KR100672883B1 - 압전 소자 - Google Patents
압전 소자 Download PDFInfo
- Publication number
- KR100672883B1 KR100672883B1 KR1020057014001A KR20057014001A KR100672883B1 KR 100672883 B1 KR100672883 B1 KR 100672883B1 KR 1020057014001 A KR1020057014001 A KR 1020057014001A KR 20057014001 A KR20057014001 A KR 20057014001A KR 100672883 B1 KR100672883 B1 KR 100672883B1
- Authority
- KR
- South Korea
- Prior art keywords
- piezoelectric
- piezoelectric element
- lower electrode
- electrostrictive
- substrate
- Prior art date
Links
- 239000000463 material Substances 0.000 claims abstract description 341
- 239000013078 crystal Substances 0.000 claims abstract description 52
- 239000002131 composite material Substances 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 69
- 238000000034 method Methods 0.000 claims description 57
- 239000010408 film Substances 0.000 claims description 49
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 claims description 18
- 238000004544 sputter deposition Methods 0.000 claims description 15
- 239000010409 thin film Substances 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 4
- 239000002994 raw material Substances 0.000 claims 2
- 230000000052 comparative effect Effects 0.000 description 30
- 238000005259 measurement Methods 0.000 description 28
- 238000002441 X-ray diffraction Methods 0.000 description 18
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 12
- 239000007788 liquid Substances 0.000 description 12
- 238000013507 mapping Methods 0.000 description 11
- 238000007639 printing Methods 0.000 description 8
- 229910002367 SrTiO Inorganic materials 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 238000006073 displacement reaction Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000010287 polarization Effects 0.000 description 5
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000001747 exhibiting effect Effects 0.000 description 4
- 238000003980 solgel method Methods 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 3
- 238000001962 electrophoresis Methods 0.000 description 3
- 238000007716 flux method Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000001027 hydrothermal synthesis Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229910000457 iridium oxide Inorganic materials 0.000 description 3
- 229910052746 lanthanum Inorganic materials 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 229910052712 strontium Inorganic materials 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 229910001233 yttria-stabilized zirconia Inorganic materials 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910004121 SrRuO Inorganic materials 0.000 description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 2
- 238000007737 ion beam deposition Methods 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- DKDQMLPMKQLBHQ-UHFFFAOYSA-N strontium;barium(2+);oxido(dioxo)niobium Chemical compound [Sr+2].[Ba+2].[O-][Nb](=O)=O.[O-][Nb](=O)=O.[O-][Nb](=O)=O.[O-][Nb](=O)=O DKDQMLPMKQLBHQ-UHFFFAOYSA-N 0.000 description 2
- QNRATNLHPGXHMA-XZHTYLCXSA-N (r)-(6-ethoxyquinolin-4-yl)-[(2s,4s,5r)-5-ethyl-1-azabicyclo[2.2.2]octan-2-yl]methanol;hydrochloride Chemical compound Cl.C([C@H]([C@H](C1)CC)C2)CN1[C@@H]2[C@H](O)C1=CC=NC2=CC=C(OCC)C=C21 QNRATNLHPGXHMA-XZHTYLCXSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000000347 anisotropic wet etching Methods 0.000 description 1
- DUPIXUINLCPYLU-UHFFFAOYSA-N barium lead Chemical compound [Ba].[Pb] DUPIXUINLCPYLU-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229940036348 bismuth carbonate Drugs 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000002017 high-resolution X-ray diffraction Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- UKDIAJWKFXFVFG-UHFFFAOYSA-N potassium;oxido(dioxo)niobium Chemical compound [K+].[O-][Nb](=O)=O UKDIAJWKFXFVFG-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000011573 trace mineral Substances 0.000 description 1
- 235000013619 trace mineral Nutrition 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14201—Structure of print heads with piezoelectric elements
- B41J2/14233—Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/09—Forming piezoelectric or electrostrictive materials
- H10N30/093—Forming inorganic materials
- H10N30/095—Forming inorganic materials by melting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
- H10N30/2047—Membrane type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8548—Lead-based oxides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8548—Lead-based oxides
- H10N30/8554—Lead-zirconium titanate [PZT] based
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
- B41J2202/01—Embodiments of or processes related to ink-jet heads
- B41J2202/03—Specific materials used
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
Description
제1 실시예 | 비교예1 | |
쌍정(쌍정율) | 있음 (1.0) | 없음 |
압전 상수(pC/N) | 2500 | 1800 |
제2 실시예 | 제3 실시예 | 비교예2 | |
쌍정(쌍정율) | 있음 (1.0) | 있음 (0.01) | 없음 |
압전 상수 (pC/N) | 600 | 500 | 300 |
제4 실시예 | 비교예3 | |
쌍정 | 있음 | 없음 |
변위량 (㎛) | 0.45 | 0.25 |
박리 테스트 | 우수함 | 나쁘지도 좋지도 않음 |
제5 실시예 | 비교예4 | |
쌍정 | 있음 | 없음 |
토출량 (pl) | 19 | 15 |
토출 속도 (m/sec) | 15 | 12 |
Claims (20)
- 상부 전극과, 압전체와, 하부 전극을 포함하는 압전체 소자로서,상기 하부 전극 상에 성막된 상기 압전체는, 막두께 1㎛ 이상 내지 10㎛ 이하의 박막이고, 일반식 ABO3으로 구성된 복합 산화물이고 쌍정을 갖는 정방정 또는 사방정인, 쌍정면이 {110}으로 표시된 군으로부터 선택된 하나인 것을 특징으로 하는 압전체 소자.
- 상부 전극과, 압전체와, 하부 전극을 포함하는 압전체 소자로서,상기 하부 전극 상에 성막된 상기 압전체는, 막두께 1㎛ 이상 내지 10㎛ 이하의 박막이고, 일반식 ABO3으로 구성된 복합 산화물이고 쌍정을 갖는 능면체정인, 쌍정면이 {100}으로 표시된 군으로부터 선택된 하나인 것을 특징으로 하는 압전체 소자.
- 제1항 또는 제2항에 있어서,상기 압전체의 쌍정율이 0.001 이상 내지 1.0 이하인 압전체 소자.
- 제1항 또는 제2항에 있어서,상기 압전체가 배향성(orientation property)을 갖는 압전체 소자.
- 제4항에 있어서,상기 압전체의 배향율이, 적어도 일축방향으로 99% 이상인 압전체 소자.
- 제1항 또는 제2항에 있어서,상기 압전체가 상부 전극과 접촉하는 결정 주면이 {100}, {111} 및 {110} 중 어느 하나인 압전체 소자.
- 제1항 또는 제2항에 있어서,상기 압전체가 막두께 1㎛ 이상 내지 5㎛ 이하의 박막인 압전체 소자.
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 제1항 또는 제2항의 압전체 소자를 이용한 압전 액튜에이터.
- 제1항 또는 제2항의 압전체 소자를 이용한 잉크젯 기록 헤드.
- 제1항 또는 제2항의 압전체 소자의 제조 방법으로서,하부 전극을 갖는 기판을 400℃ 이상으로 유지하는 공정과,상기 압전체의 원료를 상기 하부 전극 상에 직접 공급하여, 상기 하부 전극 상에 1㎛ 이상 내지 10㎛ 이하의 상기 압전체의 박막을 성막하는 공정과,상기 압전체의 박막 상에, 상부 전극을 형성하는 공정을 갖는 것을 특징으로 하는 압전체 소자의 제조 방법.
- 제17항에 있어서,상기 압전체의 박막을 성막하는 공정은, 스퍼터링법 또는 MOCVD법인 것을 특징으로 하는 압전체 소자의 제조 방법.
- 제18항에 있어서,상기 스퍼터링법을 이용한 상기 압전체의 박막을 성막하는 공정에서, 상기 기판 온도의 변화를 10% 이하로 억제하는 것을 특징으로 하는 압전체 소자의 제조 방법.
- 제19항에 있어서,상기 스퍼터링법을 이용한 상기 압전체의 박막을 성막하는 공정에 있어서, 상기 기판과 상기 압전체의 원료의 타겟과의 거리를 변화시키는 것을 특징으로 하는 압전체 소자의 제조 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2003-00024452 | 2003-01-31 | ||
JP2003024452 | 2003-01-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050106405A KR20050106405A (ko) | 2005-11-09 |
KR100672883B1 true KR100672883B1 (ko) | 2007-01-24 |
Family
ID=32820765
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020057014001A KR100672883B1 (ko) | 2003-01-31 | 2004-01-30 | 압전 소자 |
Country Status (6)
Country | Link |
---|---|
US (2) | US7144101B2 (ko) |
EP (1) | EP1588437B1 (ko) |
KR (1) | KR100672883B1 (ko) |
CN (1) | CN100590902C (ko) |
AT (1) | ATE537568T1 (ko) |
WO (1) | WO2004068605A1 (ko) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4717344B2 (ja) | 2003-12-10 | 2011-07-06 | キヤノン株式会社 | 誘電体薄膜素子、圧電アクチュエータおよび液体吐出ヘッド |
US7235917B2 (en) * | 2004-08-10 | 2007-06-26 | Canon Kabushiki Kaisha | Piezoelectric member element and liquid discharge head comprising element thereof |
US8082640B2 (en) * | 2004-08-31 | 2011-12-27 | Canon Kabushiki Kaisha | Method for manufacturing a ferroelectric member element structure |
JP2006069152A (ja) * | 2004-09-06 | 2006-03-16 | Canon Inc | インクジェットヘッド及びその製造方法 |
SG124303A1 (en) | 2005-01-18 | 2006-08-30 | Agency Science Tech & Res | Thin films of ferroelectric materials and a methodfor preparing same |
JP5164052B2 (ja) | 2005-01-19 | 2013-03-13 | キヤノン株式会社 | 圧電体素子、液体吐出ヘッド及び液体吐出装置 |
JP5297576B2 (ja) * | 2005-03-28 | 2013-09-25 | セイコーエプソン株式会社 | 圧電素子及びアクチュエータ装置並びに液体噴射ヘッド及び液体噴射装置 |
US7998362B2 (en) * | 2005-08-23 | 2011-08-16 | Canon Kabushiki Kaisha | Piezoelectric substance, piezoelectric element, liquid discharge head using piezoelectric element, liquid discharge apparatus, and production method of piezoelectric element |
US8142678B2 (en) * | 2005-08-23 | 2012-03-27 | Canon Kabushiki Kaisha | Perovskite type oxide material, piezoelectric element, liquid discharge head and liquid discharge apparatus using the same, and method of producing perovskite type oxide material |
US7521845B2 (en) * | 2005-08-23 | 2009-04-21 | Canon Kabushiki Kaisha | Piezoelectric substance, piezoelectric element, liquid discharge head using piezoelectric element, and liquid discharge apparatus |
US7591543B2 (en) * | 2005-08-23 | 2009-09-22 | Canon Kabushiki Kaisha | Piezoelectric member, piezoelectric member element, liquid discharge head in use thereof, liquid discharge apparatus and method of manufacturing piezoelectric member |
US20070046153A1 (en) * | 2005-08-23 | 2007-03-01 | Canon Kabushiki Kaisha | Piezoelectric substrate, piezoelectric element, liquid discharge head and liquid discharge apparatus |
US7528530B2 (en) * | 2005-08-23 | 2009-05-05 | Canon Kabushiki Kaisha | Piezoelectric substance, piezoelectric substance element, liquid discharge head, liquid discharge device and method for producing piezoelectric substance |
US7528532B2 (en) * | 2005-08-23 | 2009-05-05 | Canon Kabushiki Kaisha | Piezoelectric substance and manufacturing method thereof, piezoelectric element and liquid discharge head using such piezoelectric element and liquid discharge apparatus |
JP5041765B2 (ja) * | 2005-09-05 | 2012-10-03 | キヤノン株式会社 | エピタキシャル酸化物膜、圧電膜、圧電膜素子、圧電膜素子を用いた液体吐出ヘッド及び液体吐出装置 |
US7759845B2 (en) * | 2006-03-10 | 2010-07-20 | Canon Kabushiki Kaisha | Piezoelectric substance element, liquid discharge head utilizing the same and optical element |
US7984977B2 (en) * | 2006-07-14 | 2011-07-26 | Canon Kabushiki Kaisha | Piezoelectric element, manufacturing method for piezoelectric body, and liquid jet head |
US7874648B2 (en) * | 2006-07-14 | 2011-01-25 | Canon Kabushiki Kaisha | Manufacturing method for piezoelectric body, piezoelectric element, and liquid discharge head |
JP5300184B2 (ja) * | 2006-07-18 | 2013-09-25 | キヤノン株式会社 | 圧電体、圧電体素子、圧電体素子を用いた液体吐出ヘッド及び液体吐出装置 |
US20080204970A1 (en) * | 2007-02-28 | 2008-08-28 | Uchicago Argonne, Llc | Transparent oxide capacitor structures |
JP5127268B2 (ja) * | 2007-03-02 | 2013-01-23 | キヤノン株式会社 | 圧電体、圧電体素子、圧電体素子を用いた液体吐出ヘッド及び液体吐出装置 |
KR100901201B1 (ko) * | 2008-02-22 | 2009-06-08 | 서울시립대학교 산학협력단 | 초음파 스피커용 세슘디옥사이드가 첨가된피에스엔-피지티 세라믹스의 제조방법 |
JP5180889B2 (ja) * | 2009-03-25 | 2013-04-10 | 日本碍子株式会社 | 複合基板、それを用いた弾性波デバイス及び複合基板の製法 |
JP5585767B2 (ja) * | 2010-04-14 | 2014-09-10 | セイコーエプソン株式会社 | 液体噴射ヘッド、液体噴射装置および圧電素子 |
JP5585768B2 (ja) * | 2010-04-14 | 2014-09-10 | セイコーエプソン株式会社 | 液体噴射ヘッド、液体噴射装置および圧電素子 |
US9691544B2 (en) * | 2011-08-18 | 2017-06-27 | Winchester Technologies, LLC | Electrostatically tunable magnetoelectric inductors with large inductance tunability |
JP5808262B2 (ja) * | 2012-01-23 | 2015-11-10 | 株式会社サイオクス | 圧電体素子及び圧電体デバイス |
US9887344B2 (en) * | 2014-07-01 | 2018-02-06 | Seiko Epson Corporation | Piezoelectric element, piezoelectric actuator device, liquid ejecting head, liquid ejecting apparatus, and ultrasonic measuring apparatus |
US10115886B2 (en) * | 2014-11-17 | 2018-10-30 | The Hong Kong University Of Science And Technology | Twin engineering to improve the switchability and rotatability of polarizations and domains in ferroelectric and piezoelectric materials |
JP2017092097A (ja) * | 2015-11-04 | 2017-05-25 | セイコーエプソン株式会社 | 圧電素子、超音波プローブ、超音波測定装置及び圧電素子の製造方法 |
US10910551B2 (en) * | 2017-11-06 | 2021-02-02 | Samsung Electronics Co., Ltd. | Piezoelectric material, piezoelectric device including the piezoelectric material, and method of manufacturing the piezoelectric material |
CN110075720A (zh) * | 2019-03-11 | 2019-08-02 | 湘潭大学 | 一种无铅BaTiO3-PVDF复合膜及其制备方法 |
CN117902544A (zh) * | 2023-12-27 | 2024-04-19 | 武汉理工大学 | 一种机电耦合器件单元及其制备与应用 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4109359A (en) | 1976-06-07 | 1978-08-29 | The United States Of America As Represented By The Secretary Of The Navy | Method of making ferroelectric crystals having tailored domain patterns |
US5402791A (en) * | 1993-08-06 | 1995-04-04 | Kabushiki Kaisha Toshiba | Piezoelectric single crystal, ultrasonic probe, and array-type ultrasonic probe |
FI101563B (fi) * | 1995-07-11 | 1998-07-15 | Adaptamat Tech Oy | Menetelmä kaksosrakenteen suuntautumisen ohjaamiseksi ja siinä käytett ävä aktuaattori |
JP3321369B2 (ja) * | 1996-09-27 | 2002-09-03 | 日本碍子株式会社 | 表面弾性波装置およびその基板およびその製造方法 |
JPH10251093A (ja) * | 1997-03-14 | 1998-09-22 | Toshiba Corp | 酸化物圧電体の製造方法 |
JPH1110861A (ja) * | 1997-06-19 | 1999-01-19 | Brother Ind Ltd | インクジェットプリンタヘッド |
US20020036282A1 (en) | 1998-10-19 | 2002-03-28 | Yet-Ming Chiang | Electromechanical actuators |
JP4568926B2 (ja) | 1999-07-14 | 2010-10-27 | ソニー株式会社 | 磁気機能素子及び磁気記録装置 |
JP2001328867A (ja) | 2000-05-19 | 2001-11-27 | Toshiba Corp | 圧電材料および超音波プローブ |
JP3796394B2 (ja) | 2000-06-21 | 2006-07-12 | キヤノン株式会社 | 圧電素子の製造方法および液体噴射記録ヘッドの製造方法 |
JP3754897B2 (ja) | 2001-02-09 | 2006-03-15 | キヤノン株式会社 | 半導体装置用基板およびsoi基板の製造方法 |
JP3833070B2 (ja) | 2001-02-09 | 2006-10-11 | キヤノン株式会社 | 液体噴射ヘッドおよび製造方法 |
JP4086535B2 (ja) | 2002-04-18 | 2008-05-14 | キヤノン株式会社 | アクチュエータ及びインクジェットヘッドの製造方法 |
JP4100953B2 (ja) | 2002-04-18 | 2008-06-11 | キヤノン株式会社 | Si基板上に単結晶酸化物導電体を有する積層体及びそれを用いたアクチュエーター及びインクジェットヘッドとその製造方法 |
JP4708667B2 (ja) | 2002-08-08 | 2011-06-22 | キヤノン株式会社 | アクチュエータおよび液体噴射ヘッド |
US7059711B2 (en) | 2003-02-07 | 2006-06-13 | Canon Kabushiki Kaisha | Dielectric film structure, piezoelectric actuator using dielectric element film structure and ink jet head |
US7215067B2 (en) | 2003-02-07 | 2007-05-08 | Canon Kabushiki Kaisha | Ferroelectric thin film element, piezoelectric actuator and liquid discharge head |
JP4717344B2 (ja) | 2003-12-10 | 2011-07-06 | キヤノン株式会社 | 誘電体薄膜素子、圧電アクチュエータおよび液体吐出ヘッド |
US7262544B2 (en) | 2004-01-09 | 2007-08-28 | Canon Kabushiki Kaisha | Dielectric element, piezoelectric element, ink jet head and method for producing the same head |
US7453188B2 (en) | 2004-02-27 | 2008-11-18 | Canon Kabushiki Kaisha | Dielectric element, piezoelectric element, ink jet head and ink jet recording apparatus and manufacturing method of same |
JP2005244133A (ja) | 2004-02-27 | 2005-09-08 | Canon Inc | 誘電体素子、圧電素子、インクジェットヘッド及びインクジェット記録装置、並びにこれらの製造方法 |
US7235917B2 (en) | 2004-08-10 | 2007-06-26 | Canon Kabushiki Kaisha | Piezoelectric member element and liquid discharge head comprising element thereof |
US8082640B2 (en) | 2004-08-31 | 2011-12-27 | Canon Kabushiki Kaisha | Method for manufacturing a ferroelectric member element structure |
JP2006069152A (ja) | 2004-09-06 | 2006-03-16 | Canon Inc | インクジェットヘッド及びその製造方法 |
-
2004
- 2004-01-30 US US10/532,020 patent/US7144101B2/en not_active Expired - Lifetime
- 2004-01-30 WO PCT/JP2004/000964 patent/WO2004068605A1/en active Application Filing
- 2004-01-30 EP EP04706820A patent/EP1588437B1/en not_active Expired - Lifetime
- 2004-01-30 CN CN200480003112A patent/CN100590902C/zh not_active Expired - Fee Related
- 2004-01-30 KR KR1020057014001A patent/KR100672883B1/ko active IP Right Grant
- 2004-01-30 AT AT04706820T patent/ATE537568T1/de active
-
2006
- 2006-07-24 US US11/491,027 patent/US7517063B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN100590902C (zh) | 2010-02-17 |
EP1588437B1 (en) | 2011-12-14 |
WO2004068605A1 (en) | 2004-08-12 |
US7144101B2 (en) | 2006-12-05 |
ATE537568T1 (de) | 2011-12-15 |
KR20050106405A (ko) | 2005-11-09 |
CN1745486A (zh) | 2006-03-08 |
EP1588437A4 (en) | 2010-03-24 |
US20060012648A1 (en) | 2006-01-19 |
US20060256167A1 (en) | 2006-11-16 |
EP1588437A1 (en) | 2005-10-26 |
US7517063B2 (en) | 2009-04-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100672883B1 (ko) | 압전 소자 | |
JP4717344B2 (ja) | 誘電体薄膜素子、圧電アクチュエータおよび液体吐出ヘッド | |
KR100978145B1 (ko) | 에피택셜 산화물막, 압전막, 압전막 소자, 압전막 소자를이용한 액체 토출 헤드 및 액체 토출 장치 | |
KR100875315B1 (ko) | 유전체 소자, 압전 소자, 잉크젯 헤드 및 잉크젯 헤드제조 방법 | |
KR100777468B1 (ko) | 유전체, 압전 부재, 잉크 제트 헤드, 잉크 제트 기록 장치 및 유전체의 제조 방법 | |
KR101113490B1 (ko) | 압전체, 압전체 소자, 및 압전체 소자를 이용한 액체 토출 헤드 및 액체 토출 장치 | |
KR100581257B1 (ko) | 압전소자, 잉크젯헤드, 각속도센서 및 이들의 제조방법,그리고 잉크젯방식 기록장치 | |
JP5127268B2 (ja) | 圧電体、圧電体素子、圧電体素子を用いた液体吐出ヘッド及び液体吐出装置 | |
JP2005175099A5 (ko) | ||
JP3828116B2 (ja) | 圧電体素子 | |
JP2004071933A (ja) | アクチュエータおよび液体噴射ヘッドならびに前記液体噴射ヘッドの製造方法 | |
US7999441B2 (en) | Piezoelectric actuator and liquid discharge head using the same | |
JP2005119166A (ja) | 圧電素子、インクジェットヘッド、及びこれらの製造方法、並びにインクジェット式記録装置 | |
JP4875827B2 (ja) | 圧電薄膜及びその製造方法、並びにその圧電薄膜を備えた圧電素子、並びにその圧電素子を用いたインクジェットヘッド、並びにそのインクジェットヘッドを備えたインクジェット式記録装置 | |
JP2007088445A (ja) | 圧電体、圧電素子、液体吐出ヘッド、液体吐出装置及び圧電体の製造方法 | |
JP2004237676A (ja) | インクジェットヘッド | |
JP2004071945A (ja) | アクチュエータおよび液体噴射ヘッド | |
JP2004128174A (ja) | アクチュエータおよび液体噴射ヘッド |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20121227 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20131218 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20141230 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20151217 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20161220 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20171219 Year of fee payment: 12 |
|
FPAY | Annual fee payment |
Payment date: 20190107 Year of fee payment: 13 |
|
FPAY | Annual fee payment |
Payment date: 20200107 Year of fee payment: 14 |