合成物20保护半导体部件2的整个构造免于损害。
Claims (10)
1.一种制造半导体部件(1,2)的布线衬底(5)的方法,所述半导体部件(1,2)包含用于安装外部触点(4)的外部接触垫片(3),其中所述方法包含下列方法步骤:
-在预定位置制造具有直通触点(16)的基板(24),其中所述基板(24)包含聚合物塑料的前体,
-选择性地将由橡胶弹性材料(9)组成的层施于所述基板(24)的顶侧(7),其中所述层包含彼此间隔的橡胶弹性材料垫片(25),
-随着将具有所述外部接触垫片(3)的所述橡胶弹性材料垫片(25)按压进所述基板(24)的聚合物塑料的前体而层压铜膜(26),并且在铜膜(26)和所述基板(24)的顶侧(7)之间形成共面边界层(11),
-构造所述铜膜(26)以此形成外部接触垫片(3)和到达所述直通触点(16)的馈线(14),
-随着刚性自支持布线衬底(5)的形成而固化所述基板(24)的聚合物塑料。
2.如权利要求1所述的方法,其特征在于:
利用被揭开的所述外部接触垫片(3)使上部焊接抗蚀层(28)施于所述自支持布线衬底(5)的顶侧(7)。
3.如权利要求1所述的方法,其特征在于:
焊料层被选择性地施于所述外部接触垫片(3)。
4.如权利要求1所述的方法,其特征在于:
所述自支持布线衬底(5)的下侧(6)被涂以布线结构(15)。
5.如权利要求1所述的方法,其特征在于:
所述自支持布线衬底(5)的下侧(6)被涂以焊接抗蚀层,同时留下所述布线结构(15)的接触触点(27)。
6.一种用于生产半导体部件(1,2)的布线衬底(5)的方法,所述半导体部件(1,2)包含用于安装外部触点(4)的外部接触垫片(3),其中所述方法包含下列方法步骤:
-在预定位置制造具有直通触点(16)的基板(24),其中所述基板(24)包含聚合物塑料的前体,
-选择性地将由橡胶弹性材料(9)组成的层施于所述基板(24)的顶侧(7),其中所述层包含彼此间隔的橡胶弹性材料垫片(25),
-在与外部接触垫片(3)对准的情况下,对构造成具有所述外部接触垫片(3)的涂有铜的薄膜进行层压,其中所述外部接触垫片(3)的布置对应于所述橡胶弹性材料垫片(25),
-随薄膜和所述基板(24)的顶侧(7)之间的共面边界层(11)的形成,将具有所述外部接触垫片(3)的所述橡胶弹性材料垫片(25)按压进所述基板(24)的聚合物塑料的前体,
-揭开所述外部接触垫片(3),
-随刚性自支持布线衬底(5)的形成而固化所述基板(24)的聚合物塑料。
7.如权利要求6所述的方法,其特征在于:
利用被揭开的所述外部接触垫片(3)使上部焊接抗蚀层(28)施于所述自支持布线衬底(5)的顶侧(7)。
8.如权利要求6所述的方法,其特征在于:
焊料层被选择性地施于所述外部接触垫片(3)。
9.如权利要求6所述的方法,其特征在于:
所述自支持布线衬底(5)的下侧(6)被涂以布线结构(15)。
10.如权利要求6所述的方法,其特征在于:
所述自支持布线衬底(5)的下侧(6)被涂以焊接抗蚀层,同时留下所述布线结构(15)的接触触点(27)。
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DE102004040414.3 | 2004-08-19 | ||
PCT/DE2005/001278 WO2006017998A2 (de) | 2004-08-19 | 2005-07-20 | Verdrahtungssubstrat eines halbleiterbauteils mit aussenkontaktanschlussflecken für aussenkontakte und verfahren zur herstellung desselben |
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KR20220109753A (ko) | 2021-01-29 | 2022-08-05 | 삼성전자주식회사 | 포스트를 포함하는 반도체 패키지 |
EP4334974A1 (en) * | 2021-05-06 | 2024-03-13 | Qualcomm Technologies, Inc. | High-power die heat sink with vertical heat path |
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WO2006017998A3 (de) | 2006-08-03 |
JP5059607B2 (ja) | 2012-10-24 |
US20070194459A1 (en) | 2007-08-23 |
KR100889840B1 (ko) | 2009-03-20 |
CN101048866A (zh) | 2007-10-03 |
EP1779428B1 (de) | 2015-05-27 |
JP2008510309A (ja) | 2008-04-03 |
KR20070042580A (ko) | 2007-04-23 |
DE102004040414A1 (de) | 2006-03-02 |
WO2006017998A2 (de) | 2006-02-23 |
DE102004040414B4 (de) | 2006-08-31 |
US7638418B2 (en) | 2009-12-29 |
EP1779428A2 (de) | 2007-05-02 |
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