WO2002011196A1 - Procede de fabrication de plaquette au silicium monocristallin - Google Patents
Procede de fabrication de plaquette au silicium monocristallin Download PDFInfo
- Publication number
- WO2002011196A1 WO2002011196A1 PCT/JP2001/006274 JP0106274W WO0211196A1 WO 2002011196 A1 WO2002011196 A1 WO 2002011196A1 JP 0106274 W JP0106274 W JP 0106274W WO 0211196 A1 WO0211196 A1 WO 0211196A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- heat treatment
- crystal silicon
- crystal
- silicon wafers
- manufacturing single
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 235000012431 wafers Nutrition 0.000 title 1
- 238000010438 heat treatment Methods 0.000 abstract 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 2
- 229910052760 oxygen Inorganic materials 0.000 abstract 2
- 239000001301 oxygen Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 238000001816 cooling Methods 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 abstract 1
- 125000004430 oxygen atom Chemical group O* 0.000 abstract 1
- 238000001556 precipitation Methods 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP01951934A EP1313137A1 (en) | 2000-07-28 | 2001-07-19 | Method for manufacturing single-crystal silicon wafers |
US10/333,970 US6805743B2 (en) | 2000-07-28 | 2001-07-19 | Method for manufacturing single-crystal-silicon wafers |
KR1020037001196A KR100815625B1 (ko) | 2000-07-28 | 2001-07-19 | 실리콘단결정 웨이퍼의 제조방법 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000-229522 | 2000-07-28 | ||
JP2000229522A JP2002043318A (ja) | 2000-07-28 | 2000-07-28 | シリコン単結晶ウエーハの製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2002011196A1 true WO2002011196A1 (fr) | 2002-02-07 |
Family
ID=18722627
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2001/006274 WO2002011196A1 (fr) | 2000-07-28 | 2001-07-19 | Procede de fabrication de plaquette au silicium monocristallin |
Country Status (6)
Country | Link |
---|---|
US (1) | US6805743B2 (ja) |
EP (1) | EP1313137A1 (ja) |
JP (1) | JP2002043318A (ja) |
KR (1) | KR100815625B1 (ja) |
TW (1) | TW508701B (ja) |
WO (1) | WO2002011196A1 (ja) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6663708B1 (en) * | 2000-09-22 | 2003-12-16 | Mitsubishi Materials Silicon Corporation | Silicon wafer, and manufacturing method and heat treatment method of the same |
JP2003077925A (ja) * | 2001-08-31 | 2003-03-14 | Sumitomo Mitsubishi Silicon Corp | シリコンウェーハの製造方法及びシリコンウェーハ |
DE10336271B4 (de) * | 2003-08-07 | 2008-02-07 | Siltronic Ag | Siliciumscheibe und Verfahren zu deren Herstellung |
JP4529416B2 (ja) * | 2003-11-07 | 2010-08-25 | 信越半導体株式会社 | シリコン単結晶ウェーハの製造方法及びシリコン単結晶ウェーハ |
DE60336687D1 (de) * | 2003-12-03 | 2011-05-19 | Soitec Silicon On Insulator | Prozess zum verbessern der oberflächenrauigkeit eines halbleiterwafers |
JP2006261632A (ja) * | 2005-02-18 | 2006-09-28 | Sumco Corp | シリコンウェーハの熱処理方法 |
JP2007149799A (ja) * | 2005-11-25 | 2007-06-14 | Shin Etsu Handotai Co Ltd | アニールウェーハの製造方法およびアニールウェーハ |
JP4853027B2 (ja) * | 2006-01-17 | 2012-01-11 | 信越半導体株式会社 | シリコン単結晶ウエーハの製造方法 |
JP4868880B2 (ja) * | 2006-02-15 | 2012-02-01 | 富士通株式会社 | シリコンウェーハの処理方法及びウェーハ処理装置 |
JP5239155B2 (ja) * | 2006-06-20 | 2013-07-17 | 信越半導体株式会社 | シリコンウエーハの製造方法 |
EP1928016B1 (en) * | 2006-12-01 | 2010-01-06 | Siltronic AG | Silicon wafer and method for manufacturing the same |
DE102007009281B4 (de) * | 2007-02-26 | 2013-03-14 | Infineon Technologies Austria Ag | Verfahren zum Erzeugen von Materialausscheidungen und Halbleitermaterialscheibe sowie Halbleiterbauelemente |
JP5205810B2 (ja) * | 2007-05-24 | 2013-06-05 | 株式会社Sumco | シリコン単結晶ウェーハの製造方法 |
JP5276863B2 (ja) * | 2008-03-21 | 2013-08-28 | グローバルウェーハズ・ジャパン株式会社 | シリコンウェーハ |
US8426297B2 (en) | 2008-08-08 | 2013-04-23 | Sumco Techxiv Corporation | Method for manufacturing semiconductor wafer |
CN102934241B (zh) * | 2011-02-28 | 2015-09-02 | 松下电器产业株式会社 | 红外发光元件的制造方法 |
US8907494B2 (en) | 2013-03-14 | 2014-12-09 | International Business Machines Corporation | Electrical leakage reduction in stacked integrated circuits having through-silicon-via (TSV) structures |
SG11201900068PA (en) * | 2016-07-06 | 2019-02-27 | Tokuyama Corp | Single crystal silicon plate-shaped body and production method therefor |
CN106319635A (zh) * | 2016-09-30 | 2017-01-11 | 中国电子科技集团公司第二十六研究所 | 一种铈掺杂铝酸钇镥闪烁晶体光输出增强方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0232535A (ja) * | 1988-07-21 | 1990-02-02 | Kyushu Electron Metal Co Ltd | 半導体デバイス用シリコン基板の製造方法 |
JPH1167781A (ja) * | 1997-08-08 | 1999-03-09 | Sumitomo Metal Ind Ltd | シリコン半導体基板の熱処理方法 |
JPH11251322A (ja) * | 1998-02-27 | 1999-09-17 | Sony Corp | エピタキシャルシリコン基板及び固体撮像装置並びにこれらの製造方法 |
JPH11302099A (ja) * | 1998-04-21 | 1999-11-02 | Sumitomo Metal Ind Ltd | シリコン単結晶の製造方法 |
JP2000026196A (ja) * | 1998-05-01 | 2000-01-25 | Nippon Steel Corp | シリコン半導体基板及びその製造方法 |
JP2000203999A (ja) * | 1999-01-08 | 2000-07-25 | Sumitomo Metal Ind Ltd | 半導体シリコンウェ―ハとその製造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3711199B2 (ja) * | 1998-07-07 | 2005-10-26 | 信越半導体株式会社 | シリコン基板の熱処理方法 |
US6336968B1 (en) * | 1998-09-02 | 2002-01-08 | Memc Electronic Materials, Inc. | Non-oxygen precipitating czochralski silicon wafers |
-
2000
- 2000-07-28 JP JP2000229522A patent/JP2002043318A/ja active Pending
-
2001
- 2001-07-19 US US10/333,970 patent/US6805743B2/en not_active Expired - Lifetime
- 2001-07-19 WO PCT/JP2001/006274 patent/WO2002011196A1/ja not_active Application Discontinuation
- 2001-07-19 EP EP01951934A patent/EP1313137A1/en not_active Withdrawn
- 2001-07-19 KR KR1020037001196A patent/KR100815625B1/ko active IP Right Grant
- 2001-07-26 TW TW090118353A patent/TW508701B/zh not_active IP Right Cessation
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0232535A (ja) * | 1988-07-21 | 1990-02-02 | Kyushu Electron Metal Co Ltd | 半導体デバイス用シリコン基板の製造方法 |
JPH1167781A (ja) * | 1997-08-08 | 1999-03-09 | Sumitomo Metal Ind Ltd | シリコン半導体基板の熱処理方法 |
JPH11251322A (ja) * | 1998-02-27 | 1999-09-17 | Sony Corp | エピタキシャルシリコン基板及び固体撮像装置並びにこれらの製造方法 |
JPH11302099A (ja) * | 1998-04-21 | 1999-11-02 | Sumitomo Metal Ind Ltd | シリコン単結晶の製造方法 |
JP2000026196A (ja) * | 1998-05-01 | 2000-01-25 | Nippon Steel Corp | シリコン半導体基板及びその製造方法 |
JP2000203999A (ja) * | 1999-01-08 | 2000-07-25 | Sumitomo Metal Ind Ltd | 半導体シリコンウェ―ハとその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR100815625B1 (ko) | 2008-03-21 |
US6805743B2 (en) | 2004-10-19 |
TW508701B (en) | 2002-11-01 |
JP2002043318A (ja) | 2002-02-08 |
KR20030051604A (ko) | 2003-06-25 |
US20030164139A1 (en) | 2003-09-04 |
EP1313137A1 (en) | 2003-05-21 |
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