KR100731851B1 - 구리를 기본으로 한 본드패드에 종래의 와이어를 결합시킬 수 있는 방법 - Google Patents
구리를 기본으로 한 본드패드에 종래의 와이어를 결합시킬 수 있는 방법 Download PDFInfo
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- KR100731851B1 KR100731851B1 KR1020017012365A KR20017012365A KR100731851B1 KR 100731851 B1 KR100731851 B1 KR 100731851B1 KR 1020017012365 A KR1020017012365 A KR 1020017012365A KR 20017012365 A KR20017012365 A KR 20017012365A KR 100731851 B1 KR100731851 B1 KR 100731851B1
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/8501—Cleaning, e.g. oxide removal step, desmearing
- H01L2224/85011—Chemical cleaning, e.g. etching, flux
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
-
- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85203—Thermocompression bonding
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
- H01L2224/85207—Thermosonic bonding
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8536—Bonding interfaces of the semiconductor or solid state body
- H01L2224/85375—Bonding interfaces of the semiconductor or solid state body having an external coating, e.g. protective bond-through coating
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- H—ELECTRICITY
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L2924/01—Chemical elements
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- H01L2924/01—Chemical elements
- H01L2924/01057—Lanthanum [La]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
-
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Wire Bonding (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/282,596 US6358847B1 (en) | 1999-03-31 | 1999-03-31 | Method for enabling conventional wire bonding to copper-based bond pad features |
| US09/282,596 | 1999-03-31 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020077000028A Division KR100731850B1 (ko) | 1999-03-31 | 2000-03-06 | 구리를 기본으로 한 본드패드에 종래의 와이어를 결합시킬수 있는 방법 및 이를 위한 장치 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20010108419A KR20010108419A (ko) | 2001-12-07 |
| KR100731851B1 true KR100731851B1 (ko) | 2007-06-25 |
Family
ID=23082214
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020077000028A Expired - Fee Related KR100731850B1 (ko) | 1999-03-31 | 2000-03-06 | 구리를 기본으로 한 본드패드에 종래의 와이어를 결합시킬수 있는 방법 및 이를 위한 장치 |
| KR1020017012365A Expired - Fee Related KR100731851B1 (ko) | 1999-03-31 | 2000-03-06 | 구리를 기본으로 한 본드패드에 종래의 와이어를 결합시킬 수 있는 방법 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020077000028A Expired - Fee Related KR100731850B1 (ko) | 1999-03-31 | 2000-03-06 | 구리를 기본으로 한 본드패드에 종래의 와이어를 결합시킬수 있는 방법 및 이를 위한 장치 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US6358847B1 (enExample) |
| EP (1) | EP1186022A2 (enExample) |
| JP (1) | JP2002540631A (enExample) |
| KR (2) | KR100731850B1 (enExample) |
| AU (1) | AU3867700A (enExample) |
| TW (1) | TW454281B (enExample) |
| WO (1) | WO2000059029A2 (enExample) |
Families Citing this family (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002527886A (ja) * | 1998-10-05 | 2002-08-27 | キューリック、アンド、ソファー、インベストメンツ、インコーポレーテッド | 半導体の銅ボンドパッドの表面保護 |
| US6191023B1 (en) * | 1999-11-18 | 2001-02-20 | Taiwan Semiconductor Manufacturing Company | Method of improving copper pad adhesion |
| US6432826B1 (en) * | 1999-11-29 | 2002-08-13 | Applied Materials, Inc. | Planarized Cu cleaning for reduced defects |
| US6790757B1 (en) | 1999-12-20 | 2004-09-14 | Agere Systems Inc. | Wire bonding method for copper interconnects in semiconductor devices |
| US7351353B1 (en) * | 2000-01-07 | 2008-04-01 | Electrochemicals, Inc. | Method for roughening copper surfaces for bonding to substrates |
| US7220322B1 (en) | 2000-08-24 | 2007-05-22 | Applied Materials, Inc. | Cu CMP polishing pad cleaning |
| DE10064691A1 (de) * | 2000-12-22 | 2002-07-04 | Infineon Technologies Ag | Elektronisches Bauteil mit einem Halbleiter-Chip und Kupferleiterbahnen auf dem Chip sowie ein Verfahren zu seiner Herstellung |
| US6693020B2 (en) * | 2001-03-12 | 2004-02-17 | Motorola, Inc. | Method of preparing copper metallization die for wirebonding |
| US6783432B2 (en) | 2001-06-04 | 2004-08-31 | Applied Materials Inc. | Additives for pressure sensitive polishing compositions |
| TW583348B (en) * | 2001-06-19 | 2004-04-11 | Phoenix Prec Technology Corp | A method for electroplating Ni/Au layer substrate without using electroplating wire |
| JP3761461B2 (ja) | 2001-12-13 | 2006-03-29 | Necエレクトロニクス株式会社 | 半導体装置の製造方法 |
| TWI221026B (en) * | 2002-12-06 | 2004-09-11 | Nat Univ Chung Cheng | Method of thermosonic wire bonding process for copper connection in a chip |
| MY134318A (en) * | 2003-04-02 | 2007-12-31 | Freescale Semiconductor Inc | Integrated circuit die having a copper contact and method therefor |
| US6881437B2 (en) * | 2003-06-16 | 2005-04-19 | Blue29 Llc | Methods and system for processing a microelectronic topography |
| US6969638B2 (en) * | 2003-06-27 | 2005-11-29 | Texas Instruments Incorporated | Low cost substrate for an integrated circuit device with bondpads free of plated gold |
| US7919864B2 (en) * | 2003-10-13 | 2011-04-05 | Stmicroelectronics S.A. | Forming of the last metallization level of an integrated circuit |
| US7105379B2 (en) * | 2004-04-28 | 2006-09-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Implementation of protection layer for bond pad protection |
| US7210988B2 (en) | 2004-08-24 | 2007-05-01 | Applied Materials, Inc. | Method and apparatus for reduced wear polishing pad conditioning |
| JP4035733B2 (ja) * | 2005-01-19 | 2008-01-23 | セイコーエプソン株式会社 | 半導体装置の製造方法及び電気的接続部の処理方法 |
| DE102005033469B4 (de) * | 2005-07-18 | 2019-05-09 | Infineon Technologies Ag | Verfahren zum Herstellen eines Halbleitermoduls |
| DE102005034485B4 (de) * | 2005-07-20 | 2013-08-29 | Infineon Technologies Ag | Verbindungselement für ein Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterleistungsbauelements |
| WO2007094869A2 (en) | 2005-10-31 | 2007-08-23 | Applied Materials, Inc. | Electrochemical method for ecmp polishing pad conditioning |
| DE102006044691B4 (de) * | 2006-09-22 | 2012-06-21 | Infineon Technologies Ag | Verfahren zum Herstellen einer Anschlussleitstruktur eines Bauelements |
| SG163530A1 (en) * | 2006-12-29 | 2010-08-30 | United Test & Assembly Ct Lt | Copper wire bonding on organic solderability preservative materials |
| TWI508248B (zh) * | 2008-06-20 | 2015-11-11 | 聯合科技(股份有限)公司 | 有機保焊之互連上之銅及加強之打線接合製程 |
| TWI452640B (zh) * | 2009-02-09 | 2014-09-11 | 日月光半導體製造股份有限公司 | 半導體封裝構造及其封裝方法 |
| DE102009029577B3 (de) * | 2009-09-18 | 2011-04-28 | Infineon Technologies Ag | Verfahren zur Herstellung eines hochtemperaturfesten Leistungshalbleitermoduls |
| US9142533B2 (en) | 2010-05-20 | 2015-09-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Substrate interconnections having different sizes |
| CN103620753B (zh) * | 2011-04-25 | 2017-05-24 | 气体产品与化学公司 | 清洁引线框以改善导线接合工艺 |
| US9646923B2 (en) | 2012-04-17 | 2017-05-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor devices, methods of manufacture thereof, and packaged semiconductor devices |
| US9425136B2 (en) | 2012-04-17 | 2016-08-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Conical-shaped or tier-shaped pillar connections |
| US9299674B2 (en) | 2012-04-18 | 2016-03-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bump-on-trace interconnect |
| WO2014026034A1 (en) * | 2012-08-08 | 2014-02-13 | Marvell World Trade Ltd. | Methods of making packages using thin cu foil supported by carrier cu foil |
| US9111817B2 (en) | 2012-09-18 | 2015-08-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bump structure and method of forming same |
| US9012263B1 (en) * | 2013-10-31 | 2015-04-21 | Freescale Semiconductor, Inc. | Method for treating a bond pad of a package substrate |
| JP6937283B2 (ja) * | 2018-09-19 | 2021-09-22 | 株式会社東芝 | 半導体装置の製造方法 |
| US11682641B2 (en) | 2020-08-13 | 2023-06-20 | Microchip Technology Incorporated | Integrated circuit bond pad with multi-material toothed structure |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1993010277A1 (en) * | 1991-11-20 | 1993-05-27 | Electrochemicals, Inc. | Improved method for bonding copper to a polymeric material |
| EP0878831A2 (en) * | 1997-05-15 | 1998-11-18 | Kabushiki Kaisha Toshiba | Double side cleaning apparatus for semiconductor substrate |
| US5858109A (en) * | 1995-10-13 | 1999-01-12 | Ontrak Systems, Inc. | Method and apparatus for cleaning of semiconductor substrates using standard clean 1 (SC1) |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS531654A (en) | 1976-06-28 | 1978-01-09 | Furukawa Electric Co Ltd | Method of preventing oxidation of copper member |
| US4370173A (en) | 1981-05-15 | 1983-01-25 | Amchem Products, Inc. | Composition and method for acid cleaning of aluminum surfaces |
| US4871422A (en) | 1987-01-27 | 1989-10-03 | Olin Corporation | Etching solutions containing ammonium fluoride and anionic sulfate esters of alkylphenol polyglycidol ethers and method of etching |
| JPH02130922A (ja) | 1988-11-11 | 1990-05-18 | Toshiba Corp | 半導体基板エッチング装置 |
| DE3939661A1 (de) | 1989-11-30 | 1991-06-13 | Wacker Chemitronic | Verfahren zur steuerung des einbaues von kupfer in siliciumscheiben beim chemomechanischen polieren |
| WO1994027314A1 (en) | 1993-05-13 | 1994-11-24 | Interuniversitair Microelektronica Centrum | Method for semiconductor processing using mixtures of hf and carboxylic acid |
| JPH07147300A (ja) | 1993-11-24 | 1995-06-06 | Hitachi Ltd | インナーリードボンディング装置 |
| JPH08250635A (ja) * | 1995-03-14 | 1996-09-27 | Dainippon Printing Co Ltd | リードフレームの製造方法 |
| FR2722511B1 (fr) | 1994-07-15 | 1999-04-02 | Ontrak Systems Inc | Procede pour enlever les metaux dans un dispositif de recurage |
| DE4444388A1 (de) | 1994-11-28 | 1996-05-30 | Atotech Deutschland Gmbh | Verfahren zum Bonden von Drähten auf oxidationsempfindlichen, lötbaren Metallsubstraten |
| JPH08195369A (ja) | 1995-01-13 | 1996-07-30 | Daikin Ind Ltd | 基板の洗浄方法 |
| US5662769A (en) | 1995-02-21 | 1997-09-02 | Advanced Micro Devices, Inc. | Chemical solutions for removing metal-compound contaminants from wafers after CMP and the method of wafer cleaning |
| US5714203A (en) | 1995-08-23 | 1998-02-03 | Ictop Entwicklungs Gmbh | Procedure for the drying of silicon |
| WO1997018582A1 (en) | 1995-11-15 | 1997-05-22 | Daikin Industries, Ltd. | Wafer-cleaning solution and process for the production thereof |
| US5700383A (en) | 1995-12-21 | 1997-12-23 | Intel Corporation | Slurries and methods for chemical mechanical polish of aluminum and titanium aluminide |
| US5810938A (en) | 1996-05-24 | 1998-09-22 | Henkel Corporation | Metal brightening composition and process that do not damage glass |
| TW416987B (en) | 1996-06-05 | 2001-01-01 | Wako Pure Chem Ind Ltd | A composition for cleaning the semiconductor substrate surface |
| JPH1041298A (ja) * | 1996-07-23 | 1998-02-13 | Toshiba Corp | 半導体装置及びその製造方法 |
| US5709755A (en) | 1996-08-09 | 1998-01-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for CMP cleaning improvement |
| US5794299A (en) | 1996-08-29 | 1998-08-18 | Ontrak Systems, Inc. | Containment apparatus |
| US6296714B1 (en) | 1997-01-16 | 2001-10-02 | Mitsubishi Materials Silicon Corporation | Washing solution of semiconductor substrate and washing method using the same |
| JPH113892A (ja) * | 1997-06-11 | 1999-01-06 | Ricoh Co Ltd | 半導体装置の製造方法 |
| US5935871A (en) * | 1997-08-22 | 1999-08-10 | Motorola, Inc. | Process for forming a semiconductor device |
| US6096652A (en) * | 1997-11-03 | 2000-08-01 | Motorola, Inc. | Method of chemical mechanical planarization using copper coordinating ligands |
| US6051879A (en) * | 1997-12-16 | 2000-04-18 | Micron Technology, Inc. | Electrical interconnection for attachment to a substrate |
-
1999
- 1999-03-31 US US09/282,596 patent/US6358847B1/en not_active Expired - Lifetime
-
2000
- 2000-03-06 AU AU38677/00A patent/AU3867700A/en not_active Abandoned
- 2000-03-06 EP EP00917749A patent/EP1186022A2/en not_active Withdrawn
- 2000-03-06 JP JP2000608434A patent/JP2002540631A/ja active Pending
- 2000-03-06 KR KR1020077000028A patent/KR100731850B1/ko not_active Expired - Fee Related
- 2000-03-06 KR KR1020017012365A patent/KR100731851B1/ko not_active Expired - Fee Related
- 2000-03-06 WO PCT/US2000/005787 patent/WO2000059029A2/en not_active Ceased
- 2000-03-31 TW TW89106196A patent/TW454281B/zh not_active IP Right Cessation
-
2002
- 2002-01-04 US US10/038,980 patent/US6610601B2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1993010277A1 (en) * | 1991-11-20 | 1993-05-27 | Electrochemicals, Inc. | Improved method for bonding copper to a polymeric material |
| US5858109A (en) * | 1995-10-13 | 1999-01-12 | Ontrak Systems, Inc. | Method and apparatus for cleaning of semiconductor substrates using standard clean 1 (SC1) |
| EP0878831A2 (en) * | 1997-05-15 | 1998-11-18 | Kabushiki Kaisha Toshiba | Double side cleaning apparatus for semiconductor substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| US20020058417A1 (en) | 2002-05-16 |
| JP2002540631A (ja) | 2002-11-26 |
| WO2000059029A2 (en) | 2000-10-05 |
| US6610601B2 (en) | 2003-08-26 |
| US6358847B1 (en) | 2002-03-19 |
| TW454281B (en) | 2001-09-11 |
| EP1186022A2 (en) | 2002-03-13 |
| AU3867700A (en) | 2000-10-16 |
| KR20010108419A (ko) | 2001-12-07 |
| KR100731850B1 (ko) | 2007-06-25 |
| WO2000059029A3 (en) | 2001-02-15 |
| KR20070010211A (ko) | 2007-01-22 |
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