Classifications

• • H01L21/205—
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45593—Recirculation of reactive gases
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
  • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
  • C23C16/40—Oxides
  • C23C16/405—Oxides of refractory metals or yttrium
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
  • C23C16/4402—Reduction of impurities in the source gas
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67011—Apparatus for manufacture or treatment
  • H01L21/67017—Apparatus for fluid treatment

Definitions

• the present invention relates to an apparatus and a method for filling a space surrounded by a housing or a casing with an inert gas or the like and creating a required gas atmosphere in the space.
• a large number of semiconductor wafers are placed in a casing, and a desired film is formed on the wafer surface by chemical vapor deposition. It is necessary to protect against oxidation due to oxygen and moisture contained in the atmosphere and to prevent formation of an oxide film.
• a dry inert gas G is introduced into the space 2 surrounded by the casing 1 from the gas inlet 3, and the particle removal filter (Hepa, Urpafil) is used.
• Hepa, Urpafil the particle removal filter
• the present invention has been made in view of the above points, and can fill a space surrounded by a casing with a required gas to create a required gas atmosphere, and can further reduce gas consumption. It is intended to provide an apparatus and a method.
• the present invention provides a casing provided with a gas inlet for introducing gas and a gas outlet for discharging gas, a gas circulation pipe communicating with the casing and circulating gas, Gas in the casing A circulation fan for circulating through the gas circulation pipe, a position for introducing and discharging gas into and from the casing through a gas inlet and a gas outlet, and the gas in the casing to the gas circulation pipe. And a valve switchable between a position for circulating the gas through the device and a device for forming a required gas atmosphere.
• gas is introduced into the casing through the gas inlet at the beginning of operation, and the introduced gas is exhausted through the gas outlet so that the gas is initially present in the casing. Exhausted air is discharged out of the casing and the casing is filled with gas.
• the valve is switched to circulate the gas in the casing through a gas circulation pipe. It is possible to perform necessary processing to maintain the state constant.
• the gas circulation pipe can be connected between the gas inlet and the gas outlet, and the valve is provided at each of the gas inlet and the gas outlet, and Such switching can be performed.
• the gas circulation pipeline may be provided with a filter for removing particles and the like contained in the circulated gas and a trap for cooling and condensing moisture and the like in the gas to remove the gas and the like from the gas. Further, a heat exchanger for exchanging heat between the gas flowing into the trap and the gas flowing out may be provided in the circulation pipeline.
• a gas flow equalizing mechanism for equalizing the flow of gas passing through the casing may be provided in the casing.
• the present invention also provides a method for forming a required gas atmosphere in a space in a casing, the method comprising the steps of introducing a gas into the space and discharging the gas from the space.
• the space is filled with the gas, the introduction and discharge of the gas are stopped, and the space is evacuated through a gas circulation path connected to the casing. Circulating gas in the space, and forming a required gas atmosphere in the space.
• a step for performing required processing such as particle removal can be added to the circulated gas. Further, a step of making the flow of gas in the casing uniform can be added.
• FIG. 1 is a view showing a conventional apparatus for forming a required gas atmosphere in a space surrounded by casing.
• FIG. 2 is a diagram showing an apparatus for forming a required gas atmosphere according to the present invention.
• FIG. 3 is a diagram showing a schematic configuration example of a trap used in the apparatus of FIG. 2, in which FIG. 3 (a) is a side sectional view, and FIG. 3 (b) is a sectional view taken along line A--A in FIG. 3 (a). You.
• the apparatus is a gas circulating apparatus for circulating gas through the casing 1 and the internal space 2 of the casing to create a required gas atmosphere in the internal space as described above.
• 20 is provided with a gas inlet 3 and a gas outlet 5 in the same manner as the above-described conventional apparatus.
• the casing internal space 2 is provided. Is set to an inert gas atmosphere such as nitrogen (N 2 ) gas or argon (Ar) gas.
• the gas circulation device has a gas circulation line 8 that is connected to the gas inlet 3 and the gas outlet 5 via the switching valves 6 and 7, and the switching valves 6 and 7 transfer the gas inside the casing 1. It is possible to switch between a position where the inert gas is supplied and discharged to the space 2 and a position where the supply and discharge are stopped and the gas in the casing internal space 2 is circulated through the circulation line 8.
• a circulation fan 11 is provided at the gas inlet 3, a filter 4 is provided downstream of the gas circulation fan 11, and a space 2 is provided downstream of the gas fan 4 in the space 2.
• a gas flow uniforming mechanism 12 is provided to make the inert gas flow uniformly.
• the gas circulation line 8 is provided with a heat exchanger 9 and a trap 10.
• the trap cools and inerts the inert gas G1 that passes through it, and condenses and removes moisture and organic gases (organic contaminants) contained in the gas.
• the inert gas G 2 from which moisture and organic gases have been removed is returned to the casing 1 through the filter 4.
• FIG. 3 is a view showing a schematic configuration example of the trap 10, FIG. 3 (a) is a side sectional view, and FIG. 3 (b) is an A-A sectional view of FIG. 3 (a).
• the trap 10 has a cold head 10-1 and a helium compressor 10-2.
• the cold head 10-1 is a cylindrical casing 10-1a, and a cylindrical condensate made of a material (metal material) with good heat conductivity provided concentrically inside the casing.
• Container 10-1b is a cold head 10-1 and a helium compressor 10-2.
• the cylindrical condenser 10-1 b is connected to a helium compressor 10-2 via a helium refrigerator 10-lc, and is connected to a helium gas at, for example, ⁇ 100 ° C. It is designed to be cooled to 200 ° C.
• the condenser has a number of fins extending in the radial direction, and the inert gas G1 flowing into the casing 10-1a of the cold head 10_1 is supplied to the condenser 10a. The water and organic gas contained therein are condensed and trapped on the surface.
• the bearing of the circulation fan 11 uses a magnetic bearing to prevent contamination of the inert gas by particles and organic materials, etc. Good to do.
• the switching valves 6 and 7 are turned on.
• the inert gas G is introduced into the casing from the gas inlet 3 and discharged through the gas outlet 5.
• the introduced inert gas G is made uniform through the circulation fan 11, the filter 4, and the gas flow equalizing mechanism 12, and is passed through the space 2 of the casing 1.
• the switching valves 6 and 7 are switched to the gas circulation position.
• the inert gas in the space 2 is supplied to the switching valve 7, the heat exchanger 9, the trap 10, the heat exchanger 9, the switching valve 6, the circulation fan 11, the filter 4, and the gas flow uniform mechanism 12.
• the gas passes through the space 2 as a uniform gas flow.
• the gas consumption can be greatly reduced as compared with the above-described conventional technology.
• this apparatus for example, as a batch type low-pressure CVD apparatus, a large number of semiconductor wafers are set in the casing space 2, and nitrogen gas or argon gas is introduced into the chamber and circulated. Thereby, the oxygen concentration and the water concentration in the space 2 can be extremely low, and the oxidation of the semiconductor wafer surface can be prevented. Since only a small amount of the inert gas to be replenished leaks from the casing 1, the running cost can be reduced.

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• Chemical & Material Sciences (AREA)
• Engineering & Computer Science (AREA)
• General Chemical & Material Sciences (AREA)
• Chemical Kinetics & Catalysis (AREA)
• Materials Engineering (AREA)
• Mechanical Engineering (AREA)
• Metallurgy (AREA)
• Organic Chemistry (AREA)
• Physics & Mathematics (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Manufacturing & Machinery (AREA)
• Computer Hardware Design (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Inorganic Chemistry (AREA)
• Pipeline Systems (AREA)
• Ventilation (AREA)
• Drying Of Gases (AREA)

Priority Applications (2)

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Publications (1)

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Citations (2)

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• 2000
  • 2000-01-06 JP JP2000000917A patent/JP4246343B2/ja not_active Expired - Lifetime
  • 2000-12-21 WO PCT/JP2000/009091 patent/WO2001050061A1/ja active Application Filing
  • 2000-12-21 US US10/168,823 patent/US6881268B2/en not_active Expired - Lifetime
  • 2000-12-21 KR KR1020027008354A patent/KR100748478B1/ko active IP Right Grant
  • 2000-12-21 EP EP00985814A patent/EP1245896A1/en not_active Withdrawn
  • 2000-12-30 TW TW094212407U patent/TWM286991U/zh not_active IP Right Cessation

Patent Citations (2)

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