KR100886620B1 - 복합물 웨이퍼 제조방법 및 사용한 도우너 기판의리싸이클링 방법 - Google Patents

복합물 웨이퍼 제조방법 및 사용한 도우너 기판의리싸이클링 방법 Download PDF

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KR100886620B1
KR100886620B1 KR1020070000569A KR20070000569A KR100886620B1 KR 100886620 B1 KR100886620 B1 KR 100886620B1 KR 1020070000569 A KR1020070000569 A KR 1020070000569A KR 20070000569 A KR20070000569 A KR 20070000569A KR 100886620 B1 KR100886620 B1 KR 100886620B1
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donor substrate
initial donor
rapid thermal
heat treatment
rapid
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KR20070093798A (ko
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빠트리크 레이노
에릭끄 네이레
다니엘르 델프라
올레그 꼬농쉬끄
미카엘 스텡꼬
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에스오아이테크 실리콘 온 인슐레이터 테크놀로지스
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02032—Preparing bulk and homogeneous wafers by reclaiming or re-processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Recrystallisation Techniques (AREA)
  • Formation Of Insulating Films (AREA)
  • Separation, Recovery Or Treatment Of Waste Materials Containing Plastics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020070000569A 2006-03-14 2007-01-03 복합물 웨이퍼 제조방법 및 사용한 도우너 기판의리싸이클링 방법 Active KR100886620B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP06290421.4A EP1835533B1 (en) 2006-03-14 2006-03-14 Method for manufacturing compound material wafers and method for recycling a used donor substrate
EPEP06290421 2006-03-14

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KR20070093798A KR20070093798A (ko) 2007-09-19
KR100886620B1 true KR100886620B1 (ko) 2009-03-05

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Country Link
US (1) US7405136B2 (enExample)
EP (1) EP1835533B1 (enExample)
JP (1) JP4928932B2 (enExample)
KR (1) KR100886620B1 (enExample)
CN (1) CN100541759C (enExample)
SG (1) SG136030A1 (enExample)
TW (1) TWI334165B (enExample)

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JP5289805B2 (ja) * 2007-05-10 2013-09-11 株式会社半導体エネルギー研究所 半導体装置製造用基板の作製方法
US7781308B2 (en) * 2007-12-03 2010-08-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
CN101504930B (zh) 2008-02-06 2013-10-16 株式会社半导体能源研究所 Soi衬底的制造方法
DE102008027521B4 (de) 2008-06-10 2017-07-27 Infineon Technologies Austria Ag Verfahren zum Herstellen einer Halbleiterschicht
US8871610B2 (en) * 2008-10-02 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
JP5410769B2 (ja) * 2009-01-30 2014-02-05 グローバルウェーハズ・ジャパン株式会社 シリコンウェーハの熱処理方法
US8198172B2 (en) 2009-02-25 2012-06-12 Micron Technology, Inc. Methods of forming integrated circuits using donor and acceptor substrates
JP5607399B2 (ja) * 2009-03-24 2014-10-15 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法
SG166060A1 (en) * 2009-04-22 2010-11-29 Semiconductor Energy Lab Method of manufacturing soi substrate
US8318588B2 (en) * 2009-08-25 2012-11-27 Semiconductor Energy Laboratory Co., Ltd. Method for reprocessing semiconductor substrate, method for manufacturing reprocessed semiconductor substrate, and method for manufacturing SOI substrate
KR101731809B1 (ko) * 2009-10-09 2017-05-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기판의 재생 방법, 재생된 반도체 기판의 제조 방법, 및 ｓｏｉ 기판의 제조 방법
SG173283A1 (en) * 2010-01-26 2011-08-29 Semiconductor Energy Lab Method for manufacturing soi substrate
EP2614518A4 (en) * 2010-09-10 2016-02-10 VerLASE TECHNOLOGIES LLC METHOD FOR PRODUCING OPTOELECTRONIC DEVICES WITH LAYERS DISSOLVED BY SEMICONDUCTOR DONATORS AND DEVICES MADE IN THIS METHOD
US9123529B2 (en) 2011-06-21 2015-09-01 Semiconductor Energy Laboratory Co., Ltd. Method for reprocessing semiconductor substrate, method for manufacturing reprocessed semiconductor substrate, and method for manufacturing SOI substrate
FR2987166B1 (fr) * 2012-02-16 2017-05-12 Soitec Silicon On Insulator Procede de transfert d'une couche
FR2987682B1 (fr) 2012-03-05 2014-11-21 Soitec Silicon On Insulator Procede de test d'une structure semi-conducteur sur isolant et application dudit test pour la fabrication d'une telle structure
US8747598B2 (en) * 2012-04-25 2014-06-10 Gtat Corporation Method of forming a permanently supported lamina
FR2999801B1 (fr) 2012-12-14 2014-12-26 Soitec Silicon On Insulator Procede de fabrication d'une structure
US9082692B2 (en) 2013-01-02 2015-07-14 Micron Technology, Inc. Engineered substrate assemblies with epitaxial templates and related systems, methods, and devices
TW201444118A (zh) * 2013-05-03 2014-11-16 Univ Dayeh 具有氮化鎵磊晶層的藍寶石基板的回收方法
JP6100200B2 (ja) * 2014-04-24 2017-03-22 信越半導体株式会社 貼り合わせｓｏｉウェーハの製造方法
FR3051968B1 (fr) 2016-05-25 2018-06-01 Soitec Procede de fabrication d'un substrat semi-conducteur a haute resistivite
FI128442B (en) * 2017-06-21 2020-05-15 Turun Yliopisto Silicon-on-insulator construction with crystalline silica
FR3076069B1 (fr) * 2017-12-22 2021-11-26 Commissariat Energie Atomique Procede de transfert d'une couche utile
FR3076070B1 (fr) * 2017-12-22 2019-12-27 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de transfert d'une couche utile
DE102018122979B4 (de) * 2018-06-13 2023-11-02 Infineon Technologies Ag Verfahren zum bilden einer silicium-isolator-schicht und halbleitervorrichtung mit derselben
CN110223995B (zh) * 2019-06-14 2021-11-02 芯盟科技有限公司 一种图像传感器的形成方法、图像传感器及电子设备
JPWO2024201649A1 (enExample) * 2023-03-27 2024-10-03

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KR20010101763A (ko) * 1999-11-29 2001-11-14 와다 다다시 박리 웨이퍼의 재생처리방법 및 재생처리된 박리 웨이퍼
KR20010109790A (ko) * 2000-06-02 2001-12-12 이 창 세 에스오아이 웨이퍼 제조 방법
KR20050013398A (ko) * 2003-07-28 2005-02-04 주식회사 실트론 실리콘 단결정 웨이퍼 및 ｓｏｉ 웨이퍼의 제조방법

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JP3932369B2 (ja) 1998-04-09 2007-06-20 信越半導体株式会社 剥離ウエーハを再利用する方法および再利用に供されるシリコンウエーハ
JPH11307747A (ja) 1998-04-17 1999-11-05 Nec Corp Ｓｏｉ基板およびその製造方法
JP3500063B2 (ja) 1998-04-23 2004-02-23 信越半導体株式会社 剥離ウエーハを再利用する方法および再利用に供されるシリコンウエーハ
JP3697106B2 (ja) * 1998-05-15 2005-09-21 キヤノン株式会社 半導体基板の作製方法及び半導体薄膜の作製方法
US6436846B1 (en) * 1998-09-03 2002-08-20 Siemens Aktiengesellscharft Combined preanneal/oxidation step using rapid thermal processing
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JP2001144275A (ja) * 1999-08-27 2001-05-25 Shin Etsu Handotai Co Ltd 貼り合わせｓｏｉウエーハの製造方法および貼り合わせｓｏｉウエーハ
FR2838865B1 (fr) * 2002-04-23 2005-10-14 Soitec Silicon On Insulator Procede de fabrication d'un substrat avec couche utile sur support de resistivite elevee
US7074623B2 (en) 2002-06-07 2006-07-11 Amberwave Systems Corporation Methods of forming strained-semiconductor-on-insulator finFET device structures
JP2004193515A (ja) * 2002-12-13 2004-07-08 Shin Etsu Handotai Co Ltd Ｓｏｉウエーハの製造方法
US20040187769A1 (en) * 2003-03-27 2004-09-30 Yoshirou Aoki Method of producing SOI wafer
JP4869544B2 (ja) * 2003-04-14 2012-02-08 株式会社Ｓｕｍｃｏ Ｓｏｉ基板の製造方法
FR2857982B1 (fr) 2003-07-24 2007-05-18 Soitec Silicon On Insulator Procede de fabrication d'une couche epitaxiee
DE10336271B4 (de) * 2003-08-07 2008-02-07 Siltronic Ag Siliciumscheibe und Verfahren zu deren Herstellung
FR2867310B1 (fr) 2004-03-05 2006-05-26 Soitec Silicon On Insulator Technique d'amelioration de la qualite d'une couche mince prelevee
FR2867607B1 (fr) * 2004-03-10 2006-07-14 Soitec Silicon On Insulator Procede de fabrication d'un substrat pour la microelectronique, l'opto-electronique et l'optique avec limitaton des lignes de glissement et substrat correspondant
JP4715470B2 (ja) * 2005-11-28 2011-07-06 株式会社Sumco 剥離ウェーハの再生加工方法及びこの方法により再生加工された剥離ウェーハ

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Publication number Priority date Publication date Assignee Title
KR20010101763A (ko) * 1999-11-29 2001-11-14 와다 다다시 박리 웨이퍼의 재생처리방법 및 재생처리된 박리 웨이퍼
KR20010109790A (ko) * 2000-06-02 2001-12-12 이 창 세 에스오아이 웨이퍼 제조 방법
KR20050013398A (ko) * 2003-07-28 2005-02-04 주식회사 실트론 실리콘 단결정 웨이퍼 및 ｓｏｉ 웨이퍼의 제조방법

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TW200741821A (en) 2007-11-01
JP2007251129A (ja) 2007-09-27
EP1835533A1 (en) 2007-09-19
TWI334165B (en) 2010-12-01
CN101038890A (zh) 2007-09-19
US7405136B2 (en) 2008-07-29
SG136030A1 (en) 2007-10-29
EP1835533B1 (en) 2020-06-03
CN100541759C (zh) 2009-09-16
JP4928932B2 (ja) 2012-05-09
KR20070093798A (ko) 2007-09-19
US20070216042A1 (en) 2007-09-20

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