CN100418768C - 介电体、压电体、喷墨头、喷墨记录装置及喷墨头制造方法 - Google Patents
介电体、压电体、喷墨头、喷墨记录装置及喷墨头制造方法 Download PDFInfo
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- CN100418768C CN100418768C CNB2005100625742A CN200510062574A CN100418768C CN 100418768 C CN100418768 C CN 100418768C CN B2005100625742 A CNB2005100625742 A CN B2005100625742A CN 200510062574 A CN200510062574 A CN 200510062574A CN 100418768 C CN100418768 C CN 100418768C
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- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
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- 229910001566 austenite Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
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- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
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- 229910052727 yttrium Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/877—Conductive materials
- H10N30/878—Conductive materials the principal material being non-metallic, e.g. oxide or carbon based
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8548—Lead-based oxides
- H10N30/8554—Lead-zirconium titanate [PZT] based
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
- H10N30/2047—Membrane type
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Ceramic Capacitors (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004-094597 | 2004-03-29 | ||
| JP2004094597 | 2004-03-29 | ||
| JP2004094597 | 2004-03-29 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1676331A CN1676331A (zh) | 2005-10-05 |
| CN100418768C true CN100418768C (zh) | 2008-09-17 |
Family
ID=34909426
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100625742A Expired - Fee Related CN100418768C (zh) | 2004-03-29 | 2005-03-29 | 介电体、压电体、喷墨头、喷墨记录装置及喷墨头制造方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7265483B2 (enExample) |
| EP (1) | EP1585180B1 (enExample) |
| JP (2) | JP2005313628A (enExample) |
| KR (1) | KR100777468B1 (enExample) |
| CN (1) | CN100418768C (enExample) |
| DE (1) | DE602005024208D1 (enExample) |
| TW (1) | TWI253392B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106183419A (zh) * | 2013-08-09 | 2016-12-07 | 精工爱普生株式会社 | 液体喷射头以及液体喷射装置 |
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| US20060000542A1 (en) * | 2004-06-30 | 2006-01-05 | Yongki Min | Metal oxide ceramic thin film on base metal electrode |
| US7497962B2 (en) * | 2004-08-06 | 2009-03-03 | Canon Kabushiki Kaisha | Method of manufacturing liquid discharge head and method of manufacturing substrate for liquid discharge head |
| US7290315B2 (en) * | 2004-10-21 | 2007-11-06 | Intel Corporation | Method for making a passive device structure |
| US7629269B2 (en) * | 2005-03-31 | 2009-12-08 | Intel Corporation | High-k thin film grain size control |
| US7375412B1 (en) * | 2005-03-31 | 2008-05-20 | Intel Corporation | iTFC with optimized C(T) |
| US20060220177A1 (en) * | 2005-03-31 | 2006-10-05 | Palanduz Cengiz A | Reduced porosity high-k thin film mixed grains for thin film capacitor applications |
| US7453144B2 (en) * | 2005-06-29 | 2008-11-18 | Intel Corporation | Thin film capacitors and methods of making the same |
| JP5188076B2 (ja) * | 2006-04-03 | 2013-04-24 | キヤノン株式会社 | 圧電素子及びその製造方法、電子デバイス、インクジェット装置 |
| JP2008258516A (ja) * | 2007-04-09 | 2008-10-23 | Funai Electric Co Ltd | 圧電素子及び結晶質セラミックスの成膜方法 |
| KR100901201B1 (ko) * | 2008-02-22 | 2009-06-08 | 서울시립대학교 산학협력단 | 초음파 스피커용 세슘디옥사이드가 첨가된피에스엔-피지티 세라믹스의 제조방법 |
| JP2010137485A (ja) * | 2008-12-15 | 2010-06-24 | Seiko Epson Corp | 液体噴射ヘッド、液体噴射装置及びアクチュエーター装置並びに液体噴射ヘッドの製造方法 |
| CN102113145B (zh) * | 2009-01-20 | 2013-06-05 | 松下电器产业株式会社 | 压电体薄膜及其制造方法、喷墨头、使用喷墨头形成图像的方法、角速度传感器、使用角速度传感器测定角速度的方法、压电发电元件以及使用了压电发电元件的发电方法 |
| JP5527527B2 (ja) | 2010-03-12 | 2014-06-18 | セイコーエプソン株式会社 | 液体噴射ヘッド及び液体噴射装置 |
| TWI450426B (zh) * | 2010-09-09 | 2014-08-21 | Microjet Technology Co Ltd | 壓電致動模組及其所適用之壓電噴墨頭之製造方法 |
| EP2617076B1 (en) * | 2010-09-15 | 2014-12-10 | Ricoh Company, Limited | Electromechanical transducing device and manufacturing method thereof |
| JP5743059B2 (ja) * | 2011-01-19 | 2015-07-01 | セイコーエプソン株式会社 | 液体噴射ヘッド、液体噴射装置、圧電素子、超音波センサー及び赤外線センサー |
| JP5751407B2 (ja) * | 2011-01-19 | 2015-07-22 | セイコーエプソン株式会社 | 液体噴射ヘッド、液体噴射装置、圧電素子、超音波センサー及び赤外線センサー |
| JP5743060B2 (ja) * | 2011-01-19 | 2015-07-01 | セイコーエプソン株式会社 | 液体噴射ヘッド、液体噴射装置、圧電素子、超音波センサー及び赤外線センサー |
| JP6020784B2 (ja) * | 2011-01-19 | 2016-11-02 | セイコーエプソン株式会社 | 圧電素子、液体噴射ヘッド、液体噴射装置、超音波デバイス及びセンサー |
| CN102136315B (zh) * | 2011-03-21 | 2012-08-15 | 四川师范大学 | 多层陶瓷全面积LNO/Ag/LNO复合电极及制备方法 |
| WO2013018603A1 (ja) * | 2011-07-29 | 2013-02-07 | 株式会社村田製作所 | 弾性波デバイスの製造方法 |
| JP5836754B2 (ja) * | 2011-10-04 | 2015-12-24 | 富士フイルム株式会社 | 圧電体素子及びその製造方法 |
| US8866367B2 (en) | 2011-10-17 | 2014-10-21 | The United States Of America As Represented By The Secretary Of The Army | Thermally oxidized seed layers for the production of {001} textured electrodes and PZT devices and method of making |
| US9761785B2 (en) | 2011-10-17 | 2017-09-12 | The United States Of America As Represented By The Secretary Of The Army | Stylo-epitaxial piezoelectric and ferroelectric devices and method of manufacturing |
| US10387824B2 (en) * | 2012-12-21 | 2019-08-20 | United Parcel Service Of America, Inc. | Systems and methods for delivery of an item |
| JP5382196B2 (ja) * | 2012-12-27 | 2014-01-08 | セイコーエプソン株式会社 | 液体吐出ヘッドの製造方法 |
| JP6123992B2 (ja) * | 2013-03-05 | 2017-05-10 | セイコーエプソン株式会社 | 液体噴射ヘッド、液体噴射装置、圧電素子及びその製造方法 |
| JP6142597B2 (ja) * | 2013-03-18 | 2017-06-07 | 株式会社リコー | 圧電体薄膜素子および該圧電体薄膜素子の製造方法、並びに圧電アクチュエータ、液滴吐出ヘッドおよび液滴吐出装置 |
| JP5528612B1 (ja) * | 2013-07-09 | 2014-06-25 | Roca株式会社 | 半導体装置 |
| US9590050B2 (en) | 2014-05-08 | 2017-03-07 | Flosfia, Inc. | Crystalline multilayer structure and semiconductor device |
| CN104505146B (zh) * | 2014-11-20 | 2017-02-22 | 北京工业大学 | 一种具有纳米核壳及内晶型结构的介电复合材料及制备方法 |
| US10894406B2 (en) * | 2016-09-26 | 2021-01-19 | Hewlett-Packard Development Company, L.P. | Thin film stacks |
| CN108400020B (zh) * | 2018-03-06 | 2020-10-30 | 云南大学 | 一类层状钙钛矿型纳米氧化物的超级电容器电极材料 |
| US11302618B2 (en) * | 2018-04-09 | 2022-04-12 | Intel Corporation | Microelectronic assemblies having substrate-integrated perovskite layers |
| DE112019003806T5 (de) * | 2018-09-28 | 2021-05-12 | Ngk Insulators, Ltd. | Sensorelement |
| EP3962793A4 (en) | 2019-04-29 | 2023-01-04 | Hewlett-Packard Development Company, L.P. | CORROSION TOLERANT MICROELECTRO-MECHANICAL FLUID EJECTION DEVICE |
| US20220048763A1 (en) * | 2019-04-29 | 2022-02-17 | Hewlett-Packard Development Company, L.P. | Manufacturing a corrosion tolerant micro-electromechanical fluid ejection device |
| US12308365B2 (en) | 2021-06-21 | 2025-05-20 | Samsung Electronics Co., Ltd. | Thin film structure including method of manufacturing |
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- 2005-03-22 TW TW94108835A patent/TWI253392B/zh not_active IP Right Cessation
- 2005-03-23 EP EP20050006447 patent/EP1585180B1/en not_active Expired - Lifetime
- 2005-03-23 DE DE200560024208 patent/DE602005024208D1/de not_active Expired - Lifetime
- 2005-03-28 KR KR20050025275A patent/KR100777468B1/ko not_active Expired - Fee Related
- 2005-03-29 CN CNB2005100625742A patent/CN100418768C/zh not_active Expired - Fee Related
- 2005-03-29 JP JP2005095223A patent/JP2005313628A/ja active Pending
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2011
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| CN106183419A (zh) * | 2013-08-09 | 2016-12-07 | 精工爱普生株式会社 | 液体喷射头以及液体喷射装置 |
| CN106183419B (zh) * | 2013-08-09 | 2018-05-22 | 精工爱普生株式会社 | 液体喷射头以及液体喷射装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20050213020A1 (en) | 2005-09-29 |
| TW200602195A (en) | 2006-01-16 |
| TWI253392B (en) | 2006-04-21 |
| JP2011192975A (ja) | 2011-09-29 |
| KR20060044810A (ko) | 2006-05-16 |
| KR100777468B1 (ko) | 2007-11-20 |
| EP1585180A2 (en) | 2005-10-12 |
| US7265483B2 (en) | 2007-09-04 |
| CN1676331A (zh) | 2005-10-05 |
| EP1585180A3 (en) | 2007-10-03 |
| JP2005313628A (ja) | 2005-11-10 |
| DE602005024208D1 (de) | 2010-12-02 |
| EP1585180B1 (en) | 2010-10-20 |
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