JP2002540631A - 銅を用いたボンディングパッド構造に対する従来型のワイヤボンディングの適用を可能にする方法および装置 - Google Patents
銅を用いたボンディングパッド構造に対する従来型のワイヤボンディングの適用を可能にする方法および装置Info
- Publication number
- JP2002540631A JP2002540631A JP2000608434A JP2000608434A JP2002540631A JP 2002540631 A JP2002540631 A JP 2002540631A JP 2000608434 A JP2000608434 A JP 2000608434A JP 2000608434 A JP2000608434 A JP 2000608434A JP 2002540631 A JP2002540631 A JP 2002540631A
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- Japan
- Prior art keywords
- brush
- wafer
- layer
- passivation layer
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
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- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/8501—Cleaning, e.g. oxide removal step, desmearing
- H01L2224/85011—Chemical cleaning, e.g. etching, flux
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85203—Thermocompression bonding
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- H—ELECTRICITY
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- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
- H01L2224/85207—Thermosonic bonding
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- H—ELECTRICITY
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- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8536—Bonding interfaces of the semiconductor or solid state body
- H01L2224/85375—Bonding interfaces of the semiconductor or solid state body having an external coating, e.g. protective bond-through coating
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L2924/01—Chemical elements
- H01L2924/01057—Lanthanum [La]
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- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
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- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Wire Bonding (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/282,596 US6358847B1 (en) | 1999-03-31 | 1999-03-31 | Method for enabling conventional wire bonding to copper-based bond pad features |
| US09/282,596 | 1999-03-31 | ||
| PCT/US2000/005787 WO2000059029A2 (en) | 1999-03-31 | 2000-03-06 | Method and apparatus for enabling conventional wire bonding to copper-based bond pad features |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002540631A true JP2002540631A (ja) | 2002-11-26 |
| JP2002540631A5 JP2002540631A5 (enExample) | 2011-08-25 |
Family
ID=23082214
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000608434A Pending JP2002540631A (ja) | 1999-03-31 | 2000-03-06 | 銅を用いたボンディングパッド構造に対する従来型のワイヤボンディングの適用を可能にする方法および装置 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US6358847B1 (enExample) |
| EP (1) | EP1186022A2 (enExample) |
| JP (1) | JP2002540631A (enExample) |
| KR (2) | KR100731851B1 (enExample) |
| AU (1) | AU3867700A (enExample) |
| TW (1) | TW454281B (enExample) |
| WO (1) | WO2000059029A2 (enExample) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007524996A (ja) * | 2003-04-02 | 2007-08-30 | フリースケール セミコンダクター インコーポレイテッド | 銅コンタクトを有する集積回路ダイおよび該集積回路ダイのための方法 |
| JP2020047794A (ja) * | 2018-09-19 | 2020-03-26 | 株式会社東芝 | 半導体装置の製造方法 |
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| US6413576B1 (en) * | 1998-10-05 | 2002-07-02 | Kulicke & Soffa Investments, Inc. | Semiconductor copper bond pad surface protection |
| US6191023B1 (en) * | 1999-11-18 | 2001-02-20 | Taiwan Semiconductor Manufacturing Company | Method of improving copper pad adhesion |
| US6432826B1 (en) | 1999-11-29 | 2002-08-13 | Applied Materials, Inc. | Planarized Cu cleaning for reduced defects |
| US6790757B1 (en) | 1999-12-20 | 2004-09-14 | Agere Systems Inc. | Wire bonding method for copper interconnects in semiconductor devices |
| US7351353B1 (en) * | 2000-01-07 | 2008-04-01 | Electrochemicals, Inc. | Method for roughening copper surfaces for bonding to substrates |
| US7220322B1 (en) | 2000-08-24 | 2007-05-22 | Applied Materials, Inc. | Cu CMP polishing pad cleaning |
| DE10064691A1 (de) * | 2000-12-22 | 2002-07-04 | Infineon Technologies Ag | Elektronisches Bauteil mit einem Halbleiter-Chip und Kupferleiterbahnen auf dem Chip sowie ein Verfahren zu seiner Herstellung |
| US6693020B2 (en) * | 2001-03-12 | 2004-02-17 | Motorola, Inc. | Method of preparing copper metallization die for wirebonding |
| US6783432B2 (en) | 2001-06-04 | 2004-08-31 | Applied Materials Inc. | Additives for pressure sensitive polishing compositions |
| TW583348B (en) * | 2001-06-19 | 2004-04-11 | Phoenix Prec Technology Corp | A method for electroplating Ni/Au layer substrate without using electroplating wire |
| JP3761461B2 (ja) * | 2001-12-13 | 2006-03-29 | Necエレクトロニクス株式会社 | 半導体装置の製造方法 |
| TWI221026B (en) * | 2002-12-06 | 2004-09-11 | Nat Univ Chung Cheng | Method of thermosonic wire bonding process for copper connection in a chip |
| US6881437B2 (en) * | 2003-06-16 | 2005-04-19 | Blue29 Llc | Methods and system for processing a microelectronic topography |
| US6969638B2 (en) * | 2003-06-27 | 2005-11-29 | Texas Instruments Incorporated | Low cost substrate for an integrated circuit device with bondpads free of plated gold |
| US7919864B2 (en) * | 2003-10-13 | 2011-04-05 | Stmicroelectronics S.A. | Forming of the last metallization level of an integrated circuit |
| US7105379B2 (en) * | 2004-04-28 | 2006-09-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Implementation of protection layer for bond pad protection |
| US7210988B2 (en) | 2004-08-24 | 2007-05-01 | Applied Materials, Inc. | Method and apparatus for reduced wear polishing pad conditioning |
| JP4035733B2 (ja) * | 2005-01-19 | 2008-01-23 | セイコーエプソン株式会社 | 半導体装置の製造方法及び電気的接続部の処理方法 |
| DE102005033469B4 (de) * | 2005-07-18 | 2019-05-09 | Infineon Technologies Ag | Verfahren zum Herstellen eines Halbleitermoduls |
| DE102005034485B4 (de) * | 2005-07-20 | 2013-08-29 | Infineon Technologies Ag | Verbindungselement für ein Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterleistungsbauelements |
| TW200720493A (en) | 2005-10-31 | 2007-06-01 | Applied Materials Inc | Electrochemical method for ecmp polishing pad conditioning |
| DE102006044691B4 (de) * | 2006-09-22 | 2012-06-21 | Infineon Technologies Ag | Verfahren zum Herstellen einer Anschlussleitstruktur eines Bauelements |
| SG163530A1 (en) * | 2006-12-29 | 2010-08-30 | United Test & Assembly Ct Lt | Copper wire bonding on organic solderability preservative materials |
| SG177212A1 (en) * | 2008-06-20 | 2012-01-30 | United Test & Assembly Ct Lt | Copper on organic solderability preservative (osp) interconnect and enhanced wire bonding process |
| TWI452640B (zh) * | 2009-02-09 | 2014-09-11 | 日月光半導體製造股份有限公司 | 半導體封裝構造及其封裝方法 |
| DE102009029577B3 (de) * | 2009-09-18 | 2011-04-28 | Infineon Technologies Ag | Verfahren zur Herstellung eines hochtemperaturfesten Leistungshalbleitermoduls |
| US9142533B2 (en) | 2010-05-20 | 2015-09-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Substrate interconnections having different sizes |
| KR101729203B1 (ko) * | 2011-04-25 | 2017-04-21 | 버슘 머티리얼즈 유에스, 엘엘씨 | 와이어본딩 공정을 개선시키기 위한 리드-프레임 세정 |
| US9646923B2 (en) | 2012-04-17 | 2017-05-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor devices, methods of manufacture thereof, and packaged semiconductor devices |
| US9425136B2 (en) | 2012-04-17 | 2016-08-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Conical-shaped or tier-shaped pillar connections |
| US9299674B2 (en) | 2012-04-18 | 2016-03-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bump-on-trace interconnect |
| CN104756239B (zh) * | 2012-08-08 | 2018-01-26 | 马维尔国际贸易有限公司 | 使用由载体铜箔支撑的薄铜箔制作封装体的方法 |
| US9111817B2 (en) | 2012-09-18 | 2015-08-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bump structure and method of forming same |
| US9012263B1 (en) * | 2013-10-31 | 2015-04-21 | Freescale Semiconductor, Inc. | Method for treating a bond pad of a package substrate |
| US11682641B2 (en) | 2020-08-13 | 2023-06-20 | Microchip Technology Incorporated | Integrated circuit bond pad with multi-material toothed structure |
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| JPH1041298A (ja) * | 1996-07-23 | 1998-02-13 | Toshiba Corp | 半導体装置及びその製造方法 |
| JPH113892A (ja) * | 1997-06-11 | 1999-01-06 | Ricoh Co Ltd | 半導体装置の製造方法 |
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- 1999-03-31 US US09/282,596 patent/US6358847B1/en not_active Expired - Lifetime
-
2000
- 2000-03-06 KR KR1020017012365A patent/KR100731851B1/ko not_active Expired - Fee Related
- 2000-03-06 WO PCT/US2000/005787 patent/WO2000059029A2/en not_active Ceased
- 2000-03-06 EP EP00917749A patent/EP1186022A2/en not_active Withdrawn
- 2000-03-06 JP JP2000608434A patent/JP2002540631A/ja active Pending
- 2000-03-06 AU AU38677/00A patent/AU3867700A/en not_active Abandoned
- 2000-03-06 KR KR1020077000028A patent/KR100731850B1/ko not_active Expired - Fee Related
- 2000-03-31 TW TW89106196A patent/TW454281B/zh not_active IP Right Cessation
-
2002
- 2002-01-04 US US10/038,980 patent/US6610601B2/en not_active Expired - Lifetime
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH08250635A (ja) * | 1995-03-14 | 1996-09-27 | Dainippon Printing Co Ltd | リードフレームの製造方法 |
| JPH1041298A (ja) * | 1996-07-23 | 1998-02-13 | Toshiba Corp | 半導体装置及びその製造方法 |
| JPH113892A (ja) * | 1997-06-11 | 1999-01-06 | Ricoh Co Ltd | 半導体装置の製造方法 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007524996A (ja) * | 2003-04-02 | 2007-08-30 | フリースケール セミコンダクター インコーポレイテッド | 銅コンタクトを有する集積回路ダイおよび該集積回路ダイのための方法 |
| JP2020047794A (ja) * | 2018-09-19 | 2020-03-26 | 株式会社東芝 | 半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US6358847B1 (en) | 2002-03-19 |
| KR100731850B1 (ko) | 2007-06-25 |
| KR100731851B1 (ko) | 2007-06-25 |
| US6610601B2 (en) | 2003-08-26 |
| WO2000059029A3 (en) | 2001-02-15 |
| KR20070010211A (ko) | 2007-01-22 |
| US20020058417A1 (en) | 2002-05-16 |
| KR20010108419A (ko) | 2001-12-07 |
| EP1186022A2 (en) | 2002-03-13 |
| AU3867700A (en) | 2000-10-16 |
| TW454281B (en) | 2001-09-11 |
| WO2000059029A2 (en) | 2000-10-05 |
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