KR100855083B1 - 타겟 기판에 결합된 박막을 구비하는 적층 구조의 제조 방법 - Google Patents

타겟 기판에 결합된 박막을 구비하는 적층 구조의 제조 방법 Download PDF

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KR100855083B1
KR100855083B1 KR1020037006179A KR20037006179A KR100855083B1 KR 100855083 B1 KR100855083 B1 KR 100855083B1 KR 1020037006179 A KR1020037006179 A KR 1020037006179A KR 20037006179 A KR20037006179 A KR 20037006179A KR 100855083 B1 KR100855083 B1 KR 100855083B1
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substrate
contact
thin layer
contact surface
layer
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Korean (ko)
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KR20030051782A (ko
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모리소위베르
아스파베르나르
잘라기에에릭
르떼르트르파브리스
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꼼미사리아 아 레네르지 아토미끄
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76256—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques using silicon etch back techniques, e.g. BESOI, ELTRAN

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Element Separation (AREA)
KR1020037006179A 2000-11-06 2001-11-05 타겟 기판에 결합된 박막을 구비하는 적층 구조의 제조 방법 Expired - Lifetime KR100855083B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR00/14170 2000-11-06
FR0014170A FR2816445B1 (fr) 2000-11-06 2000-11-06 Procede de fabrication d'une structure empilee comprenant une couche mince adherant a un substrat cible
PCT/FR2001/003401 WO2002037556A1 (fr) 2000-11-06 2001-11-05 Procede de fabrication d'une structure empilee comprenant une couche mince adherant a un substrat cible

Publications (2)

Publication Number Publication Date
KR20030051782A KR20030051782A (ko) 2003-06-25
KR100855083B1 true KR100855083B1 (ko) 2008-08-29

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KR1020037006179A Expired - Lifetime KR100855083B1 (ko) 2000-11-06 2001-11-05 타겟 기판에 결합된 박막을 구비하는 적층 구조의 제조 방법

Country Status (9)

Country Link
US (3) US6974759B2 (enExample)
EP (1) EP1344249B1 (enExample)
JP (3) JP2004513517A (enExample)
KR (1) KR100855083B1 (enExample)
CN (1) CN1327505C (enExample)
AU (1) AU2002223735A1 (enExample)
FR (1) FR2816445B1 (enExample)
TW (1) TW513752B (enExample)
WO (1) WO2002037556A1 (enExample)

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US8481409B2 (en) 2013-07-09
FR2816445A1 (fr) 2002-05-10
FR2816445B1 (fr) 2003-07-25
EP1344249A1 (fr) 2003-09-17
US20060079071A1 (en) 2006-04-13
EP1344249B1 (fr) 2017-01-18
CN1327505C (zh) 2007-07-18
JP5770767B2 (ja) 2015-08-26
JP2013138248A (ja) 2013-07-11
JP2004513517A (ja) 2004-04-30
US20040014299A1 (en) 2004-01-22
WO2002037556A1 (fr) 2002-05-10
US6974759B2 (en) 2005-12-13
CN1473361A (zh) 2004-02-04
JP2009081478A (ja) 2009-04-16
US20130230967A1 (en) 2013-09-05
AU2002223735A1 (en) 2002-05-15
US8679946B2 (en) 2014-03-25
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JP5528711B2 (ja) 2014-06-25

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