KR100748478B1 - 소요의 가스분위기를 형성하기 위한 방법 및 장치 - Google Patents
소요의 가스분위기를 형성하기 위한 방법 및 장치 Download PDFInfo
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- KR100748478B1 KR100748478B1 KR1020027008354A KR20027008354A KR100748478B1 KR 100748478 B1 KR100748478 B1 KR 100748478B1 KR 1020027008354 A KR1020027008354 A KR 1020027008354A KR 20027008354 A KR20027008354 A KR 20027008354A KR 100748478 B1 KR100748478 B1 KR 100748478B1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/205—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45593—Recirculation of reactive gases
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/405—Oxides of refractory metals or yttrium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4402—Reduction of impurities in the source gas
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
Abstract
Description
Claims (13)
- 가스를 도입하기 위한 가스도입구와 가스를 배출하기 위한 가스배출구를 구비한 케이싱과;상기 케이싱에 유체 연통되어 가스를 순환시키는 가스 순환관로와;상기 케이싱 내의 가스를 상기 가스 순환관로를 통하여 순환시키기 위한 순환팬과;상기 가스도입구 및 상기 가스배출구를 거쳐 상기 케이싱 내로의 가스도입 및 배출을 행하기 위한 위치와;상기 케이싱 내의 가스를 상기 가스 순환관로를 통하여 순환시키기 위한 위치와의 사이에서 전환 가능한 밸브를 가지고,상기 가스 순환관로에 설치되어, 상기 가스 순환관로를 통하는 가스 중의 수분이나 유기계 가스를 냉각 응축하여 상기 가스로부터 제거하기 위한 트랩이 설치되고,상기 가스 순환관로가 상기 가스도입구 및 가스배출구 사이에 접속되고,상기 전환 가능한 밸브가 상기 가스도입구 및 가스배출구에 각각 설치된 밸브로 이루어지고,상기 순환관로에 설치되어 상기 트랩으로 유입하는 가스와 유출하는 가스 사이에서 열교환을 행하기 위한 열교환기를 가지는 것을 특징으로 하는 소요의 가스분위기를 형성하기 위한 장치.
- 삭제
- 삭제
- 제 1항에 있어서,상기 순환되는 가스 중에 포함되는 입자를 제거하기 위한 입자제거필터나 케미컬필터를 구비하는 것을 특징으로 하는 소요의 가스분위기를 형성하기 위한 장치.
- 삭제
- 삭제
- 삭제
- 제 1항 또는 제 4항에 있어서,상기 케이싱 내에 설치되어 상기 케이싱 내를 통하는 가스의 흐름을 균일화하기 위한 가스흐름 균일화 기구를 구비하는 것을 특징으로 하는 소요의 가스분위기를 형성하기 위한 장치.
- 케이싱 내의 공간에 소요의 가스분위기를 형성하기 위한 방법으로서,상기 공간으로 가스를 도입함과 동시에 상기 가스를 상기 공간으로부터 배출하는 공정과;상기 공간의 내부가 상기 가스에 의하여 충만되었을 때에 상기 가스의 상기 도입 및 배출을 멈춤과 동시에, 상기 케이싱에 연통된 가스 순환로를 거쳐 상기 공간의 내부의 가스를 순환시키는 공정과;상기 순환로를 통하는 가스 중의 수분이나 유기계 가스를 냉각 응축하여 상기 가스로부터 제거하는 공정과,상기 순환되는 가스에 입자제거를 포함하는 소요의 처리를 행하는 공정과,상기 케이싱 내의 가스의 흐름을 균일화하는 공정을 가지고,순환로를 통하는 가스 중의 수분이나 유기계 가스를 냉각 응축하여 상기 가스로부터 제거하는 상기 공정의 전후에 있어서의 순환로를 통하는 냉각 전과 냉각 후의 가스 사이에서 열교환을 행하도록 한 것을 특징으로 하는 소요의 가스분위기를 형성하기 위한 방법.
- 삭제
- 삭제
- 제 9항에 있어서,상기 가스로서 불활성 가스를 사용하는 것을 특징으로 하는 소요의 가스분위기를 형성하기 위한 방법.
- 삭제
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2000-00000917 | 2000-01-06 | ||
JP2000000917A JP4246343B2 (ja) | 2000-01-06 | 2000-01-06 | ガス雰囲気形成装置及びガス雰囲気形成方法 |
Publications (2)
Publication Number | Publication Date |
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KR20020073490A KR20020073490A (ko) | 2002-09-26 |
KR100748478B1 true KR100748478B1 (ko) | 2007-08-10 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020027008354A KR100748478B1 (ko) | 2000-01-06 | 2000-12-21 | 소요의 가스분위기를 형성하기 위한 방법 및 장치 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6881268B2 (ko) |
EP (1) | EP1245896A1 (ko) |
JP (1) | JP4246343B2 (ko) |
KR (1) | KR100748478B1 (ko) |
TW (1) | TWM286991U (ko) |
WO (1) | WO2001050061A1 (ko) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3979135B2 (ja) * | 2002-03-20 | 2007-09-19 | セイコーエプソン株式会社 | チャンバ装置、これを備えた電気光学装置および有機el装置 |
CA2493502A1 (en) * | 2002-09-25 | 2004-04-22 | Taiyo Nippon Sanso Corporation | Apparatus and method for filling fuel |
CN102154628B (zh) * | 2004-08-02 | 2014-05-07 | 维高仪器股份有限公司 | 用于化学气相沉积反应器的多气体分配喷射器 |
WO2013001482A1 (en) | 2011-06-28 | 2013-01-03 | Dynamic Micro Systems | Semiconductor stocker systems and methods. |
KR102539338B1 (ko) * | 2017-09-14 | 2023-06-02 | 가부시키가이샤 세이부 기켄 | 가스 치환용 드라이룸 |
CN108980615A (zh) * | 2018-08-21 | 2018-12-11 | 中车南京浦镇车辆有限公司 | 一种模块化供氧系统 |
US20220223384A1 (en) * | 2021-01-14 | 2022-07-14 | Samsung Electronics Co., Ltd. | Apparatus for manufacturing a semiconductor device |
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US4690208A (en) * | 1986-02-03 | 1987-09-01 | Deck Brent D | Contaminated fluid heat exchanging |
JPH0266400A (ja) | 1988-09-01 | 1990-03-06 | Fujitsu Ltd | ガス交換装置 |
US5188672A (en) * | 1990-06-28 | 1993-02-23 | Applied Materials, Inc. | Reduction of particulate contaminants in chemical-vapor-deposition apparatus |
JPH07106406A (ja) * | 1991-01-29 | 1995-04-21 | Shinko Electric Co Ltd | ウエハ保管設備 |
JPH05308170A (ja) | 1992-04-30 | 1993-11-19 | Nec Corp | エキシマレーザガスの精製法 |
JP2807150B2 (ja) * | 1992-08-31 | 1998-10-08 | 松下電器産業株式会社 | 環境制御装置 |
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-
2000
- 2000-01-06 JP JP2000000917A patent/JP4246343B2/ja not_active Expired - Lifetime
- 2000-12-21 US US10/168,823 patent/US6881268B2/en not_active Expired - Lifetime
- 2000-12-21 KR KR1020027008354A patent/KR100748478B1/ko active IP Right Grant
- 2000-12-21 EP EP00985814A patent/EP1245896A1/en not_active Withdrawn
- 2000-12-21 WO PCT/JP2000/009091 patent/WO2001050061A1/ja active Application Filing
- 2000-12-30 TW TW094212407U patent/TWM286991U/zh not_active IP Right Cessation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0814389B2 (ja) * | 1990-09-03 | 1996-02-14 | 高砂熱学工業株式会社 | 直膨型熱交換器を用いたクリーンルーム |
KR970006728B1 (ko) * | 1992-08-31 | 1997-04-29 | 마쯔시다 덴기 산교 가부시끼가이샤 | 환경제어장치 |
Also Published As
Publication number | Publication date |
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KR20020073490A (ko) | 2002-09-26 |
EP1245896A1 (en) | 2002-10-02 |
JP4246343B2 (ja) | 2009-04-02 |
US6881268B2 (en) | 2005-04-19 |
TWM286991U (en) | 2006-02-01 |
US20030000470A1 (en) | 2003-01-02 |
WO2001050061A1 (fr) | 2001-07-12 |
JP2001193900A (ja) | 2001-07-17 |
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