KR100777468B1 - 유전체, 압전 부재, 잉크 제트 헤드, 잉크 제트 기록 장치 및 유전체의 제조 방법 - Google Patents

유전체, 압전 부재, 잉크 제트 헤드, 잉크 제트 기록 장치 및 유전체의 제조 방법 Download PDF

Info

Publication number
KR100777468B1
KR100777468B1 KR20050025275A KR20050025275A KR100777468B1 KR 100777468 B1 KR100777468 B1 KR 100777468B1 KR 20050025275 A KR20050025275 A KR 20050025275A KR 20050025275 A KR20050025275 A KR 20050025275A KR 100777468 B1 KR100777468 B1 KR 100777468B1
Authority
KR
South Korea
Prior art keywords
layer
dielectric
substrate
forming
ink jet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR20050025275A
Other languages
English (en)
Korean (ko)
Other versions
KR20060044810A (ko
Inventor
겐이찌 다께다
도시히로 이후꾸
데쯔로오 후꾸이
히로시 후나꾸보
쇼오지 오까모또
Original Assignee
캐논 가부시끼가이샤
히로시 후나꾸보
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 캐논 가부시끼가이샤, 히로시 후나꾸보 filed Critical 캐논 가부시끼가이샤
Publication of KR20060044810A publication Critical patent/KR20060044810A/ko
Application granted granted Critical
Publication of KR100777468B1 publication Critical patent/KR100777468B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/80Constructional details
    • H10N30/87Electrodes or interconnections, e.g. leads or terminals
    • H10N30/877Conductive materials
    • H10N30/878Conductive materials the principal material being non-metallic, e.g. oxide or carbon based
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • H10N30/06Forming electrodes or interconnections, e.g. leads or terminals
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • H10N30/07Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/076Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/80Constructional details
    • H10N30/85Piezoelectric or electrostrictive active materials
    • H10N30/853Ceramic compositions
    • H10N30/8548Lead-based oxides
    • H10N30/8554Lead-zirconium titanate [PZT] based
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/20Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H10N30/204Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
    • H10N30/2047Membrane type

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Ceramic Capacitors (AREA)
  • Semiconductor Memories (AREA)
KR20050025275A 2004-03-29 2005-03-28 유전체, 압전 부재, 잉크 제트 헤드, 잉크 제트 기록 장치 및 유전체의 제조 방법 Expired - Fee Related KR100777468B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2004-00094597 2004-03-29
JP2004094597 2004-03-29

Publications (2)

Publication Number Publication Date
KR20060044810A KR20060044810A (ko) 2006-05-16
KR100777468B1 true KR100777468B1 (ko) 2007-11-20

Family

ID=34909426

Family Applications (1)

Application Number Title Priority Date Filing Date
KR20050025275A Expired - Fee Related KR100777468B1 (ko) 2004-03-29 2005-03-28 유전체, 압전 부재, 잉크 제트 헤드, 잉크 제트 기록 장치 및 유전체의 제조 방법

Country Status (7)

Country Link
US (1) US7265483B2 (enExample)
EP (1) EP1585180B1 (enExample)
JP (2) JP2005313628A (enExample)
KR (1) KR100777468B1 (enExample)
CN (1) CN100418768C (enExample)
DE (1) DE602005024208D1 (enExample)
TW (1) TWI253392B (enExample)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060000542A1 (en) * 2004-06-30 2006-01-05 Yongki Min Metal oxide ceramic thin film on base metal electrode
US7497962B2 (en) * 2004-08-06 2009-03-03 Canon Kabushiki Kaisha Method of manufacturing liquid discharge head and method of manufacturing substrate for liquid discharge head
US7290315B2 (en) * 2004-10-21 2007-11-06 Intel Corporation Method for making a passive device structure
US7629269B2 (en) * 2005-03-31 2009-12-08 Intel Corporation High-k thin film grain size control
US7375412B1 (en) * 2005-03-31 2008-05-20 Intel Corporation iTFC with optimized C(T)
US20060220177A1 (en) * 2005-03-31 2006-10-05 Palanduz Cengiz A Reduced porosity high-k thin film mixed grains for thin film capacitor applications
US7453144B2 (en) * 2005-06-29 2008-11-18 Intel Corporation Thin film capacitors and methods of making the same
JP5188076B2 (ja) * 2006-04-03 2013-04-24 キヤノン株式会社 圧電素子及びその製造方法、電子デバイス、インクジェット装置
JP2008258516A (ja) * 2007-04-09 2008-10-23 Funai Electric Co Ltd 圧電素子及び結晶質セラミックスの成膜方法
KR100901201B1 (ko) * 2008-02-22 2009-06-08 서울시립대학교 산학협력단 초음파 스피커용 세슘디옥사이드가 첨가된피에스엔-피지티 세라믹스의 제조방법
JP2010137485A (ja) * 2008-12-15 2010-06-24 Seiko Epson Corp 液体噴射ヘッド、液体噴射装置及びアクチュエーター装置並びに液体噴射ヘッドの製造方法
JP4524000B1 (ja) * 2009-01-20 2010-08-11 パナソニック株式会社 圧電体薄膜とその製造方法、インクジェットヘッド、インクジェットヘッドを用いて画像を形成する方法、角速度センサ、角速度センサを用いて角速度を測定する方法、圧電発電素子ならびに圧電発電素子を用いた発電方法
JP5527527B2 (ja) 2010-03-12 2014-06-18 セイコーエプソン株式会社 液体噴射ヘッド及び液体噴射装置
TWI450426B (zh) * 2010-09-09 2014-08-21 Microjet Technology Co Ltd 壓電致動模組及其所適用之壓電噴墨頭之製造方法
CN103210515B (zh) * 2010-09-15 2015-06-03 株式会社理光 机电转换器件及其制造方法及液滴排出头和液滴排出设备
JP5751407B2 (ja) * 2011-01-19 2015-07-22 セイコーエプソン株式会社 液体噴射ヘッド、液体噴射装置、圧電素子、超音波センサー及び赤外線センサー
JP5743059B2 (ja) * 2011-01-19 2015-07-01 セイコーエプソン株式会社 液体噴射ヘッド、液体噴射装置、圧電素子、超音波センサー及び赤外線センサー
JP5743060B2 (ja) * 2011-01-19 2015-07-01 セイコーエプソン株式会社 液体噴射ヘッド、液体噴射装置、圧電素子、超音波センサー及び赤外線センサー
JP6020784B2 (ja) * 2011-01-19 2016-11-02 セイコーエプソン株式会社 圧電素子、液体噴射ヘッド、液体噴射装置、超音波デバイス及びセンサー
CN102136315B (zh) * 2011-03-21 2012-08-15 四川师范大学 多层陶瓷全面积LNO/Ag/LNO复合电极及制备方法
WO2013018603A1 (ja) * 2011-07-29 2013-02-07 株式会社村田製作所 弾性波デバイスの製造方法
JP5836754B2 (ja) * 2011-10-04 2015-12-24 富士フイルム株式会社 圧電体素子及びその製造方法
US8866367B2 (en) 2011-10-17 2014-10-21 The United States Of America As Represented By The Secretary Of The Army Thermally oxidized seed layers for the production of {001} textured electrodes and PZT devices and method of making
US9761785B2 (en) 2011-10-17 2017-09-12 The United States Of America As Represented By The Secretary Of The Army Stylo-epitaxial piezoelectric and ferroelectric devices and method of manufacturing
US10387824B2 (en) * 2012-12-21 2019-08-20 United Parcel Service Of America, Inc. Systems and methods for delivery of an item
JP5382196B2 (ja) * 2012-12-27 2014-01-08 セイコーエプソン株式会社 液体吐出ヘッドの製造方法
JP6123992B2 (ja) * 2013-03-05 2017-05-10 セイコーエプソン株式会社 液体噴射ヘッド、液体噴射装置、圧電素子及びその製造方法
JP6142597B2 (ja) * 2013-03-18 2017-06-07 株式会社リコー 圧電体薄膜素子および該圧電体薄膜素子の製造方法、並びに圧電アクチュエータ、液滴吐出ヘッドおよび液滴吐出装置
JP5528612B1 (ja) * 2013-07-09 2014-06-25 Roca株式会社 半導体装置
JP2015033799A (ja) 2013-08-09 2015-02-19 セイコーエプソン株式会社 液体噴射ヘッド、および、液体噴射装置
EP2942804B1 (en) 2014-05-08 2017-07-12 Flosfia Inc. Crystalline multilayer structure and semiconductor device
CN104505146B (zh) * 2014-11-20 2017-02-22 北京工业大学 一种具有纳米核壳及内晶型结构的介电复合材料及制备方法
CN109414932B (zh) * 2016-09-26 2021-08-13 惠普发展公司,有限责任合伙企业 薄膜堆叠体
CN108400020B (zh) * 2018-03-06 2020-10-30 云南大学 一类层状钙钛矿型纳米氧化物的超级电容器电极材料
US11302618B2 (en) * 2018-04-09 2022-04-12 Intel Corporation Microelectronic assemblies having substrate-integrated perovskite layers
JP7341155B2 (ja) * 2018-09-28 2023-09-08 日本碍子株式会社 センサ素子およびセンサ素子を製造する方法
EP3877184A4 (en) * 2019-04-29 2022-06-15 Hewlett-Packard Development Company, L.P. MANUFACTURING OF A CORROSION TOLERANT MICROELECTRO-MECHANICAL FLUID EJECTION DEVICE
JP2022514522A (ja) 2019-04-29 2022-02-14 ヒューレット-パッカード デベロップメント カンパニー エル.ピー. 耐腐食性微小電子機械流体吐出デバイス
US12308365B2 (en) 2021-06-21 2025-05-20 Samsung Electronics Co., Ltd. Thin film structure including method of manufacturing

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003243736A (ja) * 2002-02-19 2003-08-29 Seiko Epson Corp 圧電アクチュエータ、液滴噴射ヘッド、およびそれを用いた液滴噴射装置
WO2003098714A1 (en) 2002-05-15 2003-11-27 Seiko Epson Corporation Piezoelectric actuator and liquid jet head
JP2004096050A (ja) * 2002-09-04 2004-03-25 Seiko Epson Corp 強誘電体デバイスの作製方法、およびそれを用いた強誘電体メモリ、圧電素子、インクジェット式ヘッドおよびインクジェットプリンタ

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3104550B2 (ja) 1994-10-17 2000-10-30 松下電器産業株式会社 圧電アクチュエータおよびその製造方法
CA2225681C (en) * 1995-06-28 2001-09-11 Bell Communications Research, Inc. Barrier layer for ferroelectric capacitor integrated on silicon
JP3435966B2 (ja) * 1996-03-13 2003-08-11 株式会社日立製作所 強誘電体素子とその製造方法
JP3347010B2 (ja) * 1997-01-30 2002-11-20 株式会社東芝 薄膜誘電体素子
JP3684059B2 (ja) * 1998-01-07 2005-08-17 株式会社東芝 半導体装置
JP3109485B2 (ja) * 1998-08-03 2000-11-13 日本電気株式会社 金属酸化物誘電体膜の気相成長方法
JP3817729B2 (ja) * 2001-11-08 2006-09-06 セイコーエプソン株式会社 圧電アクチュエータ及び液体吐出ヘッド
JP3817730B2 (ja) * 2001-12-10 2006-09-06 セイコーエプソン株式会社 圧電アクチュエータの製造方法、インクジェット式記録ヘッド、及びプリンタ
JP4099818B2 (ja) 2001-12-10 2008-06-11 セイコーエプソン株式会社 圧電アクチュエータ及びインクジェット式記録ヘッド
US7033001B2 (en) * 2001-12-18 2006-04-25 Matsushita Electric Industrial Co., Ltd. Piezoelectric element, ink jet head, angular velocity sensor, manufacturing method thereof, and ink jet type recording apparatus
JP2004006722A (ja) * 2002-03-27 2004-01-08 Seiko Epson Corp 圧電アクチュエータ、インクジェット式ヘッド及び吐出装置
JP2003347618A (ja) * 2002-05-28 2003-12-05 Matsushita Electric Ind Co Ltd 圧電素子、インクジェットヘッド及びこれらの製造方法、並びにインクジェット式記録装置
US6969157B2 (en) 2002-05-31 2005-11-29 Matsushita Electric Industrial Co., Ltd. Piezoelectric element, ink jet head, angular velocity sensor, method for manufacturing the same, and ink jet recording apparatus
US7083270B2 (en) * 2002-06-20 2006-08-01 Matsushita Electric Industrial Co., Ltd. Piezoelectric element, ink jet head, angular velocity sensor, method for manufacturing the same, and ink jet recording apparatus
JP4457587B2 (ja) * 2002-09-05 2010-04-28 セイコーエプソン株式会社 電子デバイス用基体の製造方法及び電子デバイスの製造方法
JP3873935B2 (ja) * 2003-06-18 2007-01-31 セイコーエプソン株式会社 強誘電体メモリ素子
JP4165347B2 (ja) * 2003-06-25 2008-10-15 セイコーエプソン株式会社 圧電素子の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003243736A (ja) * 2002-02-19 2003-08-29 Seiko Epson Corp 圧電アクチュエータ、液滴噴射ヘッド、およびそれを用いた液滴噴射装置
WO2003098714A1 (en) 2002-05-15 2003-11-27 Seiko Epson Corporation Piezoelectric actuator and liquid jet head
JP2004096050A (ja) * 2002-09-04 2004-03-25 Seiko Epson Corp 強誘電体デバイスの作製方法、およびそれを用いた強誘電体メモリ、圧電素子、インクジェット式ヘッドおよびインクジェットプリンタ

Also Published As

Publication number Publication date
TW200602195A (en) 2006-01-16
JP2011192975A (ja) 2011-09-29
EP1585180A2 (en) 2005-10-12
US20050213020A1 (en) 2005-09-29
JP2005313628A (ja) 2005-11-10
CN100418768C (zh) 2008-09-17
EP1585180B1 (en) 2010-10-20
KR20060044810A (ko) 2006-05-16
TWI253392B (en) 2006-04-21
EP1585180A3 (en) 2007-10-03
CN1676331A (zh) 2005-10-05
DE602005024208D1 (de) 2010-12-02
US7265483B2 (en) 2007-09-04

Similar Documents

Publication Publication Date Title
KR100777468B1 (ko) 유전체, 압전 부재, 잉크 제트 헤드, 잉크 제트 기록 장치 및 유전체의 제조 방법
KR100875315B1 (ko) 유전체 소자, 압전 소자, 잉크젯 헤드 및 잉크젯 헤드제조 방법
JP4717344B2 (ja) 誘電体薄膜素子、圧電アクチュエータおよび液体吐出ヘッド
KR100672883B1 (ko) 압전 소자
KR100738290B1 (ko) 유전체 소자, 압전체 소자, 잉크 제트 헤드 및 잉크 제트기록 장치, 및 그 제조 방법
KR100748727B1 (ko) 유전체 소자, 압전 소자, 잉크젯 헤드 및 잉크젯 기록 장치, 및 그 제조 방법
JP5164052B2 (ja) 圧電体素子、液体吐出ヘッド及び液体吐出装置
JP2005175099A5 (enExample)
US7235917B2 (en) Piezoelectric member element and liquid discharge head comprising element thereof
JP4250593B2 (ja) 誘電体素子、圧電体素子、インクジェットヘッド及びその製造方法
JP4290151B2 (ja) 圧電/電歪体素子構造体及び圧電/電歪体素子構造体の製造方法、並びに液体噴射ヘッドの製造方法
JP4282079B2 (ja) 圧電体素子及び該素子を備えた液体吐出ヘッド

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

G170 Re-publication after modification of scope of protection [patent]
PG1701 Publication of correction

St.27 status event code: A-5-5-P10-P19-oth-PG1701

Patent document republication publication date: 20080415

Republication note text: Request for Correction Notice (Document Request)

Gazette number: 1007774680000

Gazette reference publication date: 20071120

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

R17-X000 Change to representative recorded

St.27 status event code: A-5-5-R10-R17-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20121023

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20131022

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20141021

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20151016

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

FPAY Annual fee payment

Payment date: 20161019

Year of fee payment: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20171110

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20171110