TWI253392B - Dielectric member, piezoelectric member, ink jet head, ink jet recording apparatus and producing method for ink jet recording apparatus - Google Patents
Dielectric member, piezoelectric member, ink jet head, ink jet recording apparatus and producing method for ink jet recording apparatus Download PDFInfo
- Publication number
- TWI253392B TWI253392B TW94108835A TW94108835A TWI253392B TW I253392 B TWI253392 B TW I253392B TW 94108835 A TW94108835 A TW 94108835A TW 94108835 A TW94108835 A TW 94108835A TW I253392 B TWI253392 B TW I253392B
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- Taiwan
- Prior art keywords
- layer
- dielectric
- substrate
- forming
- oxide
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 46
- 239000000758 substrate Substances 0.000 claims abstract description 124
- 229910052751 metal Inorganic materials 0.000 claims description 35
- 239000002184 metal Substances 0.000 claims description 35
- 239000013078 crystal Substances 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 11
- 150000001875 compounds Chemical class 0.000 claims description 8
- 229910044991 metal oxide Inorganic materials 0.000 claims description 8
- 150000004706 metal oxides Chemical class 0.000 claims description 8
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 3
- 229910052500 inorganic mineral Inorganic materials 0.000 claims description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims description 3
- 239000011707 mineral Substances 0.000 claims description 3
- 229910052693 Europium Inorganic materials 0.000 claims description 2
- 229910052779 Neodymium Inorganic materials 0.000 claims description 2
- 229910052772 Samarium Inorganic materials 0.000 claims description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 1
- 238000003475 lamination Methods 0.000 claims 1
- 239000007788 liquid Substances 0.000 description 38
- 239000000463 material Substances 0.000 description 17
- 239000010936 titanium Substances 0.000 description 17
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 10
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 9
- 239000000203 mixture Substances 0.000 description 9
- 238000004891 communication Methods 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 7
- QNRATNLHPGXHMA-XZHTYLCXSA-N (r)-(6-ethoxyquinolin-4-yl)-[(2s,4s,5r)-5-ethyl-1-azabicyclo[2.2.2]octan-2-yl]methanol;hydrochloride Chemical group Cl.C([C@H]([C@H](C1)CC)C2)CN1[C@@H]2[C@H](O)C1=CC=NC2=CC=C(OCC)C=C21 QNRATNLHPGXHMA-XZHTYLCXSA-N 0.000 description 5
- 229910002113 barium titanate Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 229910052726 zirconium Inorganic materials 0.000 description 4
- 238000005452 bending Methods 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 229910052745 lead Inorganic materials 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910002370 SrTiO3 Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229920002101 Chitin Polymers 0.000 description 1
- 229910002254 LaCoO3 Inorganic materials 0.000 description 1
- 229910003781 PbTiO3 Inorganic materials 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- JTCFNJXQEFODHE-UHFFFAOYSA-N [Ca].[Ti] Chemical compound [Ca].[Ti] JTCFNJXQEFODHE-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910001566 austenite Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- KHEMNHQQEMAABL-UHFFFAOYSA-J dihydroxy(dioxo)chromium Chemical compound O[Cr](O)(=O)=O.O[Cr](O)(=O)=O KHEMNHQQEMAABL-UHFFFAOYSA-J 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000010436 fluorite Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910001026 inconel Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000002940 repellent Effects 0.000 description 1
- 239000005871 repellent Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/877—Conductive materials
- H10N30/878—Conductive materials the principal material being non-metallic, e.g. oxide or carbon based
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8548—Lead-based oxides
- H10N30/8554—Lead-zirconium titanate [PZT] based
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
- H10N30/2047—Membrane type
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Ceramic Capacitors (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004094597 | 2004-03-29 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200602195A TW200602195A (en) | 2006-01-16 |
| TWI253392B true TWI253392B (en) | 2006-04-21 |
Family
ID=34909426
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW94108835A TWI253392B (en) | 2004-03-29 | 2005-03-22 | Dielectric member, piezoelectric member, ink jet head, ink jet recording apparatus and producing method for ink jet recording apparatus |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7265483B2 (enExample) |
| EP (1) | EP1585180B1 (enExample) |
| JP (2) | JP2005313628A (enExample) |
| KR (1) | KR100777468B1 (enExample) |
| CN (1) | CN100418768C (enExample) |
| DE (1) | DE602005024208D1 (enExample) |
| TW (1) | TWI253392B (enExample) |
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| US7497962B2 (en) * | 2004-08-06 | 2009-03-03 | Canon Kabushiki Kaisha | Method of manufacturing liquid discharge head and method of manufacturing substrate for liquid discharge head |
| US7290315B2 (en) * | 2004-10-21 | 2007-11-06 | Intel Corporation | Method for making a passive device structure |
| US7629269B2 (en) * | 2005-03-31 | 2009-12-08 | Intel Corporation | High-k thin film grain size control |
| US7375412B1 (en) * | 2005-03-31 | 2008-05-20 | Intel Corporation | iTFC with optimized C(T) |
| US20060220177A1 (en) * | 2005-03-31 | 2006-10-05 | Palanduz Cengiz A | Reduced porosity high-k thin film mixed grains for thin film capacitor applications |
| US7453144B2 (en) * | 2005-06-29 | 2008-11-18 | Intel Corporation | Thin film capacitors and methods of making the same |
| JP5188076B2 (ja) * | 2006-04-03 | 2013-04-24 | キヤノン株式会社 | 圧電素子及びその製造方法、電子デバイス、インクジェット装置 |
| JP2008258516A (ja) * | 2007-04-09 | 2008-10-23 | Funai Electric Co Ltd | 圧電素子及び結晶質セラミックスの成膜方法 |
| KR100901201B1 (ko) * | 2008-02-22 | 2009-06-08 | 서울시립대학교 산학협력단 | 초음파 스피커용 세슘디옥사이드가 첨가된피에스엔-피지티 세라믹스의 제조방법 |
| JP2010137485A (ja) * | 2008-12-15 | 2010-06-24 | Seiko Epson Corp | 液体噴射ヘッド、液体噴射装置及びアクチュエーター装置並びに液体噴射ヘッドの製造方法 |
| CN102113145B (zh) * | 2009-01-20 | 2013-06-05 | 松下电器产业株式会社 | 压电体薄膜及其制造方法、喷墨头、使用喷墨头形成图像的方法、角速度传感器、使用角速度传感器测定角速度的方法、压电发电元件以及使用了压电发电元件的发电方法 |
| JP5527527B2 (ja) | 2010-03-12 | 2014-06-18 | セイコーエプソン株式会社 | 液体噴射ヘッド及び液体噴射装置 |
| TWI450426B (zh) * | 2010-09-09 | 2014-08-21 | Microjet Technology Co Ltd | 壓電致動模組及其所適用之壓電噴墨頭之製造方法 |
| EP2617076B1 (en) * | 2010-09-15 | 2014-12-10 | Ricoh Company, Limited | Electromechanical transducing device and manufacturing method thereof |
| JP5743059B2 (ja) * | 2011-01-19 | 2015-07-01 | セイコーエプソン株式会社 | 液体噴射ヘッド、液体噴射装置、圧電素子、超音波センサー及び赤外線センサー |
| JP5751407B2 (ja) * | 2011-01-19 | 2015-07-22 | セイコーエプソン株式会社 | 液体噴射ヘッド、液体噴射装置、圧電素子、超音波センサー及び赤外線センサー |
| JP5743060B2 (ja) * | 2011-01-19 | 2015-07-01 | セイコーエプソン株式会社 | 液体噴射ヘッド、液体噴射装置、圧電素子、超音波センサー及び赤外線センサー |
| JP6020784B2 (ja) * | 2011-01-19 | 2016-11-02 | セイコーエプソン株式会社 | 圧電素子、液体噴射ヘッド、液体噴射装置、超音波デバイス及びセンサー |
| CN102136315B (zh) * | 2011-03-21 | 2012-08-15 | 四川师范大学 | 多层陶瓷全面积LNO/Ag/LNO复合电极及制备方法 |
| WO2013018603A1 (ja) * | 2011-07-29 | 2013-02-07 | 株式会社村田製作所 | 弾性波デバイスの製造方法 |
| JP5836754B2 (ja) * | 2011-10-04 | 2015-12-24 | 富士フイルム株式会社 | 圧電体素子及びその製造方法 |
| US8866367B2 (en) | 2011-10-17 | 2014-10-21 | The United States Of America As Represented By The Secretary Of The Army | Thermally oxidized seed layers for the production of {001} textured electrodes and PZT devices and method of making |
| US9761785B2 (en) | 2011-10-17 | 2017-09-12 | The United States Of America As Represented By The Secretary Of The Army | Stylo-epitaxial piezoelectric and ferroelectric devices and method of manufacturing |
| US10387824B2 (en) * | 2012-12-21 | 2019-08-20 | United Parcel Service Of America, Inc. | Systems and methods for delivery of an item |
| JP5382196B2 (ja) * | 2012-12-27 | 2014-01-08 | セイコーエプソン株式会社 | 液体吐出ヘッドの製造方法 |
| JP6123992B2 (ja) * | 2013-03-05 | 2017-05-10 | セイコーエプソン株式会社 | 液体噴射ヘッド、液体噴射装置、圧電素子及びその製造方法 |
| JP6142597B2 (ja) * | 2013-03-18 | 2017-06-07 | 株式会社リコー | 圧電体薄膜素子および該圧電体薄膜素子の製造方法、並びに圧電アクチュエータ、液滴吐出ヘッドおよび液滴吐出装置 |
| JP5528612B1 (ja) * | 2013-07-09 | 2014-06-25 | Ｒｏｃａ株式会社 | 半導体装置 |
| JP2015033799A (ja) | 2013-08-09 | 2015-02-19 | セイコーエプソン株式会社 | 液体噴射ヘッド、および、液体噴射装置 |
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| CN108400020B (zh) * | 2018-03-06 | 2020-10-30 | 云南大学 | 一类层状钙钛矿型纳米氧化物的超级电容器电极材料 |
| US11302618B2 (en) * | 2018-04-09 | 2022-04-12 | Intel Corporation | Microelectronic assemblies having substrate-integrated perovskite layers |
| DE112019003806T5 (de) * | 2018-09-28 | 2021-05-12 | Ngk Insulators, Ltd. | Sensorelement |
| EP3962793A4 (en) | 2019-04-29 | 2023-01-04 | Hewlett-Packard Development Company, L.P. | CORROSION TOLERANT MICROELECTRO-MECHANICAL FLUID EJECTION DEVICE |
| US20220048763A1 (en) * | 2019-04-29 | 2022-02-17 | Hewlett-Packard Development Company, L.P. | Manufacturing a corrosion tolerant micro-electromechanical fluid ejection device |
| US12308365B2 (en) | 2021-06-21 | 2025-05-20 | Samsung Electronics Co., Ltd. | Thin film structure including method of manufacturing |
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| JP4099818B2 (ja) | 2001-12-10 | 2008-06-11 | セイコーエプソン株式会社 | 圧電アクチュエータ及びインクジェット式記録ヘッド |
| CA2438360C (en) * | 2001-12-18 | 2010-02-09 | Matsushita Electric Industrial Co., Ltd. | Piezoelectric element, ink jet head, angular velocity sensor, manufacturing method thereof, and ink jet printing apparatus |
| JP3902023B2 (ja) * | 2002-02-19 | 2007-04-04 | セイコーエプソン株式会社 | 圧電アクチュエータ、液滴噴射ヘッド、およびそれを用いた液滴噴射装置 |
| JP2004006722A (ja) * | 2002-03-27 | 2004-01-08 | Seiko Epson Corp | 圧電アクチュエータ、インクジェット式ヘッド及び吐出装置 |
| JP4432776B2 (ja) | 2002-05-15 | 2010-03-17 | セイコーエプソン株式会社 | 圧電アクチュエータ及び液体噴射ヘッド |
| JP2003347618A (ja) * | 2002-05-28 | 2003-12-05 | Matsushita Electric Ind Co Ltd | 圧電素子、インクジェットヘッド及びこれらの製造方法、並びにインクジェット式記録装置 |
| US6969157B2 (en) * | 2002-05-31 | 2005-11-29 | Matsushita Electric Industrial Co., Ltd. | Piezoelectric element, ink jet head, angular velocity sensor, method for manufacturing the same, and ink jet recording apparatus |
| US7083270B2 (en) * | 2002-06-20 | 2006-08-01 | Matsushita Electric Industrial Co., Ltd. | Piezoelectric element, ink jet head, angular velocity sensor, method for manufacturing the same, and ink jet recording apparatus |
| JP4178888B2 (ja) | 2002-09-04 | 2008-11-12 | セイコーエプソン株式会社 | 強誘電体デバイスの作製方法、およびそれを用いた強誘電体メモリ、圧電素子、インクジェット式ヘッドおよびインクジェットプリンタ |
| JP4457587B2 (ja) * | 2002-09-05 | 2010-04-28 | セイコーエプソン株式会社 | 電子デバイス用基体の製造方法及び電子デバイスの製造方法 |
| JP3873935B2 (ja) * | 2003-06-18 | 2007-01-31 | セイコーエプソン株式会社 | 強誘電体メモリ素子 |
| JP4165347B2 (ja) * | 2003-06-25 | 2008-10-15 | セイコーエプソン株式会社 | 圧電素子の製造方法 |
-
2005
- 2005-03-22 US US11/085,091 patent/US7265483B2/en not_active Expired - Fee Related
- 2005-03-22 TW TW94108835A patent/TWI253392B/zh not_active IP Right Cessation
- 2005-03-23 EP EP20050006447 patent/EP1585180B1/en not_active Expired - Lifetime
- 2005-03-23 DE DE200560024208 patent/DE602005024208D1/de not_active Expired - Lifetime
- 2005-03-28 KR KR20050025275A patent/KR100777468B1/ko not_active Expired - Fee Related
- 2005-03-29 CN CNB2005100625742A patent/CN100418768C/zh not_active Expired - Fee Related
- 2005-03-29 JP JP2005095223A patent/JP2005313628A/ja active Pending
-
2011
- 2011-02-14 JP JP2011029105A patent/JP2011192975A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US20050213020A1 (en) | 2005-09-29 |
| TW200602195A (en) | 2006-01-16 |
| CN100418768C (zh) | 2008-09-17 |
| JP2011192975A (ja) | 2011-09-29 |
| KR20060044810A (ko) | 2006-05-16 |
| KR100777468B1 (ko) | 2007-11-20 |
| EP1585180A2 (en) | 2005-10-12 |
| US7265483B2 (en) | 2007-09-04 |
| CN1676331A (zh) | 2005-10-05 |
| EP1585180A3 (en) | 2007-10-03 |
| JP2005313628A (ja) | 2005-11-10 |
| DE602005024208D1 (de) | 2010-12-02 |
| EP1585180B1 (en) | 2010-10-20 |
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