KR100821580B1 - 반도체 메모리 장치 - Google Patents

반도체 메모리 장치 Download PDF

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Publication number
KR100821580B1
KR100821580B1 KR1020060099545A KR20060099545A KR100821580B1 KR 100821580 B1 KR100821580 B1 KR 100821580B1 KR 1020060099545 A KR1020060099545 A KR 1020060099545A KR 20060099545 A KR20060099545 A KR 20060099545A KR 100821580 B1 KR100821580 B1 KR 100821580B1
Authority
KR
South Korea
Prior art keywords
signal
active
sense amplifier
signals
precharge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020060099545A
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English (en)
Korean (ko)
Inventor
강길옥
Original Assignee
주식회사 하이닉스반도체
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 하이닉스반도체 filed Critical 주식회사 하이닉스반도체
Priority to KR1020060099545A priority Critical patent/KR100821580B1/ko
Priority to US11/822,655 priority patent/US7583548B2/en
Priority to JP2007226776A priority patent/JP5000433B2/ja
Application granted granted Critical
Publication of KR100821580B1 publication Critical patent/KR100821580B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40618—Refresh operations over multiple banks or interleaving
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/08—Control thereof
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/06—Sense amplifier related aspects
    • G11C2207/065—Sense amplifier drivers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C2211/406—Refreshing of dynamic cells
    • G11C2211/4065—Low level details of refresh operations

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
KR1020060099545A 2006-10-12 2006-10-12 반도체 메모리 장치 Expired - Fee Related KR100821580B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020060099545A KR100821580B1 (ko) 2006-10-12 2006-10-12 반도체 메모리 장치
US11/822,655 US7583548B2 (en) 2006-10-12 2007-07-09 Semiconductor memory apparatus for allocating different read/write operating time to every bank
JP2007226776A JP5000433B2 (ja) 2006-10-12 2007-08-31 半導体記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060099545A KR100821580B1 (ko) 2006-10-12 2006-10-12 반도체 메모리 장치

Publications (1)

Publication Number Publication Date
KR100821580B1 true KR100821580B1 (ko) 2008-04-15

Family

ID=39302948

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020060099545A Expired - Fee Related KR100821580B1 (ko) 2006-10-12 2006-10-12 반도체 메모리 장치

Country Status (3)

Country Link
US (1) US7583548B2 (https=)
JP (1) JP5000433B2 (https=)
KR (1) KR100821580B1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9356397B2 (en) 2012-01-19 2016-05-31 Asustek Computer Inc. Connector and electronic system using the same
US11361815B1 (en) 2020-12-24 2022-06-14 Winbond Electronics Corp. Method and memory device including plurality of memory banks and having shared delay circuit
TWI761124B (zh) * 2021-03-12 2022-04-11 華邦電子股份有限公司 具有共用延遲電路的方法和記憶體裝置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980057449A (ko) * 1996-12-30 1998-09-25 김광호 반도체 메모리 장치의 칼럼선택 제어회로
JP2000011656A (ja) 1998-06-29 2000-01-14 Fujitsu Ltd 半導体メモリ及びこれを備えた半導体装置
KR20020042030A (ko) * 2000-11-29 2002-06-05 윤종용 리프레쉬 수행시간이 감소될 수 있는 다중 뱅크를구비하는 반도체 메모리 장치 및 리프레쉬 방법
KR20030050181A (ko) * 2001-12-18 2003-06-25 주식회사 하이닉스반도체 반도체 메모리 소자
KR20050101872A (ko) * 2004-04-20 2005-10-25 주식회사 하이닉스반도체 반도체 메모리 장치

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3244340B2 (ja) * 1993-05-24 2002-01-07 三菱電機株式会社 同期型半導体記憶装置
KR960009953B1 (ko) * 1994-01-27 1996-07-25 삼성전자 주식회사 반도체 메모리 장치의 센스앰프 제어회로
JP3696633B2 (ja) * 1994-07-27 2005-09-21 株式会社ルネサステクノロジ 半導体記憶装置
KR100271626B1 (ko) 1997-05-31 2000-12-01 김영환 비트라인 센스앰프의 오버드라이빙방법
KR100273274B1 (ko) 1998-01-21 2001-01-15 김영환 오버 드라이빙 제어회로
KR100271644B1 (ko) 1998-02-06 2000-12-01 김영환 센스앰프 오버드라이빙 전압제어 회로
JP2001167574A (ja) * 1999-12-08 2001-06-22 Mitsubishi Electric Corp 半導体記憶装置
US6347058B1 (en) 2000-05-19 2002-02-12 International Business Machines Corporation Sense amplifier with overdrive and regulated bitline voltage
KR100378685B1 (ko) 2000-12-29 2003-04-07 주식회사 하이닉스반도체 반도체 메모리 장치 및 그의 센스 앰프 제어 회로
KR100495918B1 (ko) 2002-12-16 2005-06-17 주식회사 하이닉스반도체 뱅크의 액티브 동작을 달리하는 반도체 기억 장치 및반도체 기억 장치에서의 뱅크 액티브 제어 방법
KR100587639B1 (ko) 2003-05-30 2006-06-08 주식회사 하이닉스반도체 계층화된 출력배선의 감지증폭기 드라이버를 구비한반도체 메모리 소자
KR100546333B1 (ko) * 2003-06-25 2006-01-26 삼성전자주식회사 감지 증폭기 드라이버 및 이를 구비하는 반도체 장치
US7127368B2 (en) 2004-11-19 2006-10-24 Stmicroelectronics Asia Pacific Pte. Ltd. On-chip temperature sensor for low voltage operation
KR100656470B1 (ko) * 2006-02-07 2006-12-11 주식회사 하이닉스반도체 반도체 메모리의 드라이버 제어장치 및 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980057449A (ko) * 1996-12-30 1998-09-25 김광호 반도체 메모리 장치의 칼럼선택 제어회로
JP2000011656A (ja) 1998-06-29 2000-01-14 Fujitsu Ltd 半導体メモリ及びこれを備えた半導体装置
KR20020042030A (ko) * 2000-11-29 2002-06-05 윤종용 리프레쉬 수행시간이 감소될 수 있는 다중 뱅크를구비하는 반도체 메모리 장치 및 리프레쉬 방법
KR20030050181A (ko) * 2001-12-18 2003-06-25 주식회사 하이닉스반도체 반도체 메모리 소자
KR20050101872A (ko) * 2004-04-20 2005-10-25 주식회사 하이닉스반도체 반도체 메모리 장치

Also Published As

Publication number Publication date
JP5000433B2 (ja) 2012-08-15
JP2008097806A (ja) 2008-04-24
US7583548B2 (en) 2009-09-01
US20080089149A1 (en) 2008-04-17

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