TWM286991U - Apparatus for forming a required gaseous atmosphere - Google Patents

Apparatus for forming a required gaseous atmosphere Download PDF

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Publication number
TWM286991U
TWM286991U TW094212407U TW94212407U TWM286991U TW M286991 U TWM286991 U TW M286991U TW 094212407 U TW094212407 U TW 094212407U TW 94212407 U TW94212407 U TW 94212407U TW M286991 U TWM286991 U TW M286991U
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gas
outer casing
circulation line
forming
collector
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TW094212407U
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Setsuji Shinoda
Toshiharu Nakazawa
Nobuharu Noji
Shunichi Aiyoshizawa
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Ebara Corp
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Publication of TWM286991U publication Critical patent/TWM286991U/zh

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    • H01L21/205—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45593—Recirculation of reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4402—Reduction of impurities in the source gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Pipeline Systems (AREA)
  • Ventilation (AREA)
  • Drying Of Gases (AREA)

Description

M286991 八、新型說明： 【新型所屬之技術領域】 本創作係有關一種以惰性氣體等充滿在由外箱 (Housing)或者外殼（casing)所包圍之空間，並且於該空間 内製造所需要之氣體環境所用之裝置。 【先前技術】 例如分批式之低壓C V D裝置係在外殼内設置許多的半 導體晶圓’並利用化學蒸鍍法在該晶圓表面上形成所需要 之被肤，但必須保護該晶圓表面以免受到其周圍環境所含 有之氧或水分而氧化以致形成氧化膜。 :這樣的情況下，以往乃是如第i圖所 =體:從氣體導…導入由外殼1所包圍之空間2内 哭=粒子去除過濾器⑽以、_過遽器[贈 裔，I扑 Efficiency parti 愿 4去除顆私梦工+ Alr Filter之簡稱；|) 示顆拉寺而使空間2成為乾 如上述般預防_儿π + ) h注矾肢％彡兄。然後 出口5排出，藉此來防止内部氣體吏的一疋流置自排 蓋成本 系統因為會消耗大量的情性氣體而有生 【新型内容】 本創作係有鑑於上述之 供一種可將所 、”，，研創者，其目的係提 造所需要之氣體 卜叙所包圍之空間以製 亦即，本創作提供—種用以之裝置。 形成所需要之氣體環境之 312] 84 (修正版) M286991 裝置，其特徵係具備：設有用以導入氣體之氣體導入口和 用以排出氣體之氣體排出口之外殼；連通於該外殼而使氣 體循環之氣體循環管路；使外殼内之氣體通過氣體循環管 路而使其循環之循環風扇；以及可在經由氣體導入口及氣 體排出口以進行外殼内之氣體導入及排出之位置，和使外 殼内之氣體通過上述氣體循環管路而使其循環之位置之間 進行切換的閥。 I 該裝置係在操作之初期階段，藉由一邊將氣體從氣體 導入口導入外殼内，一邊使導入之氣體通過氣體排出口而 予以排出，以使外殼内最初存在之空氣等排出到外殼外面 直到外殼内充滿氣體。外殼内由導入之氣體充滿時即切換 閥，以使外殼内之氣體通過氣體循環管路而使其循環，且 在該循環中可進行去除該氣體之水分等，使氣體維持怪定 狀態所需要之處理。 具體而言，上述氣體循環管路可連接於上述氣體導入 鲁口及氣體排出口之間，且可將上述閥分別設置於上述氣體 導入口及氣體排出口，以如同上述進行切換。 在氣體循環管路可設置用以去除循環氣體中所含有之 粒子等之過濾器，或冷卻凝結氣體中之水分等然後從該氣 體予以去除之收集器。甚而在上述循環管路亦可設置在流 入上述收集器之氣體與流出之氣體之間進行熱交換之熱交 換器。 此外，上述外殼内亦可設置使通過該外殼内之氣流均 勻化之氣流均勻化機構。 3]2]84(修正版) M286991 【實施方式】 以下根據圖面說明本創作之實施形態。 如第2圖所示，有關本創作之装置係如上所述，具 有使氣體通過外殼i和該外殼之内部空間2而使其循環， 以於该内部空間内形成所需要气 战所而要之乳體裱境所用之氣體循環 装置。 外殼1具備和前述以往裝置相同的氣體導人口 3 >體排出口 5。本實施形態之裝置係如在⑽裝置中， =内部空間2係形成氮氣㈤或氬氣⑹等之惰性氣體環 氣體循環裝置乃具有經由切換 體導入口3及氣辦魁山,々 向連逋於上述虱 7可孫，麵+且 口 5之軋體循環管路8，切換閥6、 的位^^ 性氣體供給/排出至外殼1之内部空間2 循…广止供給/排出而使外殼内部空間2之氣體通過 官路8以使其循環之位置之間進行切換。 之下= 氣體循環風扇" 内使㈣體：===有 ==環管路δ設有熱交換器9及收集器』。收集 中所過内部之惰性氣體G1冷卻，以凝結捕捉氣體 已除去水八^有機系氣體（有機系污染）並予以去除。 而回到外^ 氣體之惰性氣以2即通過過遽器4 3】2IS4(修正版) M286991 熱交換器9係於導入收集器1 0之惰性氣體G1和出自 收集器之惰性氣體G 2之間進行熱交換，以使回到外殼之惰 性氣體G2之溫度維持在所需要之溫度以上。 第3圖為收集器1 〇之概略結構圖，而第3圖（a)為側 剖視圖’第3圖（b)為第3圖（a)之A-A剖視圖。如圖面所 示，收集器10具有冷頭（Cold head) 10-1和氦壓縮機 10一2。而冷頭W — l具有圓筒狀外殼10-la和該外殼内設成 同心圓狀且由熱傳導性良好的材料（金屬材料）所組成之圓 筒狀冷凝器ΙΟ-lb。圓筒狀冷凝器1〇 — 113係經由氦冷凍機 。1〇-lc連接於氦壓縮機10 —2,並且由氦氣冷卻成例如-1〇〇 C至-200°C。該冷凝器具有延伸於半徑方向的許多葉片 ain)，流入冷頭iOH之外殼1〇_la内之惰性氣體G1'係由 該冷凝器冷卻，使其中所含有之水分及有機減體凝結於 冷凝器的表面上而可加以捕捉。 / 0此外為了防止因粒子或有機系材料污染惰性氣體， 循環風扇11的軸承係使用磁性軸承，而將磁性軸承部及馬 達部形成密封構造則更佳。 使用有關本創作之获番士 ,,. w 褒置日t f先以切換閥6及7為非 循環位置，將惰性U姊Γ + 士土社、、月r虱驵G由氣體導入口 3導入外殼内，同 % k 通過氣體排出口 5而w M山 、 四 而义排出0導入之惰性氣體G乃 通過循壞風扇11、過_哭 ^尸士 巧°口 4及氣流均句化機構12成為均 勻軋而通到外殼1之空間2内。 在空間2内充滿惰性氣體G，且已去除氧氣、水分之 狀·%下’將切換闊6、7切換至氣體循環位置。由此，空間 312184(修正版) 9 M286991 :::惰性氣體乃通過切換間7、熱交
熱父換器、切拖問Γ μ设_ 认本口口 1 U 勻化機構1? “伐、“風扇11、過濾器4以及氣流均 成為均勾氣流而通到空間2内。 [產業上之可利用性] 衫⑽可如前述，比以往技術更大幅地降低氣 :=二Γ此裝置作為分批心 導入氣'戈二間2内设置許多半導體晶圓，並於該室内 :水使其猶環，藉此可使空間2内之氧濃度 :=抑制到非常低而可防止半導體晶圓表面氧化。 由於要補充之惰性氣體的量只需補 即可’所以生產成本即降低。 又1外漏之" 【圖式簡單說明】 圖為用以在由外殼包圍之空間形成所需要之氣體 衣i兄之以往裝置圖。 裳置^圖為有關本創作之用以形成所需要之氣體環境之 第 圖，第 剖視圖 3圖為在第2圖之裝置所使用之收集 3圖（a)為側剖視圖，第3圖（匕）為第
器之概略結構 3 圖（a)之 A-A 【主要元件符號說明】 外殼 2 氣體導入口 4 氣體排出口 6 氣體循環管路 9 空間 (粒子去除）過濾器 切換閥 熱交換器 3]2〗84(修正版） 10 M286991 10 收集器 10 -1 冷頭 1 0 -1 a 圓筒狀外殼 10 - lb 冷凝器 10 - lc 氦冷凍機 10-2 Ιι壓縮機 11 循環風扇 12 氣流均勻化機構 20 氣體循環裝置 G ^ Gl > G2 惰性氣體 η 312]84(修正版)

Claims (1)

  1. M286991 九、申請專利範圍： 1. 一種用以形成所需要之氣體環境之裝置，係具備： 外殼，設有用以導入氣體之氣體導入口和用以排 出氣體之氣體排出口； 氣體循環管路，連通於該外殼而使氣體循環； 循環風扇’使外殼内之氣體通過氣體循環管路而 進行循環； 闊，可在經由氣體導入口及氣體排出口以進行外 • 殼内之氣體導入及排出之位置和使外殼内之氣體通 - 過上述氣體循環管路而循環之位置之間切換； _ 收集器，設於上述氣體循環管路，使通過該氣體 循環管路之氣體中之水分等冷卻凝結而從該氣體予 以除去；及 熱交換器，設置於上述氣體循環管路，且在流入 上述收集器之氣體與流出之氣體之間進行熱交換， 而前述收集器係具備藉由預定之冷媒而施行冷 鲁卻之凝結器。 2. 如申請專利範圍第1項之用以形成所需要之氣體環境 之裝置，其中，上述氣體循環管路係連接於上述氣體 導入口與氣體排出口之間。 3. 如申請專利範圍第2項之用以形成所需要之氣體環境 之裝置，其中，上述可切換的閥係由分別設置於上述 氣體導入口及氣體排出口之閥所組成。 4. 如申請專利範圍第1項至第3項任一項之用以形成所 需要之氣體環境之裝置，其中，具備用以除去循環氣 3]2]8·4(修正版) M286991 體中所含有之粒子等之粒子去除過濾器或化學過濾 5.如申請專利範圍第4項之用以形成所需要之氣體環境 之裝置，其中，具有設置於上述外殼内，使通過該外 殼内之氣流均勻化之氣流均句化機構。
    13 3] 2184(修正版)
TW094212407U 2000-01-06 2000-12-30 Apparatus for forming a required gaseous atmosphere TWM286991U (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000000917A JP4246343B2 (ja) 2000-01-06 2000-01-06 ガス雰囲気形成装置及びガス雰囲気形成方法

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US (1) US6881268B2 (zh)
EP (1) EP1245896A1 (zh)
JP (1) JP4246343B2 (zh)
KR (1) KR100748478B1 (zh)
TW (1) TWM286991U (zh)
WO (1) WO2001050061A1 (zh)

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US10090179B2 (en) 2011-06-28 2018-10-02 Brooks Automation, Inc. Semiconductor stocker systems and methods
US10453722B2 (en) 2011-06-28 2019-10-22 Brooks Automation (Germany) Gmbh Semiconductor stocker systems and methods
US10872796B2 (en) 2011-06-28 2020-12-22 Brooks Automation (Germany) Gmbh Semiconductor stocker systems and methods
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US6881268B2 (en) 2005-04-19
KR100748478B1 (ko) 2007-08-10
KR20020073490A (ko) 2002-09-26
JP4246343B2 (ja) 2009-04-02
JP2001193900A (ja) 2001-07-17
WO2001050061A1 (fr) 2001-07-12
US20030000470A1 (en) 2003-01-02
EP1245896A1 (en) 2002-10-02

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