AU3867700A - Method and apparatus for enabling conventional wire bonding to copper-based bondpad features - Google Patents

Method and apparatus for enabling conventional wire bonding to copper-based bondpad features

Info

Publication number
AU3867700A
AU3867700A AU38677/00A AU3867700A AU3867700A AU 3867700 A AU3867700 A AU 3867700A AU 38677/00 A AU38677/00 A AU 38677/00A AU 3867700 A AU3867700 A AU 3867700A AU 3867700 A AU3867700 A AU 3867700A
Authority
AU
Australia
Prior art keywords
bondpad
copper
features
wire bonding
conventional wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU38677/00A
Other languages
English (en)
Inventor
Diane J. Hymes
Hugh Li
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of AU3867700A publication Critical patent/AU3867700A/en
Abandoned legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B1/00—Cleaning by methods involving the use of tools
    • B08B1/30—Cleaning by methods involving the use of tools by movement of cleaning members over a surface
    • B08B1/32—Cleaning by methods involving the use of tools by movement of cleaning members over a surface using rotary cleaning members
    • B08B1/34—Cleaning by methods involving the use of tools by movement of cleaning members over a surface using rotary cleaning members rotating about an axis parallel to the surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H10W72/01571—Cleaning, e.g. oxide removal or de-smearing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H10W72/01971—Cleaning, e.g. oxide removal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H10W72/07118—Means for cleaning, e.g. brushes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H10W72/07141—Means for applying energy, e.g. ovens or lasers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07511—Treating the bonding area before connecting, e.g. by applying flux or cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07521—Aligning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H10W72/07533—Ultrasonic bonding, e.g. thermosonic bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
AU38677/00A 1999-03-31 2000-03-06 Method and apparatus for enabling conventional wire bonding to copper-based bondpad features Abandoned AU3867700A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09282596 1999-03-31
US09/282,596 US6358847B1 (en) 1999-03-31 1999-03-31 Method for enabling conventional wire bonding to copper-based bond pad features
PCT/US2000/005787 WO2000059029A2 (en) 1999-03-31 2000-03-06 Method and apparatus for enabling conventional wire bonding to copper-based bond pad features

Publications (1)

Publication Number Publication Date
AU3867700A true AU3867700A (en) 2000-10-16

Family

ID=23082214

Family Applications (1)

Application Number Title Priority Date Filing Date
AU38677/00A Abandoned AU3867700A (en) 1999-03-31 2000-03-06 Method and apparatus for enabling conventional wire bonding to copper-based bondpad features

Country Status (7)

Country Link
US (2) US6358847B1 (enExample)
EP (1) EP1186022A2 (enExample)
JP (1) JP2002540631A (enExample)
KR (2) KR100731850B1 (enExample)
AU (1) AU3867700A (enExample)
TW (1) TW454281B (enExample)
WO (1) WO2000059029A2 (enExample)

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US6191023B1 (en) * 1999-11-18 2001-02-20 Taiwan Semiconductor Manufacturing Company Method of improving copper pad adhesion
US6432826B1 (en) 1999-11-29 2002-08-13 Applied Materials, Inc. Planarized Cu cleaning for reduced defects
US6790757B1 (en) * 1999-12-20 2004-09-14 Agere Systems Inc. Wire bonding method for copper interconnects in semiconductor devices
US7351353B1 (en) * 2000-01-07 2008-04-01 Electrochemicals, Inc. Method for roughening copper surfaces for bonding to substrates
US7220322B1 (en) 2000-08-24 2007-05-22 Applied Materials, Inc. Cu CMP polishing pad cleaning
DE10064691A1 (de) * 2000-12-22 2002-07-04 Infineon Technologies Ag Elektronisches Bauteil mit einem Halbleiter-Chip und Kupferleiterbahnen auf dem Chip sowie ein Verfahren zu seiner Herstellung
US6693020B2 (en) * 2001-03-12 2004-02-17 Motorola, Inc. Method of preparing copper metallization die for wirebonding
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JP3761461B2 (ja) * 2001-12-13 2006-03-29 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
TWI221026B (en) * 2002-12-06 2004-09-11 Nat Univ Chung Cheng Method of thermosonic wire bonding process for copper connection in a chip
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US6881437B2 (en) * 2003-06-16 2005-04-19 Blue29 Llc Methods and system for processing a microelectronic topography
US6969638B2 (en) * 2003-06-27 2005-11-29 Texas Instruments Incorporated Low cost substrate for an integrated circuit device with bondpads free of plated gold
US7919864B2 (en) * 2003-10-13 2011-04-05 Stmicroelectronics S.A. Forming of the last metallization level of an integrated circuit
US7105379B2 (en) * 2004-04-28 2006-09-12 Taiwan Semiconductor Manufacturing Co., Ltd. Implementation of protection layer for bond pad protection
US7210988B2 (en) 2004-08-24 2007-05-01 Applied Materials, Inc. Method and apparatus for reduced wear polishing pad conditioning
JP4035733B2 (ja) * 2005-01-19 2008-01-23 セイコーエプソン株式会社 半導体装置の製造方法及び電気的接続部の処理方法
DE102005033469B4 (de) * 2005-07-18 2019-05-09 Infineon Technologies Ag Verfahren zum Herstellen eines Halbleitermoduls
DE102005034485B4 (de) * 2005-07-20 2013-08-29 Infineon Technologies Ag Verbindungselement für ein Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterleistungsbauelements
WO2007094869A2 (en) 2005-10-31 2007-08-23 Applied Materials, Inc. Electrochemical method for ecmp polishing pad conditioning
DE102006044691B4 (de) 2006-09-22 2012-06-21 Infineon Technologies Ag Verfahren zum Herstellen einer Anschlussleitstruktur eines Bauelements
SG144124A1 (en) * 2006-12-29 2008-07-29 United Test & Assembly Ct Ltd Copper wire bonding on organic solderability preservative materials
SG158048A1 (en) * 2008-06-20 2010-01-29 United Test & Assembly Ct Ltd Copper on organic solderability preservative (osp) interconnect and enhanced wire bonding process
TWI452640B (zh) * 2009-02-09 2014-09-11 日月光半導體製造股份有限公司 半導體封裝構造及其封裝方法
DE102009029577B3 (de) * 2009-09-18 2011-04-28 Infineon Technologies Ag Verfahren zur Herstellung eines hochtemperaturfesten Leistungshalbleitermoduls
US9142533B2 (en) 2010-05-20 2015-09-22 Taiwan Semiconductor Manufacturing Company, Ltd. Substrate interconnections having different sizes
CN103620753B (zh) * 2011-04-25 2017-05-24 气体产品与化学公司 清洁引线框以改善导线接合工艺
US9646923B2 (en) 2012-04-17 2017-05-09 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices, methods of manufacture thereof, and packaged semiconductor devices
US9425136B2 (en) 2012-04-17 2016-08-23 Taiwan Semiconductor Manufacturing Company, Ltd. Conical-shaped or tier-shaped pillar connections
US9299674B2 (en) 2012-04-18 2016-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. Bump-on-trace interconnect
CN104756239B (zh) * 2012-08-08 2018-01-26 马维尔国际贸易有限公司 使用由载体铜箔支撑的薄铜箔制作封装体的方法
US9111817B2 (en) 2012-09-18 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Bump structure and method of forming same
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JP6937283B2 (ja) * 2018-09-19 2021-09-22 株式会社東芝 半導体装置の製造方法
US11682641B2 (en) 2020-08-13 2023-06-20 Microchip Technology Incorporated Integrated circuit bond pad with multi-material toothed structure

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Also Published As

Publication number Publication date
WO2000059029A3 (en) 2001-02-15
US6610601B2 (en) 2003-08-26
US20020058417A1 (en) 2002-05-16
JP2002540631A (ja) 2002-11-26
EP1186022A2 (en) 2002-03-13
KR20070010211A (ko) 2007-01-22
KR100731850B1 (ko) 2007-06-25
KR100731851B1 (ko) 2007-06-25
KR20010108419A (ko) 2001-12-07
WO2000059029A2 (en) 2000-10-05
TW454281B (en) 2001-09-11
US6358847B1 (en) 2002-03-19

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