JP2002540631A - 銅を用いたボンディングパッド構造に対する従来型のワイヤボンディングの適用を可能にする方法および装置 - Google Patents

銅を用いたボンディングパッド構造に対する従来型のワイヤボンディングの適用を可能にする方法および装置

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Publication number
JP2002540631A
JP2002540631A JP2000608434A JP2000608434A JP2002540631A JP 2002540631 A JP2002540631 A JP 2002540631A JP 2000608434 A JP2000608434 A JP 2000608434A JP 2000608434 A JP2000608434 A JP 2000608434A JP 2002540631 A JP2002540631 A JP 2002540631A
Authority
JP
Japan
Prior art keywords
brush
wafer
layer
passivation layer
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000608434A
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English (en)
Japanese (ja)
Other versions
JP2002540631A5 (enExample
Inventor
リー・ヒュウ
ハイムズ・ダイアン・ジェイ．
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of JP2002540631A publication Critical patent/JP2002540631A/ja
Publication of JP2002540631A5 publication Critical patent/JP2002540631A5/ja
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B1/00—Cleaning by methods involving the use of tools
    • B08B1/30—Cleaning by methods involving the use of tools by movement of cleaning members over a surface
    • B08B1/32—Cleaning by methods involving the use of tools by movement of cleaning members over a surface using rotary cleaning members
    • B08B1/34—Cleaning by methods involving the use of tools by movement of cleaning members over a surface using rotary cleaning members rotating about an axis parallel to the surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H10W72/01571—Cleaning, e.g. oxide removal or de-smearing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H10W72/01971—Cleaning, e.g. oxide removal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H10W72/07118—Means for cleaning, e.g. brushes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H10W72/07141—Means for applying energy, e.g. ovens or lasers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07511—Treating the bonding area before connecting, e.g. by applying flux or cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07521—Aligning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H10W72/07533—Ultrasonic bonding, e.g. thermosonic bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Wire Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2000608434A 1999-03-31 2000-03-06 銅を用いたボンディングパッド構造に対する従来型のワイヤボンディングの適用を可能にする方法および装置 Pending JP2002540631A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/282,596 1999-03-31
US09/282,596 US6358847B1 (en) 1999-03-31 1999-03-31 Method for enabling conventional wire bonding to copper-based bond pad features
PCT/US2000/005787 WO2000059029A2 (en) 1999-03-31 2000-03-06 Method and apparatus for enabling conventional wire bonding to copper-based bond pad features

Publications (2)

Publication Number Publication Date
JP2002540631A true JP2002540631A (ja) 2002-11-26
JP2002540631A5 JP2002540631A5 (enExample) 2011-08-25

Family

ID=23082214

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000608434A Pending JP2002540631A (ja) 1999-03-31 2000-03-06 銅を用いたボンディングパッド構造に対する従来型のワイヤボンディングの適用を可能にする方法および装置

Country Status (7)

Country Link
US (2) US6358847B1 (enExample)
EP (1) EP1186022A2 (enExample)
JP (1) JP2002540631A (enExample)
KR (2) KR100731850B1 (enExample)
AU (1) AU3867700A (enExample)
TW (1) TW454281B (enExample)
WO (1) WO2000059029A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007524996A (ja) * 2003-04-02 2007-08-30 フリースケール セミコンダクター インコーポレイテッド 銅コンタクトを有する集積回路ダイおよび該集積回路ダイのための方法
JP2020047794A (ja) * 2018-09-19 2020-03-26 株式会社東芝 半導体装置の製造方法

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002527886A (ja) * 1998-10-05 2002-08-27 キューリック、アンド、ソファー、インベストメンツ、インコーポレーテッド 半導体の銅ボンドパッドの表面保護
US6191023B1 (en) * 1999-11-18 2001-02-20 Taiwan Semiconductor Manufacturing Company Method of improving copper pad adhesion
US6432826B1 (en) 1999-11-29 2002-08-13 Applied Materials, Inc. Planarized Cu cleaning for reduced defects
US6790757B1 (en) * 1999-12-20 2004-09-14 Agere Systems Inc. Wire bonding method for copper interconnects in semiconductor devices
US7351353B1 (en) * 2000-01-07 2008-04-01 Electrochemicals, Inc. Method for roughening copper surfaces for bonding to substrates
US7220322B1 (en) 2000-08-24 2007-05-22 Applied Materials, Inc. Cu CMP polishing pad cleaning
DE10064691A1 (de) * 2000-12-22 2002-07-04 Infineon Technologies Ag Elektronisches Bauteil mit einem Halbleiter-Chip und Kupferleiterbahnen auf dem Chip sowie ein Verfahren zu seiner Herstellung
US6693020B2 (en) * 2001-03-12 2004-02-17 Motorola, Inc. Method of preparing copper metallization die for wirebonding
US6783432B2 (en) 2001-06-04 2004-08-31 Applied Materials Inc. Additives for pressure sensitive polishing compositions
TW583348B (en) * 2001-06-19 2004-04-11 Phoenix Prec Technology Corp A method for electroplating Ni/Au layer substrate without using electroplating wire
JP3761461B2 (ja) * 2001-12-13 2006-03-29 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
TWI221026B (en) * 2002-12-06 2004-09-11 Nat Univ Chung Cheng Method of thermosonic wire bonding process for copper connection in a chip
US6881437B2 (en) * 2003-06-16 2005-04-19 Blue29 Llc Methods and system for processing a microelectronic topography
US6969638B2 (en) * 2003-06-27 2005-11-29 Texas Instruments Incorporated Low cost substrate for an integrated circuit device with bondpads free of plated gold
US7919864B2 (en) * 2003-10-13 2011-04-05 Stmicroelectronics S.A. Forming of the last metallization level of an integrated circuit
US7105379B2 (en) * 2004-04-28 2006-09-12 Taiwan Semiconductor Manufacturing Co., Ltd. Implementation of protection layer for bond pad protection
US7210988B2 (en) 2004-08-24 2007-05-01 Applied Materials, Inc. Method and apparatus for reduced wear polishing pad conditioning
JP4035733B2 (ja) * 2005-01-19 2008-01-23 セイコーエプソン株式会社 半導体装置の製造方法及び電気的接続部の処理方法
DE102005033469B4 (de) * 2005-07-18 2019-05-09 Infineon Technologies Ag Verfahren zum Herstellen eines Halbleitermoduls
DE102005034485B4 (de) * 2005-07-20 2013-08-29 Infineon Technologies Ag Verbindungselement für ein Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterleistungsbauelements
WO2007094869A2 (en) 2005-10-31 2007-08-23 Applied Materials, Inc. Electrochemical method for ecmp polishing pad conditioning
DE102006044691B4 (de) 2006-09-22 2012-06-21 Infineon Technologies Ag Verfahren zum Herstellen einer Anschlussleitstruktur eines Bauelements
SG144124A1 (en) * 2006-12-29 2008-07-29 United Test & Assembly Ct Ltd Copper wire bonding on organic solderability preservative materials
SG158048A1 (en) * 2008-06-20 2010-01-29 United Test & Assembly Ct Ltd Copper on organic solderability preservative (osp) interconnect and enhanced wire bonding process
TWI452640B (zh) * 2009-02-09 2014-09-11 日月光半導體製造股份有限公司 半導體封裝構造及其封裝方法
DE102009029577B3 (de) * 2009-09-18 2011-04-28 Infineon Technologies Ag Verfahren zur Herstellung eines hochtemperaturfesten Leistungshalbleitermoduls
US9142533B2 (en) 2010-05-20 2015-09-22 Taiwan Semiconductor Manufacturing Company, Ltd. Substrate interconnections having different sizes
CN103620753B (zh) * 2011-04-25 2017-05-24 气体产品与化学公司 清洁引线框以改善导线接合工艺
US9646923B2 (en) 2012-04-17 2017-05-09 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices, methods of manufacture thereof, and packaged semiconductor devices
US9425136B2 (en) 2012-04-17 2016-08-23 Taiwan Semiconductor Manufacturing Company, Ltd. Conical-shaped or tier-shaped pillar connections
US9299674B2 (en) 2012-04-18 2016-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. Bump-on-trace interconnect
CN104756239B (zh) * 2012-08-08 2018-01-26 马维尔国际贸易有限公司 使用由载体铜箔支撑的薄铜箔制作封装体的方法
US9111817B2 (en) 2012-09-18 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Bump structure and method of forming same
US9012263B1 (en) * 2013-10-31 2015-04-21 Freescale Semiconductor, Inc. Method for treating a bond pad of a package substrate
US11682641B2 (en) 2020-08-13 2023-06-20 Microchip Technology Incorporated Integrated circuit bond pad with multi-material toothed structure

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08250635A (ja) * 1995-03-14 1996-09-27 Dainippon Printing Co Ltd リードフレームの製造方法
JPH1041298A (ja) * 1996-07-23 1998-02-13 Toshiba Corp 半導体装置及びその製造方法
JPH113892A (ja) * 1997-06-11 1999-01-06 Ricoh Co Ltd 半導体装置の製造方法

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS531654A (en) 1976-06-28 1978-01-09 Furukawa Electric Co Ltd Method of preventing oxidation of copper member
US4370173A (en) 1981-05-15 1983-01-25 Amchem Products, Inc. Composition and method for acid cleaning of aluminum surfaces
US4871422A (en) 1987-01-27 1989-10-03 Olin Corporation Etching solutions containing ammonium fluoride and anionic sulfate esters of alkylphenol polyglycidol ethers and method of etching
JPH02130922A (ja) 1988-11-11 1990-05-18 Toshiba Corp 半導体基板エッチング装置
DE3939661A1 (de) 1989-11-30 1991-06-13 Wacker Chemitronic Verfahren zur steuerung des einbaues von kupfer in siliciumscheiben beim chemomechanischen polieren
WO1993010277A1 (en) 1991-11-20 1993-05-27 Electrochemicals, Inc. Improved method for bonding copper to a polymeric material
WO1994027314A1 (en) 1993-05-13 1994-11-24 Interuniversitair Microelektronica Centrum Method for semiconductor processing using mixtures of hf and carboxylic acid
JPH07147300A (ja) 1993-11-24 1995-06-06 Hitachi Ltd インナーリードボンディング装置
FR2722511B1 (fr) 1994-07-15 1999-04-02 Ontrak Systems Inc Procede pour enlever les metaux dans un dispositif de recurage
DE4444388A1 (de) 1994-11-28 1996-05-30 Atotech Deutschland Gmbh Verfahren zum Bonden von Drähten auf oxidationsempfindlichen, lötbaren Metallsubstraten
JPH08195369A (ja) 1995-01-13 1996-07-30 Daikin Ind Ltd 基板の洗浄方法
US5662769A (en) 1995-02-21 1997-09-02 Advanced Micro Devices, Inc. Chemical solutions for removing metal-compound contaminants from wafers after CMP and the method of wafer cleaning
US5714203A (en) 1995-08-23 1998-02-03 Ictop Entwicklungs Gmbh Procedure for the drying of silicon
DE69631258T2 (de) 1995-10-13 2004-11-18 Lam Research Corp., Fremont Verfahren zum Entfernen von Verunreinigungen durch Bürsten
KR100269013B1 (ko) 1995-11-15 2000-11-01 이노우에 노리유끼 웨이퍼 처리액 및 그 제조방법
US5700383A (en) 1995-12-21 1997-12-23 Intel Corporation Slurries and methods for chemical mechanical polish of aluminum and titanium aluminide
US5810938A (en) 1996-05-24 1998-09-22 Henkel Corporation Metal brightening composition and process that do not damage glass
TW416987B (en) 1996-06-05 2001-01-01 Wako Pure Chem Ind Ltd A composition for cleaning the semiconductor substrate surface
US5709755A (en) 1996-08-09 1998-01-20 Taiwan Semiconductor Manufacturing Company, Ltd. Method for CMP cleaning improvement
US5794299A (en) 1996-08-29 1998-08-18 Ontrak Systems, Inc. Containment apparatus
US6296714B1 (en) 1997-01-16 2001-10-02 Mitsubishi Materials Silicon Corporation Washing solution of semiconductor substrate and washing method using the same
JPH10321572A (ja) 1997-05-15 1998-12-04 Toshiba Corp 半導体ウェーハの両面洗浄装置及び半導体ウェーハのポリッシング方法
US5935871A (en) * 1997-08-22 1999-08-10 Motorola, Inc. Process for forming a semiconductor device
US6096652A (en) * 1997-11-03 2000-08-01 Motorola, Inc. Method of chemical mechanical planarization using copper coordinating ligands
US6051879A (en) * 1997-12-16 2000-04-18 Micron Technology, Inc. Electrical interconnection for attachment to a substrate

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08250635A (ja) * 1995-03-14 1996-09-27 Dainippon Printing Co Ltd リードフレームの製造方法
JPH1041298A (ja) * 1996-07-23 1998-02-13 Toshiba Corp 半導体装置及びその製造方法
JPH113892A (ja) * 1997-06-11 1999-01-06 Ricoh Co Ltd 半導体装置の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007524996A (ja) * 2003-04-02 2007-08-30 フリースケール セミコンダクター インコーポレイテッド 銅コンタクトを有する集積回路ダイおよび該集積回路ダイのための方法
JP2020047794A (ja) * 2018-09-19 2020-03-26 株式会社東芝 半導体装置の製造方法

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US6610601B2 (en) 2003-08-26
US20020058417A1 (en) 2002-05-16
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KR20070010211A (ko) 2007-01-22
KR100731850B1 (ko) 2007-06-25
KR100731851B1 (ko) 2007-06-25
KR20010108419A (ko) 2001-12-07
WO2000059029A2 (en) 2000-10-05
AU3867700A (en) 2000-10-16
TW454281B (en) 2001-09-11
US6358847B1 (en) 2002-03-19

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