KR100810773B1 - 플라즈마 에칭 방법 및 컴퓨터 판독 가능한 기억 매체 - Google Patents
플라즈마 에칭 방법 및 컴퓨터 판독 가능한 기억 매체 Download PDFInfo
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- KR100810773B1 KR100810773B1 KR1020060134818A KR20060134818A KR100810773B1 KR 100810773 B1 KR100810773 B1 KR 100810773B1 KR 1020060134818 A KR1020060134818 A KR 1020060134818A KR 20060134818 A KR20060134818 A KR 20060134818A KR 100810773 B1 KR100810773 B1 KR 100810773B1
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
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Abstract
Description
Claims (7)
- 피처리 기판이 수용되고, 진공배기 가능한 처리 용기와,처리 용기내에 대향하여 배치되는 제 1 전극 및 피처리 기판을 지지하는 제 2 전극과,상기 제 2 전극에 상대적으로 주파수가 높은 제 1 고주파 전력을 인가하는 제 1 고주파 전력 인가 유닛과,상기 제 2 전극에 상대적으로 주파수가 낮은 제 2 고주파 전력을 인가하는 제 2 고주파 전력 인가 유닛과,상기 제 1 전극에 직류 전압을 인가하는 직류 전원과,상기 처리 용기내에 처리 가스를 공급하는 처리 가스 공급 유닛을구비하는 플라즈마 에칭 장치를 이용한 상기 피처리 기판의 플라즈마 에칭 방법에 있어서,상기 피처리 기판 상의 유기막 또는 어모퍼스(amorphous) 카본막을, 실리콘을 포함하는 마스크를 이용하여 에칭할 때, 상기 제 2 전극에 상기 제 1 고주파 전력 및 제 2 고주파 전력을 인가하여, 상기 처리 가스 공급 유닛으로부터 토출되는 CF 계 가스를 포함하지 않는 처리 가스를 플라즈마화하고, 또한 상기 제 1 전극에 직류 전압을 인가함으로써, 상기 피처리 기판의 플라즈마 에칭을 실행하는 것을 특징으로 하는 플라즈마 에칭 방법.
- 제 1 항에 있어서,상기 CF 계 가스를 포함하지 않는 처리 가스로서, O2, 및 O2, N2의 조합, 및 O2, N2, CO의 조합, 및 O2, CO의 조합, 및 O2, CO2의 조합, 및 O2, CH4의 조합, 및 O2, NH3의 조합 중 어느 하나를 사용하는 것을 특징으로 하는 플라즈마 에칭 방법.
- 제 1 항 또는 제 2 항에 있어서,상기 직류 전원으로부터의 직류 전압값은, -100V∼-1500V의 범위내인 것을 특징으로 하는 플라즈마 에칭 방법.
- 제 3 항에 있어서,상기 직류 전원으로부터의 직류 전압값은, -100V∼-1000V의 범위내인 것을 특징으로 하는 플라즈마 에칭 방법.
- 제 4 항에 있어서,상기 직류 전원으로부터의 직류 전압값은, -100V∼-600V의 범위내인 것을 특 징으로 하는 플라즈마 에칭 방법.
- 제 1 항 또는 제 2 항에 있어서,상기 제 1 전극은, 접지 전위에 대하여 직류적으로 플로팅 상태인 것을 특징으로 하는 플라즈마 에칭 방법.
- 컴퓨터상에서 동작하는 제어 프로그램이 기억된 컴퓨터 기억 매체에 있어서,상기 제어 프로그램은, 실행시에, 제 1 항 또는 제 2 항에 기재된 플라즈마 에칭 방법이 실행되도록, 플라즈마 처리 장치를 제어하는 것을 특징으로 하는 컴퓨터 판독 가능한 기억 매체.
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Application Number | Priority Date | Filing Date | Title |
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JP2005378608A JP4827081B2 (ja) | 2005-12-28 | 2005-12-28 | プラズマエッチング方法およびコンピュータ読み取り可能な記憶媒体 |
JPJP-P-2005-00378608 | 2005-12-28 |
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KR20070070098A KR20070070098A (ko) | 2007-07-03 |
KR100810773B1 true KR100810773B1 (ko) | 2008-03-06 |
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KR1020060134818A KR100810773B1 (ko) | 2005-12-28 | 2006-12-27 | 플라즈마 에칭 방법 및 컴퓨터 판독 가능한 기억 매체 |
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US (1) | US8128831B2 (ko) |
JP (1) | JP4827081B2 (ko) |
KR (1) | KR100810773B1 (ko) |
CN (1) | CN1992164B (ko) |
TW (1) | TWI450328B (ko) |
Families Citing this family (56)
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JP5047644B2 (ja) * | 2007-01-31 | 2012-10-10 | 東京エレクトロン株式会社 | プラズマエッチング方法、プラズマエッチング装置、制御プログラム及びコンピュータ記憶媒体 |
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