KR100815625B1 - 실리콘단결정 웨이퍼의 제조방법 - Google Patents
실리콘단결정 웨이퍼의 제조방법 Download PDFInfo
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- KR100815625B1 KR100815625B1 KR1020037001196A KR20037001196A KR100815625B1 KR 100815625 B1 KR100815625 B1 KR 100815625B1 KR 1020037001196 A KR1020037001196 A KR 1020037001196A KR 20037001196 A KR20037001196 A KR 20037001196A KR 100815625 B1 KR100815625 B1 KR 100815625B1
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- single crystal
- silicon single
- heat treatment
- crystal wafer
- wafer
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 title abstract description 23
- 235000012431 wafers Nutrition 0.000 title description 89
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title 1
- 238000010438 heat treatment Methods 0.000 claims abstract description 120
- 239000013078 crystal Substances 0.000 claims abstract description 72
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 63
- 239000001301 oxygen Substances 0.000 claims abstract description 63
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 63
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 62
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 62
- 239000010703 silicon Substances 0.000 claims abstract description 62
- 230000007547 defect Effects 0.000 claims abstract description 48
- 238000001816 cooling Methods 0.000 claims abstract description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 55
- 229910052757 nitrogen Inorganic materials 0.000 claims description 27
- 239000012298 atmosphere Substances 0.000 claims description 14
- 239000007789 gas Substances 0.000 claims description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 11
- 229910052799 carbon Inorganic materials 0.000 claims description 11
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 239000011261 inert gas Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 abstract description 27
- 239000002244 precipitate Substances 0.000 abstract description 26
- 239000002344 surface layer Substances 0.000 abstract description 13
- 238000004151 rapid thermal annealing Methods 0.000 description 22
- 239000011800 void material Substances 0.000 description 20
- 230000000052 comparative effect Effects 0.000 description 17
- 238000005247 gettering Methods 0.000 description 15
- 230000000694 effects Effects 0.000 description 14
- 229910001385 heavy metal Inorganic materials 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 238000001556 precipitation Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000012300 argon atmosphere Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000004627 transmission electron microscopy Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000010409 ironing Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
웨이퍼 종류 | 열처리공정 | 산소석출물 밀도 (counts/cm3 ) | DZ층의 폭(㎛) | |
실시예 1 | A | 횡형로 + RTA | 5.1 ×109 | 35 |
비교예 1 | A | 횡형로만 | 6.3 ×108 | 65 |
비교예 2 | A | 없음 | 1.0 ×107 | 측정불가 |
실시예 2 | B | 횡형로 + RTA | 1.0 ×108 | 측정불가 |
비교예 3 | B | 횡형로만 | 1.0 ×107 | 측정불가 |
비교예 4 | B | 없음 | 1.0 ×107 | 측정불가 |
Claims (9)
- 격자간산소를 함유하는 실리콘단결정 웨이퍼에 열처리를 실시함으로써 산소유기결함을 갖는 실리콘단결정 웨이퍼를 제조하는 방법에 있어서,상기 열처리는 적어도, 저항가열식 열처리로를 이용하여, 수소 분위기, 불활성 가스 분위기, 또는 이러한 혼합 가스 분위기로 열처리하는 공정과 급속가열·급속냉각장치를 이용하여 열처리하는 공정을 갖는 것을 특징으로 하는 실리콘단결정 웨이퍼의 제조방법.
- 제 1항에 있어서, 상기 저항가열식 열처리로를 이용하는 열처리는 1000~1300℃, 10~300분 범위에서 행하고, 상기 급속가열·급속냉각장치를 이용하는 열처리는 1000~1350℃, 1~300초 범위로 행하는 것을 특징으로 하는 실리콘단결정 웨이퍼의 제조방법.
- 제 1항에 있어서, 상기 열처리를 행하는 실리콘단결정 웨이퍼로서, 질소농도가 1 ×1010 ~ 5 ×1015개/cm3 범위로 도프된 실리콘단결정 웨이퍼를 이용하는 것을 특징으로 하는 실리콘단결정 웨이퍼의 제조방법.
- 제 2항에 있어서, 상기 열처리를 행하는 실리콘단결정 웨이퍼로서, 질소농도가 1 ×1010 ~ 5 ×1015개/cm3 범위로 도프된 실리콘단결정 웨이퍼를 이용하는 것을 특징으로 하는 실리콘단결정 웨이퍼의 제조방법.
- 제 1항에 있어서, 상기 열처리를 행하는 실리콘단결정 웨이퍼로서, 탄소농도가 0.1~5ppma 범위로 도프된 실리콘단결정 웨이퍼를 이용하는 것을 특징으로 하는 실리콘단결정 웨이퍼의 제조방법.
- 제 2항에 있어서, 상기 열처리를 행하는 실리콘단결정 웨이퍼로서, 탄소농도가 0.1~5ppma 범위로 도프된 실리콘단결정 웨이퍼를 이용하는 것을 특징으로 하는 실리콘단결정 웨이퍼의 제조방법.
- 제 3항에 있어서, 상기 열처리를 행하는 실리콘단결정 웨이퍼로서, 탄소농도가 0.1~5ppma 범위로 도프된 실리콘단결정 웨이퍼를 이용하는 것을 특징으로 하는 실리콘단결정 웨이퍼의 제조방법.
- 제 4항에 있어서, 상기 열처리를 행하는 실리콘단결정 웨이퍼로서, 탄소농도가 0.1~5ppma 범위로 도프된 실리콘단결정 웨이퍼를 이용하는 것을 특징으로 하는 실리콘단결정 웨이퍼의 제조방법.
- 제 1항 내지 제 8항 중 어느 한 항에 기재된 실리콘단결정 웨이퍼 제조방법으로 제조된 것을 특징으로 하는 실리콘단결정 웨이퍼.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2000-00229522 | 2000-07-28 | ||
JP2000229522A JP2002043318A (ja) | 2000-07-28 | 2000-07-28 | シリコン単結晶ウエーハの製造方法 |
PCT/JP2001/006274 WO2002011196A1 (fr) | 2000-07-28 | 2001-07-19 | Procede de fabrication de plaquette au silicium monocristallin |
Publications (2)
Publication Number | Publication Date |
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KR20030051604A KR20030051604A (ko) | 2003-06-25 |
KR100815625B1 true KR100815625B1 (ko) | 2008-03-21 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020037001196A KR100815625B1 (ko) | 2000-07-28 | 2001-07-19 | 실리콘단결정 웨이퍼의 제조방법 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6805743B2 (ko) |
EP (1) | EP1313137A1 (ko) |
JP (1) | JP2002043318A (ko) |
KR (1) | KR100815625B1 (ko) |
TW (1) | TW508701B (ko) |
WO (1) | WO2002011196A1 (ko) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6663708B1 (en) * | 2000-09-22 | 2003-12-16 | Mitsubishi Materials Silicon Corporation | Silicon wafer, and manufacturing method and heat treatment method of the same |
JP2003077925A (ja) * | 2001-08-31 | 2003-03-14 | Sumitomo Mitsubishi Silicon Corp | シリコンウェーハの製造方法及びシリコンウェーハ |
DE10336271B4 (de) * | 2003-08-07 | 2008-02-07 | Siltronic Ag | Siliciumscheibe und Verfahren zu deren Herstellung |
JP4529416B2 (ja) * | 2003-11-07 | 2010-08-25 | 信越半導体株式会社 | シリコン単結晶ウェーハの製造方法及びシリコン単結晶ウェーハ |
AU2003296844A1 (en) * | 2003-12-03 | 2005-06-24 | S.O.I.Tec Silicon On Insulator Technologies | Process for improving the surface roughness of a semiconductor wafer |
JP2006261632A (ja) * | 2005-02-18 | 2006-09-28 | Sumco Corp | シリコンウェーハの熱処理方法 |
JP2007149799A (ja) * | 2005-11-25 | 2007-06-14 | Shin Etsu Handotai Co Ltd | アニールウェーハの製造方法およびアニールウェーハ |
JP4853027B2 (ja) * | 2006-01-17 | 2012-01-11 | 信越半導体株式会社 | シリコン単結晶ウエーハの製造方法 |
JP4868880B2 (ja) * | 2006-02-15 | 2012-02-01 | 富士通株式会社 | シリコンウェーハの処理方法及びウェーハ処理装置 |
JP5239155B2 (ja) * | 2006-06-20 | 2013-07-17 | 信越半導体株式会社 | シリコンウエーハの製造方法 |
DE602007004173D1 (de) | 2006-12-01 | 2010-02-25 | Siltronic Ag | Silicium-Wafer und dessen Herstellungsmethode |
DE102007009281B4 (de) * | 2007-02-26 | 2013-03-14 | Infineon Technologies Austria Ag | Verfahren zum Erzeugen von Materialausscheidungen und Halbleitermaterialscheibe sowie Halbleiterbauelemente |
JP5205810B2 (ja) * | 2007-05-24 | 2013-06-05 | 株式会社Sumco | シリコン単結晶ウェーハの製造方法 |
JP5276863B2 (ja) * | 2008-03-21 | 2013-08-28 | グローバルウェーハズ・ジャパン株式会社 | シリコンウェーハ |
WO2010016586A1 (ja) | 2008-08-08 | 2010-02-11 | Sumco Techxiv株式会社 | 半導体ウェーハの製造方法 |
CN102934241B (zh) * | 2011-02-28 | 2015-09-02 | 松下电器产业株式会社 | 红外发光元件的制造方法 |
US8907494B2 (en) | 2013-03-14 | 2014-12-09 | International Business Machines Corporation | Electrical leakage reduction in stacked integrated circuits having through-silicon-via (TSV) structures |
JP6484762B2 (ja) * | 2016-07-06 | 2019-03-13 | 株式会社トクヤマ | 単結晶シリコン板状体およびその製造方法 |
CN106319635A (zh) * | 2016-09-30 | 2017-01-11 | 中国电子科技集团公司第二十六研究所 | 一种铈掺杂铝酸钇镥闪烁晶体光输出增强方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1167781A (ja) | 1997-08-08 | 1999-03-09 | Sumitomo Metal Ind Ltd | シリコン半導体基板の熱処理方法 |
JPH11302099A (ja) | 1998-04-21 | 1999-11-02 | Sumitomo Metal Ind Ltd | シリコン単結晶の製造方法 |
JP2000203999A (ja) * | 1999-01-08 | 2000-07-25 | Sumitomo Metal Ind Ltd | 半導体シリコンウェ―ハとその製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0232535A (ja) * | 1988-07-21 | 1990-02-02 | Kyushu Electron Metal Co Ltd | 半導体デバイス用シリコン基板の製造方法 |
JPH11251322A (ja) | 1998-02-27 | 1999-09-17 | Sony Corp | エピタキシャルシリコン基板及び固体撮像装置並びにこれらの製造方法 |
JP4084902B2 (ja) * | 1998-05-01 | 2008-04-30 | シルトロニック・ジャパン株式会社 | シリコン半導体基板及びその製造方法 |
JP3711199B2 (ja) * | 1998-07-07 | 2005-10-26 | 信越半導体株式会社 | シリコン基板の熱処理方法 |
US6336968B1 (en) * | 1998-09-02 | 2002-01-08 | Memc Electronic Materials, Inc. | Non-oxygen precipitating czochralski silicon wafers |
-
2000
- 2000-07-28 JP JP2000229522A patent/JP2002043318A/ja active Pending
-
2001
- 2001-07-19 KR KR1020037001196A patent/KR100815625B1/ko active IP Right Grant
- 2001-07-19 US US10/333,970 patent/US6805743B2/en not_active Expired - Lifetime
- 2001-07-19 WO PCT/JP2001/006274 patent/WO2002011196A1/ja not_active Application Discontinuation
- 2001-07-19 EP EP01951934A patent/EP1313137A1/en not_active Withdrawn
- 2001-07-26 TW TW090118353A patent/TW508701B/zh not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1167781A (ja) | 1997-08-08 | 1999-03-09 | Sumitomo Metal Ind Ltd | シリコン半導体基板の熱処理方法 |
JPH11302099A (ja) | 1998-04-21 | 1999-11-02 | Sumitomo Metal Ind Ltd | シリコン単結晶の製造方法 |
JP2000203999A (ja) * | 1999-01-08 | 2000-07-25 | Sumitomo Metal Ind Ltd | 半導体シリコンウェ―ハとその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2002043318A (ja) | 2002-02-08 |
KR20030051604A (ko) | 2003-06-25 |
US20030164139A1 (en) | 2003-09-04 |
TW508701B (en) | 2002-11-01 |
US6805743B2 (en) | 2004-10-19 |
EP1313137A1 (en) | 2003-05-21 |
WO2002011196A1 (fr) | 2002-02-07 |
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