JP5353897B2 - 圧電性複合基板の製造方法、および圧電素子の製造方法 - Google Patents
圧電性複合基板の製造方法、および圧電素子の製造方法 Download PDFInfo
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- JP5353897B2 JP5353897B2 JP2010542105A JP2010542105A JP5353897B2 JP 5353897 B2 JP5353897 B2 JP 5353897B2 JP 2010542105 A JP2010542105 A JP 2010542105A JP 2010542105 A JP2010542105 A JP 2010542105A JP 5353897 B2 JP5353897 B2 JP 5353897B2
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- single crystal
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/06—Joining of crystals
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/04—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning
- H10N30/045—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning by polarising
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49005—Acoustic transducer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49126—Assembling bases
Description
以下、本発明の第1の実施形態に係る圧電性複合基板の製造方法を、表面弾性波共振子の製造方法に採用した工程例を説明する。
次に、本発明の第2の実施形態に係る圧電性複合基板の製造方法を、表面弾性波振動子の製造方法に採用した工程例を説明する。
3,13…剥離層
5,15…圧電性複合基板
6…IDT電極
15A…振動空間
15B…孔
16…中間層電極パターン
17…Si基板
18…犠牲層
19…複合基板
Claims (6)
- 圧電効果が利用される第1の圧電単結晶体と、前記第1の圧電単結晶体に接合される第2の圧電単結晶体と、を備える圧電性複合基板の製造方法であって、
前記第1の圧電単結晶体の略均一な極性を有する第1の極性面にイオンを注入することにより、前記第1の極性面から内部に離れた剥離層にマイクロキャビティを集積して形成するイオン注入工程と、
前記イオン注入工程の後、前記第2の圧電単結晶体の、前記第1の極性面とは逆極性で略均一な極性を有する第2の極性面に、分極軸が前記第1の圧電単結晶体と前記第2の圧電単結晶体とで同方向になるようにして、前記第1の圧電単結晶体の前記第1の極性面を接合する接合工程と、
前記接合工程の後、前記マイクロキャビティに熱応力を作用させるにより前記剥離層を分断する剥離工程と、を含む、圧電性複合基板の製造方法。 - 前記接合工程の後、前記圧電性複合基板に対して電界を印加して、前記第1の極性面の一部の反転した分極を復元させる再分極工程を含む、請求項1に記載の圧電性複合基板の製造方法。
- 前記再分極工程は前記剥離工程の後に含む、請求項2に記載の圧電性複合基板の製造方法。
- 前記イオン注入工程は、前記第1の極性面に逆極性のイオンを注入する、請求項1〜3のいずれかに記載の圧電性複合基板の製造方法。
- 前記第1の極性面または前記第2の極性面に、部分的に前記極性面が露出する電極パターンを備える、請求項1〜4のいずれかに記載の圧電性複合基板の製造方法。
- 請求項1〜5のいずれかに記載の方法で製造された圧電性複合基板の、前記第1の圧電単結晶体に駆動電極を形成する工程を有する、圧電素子の製造方法。
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JP2010542105A JP5353897B2 (ja) | 2008-12-10 | 2009-12-08 | 圧電性複合基板の製造方法、および圧電素子の製造方法 |
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JP2008314093 | 2008-12-10 | ||
JP2008314093 | 2008-12-10 | ||
PCT/JP2009/070536 WO2010067794A1 (ja) | 2008-12-10 | 2009-12-08 | 圧電性複合基板の製造方法、および圧電素子の製造方法 |
JP2010542105A JP5353897B2 (ja) | 2008-12-10 | 2009-12-08 | 圧電性複合基板の製造方法、および圧電素子の製造方法 |
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JPWO2010067794A1 JPWO2010067794A1 (ja) | 2012-05-17 |
JP5353897B2 true JP5353897B2 (ja) | 2013-11-27 |
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JP (1) | JP5353897B2 (ja) |
WO (1) | WO2010067794A1 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4636292B2 (ja) * | 2008-08-27 | 2011-02-23 | 株式会社村田製作所 | 電子部品及び電子部品の製造方法 |
JP4582235B2 (ja) * | 2008-10-31 | 2010-11-17 | 株式会社村田製作所 | 圧電デバイスの製造方法 |
US9151153B2 (en) * | 2011-11-30 | 2015-10-06 | Baker Hughes Incorporated | Crystal sensor made by ion implantation for sensing a property of interest within a borehole in the earth |
DE102012202727B4 (de) * | 2012-02-22 | 2015-07-02 | Vectron International Gmbh | Verfahren zur Verbindung eines ersten elektronischen Bauelements mit einem zweiten Bauelement |
JP6567970B2 (ja) | 2013-07-25 | 2019-08-28 | 日本碍子株式会社 | 複合基板の製法 |
US20180048283A1 (en) * | 2015-04-16 | 2018-02-15 | Shin-Etsu Chemical Co., Ltd. | Lithium tantalate single crystal substrate, bonded substrate, manufacturing method of the bonded substrate, and surface acoustic wave device using the bonded substrate |
JP2017034527A (ja) * | 2015-08-04 | 2017-02-09 | セイコーエプソン株式会社 | 圧電素子、プローブ、超音波測定装置、電子機器、分極処理方法、及び、初期化装置 |
JP2017114694A (ja) * | 2015-12-21 | 2017-06-29 | 信越化学工業株式会社 | 化合物半導体積層基板及びその製造方法、並びに半導体素子 |
KR20210068131A (ko) * | 2018-10-16 | 2021-06-08 | 도호쿠 다이가쿠 | 음향파 디바이스들 |
JP7269719B2 (ja) * | 2018-12-05 | 2023-05-09 | 太陽誘電株式会社 | 圧電膜およびその製造方法、圧電デバイス、共振器、フィルタ並びにマルチプレクサ |
JP7271458B2 (ja) * | 2020-02-03 | 2023-05-11 | 信越化学工業株式会社 | 複合基板の製造方法 |
CN116032233A (zh) * | 2023-03-29 | 2023-04-28 | 武汉敏声新技术有限公司 | 谐振器的制备方法及谐振器 |
Citations (3)
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JPH1155070A (ja) * | 1997-06-02 | 1999-02-26 | Matsushita Electric Ind Co Ltd | 弾性表面波素子とその製造方法 |
JP2001223556A (ja) * | 2000-02-14 | 2001-08-17 | Ueda Japan Radio Co Ltd | 圧電振動子及びアレイ型圧電振動子 |
JP2003017967A (ja) * | 2001-06-29 | 2003-01-17 | Toshiba Corp | 弾性表面波素子及びその製造方法 |
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JPS55124316A (en) * | 1979-03-20 | 1980-09-25 | Toshiba Corp | Manufacture of piezoelectric substrate for surface wave element |
JP3264074B2 (ja) | 1994-01-24 | 2002-03-11 | 松下電器産業株式会社 | 積層強誘電体及びその接合方法 |
FR2788176B1 (fr) * | 1998-12-30 | 2001-05-25 | Thomson Csf | Dispositif a ondes acoustiques guidees dans une fine couche de materiau piezo-electrique collee par une colle moleculaire sur un substrat porteur et procede de fabrication |
FR2816445B1 (fr) * | 2000-11-06 | 2003-07-25 | Commissariat Energie Atomique | Procede de fabrication d'une structure empilee comprenant une couche mince adherant a un substrat cible |
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- 2009-12-08 WO PCT/JP2009/070536 patent/WO2010067794A1/ja active Application Filing
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JPH1155070A (ja) * | 1997-06-02 | 1999-02-26 | Matsushita Electric Ind Co Ltd | 弾性表面波素子とその製造方法 |
JP2001223556A (ja) * | 2000-02-14 | 2001-08-17 | Ueda Japan Radio Co Ltd | 圧電振動子及びアレイ型圧電振動子 |
JP2003017967A (ja) * | 2001-06-29 | 2003-01-17 | Toshiba Corp | 弾性表面波素子及びその製造方法 |
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WO2010067794A1 (ja) | 2010-06-17 |
JPWO2010067794A1 (ja) | 2012-05-17 |
US8572825B2 (en) | 2013-11-05 |
US20110220275A1 (en) | 2011-09-15 |
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